• Proceedings of the Computational Structural Engineering Institute Conference
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• 2010.04a
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• pp.480-483
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• 2010

착륙장치는 완충장치를 이용하여 항공기 착륙 시의 충격을 흡수하는 역할을 한다. 여러 방식의 완충장치가 있으나, Oil에 의한 감쇠력과 Gas에 의한 스프링력을 이용하여 에너지를 흡수하는 유공압 방식이 가장널리 사용되고 있다. 착륙장치 성능해석에서는 다양한 착륙조건에 대한 Dynamic simulation을 통해 최적의 Orifice 형상과 Gas spring 특성을 결정하고, 설계에 필요한 착륙하중을 구하게 된다. 이 논문에서는 상용 프로그램인 VI-Aircraft를 이용한 착륙장치 성능해석 과정을 소개한다. 유공압 완충장치의 모델링 및 Landing simulation 결과를 분석하고, 이에 따른 완충효율 최적화 과정을 제시한다.

• Journal of Acupuncture Research
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• v.18 no.2
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• pp.51-66
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• 2001

The purpose of this morphological studies was to investigate the central neural pathway projecting to the acupoints $B_{62}$ and $K_6$ using the neuroanatomical method following injection of transsynaptic neurotropic virus, pseudorabies virus(PRV-Ba and PRV-Ga) into the $B_{62}$ and $K_6$. After survival times of 96 hours following injection into the twenty rats with PRV-Ba(Bartha strain) and PRV-Ga(Bartha strain, ${\beta}$-galacidodase insertion). They were perfused, and their spinal cord and brain were frozen sectioned($30{\mu}m$). These sections were stained by X-gal histochemical and PRV immunohistochemical staining method, and observed with light microscope. The results were as follows : 1. In spinal cord, overlaped PRV-Ba and PRV-Ga labeled neurons projecting to the $B_{62}$ and $K_6$ were founded in thoracic, lumbar and sacral spinal segments. In thoracic spinal segments, Densely labeled areas were founded in lamina IV, V, VII(intermediolateral nucleus) and X areas. In lumbar segemnts, labeled areas were founded in lamina II, IV, V and X areas. In sacral spinal segments, labeled areas were founded in lamina IV, V and VI areas. 2. In brain, overlaped PRV-Ba and PRV-Ga labeled neurons projecting to the $B_{62}$ and $K_6$ were founded in the $A_1$ noradrenalin cells/$C_1$ adrenalin cells/caudoventrolateral reticular nucleus, rostroventrolateral reticular nuclens, nucleus tractus solitarius, area postrema, raphe obscurus nucleus, raphe paltidus nucleus, raphe magnus nucleus, lateral paragigantoceltular nucleus, lateral rcticular nucleus, gigantocellular nucleus, locus coeruleus, subcoeruleus nucleus, motor trigeminal nucleus, Kolliker-Fuse nucleus, $A_5$ cell group, central gray matter, oculomotor nerve, paraventricular hypothalamic nucleus, median eminence, amygdaloid nucleus, frontal cortex, forelimb area, hindlimb area, 1, 2 areas of parietal cortex and granular and agranular cortex. This results were suggest that overlaped PRV-Ba and PRV-Ga labeled areas projecting to the $B_{62}$ and $K_6$ may be related to the emotional relay pathway in the central autonomic center.

• Proceedings of the Materials Research Society of Korea Conference
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• 2010.05a
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• pp.59-59
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• 2010

ZnO는 II-VI 족 화합물 반도체로써 상온에서 큰 엑시톤 결합에너지 (~60 meV) 를 가지며 밴드갭이 3.37 eV인 직접 천이형 반도체로 잘 알려진 물질이다. 이러한 ZnO의 물리적 특성은 광학소자로 상용화된 GaN와 유사하기 때문에 LED나 LD등의 광 소자 재료로 주목 받고 있다. 또한 ZnO는 3족 원소 (In, Ga, Al)를 도핑 함으로써 전기적 특성 제어가 가능한 장점을 가지고 있다. 본 연구는 펄스레이저 증착법 (Pulsed Laser Deposition)을 이용하여 Si (111) 기판 위에 ZnO:In 박막을 성장 시켰으며, 도핑된 indium 양에 따른 ZnO 박막의 배향성 변화를 관찰 하였다. X-선 회절 분석법 (X-ray diffraction), 탐침형 원자현미경 (Atomic Force Microscope) 그리고 투과전자 현미경 (Transmission Electron Microscope)을 측정하였다. XRD 측정 결과 un-doped ZnO 박막은 (002) 방향으로 c-축 우선성장 하였다. 그러나 ZnO 박막내의 Indium 양이 증가 할수록 (002) 방향에서 (101), (102), (103) 등의 (101) 방향으로 성장이 변화 하였으며 5 at.% 이상에서는 (100) 방향의 성장이 관찰 되었다. TEM 측정 결과 un-doped ZnO 박막은 columnar 구조로 성장 되었으나, Indium 양이 증가할수록 column의 size가 감소하며, 5 at.% 이상에서 columnar 구조 성장이 거의 관찰되지 않는다. AFM 결과에서는 Indium 양이 증가 할수록 박막의 표면거칠기와 결정립 크기가 감소하였다.

