• Imaging Science in Dentistry
• /
• v.40 no.4
• /
• pp.155-158
• /
• 2010

Digital radiographic systems allow the implementation of a fully digital picture archiving and communication system (PACS), and provide the greater dynamic range of digital detectors with possible reduction of X-ray exposure to the patient. This article reviewed the basic physical principles of digital radiographic imaging system in dental clinics generally. Digital radiography can be divided into computed radiography (CR) and direct radiography (DR). CR systems acquire digital images using phosphor storage plates (PSP) with a separate image readout process. On the other hand, DR systems convert X-rays into electrical charges by means of a direct readout process. DR systems can be further divided into direct and indirect conversion systems depending on the type of X-ray conversion. While a direct conversion requires a photoconductor that converts X-ray photons into electrical charges directly, in an indirect conversion, lightsensitive sensors such as CCD or a flat-panel detector convert visible light, proportional to the incident X-ray energy by a scintillator, into electrical charges. Indirect conversion sensors using CCD or CMOS without lens-coupling are used in intraoral radiography. CR system using PSP is mainly used in extraoral radiographic system and a linear array CCD or CR sensors, in panoramic system. Currently, the digital radiographic system is an important subject in the dental field. Most studies reported that no significant difference in diagnostic performance was found between the digital and conventional systems. To accept advances in technology and utilize benefits provided by the systems, the continuous feedback between doctors and manufacturers is essential.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.12 no.8
• /
• pp.1356-1362
• /
• 2008

In this paper. we propose a novel auto white balance algorithm which is one of the representative functions on cameras. White balance is the process of removing unrealistic color casts, which will make the captured white objects appear white. For white balance, we employ $CIEL^*a^*b^*$ color space which is the most complete color model available and is conventionally used to describe all the colors visible to the human eye and estimate the color difference on white objects with distribution of the image which is called the reference white estimation. For accuracy, we form groups or sets of pixels that are altered by the light sources and other elements. Moreover, Standard group is decided by judgment of specific-case images with the information of groups. Then, the reference white estimation is performed by the color sampling which is to choose all the accumulated pixels contained within the standard group. The color gain for image compensation by considering the color saturation is also computed. the proposed algorithm provides a significant performance.

• The Journal of the Korea institute of electronic communication sciences
• /
• v.15 no.4
• /
• pp.665-670
• /
• 2020

Buffer layer in CIGS thin-film solar cells improves energy conversion efficiency through band alignment between the absorption layer and the window layer. ZnS is a non-toxic II-VI compound semiconductor with direct-transition band gaps and n-conductivity as well as with excellent lattice matching for CIGS absorbent layers. In this study, the structural and optical properties of ZnS thin films, deposited by RF magnetron sputtering method and subsequently performed by the rapid thermal annealing treatment, were investigated for the buffer layer. The zincblende cubic structures along (111), (220), and (311) were shown in all specimens. The rapid thermal annealed specimens at the relatively low temperatures were polycrystalline structure with the wurtzite hexagonal structures along (002). Rapid thermal annealing at high temperatures changed the polycrystalline structure to the single crystal of the zincblende cubic structures. Through the chemical analysis, the zincblende cubic structure was obtained in the specimen with the ratio of Zn/S near stoichiometry. ZnS thin film showed the shifted absorption edge towards the lower wavelength as annealing temperature increased, and the mean optical transmittance in the visible light range increased to 80.40% under 500℃ conditions.

• The Journal of the Korea institute of electronic communication sciences
• /
• v.14 no.3
• /
• pp.497-504
• /
• 2019

We fabricated $HfO_2$ thin films using RF magnetron sputtering method, and investigated structural and optical properties of $HfO_2$ thin films with RTA temperatures in $N_2$ ambient. $HfO_2$ thin films exhibited polycrystalline structure regardless of annealing process, FWHM of M (-111) showed reduction trend. The surface roughness showed the smallest of 3.454 nm at a annealing temperature of $600^{\circ}C$ in result of AFM. All $HfO_2$ thin films showed the transmittance of about 80% in visible light range. By fitting the refractive index from the transmittance and reflectance to the Sellmeir dispersion relation, we can predict the refractive index of the $HfO_2$ thin film according to the wavelength. The $HfO_2$ thin film annealed at $600^{\circ}C$ exhibited a high refractive index of 2.0223 (${\lambda}=632nm$) and an excellent packing factor of 0.963.

• The Journal of the Korea institute of electronic communication sciences
• /
• v.16 no.3
• /
• pp.443-450
• /
• 2021

After selecting a PES substrate with excellent thermal stability and optical properties among plastic substrates, a SiO₂ thin film was deposited as a buffer layer to a thickness of 20nm by plasma-enhanced chemical vapor deposition to compensate for the high moisture absorption. Then, the ITZO thin film was deposited by a RF magnetron sputtering method to investigate electrical and optical properties according to RF power. The ITZO thin film deposited at 50W showed the best electrical properties such as a resistivity of 8.02×10^-4 Ω-cm and a sheet resistance of 50.13Ω/sq.. The average transmittance of the ITZO thin film in the visible light region(400-800nm) was relatively high as 80% or more when the RF power was 40 and 50W. Figure of Merits (Φ_TC and FOM) showed the largest values of 23.90×10^-4 Ω^-1 and 5883 Ω^-1cm^-1, respectively, in the ITZO thin film deposited at 50W.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.21 no.7
• /
• pp.1285-1290
• /
• 2017

We prepared ITZO thin films with various thicknesses on glass substrates using RF magnetron sputtering and investigated electrical, optical and structural properties of the thin film. Sheet resistance of ITZO thin film showed a decreasing trend on the increase of film thickness, but its resistivity exhibited a substantially constant value of $5.06{\pm}1.23{\times}10^{-4}{\Omega}-cm$. Transmittance of ITZO thin film moved to the long-wavelength with the increase of film thickness. Figure of merit in a visible light and an absorption area of P3HT:PCBM organic active layer of the 360nm-thick IZTO thin film was $8.21{\times}10^{-3}{\Omega}^{-1}$ and $9.29{\times}10^{-3}{\Omega}^{-1}$, respectively. Through XRD and AFM measurements, it was confirmed that all the ITZO thin films have amorphous structure and the surface roughness of films are very smooth in the range of 0.561 to 0.263 nm. In this study, it was found that amorphous ITZO thin film is a very promising material for organic solar cell.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.20 no.5
• /
• pp.986-991
• /
• 2016

In this study, we prepared ITO thin films on $Nb_2O_5/SiO_2$ double buffer layer using DC magnetron sputtering method and investigated electrical and optical properties with various substrate temperatures (room temperature ~ $400^{\circ}C$). The resistivity showed a decreasing tendency, because crystallinity has been improved due to the enlarged grain size with increasing substrate temperature. ITO thin film deposited at $400^{\circ}C$ showed the most excellent value of resistivity and sheet resistance as $3.03{\times}10^{-4}{\Omega}{\cdot}cm$, $86.6{\Omega}/sq.$, respectively. In results of optical properties, average transmittance was increased but chromaticity ($b^*$) was decreased in visible light region (400~800nm) with increasing substrate temperature. Average transmittance and chromaticity ($b^*$) of ITO thin film deposited at $400^{\circ}C$ exhibited significantly improved results as 85.8% and 2.13 compared to 82.8% and 4.56 of the ITO thin film without buffer layer. Finally, we found that ITO thin film introduced $Nb_2O_5/SiO_2$ double buffer layer has a remarkably improved optical property such as transmittance and chromaticity due to the index matching effect.