• Journal of the Semiconductor & Display Technology
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• v.2 no.3
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• pp.7-11
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• 2003

In this research, the etching characteristics of via contact and deep contact hole have been studied using multi-pole inductively coupled plasma(MICP) etching system. We investigated Plasma density of MICP source using the Langmuir probe and etching characteristics with RF frequency, wall temperature, chamber gap, and gas chemistry containing Carbon and Fluorine. As the etching time increases, formation of the polymer increases. To improve the polymer formation, we controlled the temperature of the reacting chamber, and we found that temperature of the chamber was very effective to decrease the polymer thickness. The deep contact etch profile and high selectivity(oxide to photoresist) have been achieved with the optimum mixed gas ratio containing C and F and the temperature control of the etching chamber.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.1
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• pp.7-14
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• 2002

In this paper, neutral networks are used to build models of oxide film etched In CHF$_3$/CF$_4$ with a magnetically enhanced reactive ion etcher(MERIE). A statistical 2$\^$4-1/ experimental design plus one center point was used to characterize relationships between process factors and etch responses. The factors that were varied include radio frequence(rf) power, pressure, CHF$_3$ and CF$_4$ flow rates. Resultant 9 experiments were used to train neural networks and trained networks were subsequently tested on its appropriateness using additionally conducted 8 experiments. A total of 17 experiments were thus conducted for this modeling. The etch responses modeled are dc bias voltage, etch rate and etch uniformity A qualitative, good agreement was obtained between predicted and observed behaviors.

• Korean Journal of Metals and Materials
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• v.49 no.11
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• pp.905-909
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• 2011

The formation of front metal contact silicon solar cells is required for low cost, low contact resistance to silicon surfaces. One of the available front metal contacts is Ni/Cu plating, which can be mass produced via asimple and inexpensive process. A selective emitter, meanwhile, involves two different doping levels, with higher doping (${\leq}30{\Omega}/sq$) underneath the grid to achieve good ohmic contact and low doping between the grid in order to minimize the heavy doping effect in the emitter. This study describes the formation of a selective emitter and a nickel silicide seed layer for the front metallization of silicon cells. The contacts were thickened by a plated Ni/Cu two-step metallization process on front contacts. The experimental results showed that the Ni layer via SEM (Scanning Electron Microscopy) and EDX (Energy dispersive X-ray spectroscopy) analyses. Finally, a plated Ni/Cu contact solar cell displayed efficiency of 18.10% on a $2{\times}2cm^2$, Cz wafer.

• ETRI Journal
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• v.35 no.4
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• pp.571-577
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• 2013

The fabrication of a thin-film transistor backplane and a liquid-crystal display using printing processes can eliminate the need for photolithography and offers the potential to reduce the manufacturing costs. In this study, we prepare contact via structures through a poly(methyl methacrylate) polymer insulator layer using inkjet printing. When droplets of silver ink composed of a polymer solvent are placed onto the polymer insulator and annealed at high temperatures, the silver ink penetrates the interior of the polymer and generates conducting paths between the top and bottom metal lines through the partial dissolution and swelling of the polymer. The electrical property of various contact via-hole interconnections is investigated using a semiconductor characterization system.

• Journal of the Microelectronics and Packaging Society
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• v.12 no.2 s.35
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• pp.111-119
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• 2005

Stack specimen with three dimensional interconnection structure through Cu via of $75{\mu}m$ diameter, $90{\mu}m$ height and $150{\mu}m$ pitch was successfully fabricated using subsequent processes of via hole formation with Deep RIE (reactive ion etching), Cu via filling with pulse-reverse electroplating, Si thinning with CMP, photolithography, metal film sputtering, Cu/Sn bump formation, and flip chip bonding. Contact resistance of Cu/Sn bump and Cu via resistance could be determined ken the slope of the daisy chain resistance vs the number of bump joints of the flip chip specimen containing Cu via. When flip- chip bonded at $270^{\circ}C$ for 2 minutes, the contact resistance of the Cu/Sn bump joints of $100{\times}100{\mu}m$ size was 6.7m$\Omega$ and the Cu via resistance of $75{\mu}m$ diameter, $90{\mu}m$ height was 2.3m$\Omega$.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.10
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• pp.25-34
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• 2002

In this paper, silicidation induced Schottky contact area was obtained using the current voltage(I-V) characteristics of shallow cobalt silicided p+-n and n+-p junctions. In reverse bias region, Poole-Frenkel barrier lowering influenced predominantly the reverse leakage current, masking thereby the effect of Schottky contact formation. However, Schottky contact was conclusively shown to be the root cause of the modified I-V behavior of n+-p junction in the forward bias region. The increase of leakage current in silicided n+-p diodes is consistent with the formation of Schottky contact via cobalt slicide penetrating into the p-substrate or near to the junction area and generating trap sites. The increase of reverse leakage current is proven to be attributed to the penetration of silicide into depletion region in case of the perimeter intensive n+-p junction. In case of the area intensive n+-p junction, the silicide penetrated near to the depletion region. There is no formation of Schottky contact in case of the p+-n junction where no increase in the leakage current is monitored. The Schottky contact amounting to less than 0.01% of the total junction was extracted by simultaneous characterization of forward and reverse characteristics of silicided n+-p diode.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 1991.06a
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• pp.1-30
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• 1991

