• Title/Summary/Keyword: Via-hole

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A Design of Dual-band Stacked Helix Monopole Antenna with Parasitic Patch (기생 패치를 이용한 이중 대역 적층형 헬릭스 모노폴 안테나 설계)

  • Jung, Jin-Woo;Kim, Kyoung-Keun;Lee, Hyeon-Jin;Lim, Yeong-Seog
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.44 no.1
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    • pp.155-161
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    • 2007
  • This paper presents the design simulation, implementation, and measurement of a miniaturized PCS / Satellite DMB dual-band stacked mompole antenna with a parasitic patch for mobile communication terminals. A stacked helix is realized by using a via hole with height of 0.4 mm and a diameter of 0.35 mm to connect upper- and lower-layer helix sections for a reduction of the dimensions of the antenna. In addition the stacked helix chip antenna is interleaved with a parasitic patch to achieve two different radiation modes. The ratio of the first frequency and the second frequency vary with the geometrical parameter of the parasitic patch. The fabricated antenna uses FR-4 substrate with a relative permittivity of 4.2. Its dimensions are $15.5{\times}7.6{\times}0.4 mm^3$. The measured impedance bandwidths (VSWR<2) are 240 and 250 MHz at the operating frequencies, respectively.

Study on Ohmic resistance of Zn-doping InP using RTA method (RTA 방법에 의해 Zn 도핑된 InP의 오믹저항 특성연구)

  • Kim, H.J.;Kim, I.S.;Kim, T.U.;Kim, S.T.;Kim, S.H;Ki, H.C.;Lee, K.M.;Yang, M.H.;Ko, H.J.;Kim, H.J.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.237-238
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    • 2008
  • Electrical properties of Pd/Zn/Pd/Au contacts to p-InP were investigated as function of the V/III ratio of p-InP. P-type InP was made by the Zn diffusion into InP and activation process with rapid thermal annealing (RTA) measurement. After activation, the hole concentration was two orders of magnitude higher than that of the sample having only diffusion process. According to transmission line method (TLM) results, the specific contact resistance of p-InP was lower as used InP having the lower V/III ratio. The experimental results represent that the diffusion of Zn in undoped InP deeply related to the equilibrium between interstitials and substitutional Zn is established via indium interstitials.

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Embedded Ferrite Film Inductor in PCB Substrate (PCB기판에 임베디드 된 페라이트 필름 인덕터)

  • Bae, Seok;Mano, Yasuiko
    • Journal of the Korean Magnetics Society
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    • v.15 no.1
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    • pp.30-36
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    • 2005
  • Recently, It has been reported that the spin sprayed ferite film shows better magnetic properties at high frequeny that the ferrite by co-firing over $800^{\circ}C$ . Besides, there is no limitation to select the substrate materials because it can be processed with relatively low temperature below $100^{\circ}C$. Therefore, we fabricated film inductor as a passive device for DC-DC converter by a use of spin sprayed embedded form was completed by via hole process of pad opening. Saturation magnetization of 0.61 T and real part of permeability of 110 were obtained in Ni-Zn ferrite. In addition, inductance of 1.52 ${\mu}H$, quality factor of 24.3 at 5 MHz were measured with spiral 16 turn inductor. The rated current of inductor was 863 mA.

Characterization of Fe-ACF/$TiO_2$ composite Photocatalysts Effect Via Degradation of MB Solution (Fe-ACF/$TiO_2$ 복합체의 특성과 MB용액의 분해에서 포토-펜톤 효과)

  • Zhang, Kan;Meng, Ze-Da;Ko, Weon-Bae;Oh, Won-Chun
    • Elastomers and Composites
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    • v.44 no.3
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    • pp.290-298
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    • 2009
  • In this paper, the Fe-activated carbon fiber (ACF)/$TiO_2$ composite catalysts were prepared by a sol-gel method. The synthesized photocatalysts were used for the photo degradation of Methylene blue solution under UV light. From Brunauer-Emmett-Teller measurements (BET) data, it was shown the blocking of the micropores on the surface of ACF by treatment of Fe and Ti compound. As shown in SEM images, the ferric compounds and titanium dioxides were fixed onto the ACF surfaces. The result of X-ray powder diffraction showed that the crystal phase contained a mixing anatase and rutile structure and the 'FeO+$TiO_2$' from the composites. The EDX spectra for the elemental analysis showed the presence of C, O, and Ti with Fe peaks. Degradation activity of MB could be attributed to +OH radicals derived from electron/hole pair's reactions due to photolysis of $TiO_2$ and photo-Fenton effect of Fe.

