• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2010.06a
• /
• pp.34-34
• /
• 2010

We report on the influence of heat treatments on the electrical properties of ZnO films grown by molecular-beam epitaxy. We note that the electrical resistance of the ZnO films is significantly changed by the heat treatments: the electrical resistance increases with the increase of ambient temperature, but above a critical temperature the resistance decreases with the increase of temperature, irrespective of ambient gases. On the other hand, it is found that the large amount of photocurrent is generated in the ZnO films, exposed to white sources: the photocurrent decreases with the increase of the obtained resistance, and the current increases with the decrease of the resistance. Also, it is shown that the X-ray diffraction linewidth of the ZnO films is significantly decreased by the heat treatments. These indicate that the increase/decrease of the electrical resistance is ascribed to the annihilation/formation of the residual donor-type defects in the ZnO films by the heat treatments. It is suggested that the increase of the electrical resistance is due to the annihilation of Zni-complex defects, while the decrease of the electrical resistance is due to the formation of VO-complex defects.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.14 no.12
• /
• pp.1008-1015
• /
• 2001

Thin films of vanadium oxide(VO$\_$x/) have been deposited by r.f. magnetron sputtering from V$_2$O$\_$5/ target in gas mixture of argon and oxygen. The oxygen/(oxygen+argon) partial pressure ratio is changed from 0% to 8%. Crystal structure, chemical composition, bonding, optical and electrical properties of films sputter-deposited under different oxygen gas pressures are characterized through XPS, AES, RBS, FTIR, optical absorption and electrical conductivity measurements. V$_2$O$\_$5/ and lower oxides co-exist in sputter-deposited films and as the oxygen partial pressure is increased the films become more stoichiometric V$_2$O$\_$5/. The increase of O/V ratio with increasing oxygen gas pressure is attributed to the partial filling of oxygen vacancies through diffusion. It is observed that the oxygen atoms located on the V-O plane of V$_2$O$\_$5/ layer participate more readily in the oxidation process. With increasing oxygen gas pressure indirect and direct optical band gaps are increased, but thermal activation energies are decreased.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.11a
• /
• pp.435-438
• /
• 2003

The effects of oxygen partial pressure and vacuum annealing on the electrical properties of sputtered vanadium oxide($VO_x$) thin films were investigated. The thin films were prepared by r.f. magnetron sputtering from $V_2O_5$ target in a gas mixture of argon and oxygen. The oxygen/(oxygen+argon) partial pressure ratio of 0% and 8% is adopted. Electrical properties of films sputter-deposited under different oxygen gas pressures and in situ annealed in vacuum at $400^{\circ}C$ for 1h and 4h are characterized through electrical conductivity measurements. I-V characteristics were distinguished between linear and nonlinear region. In the low field region the conduction is due to Schottky emission, while at high fields it changes to Fowler-Nordheim tunneling type conduction. The conductivity measurements have shown an Arrhenius dependence of the conductivity on the temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.11a
• /
• pp.160-162
• /
• 2003

ZnO epilayer were synthesized by the pulesd laser deposition(PLD) process on $Al_2O_3$ substrate after irradiating the surface of the ZnO sintered pellet by the ArF(193nm) excimer laser. The substrate temperatures was $400^{\circ}C$. The crystalline structure of epilayer was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of ZnO epilayer measured with Hall effect by van der Pauw method are $8.27{\times}10^{16}\;cm^{-3}\;and\;299\;cm^2V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the ZnO obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;3.3973\;eV\;-\;(2.69{\times}10^{-4}\;eV/K)T^2/(T\;+\;463K)$. After the as-grown ZnO epilayer was annealed in Zn atmospheres, oxygen and vaccum the origin of point defects of ZnO atmospheres has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{Zn}$, Vo, $Zn_{int}$, and $O_{int}$ obtained by PL measurements were classified as a donors or accepters type.