The lubrication state between contacting bodies with rolling and sliding under loaded condition is generally understood by the conception shown in Figure 1. When the lubricating oil film formation between facing bodies is good enough to separate these bodies by the hydrodynamic pressure, this state is called by the expression of "hydrodynamic lubrication". The thickness of oil film is so large that the lubricating oil between facing bodies behaves as fluid and metal-to-metal contact between surface roughness asperities on facing bodies does not occur. When the oil film thickness becomes thinner or when the surface roughness height becomes larger, top of surface roughness asperities on facing bodies reaches very near to each other and there the oil or absorbed oil molecules on the surface of facing bodies behave no more as fluid. Partly metal-to-metal contact of surface roughness asperities occurs. Such lubrication state is called by the expression "mixed-lubrication". When the oil film thickness becomes more thinner or surface roughness height becomes larger, metal-tometal contact or contact via absorbed oil molecules dominate at most of the part in contact zone. Such state is called by the expression "boundary lubrication". Schematic representation of these three regimes of lubrication is shown in Figure 1.rication is shown in Figure 1.

• Asia pacific journal of information systems
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• v.11 no.4
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• pp.27-41
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• 2001

CRM is at the core of any customer-focused business strategy and includes the people, processes, and technology questions associated with marketing, sales, and service. In today's hyper-competitive world, organizations looking to implement successful CRM strategies need to focus on a common view of the customer using integrated information systems and contact center implementations that allow the customer to communicate via any desired communication channel. A CRM solution contains a number of sophisticated tools that enable to extract detailed information about customers. This information can be used to gain a better understanding of customers. From this we can determine trends, and so refine business toward customers' needs and target new products to particular customer groups. This paper presents an approach for forming the product-customer groups using neural networks for customer relationship management. The Carpenter-Grossberg's neural network, which has been used for manufacturing cell formation in group technology, is modified and applied for product-customer group formation. As a result of numerical experiments, it is also useful for more complex problems in which customers have different preferences for each product.

• Bulletin of the Korean Chemical Society
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• v.34 no.12
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• pp.3805-3810
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• 2013

The surface modification of silica particles (SPs) was systemically conducted by the treatment of 0.1-10 wt % phenylsilanetriol (PST) on the basis of SPs used through two step processes: 1) the PST coating of SPs via evaporation under reduced pressure and 2) their thermal condensation leading to Si-O-Si bond formation via heating at $130^{\circ}C$. The evaluation of the modified SPs was conducted by the simple floating test on water and the measurement of the contact angle (CA) of water droplet on the 2-dimensional layer of modified SPs on slide glass. When PST was used about 2 wt % or above on the basis of SPs (about average size: 50 nm) used, the modified SPs were fully floated on the water and all dispersed into upper organic solvent layer after a shaking with the mixture of the water and benzene, indicating that the modified SPs have hydrophobic properties. The modified SPs were characterized by $^{29}Si$ MAS NMR and physicochemical properties including SEM, TEM, BET, adsorption/desorption isotherms, etc. were measured and compared each other in details. This research demonstrates that the organosilanetriol is a good modifier applicable for the surface modification of inorganic oxide particles using a low amount of modifier on the basis of oxide particles used.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.165-165
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• 2009

현재 반도체나 이동통신 분야는 사용자의 요구에 따라 PCB의 회로선폭이 갈수록 좁아지고 있다. 이러한 정밀 부품을 제조하기 위한 제조공정에서 각광받기 시작한 기술 중 하나가 대기압 플라즈마 기술이다. 본 연구에서는 미세패턴 형성이 가능한 에폭시 본딩 필름위에 무전해 도금공정을 통한 패턴 도금법을 이용하여 패턴을 형성하였고, 형성된 패턴에 대기압 플라즈마 처리 횟수에 따른 접촉각(Contact Angle)과 Peel Strength의 변화를 분석하였다. 또한 에폭시 본딩 필름을 이용한 Build-up공정을 거쳐 Micro Via를 형성하여 대기압 플라즈마 처리 횟수에 따른 Via 표면을 분석하였다. 대기압 플라즈마 기술은 진공식에 비해 소규모 장비를 이용한 전처리가 가능하고, 초기 설비비용을 절감하는데 탁월한 효과가 있어 널리 사용하는 기술 중 하나이다. 이 연구를 통하여 대기압 플라즈마 처리 횟수에 따른 표면에너지의 변화로 인한 접촉각이 좋아지는 것을 알 수 있으며, 대기압 플라즈마 처리를 한 패턴표면이 친수성으로 변하면서 현상된 드라이 필름 사이로 도금액이 원활히 공급되어서 미세패턴 모양이 우수하게 구현되었음을 알 수 있었다. 또한 Via Filling에도 뛰어난 효과가 있었음을 확인할 수 있었다.