• 한국신재생에너지학회:학술대회논문집
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• 2011.11a
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• pp.53.1-53.1
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• 2011

현재 태양전지시장에서 비중이 많은 실리콘 태양전지는 높은 효율에 비해 제조 단가가 비싸다는 단점을 가지고 있다. 이에 비해 칼코파라이트 구조의 $CuInSe_2$ (CIS)계 화합물은 직접 천이형 반도체로서 높은 광흡수 계수($1{\times}105cm-{\acute{e}1$)와 밴드갭 조절의 용이성 및 열적 안정성 등으로 인해 고효율 박막 태양전지용 광흡수층 재료로 많은 관심을 끌고 있다. CIS 계 물질에 속하는 Cu(InGa)$Se_2$ (CIGS) 태양전지의 경우 양산화에 sputtering방식사용하고 Showa Shell에서는 대면적 CIGS 모듈 효율 13.4%를 달성한 바 있다. 현재 CIGS는 열처리하는 방법으로 selenization 공정을 사용하는데 이 공정은 유독한 $H_2Se$ gas를 이용해야 한다는 점과 긴 시간 동안 열처리를 해야 하는 단점을 가지고 있다. 따라서 이러한 단점을 보완하기 위해 본 연구에서는 전자빔을 사용하여 후속 공정을 실시하였다. 전자빔을 사용할 경우 낮은 온도에서 precursor를 처리하며 짧은 시간에 공정이 끝난다는 장점이 있다. 본 연구에서는 sodalime glass위에 조성비(Cu 60.87% Se 38.66%)인 Cu_2Se$ target(4.002"${\times}0.123$") 을 DC sputter를 이용하여 DC power를 50W,100W를 주고 Working pressure를 20,15,10,5,3,1mtorr로 조절하여 증착하였다. 전자빔의 세기 조건을 3Kv, Rf power 200W, Ar 7sccm로 전자빔 조사 시간을 1,2,3,4,5min으로 늘려가며 최적화 실험 하였고 최적화된 조건으로 $Cu_2Se$ target에 조사 하였다. 박막의 특성평가는 전자빔 조사 전/후에 대해 XRD, SEM, XRF, Hall measurement, UV-VIS을 이용하여 분석평가를 하였다. 이 실험은 $Cu_2Se$상이 자라는 특성과 표면 상태에 따라 CIGS박막을 증착하였을 때 나타나는 효율 변화를 알아 보기위한 초기 공정 실험이다.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.376-376
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• 2011

I-III-VI2 chalcopyrite compounds, particularly copper, indium, gallium selenide(Cu(InxGa1-x)Se2, CIGS), are effective light-absorbing materials in thin-film solar application. They are direct band-gap semiconductors with correspondingly high optical absorption coefficients. Also they are stable under long-term excitation. CIS (CIGS) solar cell reached conversion efficiencies as high as 19.5%. Several methods to prepare CIS (CIGS) absorber films have been reported, such as co-evaporation, sputtering, selenization, and electrodeposition. Until now, co-evaporation is the most successful technique for the preparation of CIS (CIGS) in terms of solar efficiency, but it seems difficult to scale up. CIS solar cells have been hindered by high costs associated with a fabrication process. Therefore, inorganic colloidal ink suitable for a scalable coating process could be a key step in the development of low-cost solar cells. Here, we will present the preparation of CIS photo absorption layer by a solution process using novel metal precursors. Chalcopyrite copper indium diselenide (CuInSe2) nanocrystals ranging from 5 to 20nm in diameter were synthesized by arrested precipitation in solution. For the fabrication of CIS photo absorption layer, the CuInSe2 colloidal ink was prepared by dispersing in organic solvent and used to drop-casting on molybdenum substrate. We have characterized the nanoparticless and CIS layer by XRD, SEM, TEM, and ICP.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.23.1-23.1
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• 2009