• Journal of Cadastre & Land InformatiX
• /
• v.50 no.2
• /
• pp.169-187
• /
• 2020

In Korea, Switzerland has been known as a country that integrates the Cadastral System (hereafter as CS.) and the registration system(hereafter as RS.) according to a research report by the Ministry of Home Affairs since 1975. However, I found that Switzerland's CS. and RS. were separately managed by the Dept. of Defense, Civil Protection & Sports(hereafter as DDPS.) and the Dept. of Justice & Police(hereafter as DJP.). Therefore, I have a question about where is the institution in charge of the CS. and RS. in Switzerland, what are the relevant laws and regulations, and what are the related public records, and the background and purpose of this study is to resolve this. Research Results First, cadastral affairs are handled by the Cadastral Surveying Division at the Federal Office for Topography (Swisstopo) under the DDPS, and the registered affairs are handled by the Private Law Division at the Federal Office for Justice under the DJP. Second, Cadastral-related laws include 'VAV' and 'TVAV' newly enacted in 1993, and Registration-related laws include 'Civil Act(ZGB)' and 'Order on Land Registration(GbVO)' etc. which have been in effect since 1912. Third, the cadastral record includes the Cadastral Books, Cadastral Maps & Numerical Cadastral Books etc, and the register includes the Hauptbuch, Tagebuch, Pläne, Liegenschaftsbeschreibung etc. It is hoped that the results of this study will provide an accurate understanding of the fact that Switzerland's CS. is managed separately by the DDPS, and the RS. is managed by the DJP.

• Animal Bioscience
• /
• v.35 no.5
• /
• pp.690-697
• /
• 2022

Objective: This study aimed to evaluate the effect of the ad libitum and restricted feeding regimen on fasting heat production (FHP) and body composition. Methods: Twelve Hubbard broilers breeders were selected with the same body weight and submitted in two feeding regimes: Restricted (T1) with feed intake of 150 g/bird/d and ad libitum (T2). The birds were randomly distributed on the treatments in two runs with three replications per treatment (per run). The birds were adapted to the feed regimens for ten days. After that, they were allocated in the open-circuit chambers and kept for three days for adaptation. On the last day, oxygen consumption (VO₂) and carbon dioxide production (VCO₂) were measured by 30 h under fasting. The respiratory quotient (RQ) was calculated as the VCO₂/VO₂ ratio, and the heat production (HP) was obtained using the Brower equation (1985). The FHP was estimated throughout the plateau of HP 12 hours after the feed deprivation. The body composition was analyzed by dual-energy X-ray absorptiometry scanning at the end of each period. Data were analyzed for one-way analysis of variance using the Minitab software. Results: The daily feed intake was 30 g higher to T2 (p<0.01) than the T1. Also, the birds of the T2 had significatively (p<0.05) more oxygen consumption (+3.1 L/kg^0.75/d) and CO₂ production (+2.2 L/kg^0.75/d). That resulted in a higher FHP 359±14 kJ/kg^0.75/d for T2 than T1 296±17.23 kJ/kg^0.75/d. In contrast, the RQ was not different between treatments, with an average of 0.77 for the fasting condition. In addition, protein and fat composition were not affected by the treatment, while a tendency (p<0.1) was shown to higher bone mineral content on the T1. Conclusion: The birds under ad libitum feeding had a higher maintenance energy requirement but their body composition was not affected compared to restricted feeding.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.05b
• /
• pp.70-73
• /
• 2002

Thin films of vanadium oxide($VO_{x}$) have been deposited by r.f. magnetron sputtering from $V_{2}O_{5}$ target in gas mixture of argon and oxygen. The oxygen/(oxygen+argon) partial pressure ratio of 0% and 8% is adopted. Crystal structure, chemical composition, molecular structure and optical properties of films sputter-deposited under different oxygen gas pressures and in-situ annealed in vacuum at $400^{\circ}C$ for 1h and 4h are characterized through XRD. RBS, FTlR and optical absorption measurements. The films as-deposited are amorphous and those annealed for time longer than 4h are polycrystalline. $V_{2}O_{5}$ and lower oxides co-exist in sputter-deposited films and as the oxygen partial pressure is increased the films become more stoichiometric $V_{2}O_{5}$. When annealed at $400^{\circ}C$, the as-deposited films are reduced to a lower oxide. It is observed that the oxygen atoms located on the V-O plane of $V_{2}O_{5}$ layer participate more readily in the oxidation and reduction process. The optical transmission of the films annealed in vacuum decreases considerably than the as-deposited films and the optical absorption of all the films increases rapidly between 400 and 550nm.

