• Transactions on Electrical and Electronic Materials
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• v.2 no.4
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• pp.15-18
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• 2001

A new small scaling Lateral Trench Insulated Gate Bipolar Transistor (SSLTIGBT) was proposed to improve the characteristics of the device. The entire electrode of the LTIGBT was replaced with a trench-type electrode. The LTIGBT was designed so that the width of device was no more than 10 ${\mu}{\textrm}{m}$. The latch-up current densities were improved by 4.5 and 7.6 times, respectively, compared to those of the same sized conventional LTIGBT arid the conventional LTIGBT which has the width of 17 ${\mu}{\textrm}{m}$. The enhanced latch-up capability of the SSLTIGBT was obtained due to the fact that the hole current in the device reaches the cathode via the p+ cathode layer underneath the n+ cathode layer, directly. The forward blocking voltage of the SSLTIGBT was 125 V. At the same size, those of the conventional LTIGBT and the conventional LTIGBT with the width of 17 ${\mu}{\textrm}{m}$ were 65 V and 105 V, respectively. Because the proposed device was constructed of trench-type electrodes, the electric field In the device were crowded to trench oxide. Thus, the punch through breakdown of LTEIGBT occurred late.

• Proceedings of the KIEE Conference
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• 2003.07d
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• pp.2807-2808
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• 2003

말초 신경계에서 손상된 신경은 그 손상된 정도에 따라 재생의 정도가 달라진다. 이러한 신경 재생의 정도를 확인할 수 있는 방법으로 초미세 전극 어레이 기술이 연구되고 있는데 이것은 전기신호경로(via hole)를 초미세 전극어레이를 제작하여, 손상된 신경의 근위부(proximal stump)와 원위부(distal stump) 사이에 직접 삽입하여 선경으로부터 재생되어온 신경 섬유의 전기적 전도 선호를 측정 및 기록하는 것이다. 이는 신경 재생을 관찰하는 방법으로서 신경보철(neural prostheses) 기술에 이용된다. 따라서, 본 논문에서는 손상된 신경의 재생을 관찰하기 위한 implantable microelectrode array system을 설계하고, 원 신호인 선경 전도 신호의 특성과 제작된 이식형 초미세전극(implantable microelectrode)의 특성을 고찰하며, 동물 실험을 통하여 그 성능을 검증하였다.

• Journal of the Optical Society of Korea
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• v.9 no.4
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• pp.162-168
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• 2005

Extraordinary phenomena related to the transmission of light via metallic films with subwavelength holes and grooves are known to be due to resonant excitation and interference of surface waves. These waves make various surface structures to have optically effective responses. Further, a related study subject involves the control of light transmitted from a single hole or slit by surrounding it with diffractive structures. This paper reports on the effects of controlling light with a periodic groove structure with Fresnel-type chirping. In Fresnel-type chirping, diffracted surface waves are coherently converged into a focus, and it is designed considering the conditions of constructive interference and angular spectrum optimization under the assumption that the surface waves are composite diffracted evanescent waves with a well-defined in-plane wavenumber. The focusing ability of the chirped periodic structures is confirmed experimentally by two-beam attenuated total reflection coupling. Critical factors for achieving subwavelength foci and bounds on size of focal spots are discussed in terms of the simulation, which uses the FDTD algorithm.

• Laser Solutions
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• v.14 no.4
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• pp.14-20
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• 2011

The advantage of using lasers for through silicon via (TSV) drilling is that they allow higher flexibility during manufacturing because vacuums, lithography, and masks are not required; furthermore, the lasers can be applied to metal and dielectric layers other than silicon. However, conventional nanosecond lasers have disadvantages including that they can cause heat affection around the target area. In contrast, the use of a picosecond laser enables the precise generation of TSVs with a smaller heat affected zone. In this study, a comparison of the thermal and crystallographic defect around laser-drilled holes when using a picosecond laser beam with varing a fluence and repetition rate was conducted. Notably, the higher fluence and repetition rate picosecond laser process increased the experimentally recast layer, surface debris, and dislocation around the hole better than the high fluence and repetition rate. These findings suggest that even the picosecond laser has a heat accumulation effect under high fluence and short pulse interval conditions. To eliminate these defects under the high speed process, the CDE (chemical downstream etching) process was employed and it can prove the possibility to applicate to the TSV industry.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.12 no.5
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• pp.963-970
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• 2008

Recently, several papers for reading meters remotely using RFID/USN technologies have been presented. In the case of water meter, there has been neither commercial product nor paper. In this paper, we describe the design and implementation of wireless digital water meter with low power consumption. We use magnetic hole sensors to compute the amount of water consumption. The meter of water consumption is transferred via ZigBee wireless protocol to a gateway. Low power consumption design is essential since a battery should last till the life time of water meter. We present that dual batteries haying 3V, 3000mAh, would last 8 years by analyzing the real power consumption of our water meter.