THE PROCESSING OF CLUMPY MOLECULAR GAS AND STAR FORMATION IN THE GALACTIC CENTER

  • LIU, HAUYU BAOBAB;MINH, YOUNG CHOL;MILLS, ELISABETH
    • Publications of The Korean Astronomical Society
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    • v.30 no.2
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    • pp.133-137
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    • 2015
  • The Galactic center uniquely provides opportunities to resolve how star clusters form in neutral gas overdensities engulfed in a large-scale accretion flow. We have performed sensitive Green Bank 100m Telescope (GBT), Karl G. Jansky Very Large Array (JVLA), and Submillimeter Array (SMA) mapping observations of molecular gas and thermal dust emission surrounding the Galaxy's supermassive black hole (SMBH) Sgr $A^{\ast}$. We resolved several molecular gas streams orbiting the center on ${\gtrsim}10$ pc scales. Some of these gas streams appear connected to the well-known 2-4 pc scale molecular circumnuclear disk (CND). The CND may be the tidally trapped inner part of the large-scale accretion flow, which incorporates inflow via exterior gas filaments/arms, and ultimately feeds gas toward Sgr $A^{\ast}$. Our high resolution GBT+JVLA $NH_3$ images and SMA+JCMT 0.86 mm dust continuum image consistently reveal abundant dense molecular clumps in this region. These gas clumps are characterized by ${\gtrsim}100$ times higher virial masses than the derived molecular gas masses based on 0.86 mm dust continuum emission. In addition, Class I $CH_3OH$ masers and some $H_2O$ masers are observed to be well associated with the dense clumps. We propose that the resolved gas clumps may be pressurized gas reservoirs for feeding the formation of 1-10 solar-mass stars. These sources may be the most promising candidates for ALMA to probe the process of high-mass star-formation in the Galactic center.

Design and Implementation of an Internal Mobile Phone Antenna for TDMB System (휴대 단말기용 내장형 TDMB 안테나의 설계 및 구현)

  • Lee, Jeong-Ho;Song, Jae-Kwan;Yook, Jong-Gwan
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.21 no.3
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    • pp.315-320
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    • 2010
  • In this paper, an internal TDMB(Terrestrial Digital Multimedia Broadcasting) antenna for mobile phone is proposed. The overall dimension of designed antenna with substrate is 30 mm$\times$5 mm$\times$0.6 mm. The proposed antenna consists of a meander type radiator which is connected front- and back-plane of Kapton substrate by via hole and parasitic element for tuning the resonant frequency. And to compensate the electric length of desired frequency, passive inductor is used for matching element. Measured gain of the implemented antenna -17.6 dBi at 174 MHz, -13.01 dBi at 195 MHz, and -14.9 dBi at 216 MHz.

Implementation of Diplexer using Heterogeneous Dielectric Multilayer Organic Substrate (이종 유전율의 다층 유기물 기판을 이용한 diplexer 구현)

  • Lee, Jae-Yong;Moon, Byung-Moo;Park, Se-Hoon;Yoo, Chan-Sei;Lee, Woo-Sung;Kim, Jun-Chul;Kang, Nam-Kee;Park, Jong-Chul
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.36-36
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    • 2007
  • 본 논문에서는 SoP-L(System on Package-Laminates) 기술을 이용하여 이종의 유전율을 가진 유기물 적층 기반의 수동소자를 이용한 GSM/DCS 대역 분리용 diplexer를 설계, 제작하였고 그 특성을 고찰하였다. SoP-L 기술은 LTCC기술과 같은 타 SoP 기술과 비교해서 이종의 물질을 접합하는데 용이하고 공정비용이 저렴하다. 이러한 장점을 이용하여 캐때시터는 유전율 40의 고유전율 재료를 사이에 두고 구성하였고, 인덕터 부문에는 유전율 4률 적용, 정방혈 스파이럴 구조로 두 개 층으로 구성하여 소형화를 이룰 수 있었다. 제작 시에 구리와 유기물을 적층, patterning 하였고, 수직 via hole 을 형성하고 구리의 무전해, 전해 도금 과정을 거쳐 각 소자를 연결하였다. 이러한 과정을 거쳐 제작된 diplexer의 GSM 저역 통과 필터는 0.52 dB이하의 삽입손실과 20 dB 이상의 반사손실을 가지고 DCS 통과 대역 부근에 notch 가 존재하도록 설계함으로써 DCS 통과 대역에서 17 dB 이상의 저지특성을 나타내었다. DCS 고역 통과 필터는 1.2 dB 이하의 삽입손실과 16 dB 이상의 반사손실을 가지며 GSM 통과 대역 부근에 notch를 가지도록 설계하여 GSM 통과대역에서 32 dB 이상의 저지특성을 나타내었다.