• Journal of Magnetics
• /
• v.15 no.3
• /
• pp.112-115
• /
• 2010

We have investigated a surfactant-assisted sonochemical approach to produce monodisperse $Fe_3O_4$ nanoparticles (NPs). The non-ionic surfactant Igepal CO-520 (Poly(oxyethylene)(5) nonylphenyl ether) has been used for the preparation of NPs and the effects on the NP size, size distribution, and magnetic properties have been studied. The $Fe_3O_4$ NPs were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), and vibrating sample magnetometry (VSM). The results reveal that the NPs prepared by a Igepal CO-520-assisted sonochemical method exhibit a narrow range of size distributions and a high monodispersity compared to the NPs from the conventional sonochemical method. The analysis of NPs prepared in the presence of the surfactant suggested that it could be used not only as a protector to prevent the oxidation of Fe (II), but also as a controller to vary the size of the NPs.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.07b
• /
• pp.898-901
• /
• 2004

[ $ZnCr_2O_4$ ]를 모물질로 하고 MgO, $TiO_2$를 몰비로 2:1, 4:1, 6:1, 및 8:1이 되게 정량적으로 조합한 후, 조사하였다. $ZnCr_2O_4$-MgO와 $ZnCr_2O_4-TiO_2$를 X-선 분석한 결과 Spinel 결정구조를 형성하였으며, 또한 SEM과 EDX 분석결과 각각 $Li_2CrO_4$와 $Li_3VO_4$의 형성으로 인하여 저항 특성이 나타나는 것을 알 수 있었다. $ZnCr_2O_4-MgO$, $ZnCr_2O_4-TiO_2$에서 MgO의 양이 증가할수록 저항값은 약간 감소하는 반면, $TiO_2$의 양이 증가할수록 저항값이 급격히 증가하는 특성을 나타내었고, 감습 특성에서도 M??보다 TiO2가 더 높게 나타내었다. 습에 따른 복원 특성의 경우 $700^{\circ}C$에서 소결한 ($ZnCr_2O_4:MgO=4:1$)과 ($ZnCr_2O_4:TiO_2=6:1$) 조성의 센서가 가장 양호하였다.

• Proceedings of the Korean Society of Machine Tool Engineers Conference
• /
• 2004.10a
• /
• pp.233-244
• /
• 2004

ZnO epilayer were synthesized by the pulesd laser deposition(PLD) process on $Al_2O_3$ substrate after irradiating the surface of the ZnO sintered pellet by the ArF(193nm) excimer laser. The epilayers of ZnO were achieved on sapphire ($Al_2O_3$)substrate at a temperature of $400^{\circ}C$. The crystalline structure of epilayer was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of ZnO epilayer measured with Hall effect by van der Pauw method are $8.27{\times}10^{16}\;cm^{-3}$ and $299\;{\textrm}cm^2/V.s$ at 293K. respectively. The temperature dependence of the energy band gap of the ZnO obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;3.3973\;eV\;-\;(2.69{\times}10^{-4}\;eV/K)T^2/(T+463K)$. After the as-grown ZnO epilayer was annealed in Zn atmospheres, oxygen and vaccum the origin of point defects of ZnO atmospheres has been investigated by the photoluminescence(PL) at 10K. The native defects of $V_{zn},\;Vo,\;Zn_{int},\;and\;O_{int}$ obtained by PL measurements were classified as a donors or acceptors type. In addition, we concluded that the heat-treatment in the oxygen atmosphere converted ZnO thin films to an optical p-type. Also, we confirmed that vacuum in $ZnO/Al_2O_3$ did not form the native defects because vacuum in ZnO thin films existed in the form of stable bonds.