• Current Applied Physics
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• v.18 no.11
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• pp.1451-1457
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• 2018

Injection compression molding (ICM) is an advantageous processing method for producing thin and large polymeric parts in a robust manner. In the current study, we employed the ICM process for an energy-related application, i.e., thin and large polymeric battery case. A mold for manufacturing the battery case was fabricated using injection molding. The filling behavior of molten polymer in the mold cavity was investigated experimentally. To provide an in-depth understanding of the ICM process, ICM and normal injection molding processes were compared numerically. It was found that the ICM had a relatively low filling pressure, which resulted in reduced shrinkage and warpage of the final products. Effect of the parting line gap on the ICM characteristics, such as filling pressure, clamping force, filling time, volumetric shrinkage, and warpage, was analyzed via numerical simulation. The smaller gap in the ICM parting line led to the better dimensional stability in the finished product. The ICM sample using a 0.1 mm gap showed a 76% reduction in the dimensional deflection compared with the normal injection molded part.

• Korean Journal of Metals and Materials
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• v.56 no.11
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• pp.822-828
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• 2018

P-type Ce/Yb-filled skutterudites were synthesized, and their charge transport and thermoelectric properties were investigated with partial double filling and charge compensation. In the case of $(Ce_{1-z}Yb_z)_{0.8}Fe_4Sb_{12}$ without Co substitution, the marcasite ($FeSb_2$) phase formed alongside the skutterudite phase, but the generation of the marcasite phase was inhibited by increasing Co concentration. The electrical conductivity decreased with increasing temperature, exhibiting degenerate semiconductor behavior. The Hall and Seebeck coefficients were positive, which confirmed that the specimens were p-type semiconductors with holes as the major carriers. The carrier concentration decreased as the concentration of Ce and Co increased, which led to decreased electrical conductivity and increased Seebeck coefficient. The thermal conductivity decreased due to a reduction in electronic thermal conductivity via Co substitution, and due to decreased lattice thermal conductivity via double filling of Ce and Yb. $(Ce_{0.25}Yb_{0.75})_{0.8}Fe_{3.5}Co_{0.5}Sb_{12}$ exhibited the greatest dimensionless figure of merit (ZT = 0.66 at 823 K).

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2009.10a
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• pp.697-698
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• 2009

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.11a
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• pp.191-191
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• 2015

반도체 소자 성능 향상을 위한 3차원 TSV배선 공정이 연구되었다. 전기도금을 이용한 TSV 공정 시 기존에는 황산 구리 수용액내에 억제제, 가속제, 평탄제등을 첨가한 복잡한 전해질이 사용되었지만 본 연구에서는 억제제만을 이용하여 Cu bottom-up filling에 성공하여 전해질의 조성을 단순화 시켰다.

• Journal of Welding and Joining
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• v.27 no.3
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• pp.17-22
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• 2009

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2004.11a
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• pp.70-70
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• 2004

• Journal of Electrochemical Science and Technology
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• v.11 no.1
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• pp.60-67
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• 2020

In this study, copper (II) oxide powder for electroplating was prepared by recovering CuCl₂ from NaClO₃ type etching wastes via recovered non-sintering two step chemical reaction. In case of alkali copper carbonate [mCuCo₃·nCu(OH)₂], first reaction product, CuCo₃ is produced more than Cu(OH)₂ when the reaction molar ratio of sodium carbonate is low, since m is larger than n. As the reaction molar ratio of sodium carbonate increased, m is larger than n and Cu(OH)₂ was produced more than CuCO₃. In the case of m has same values as n, the optimum reaction mole ratio was 1.44 at the reaction temperature of 80℃ based on the theoretical copper content of 57.5 wt. %. The optimum amount of sodium hydroxide was 120 g at 80℃ for production of copper (II) oxide prepared by using basic copper carbonate product of first reaction. At this time, the yield of copper (II) oxide was 96.6 wt.%. Also, the chloride ion concentration was 9.7 mg/L. The properties of produced copper (II) oxide such as mean particle size, dissolution time for sulfuric acid, and repose angle were 19.5 mm, 64 second, and 34.8°, respectively. As a result of the hole filling test, it was found that the copper oxide (II) prepared with 120 g of sodium hydroxide, the optimum amount of basic hydroxide for copper carbonate, has a hole filling of 11.0 mm, which satisfies the general hole filling management range of 15 mm or less.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.10 no.5
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• pp.85-90
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• 2011

In this paper a design procedure via computer-aided molding simulation is presented to optimize the air-trap locations in a speaker encloser of mobile phone. The molding flow simulation reveals that the race-tracking phenomenon is the dominant feature in the current mold design. In obtaining an optimal filling pattern, the local modifications of the wall thickness such as in a flow leader attachment are considered as the primary control factor, and both the gate position and the filling time become the secondary control factor. In the one-at-a-time approach, the last location to be filled in the mold cavity could be successfully moved to the extremities of the part, allowing a natural ventilation of entrapped air through the mold parting plane.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.2 s.35
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• pp.111-119
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• 2005

Stack specimen with three dimensional interconnection structure through Cu via of $75{\mu}m$ diameter, $90{\mu}m$ height and $150{\mu}m$ pitch was successfully fabricated using subsequent processes of via hole formation with Deep RIE (reactive ion etching), Cu via filling with pulse-reverse electroplating, Si thinning with CMP, photolithography, metal film sputtering, Cu/Sn bump formation, and flip chip bonding. Contact resistance of Cu/Sn bump and Cu via resistance could be determined ken the slope of the daisy chain resistance vs the number of bump joints of the flip chip specimen containing Cu via. When flip- chip bonded at $270^{\circ}C$ for 2 minutes, the contact resistance of the Cu/Sn bump joints of $100{\times}100{\mu}m$ size was 6.7m$\Omega$ and the Cu via resistance of $75{\mu}m$ diameter, $90{\mu}m$ height was 2.3m$\Omega$.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.05a
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• pp.136-136
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• 2015

2007년 일본에서 지갑전화나 지상파 디지털TV 방송기능을 탑재한 휴대전화개발에 힘을 쏟고 있을 무렵, 해외에서 컴퓨터에 가까운 스마트폰이라는 다기능단말기 개발이 진행되고 있었다. 스마트폰은 젊은이를 중심으로 인기가 높아지고 있다. 휴대전화를 시작으로 정밀전자기기에는 인쇄배선판(이하, PWB: Printed Wiring Board)이 내장되어 있다. PWB는 향후 하이브리드차나 전기자동차의 발전과 함께, 차량탑재 수요도 높아질 것이다. 본고에서는 PWB를 지탱하는 동 도금 Via Hole메움에 대하여 기술하였다.