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Whole-body Vibration Exposure of Drill Operators in Iron Ore Mines and Role of Machine-Related, Individual, and Rock-Related Factors

  • Chaudhary, Dhanjee Kumar;Bhattacherjee, Ashis;Patra, Aditya Kumar;Chau, Nearkasen
    • Safety and Health at Work
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    • v.6 no.4
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    • pp.268-278
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    • 2015
  • Background: This study aimed to assess the whole-body vibration (WBV) exposure among large blast hole drill machine operators with regard to the International Organization for Standardization (ISO) recommended threshold values and its association with machine- and rock-related factors and workers' individual characteristics. Methods: The study population included 28 drill machine operators who had worked in four opencast iron ore mines in eastern India. The study protocol comprised the following: measurements of WBV exposure [frequency weighted root mean square (RMS) acceleration ($m/s^2$)], machine-related data (manufacturer of machine, age of machine, seat height, thickness, and rest height) collected from mine management offices, measurements of rock hardness, uniaxial compressive strength and density, and workers' characteristics via face-to-face interviews. Results: More than 90% of the operators were exposed to a higher level WBV than the ISO upper limit and only 3.6% between the lower and upper limits, mainly in the vertical axis. Bivariate correlations revealed that potential predictors of total WBV exposure were: machine manufacturer (r = 0.453, p = 0.015), age of drill (r = 0.533, p = 0.003), and hardness of rock (r = 0.561, p = 0.002). The stepwise multiple regression model revealed that the potential predictors are age of operator (regression coefficient ${\beta}=-0.052$, standard error SE = 0.023), manufacturer (${\beta}=1.093$, SE = 0.227), rock hardness (${\beta}=0.045$, SE = 0.018), uniaxial compressive strength (${\beta}=0.027$, SE = 0.009), and density (${\beta}=-1.135$, SE = 0.235). Conclusion: Prevention should include using appropriate machines to handle rock hardness, rock uniaxial compressive strength and density, and seat improvement using ergonomic approaches such as including a suspension system.

Understanding Interfacial Charge Transfer Nonlinearly Boosted by Localized States Coupling in Organic Transistors (유기트랜지스터 내부 편재화 준위간 커플링에 의한 계면 전하이동의 비선형적 가속화 현상의 이해)

  • Han, Songyeon;Kim, Soojin;Choi, Hyun Ho
    • Journal of Adhesion and Interface
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    • v.22 no.4
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    • pp.144-152
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    • 2021
  • Understanding charge transfer across the interface between organic semiconductor and gate insulator gives insight into the development of high-performance organic memory as well as highly stable organic field-effect transistors (OFETs). In this work, we firstly unveil a novel interfacial charge transfer mechanism, in which hole transfer from organic semiconductor to polymer insulator was nonlinearly boosted by localized states coupling. For this, OFETs based on rubrene single crystal semiconductor and Mylar gate insulator were fabricated via vacuum lamination, which allows stable repetition of lamination and delamination between semiconductor and gate insulator. The surfaces of rubrene single crystal and Mylar film were selectively degraded by photo-induced oxygen diffusion and UV-ozone treatment, respectively. Consequently, we found that the interfacial charge transfer and resultant bias-stress effect were nonlinearly boosted by coupling between localized states in rubrene and Mylar. In particular, the small number of localized states in rubrene single crystal provided fluent pathway for interfacial charge transport.

Intracorporeal Esophagojejunostomy during Reduced-port Totally Robotic Gastrectomy for Proximal Gastric Cancer: a Novel Application of the Single-Site® Plus 2-port System

  • Choi, Seohee;Son, Taeil;Song, Jeong Ho;Lee, Sejin;Cho, Minah;Kim, Yoo Min;Kim, Hyoung-Il;Hyung, Woo Jin
    • Journal of Gastric Cancer
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    • v.21 no.2
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    • pp.132-141
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    • 2021
  • Purpose: Intracorporeal esophagojejunostomy during reduced-port gastrectomy for proximal gastric cancer is a technically challenging technique. No study has yet reported a robotic technique for anastomosis. Therefore, to address this gap, we describe our reduced-port technique and the short-term outcomes of intracorporeal esophagojejunostomy. Materials and Methods: We conducted a retrospective review of patients who underwent a totally robotic reduced-port total or proximal gastrectomy between August 2016 and March 2020. We used an infra-umbilical Single-Site® port with two additional ports on both sides of the abdomen. To transect the esophagus, a 45-mm endolinear stapler was inserted via the right abdominal port. The common channel of the esophagojejunostomy was created between the apertures in the esophagus and proximal jejunum using a 45-mm linear stapler. The entry hole was closed with a 45-mm linear stapler or robot-sewn continuous suture. All anastomoses were performed without the aid of an assistant or placement of stay sutures. Results: Among the 40 patients, there were no conversions to open, laparoscopic, or conventional 5-port robotic surgery. The median operation time and blood loss were 254 min and 50 mL, respectively. The median number of retrieved lymph nodes was 40.5. The median time to first flatus, soft diet intake, and length of hospital stay were 3, 5, and 7 days, respectively. Three (7.5%) major complications, including two anastomosis-related complications and a case of small bowel obstruction, were treated with an endoscopic procedure and re-operation, respectively. No mortality occurred during the study period. Conclusions: Intracorporeal esophagojejunostomy during reduced-port gastrectomy can be safely performed and is feasible with acceptable surgical outcomes.