• Current Optics and Photonics
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• v.3 no.1
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• pp.16-21
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• 2019

We present a broad-bandwidth comb-spacing-swept source (CSWS) based on a differential polarization delay line (DPDL) for interferometric three-dimensional (3D) imaging. The comb spacing of the CSWS is repeatedly swept by the tunable DPDL in the multiwavelength source to provide depth-scanning optical coherence tomography (OCT). As the polarization differential delay of the DPDL is tuned from 5 to 15 ps, the comb spacing along the wavelength continuously varies from 1.6 to 0.53 nm, respectively. The wavelength range of various semiconductor optical amplifiers and the cavity feedback ratio of the tunable fiber coupler are experimentally selected to obtain optimal conditions for a broader 3-dB bandwidth of the multiwavelength spectrum and thus provide a higher axial resolution of $35{\mu}m$ in interferometric OCT imaging. The proposed CSWS-OCT has a simple imaging interferometer configuration without reference-path scanning and a simple imaging process without the complex Fourier transform. 3D surface images of a via-hole structure on a printed circuit board and the top surface of a coin were acquired.

• Current Optics and Photonics
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• v.3 no.2
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• pp.143-149
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• 2019

Shape ellipticity dependence of the exciton fine energy levels in CdTe and CdSe nanocrystal quantum dots were compared theoretically by considering the crystal structure and the Coulomb interaction of an electron and a hole. While quantum dot ellipticity changes from an oblate to prolate quantum dot via spherical shape, both the fine energy levels and the dipole moment in wurtzite structure of a CdSe quantum dot change linearly for ellipticity. In contrast, CdTe quantum dots were found to show a level crossing between the bright and dark exciton states with a significant change of the dipole moment due to the cubic structure. Shape ellipticity dependence of the optical nonlinearities in CdTe and CdSe nanocrystal quantum dots was also calculated by using semiconductor Bloch equations. For a spherical shape quantum dot, only $1^L$ dominates the optical nonlinearities in a CdSe quantum dot, but both $1^U$ and $0^U$ contribute in a CdTe quantum dot. As excitation pulse area becomes strong (${\sim}{\pi}$), the optical nonlinearities of both CdSe and CdTe quantum dots are mainly governed by absorption saturation. However, in the case of a prolate CdTe quantum dot, the real part of the nonlinear refractive index becomes relatively significant.

• Journal of the Semiconductor & Display Technology
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• v.20 no.2
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• pp.98-102
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• 2021

GaOOH is obtained via hydrothermal synthesis procedure. The formed GaOOH is turned into α-Ga₂O₃ at 500℃ annealing. As the annealing temperatures increase the α-Ga₂O₃ is in part turned into β-Ga₂O₃ and fully turned into β-Ga₂O₃ after 1100℃. XPS and PL results reveal that heterojunction interface between α-Ga₂O₃ and β-Ga₂O₃ become maxim at 500℃ annealing condition, which result in the highest photocatalytic activity. The presence of heterojunction interface slows down the recombination process by separating photogenerated electron-hole pairs and thereby enhance the overall photocatalytic activity.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.3
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• pp.308-310
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• 2022

Ultrawide bandgap gallium oxide (Ga₂O₃) semiconductors are known to have excellent photocatalytic properties due to their high redox potential. In this study, CO₂ reduction is demonstrated using nanostructured Ga₂O₃ photocatalyst under ultraviolet (254 nm) light source conditions. After the CO₂ reduction, C₂H₄ remained as a by-product in this work. Nanostructured Ga₂O₃ photocatalyst also showed an excellent endurance characteristic. Photogenerated electron-hole pairs boosted the CO₂ reduction to C₂H₄ via nanostructured Ga₂O₃ photocatalyst, which is attributed to the ultrawide and almost direct bandgap characteristics of the gallium oxide semiconductor. The findings in this work could expedite the realization of CO₂ reduction and a simultaneous C₂H₄ production using a low cost and high performance photocatalyst.

• Structural Engineering and Mechanics
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• v.85 no.2
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• pp.147-161
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• 2023

Based on the ideas of variational differential quadrature (VDQ) and finite element method (FEM), a numerical approach named as VDQFEM is applied herein to study the large deformations of plate-type structures under static loading with arbitrary shape hole made of functionally graded graphene platelet-reinforced composite (FG-GPLRC) in the context of higher-order shear deformation theory (HSDT). The material properties of composite are approximated based upon the modified Halpin-Tsai model and rule of mixture. Furthermore, various FG distribution patterns are considered along the thickness direction of plate for GPLs. Using novel vector/matrix relations, the governing equations are derived through a variational approach. The matricized formulation can be efficiently employed in the coding process of numerical methods. In VDQFEM, the space domain of structure is first transformed into a number of finite elements. Then, the VDQ discretization technique is implemented within each element. As the last step, the assemblage procedure is performed to derive the set of governing equations which is solved via the pseudo arc-length continuation algorithm. Also, since HSDT is used herein, the mixed formulation approach is proposed to accommodate the continuity of first-order derivatives on the common boundaries of elements. Rectangular and circular plates under various boundary conditions with circular/rectangular/elliptical cutout are selected to generate the numerical results. In the numerical examples, the effects of geometrical properties and reinforcement with GPL on the nonlinear maximum deflection-transverse load amplitude curve are studied.