Transparent thin film transistor(TTFT)는 기존의 디스플레이가 가지고 있는 공간적, 시각적 제약을 해소하는 것이 가능하며, 이는 디스플레이 산업 및 기술이 지향하는 대면적, 저가격, 공정의 단순함을 해결해 줄 수 있기 때문에 최근 TTFT에 관한 연구가 급증하고 있다. 산화물 기반의 TFT는 유리, 금속, 플라스틱 등등 그 기판 종류에 상관없이 균일한 제작이 가능하며, 상온 및 저온에서 대면적으로 제작 가능하고, 저렴한 비용으로 제작 가능하다는 장점 때문에 최근 산화물을 기반으로 하는 TFT 연구가 많이 이루어지고 있다. 현재 TTFT 물질로 많이 연구되고 있는 산화물은 ZnO(3.4 eV)나 $InO_x$(3.6 eV), $GaO_x$(4.9 eV), $SnO_x$(3.7 eV)등의 물질과 각각의 조합으로 구성된 재료들이 주로 사용되고 있다. 가장 많은 연구가 이루어진 ZnO 기반의 TFT는 mobility와 switching 속도에서 우수한 특성을 보이나, amorphous ZnO 기반의 TFT의 경우 소자의 안정성이 떨어지는 것으로 보고되고 있다. 따라서 본 연구에서는 ZnO 보다 넓은 bandgap energy를 가질 수 있으며, n-type 특성을 보이고, amorphous 구조로 제작 가능한 IGZO 물질을 사용하여 RF magnetron sputtering 방법으로 박막 증착 온도의 변화를 주어 증착하였고, 증착된 IGZO 박막의 열처리를 통해 이에 따른 특성 변화를 분석하였다. Field emission scanning electron microscope(FESEM)와 surface profiler를 이용하여 IGZO 박막의 표면의 형상과 두께를 확인하였으며, x-ray diffraction(XRD) 분석을 통해 박막의 결정학적 특성을 관찰하였다. TTFT 물질로서 IGZO 박막의 적합성 여부를 확인하기 위하여 TFT를 만든 후 I-V를 측정하였으며, UV-vis를 이용하여 IGZO 박막의 투과율을 분석하여 TTFT로의 응용 가능성을 확인하였다.

• Journal of Korean Society of Forest Science
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• v.107 no.4
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• pp.402-411
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• 2018

This study was conducted to develop ingrowth estimation equations on Pinus densiflora found in Gangwon Province and in the center of Korean Peninsula, based on the National Forest Inventory (NFI)'s permanent sampling plot data. For this study, identical sampling plots in $5^{th}$ and $6^{th}$ NFI data were collected in order to identify ingrowth amounts for the last 5 years. Following two-stage approaches in developing the ingrowth estimation equations, the logistic regression model was used in the first stage to estimate the ingrowth probability. In the second stage, regression analysis on sampling plots with ingrowth occurrence was used to estimate the ingrowth amount. A candidate model was finally selected as an optimal model after a verification based on three evaluation statistics which include mean difference (MD), standard deviation of difference (SDD) and standard error of difference (SED). In results, a logistic regression model based on the number of sampling plot which did not result in ingrowth (model VI), was selected for an ingrowth probability estimation equation and exponential function including the species composition (SC) variable was optimal for an ingrowth estimation equation (model VII). The ingrowth estimation equations developed in this study also evaluated the estimation ability in various forest stand conditions, and no particular issue in fitness or applicability was observed.

• Tunnel and Underground Space
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• v.15 no.1 s.54
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• pp.47-54
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• 2005

One of the standard procedures of discontinuity survey is the joint set identification from the population of field orientation data. Discontinuity set identification is fundamental to rock engineering tasks such as rock mass classification, discrete element analysis, key block analysis. and discrete fracture network modeling. Conventionally, manual method using contour plot had been widely used for this task, but this method has some short-comings such as yielding subjective identification results, manual operations, and so on. In this study, the method of discontinuity set identification using genetic algorithm was introduced, but slightly modified to handle the orientation data. Finally, based on the genetic algorithm, we developed a FORTRAN program, Genetic Algorithm based Clustering(GAC) and applied it to two different discontinuity data sets. Genetic Algorithm based Clustering(GAC) was proved to be a fast and efficient method for the discontinuity set identification task. In addition, fitness function based on variance showed more efficient performance in finding the optimal number of clusters when compared with Davis - Bouldin index.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.543-543
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• 2013

Thin-film transistors (TFTs) based on oxide semiconductors have been regarded as promising alternatives for conventional amorphous and polycrystalline silicon TFTs. Oxide TFTs have several advantages, such as low temperature processing, transparency and high field-effect mobility. Lots of oxide semiconductors for example ZnO, SnO2, In2O3, InZnO, ZnSnO, and InGaZnO etc. have been researched. Particularly, zinc-tin oxide (ZTO) is suitable for channel layer of oxide TFTs having a high mobility that Sn in ZTO can improve the carrier transport by overlapping orbital. However, some issues related to the ZTO TFT electrical performance still remain to be resolved, such as obtaining good electrical contact between source/drain (S/D) electrodes and active channel layer. In this study, the bottom-gate type ZTO TFTs with staggered structure were prepared. Thin films of ZTO (40 nm thick) were deposited by DC magnetron sputtering and performed at room temperature in an Ar atmosphere with an oxygen partial pressure of 10%. After annealing the thin films of ZTO at $400^{\circ}C$ or an hour, Cu, Mo, ITO and Ti electrodes were used for the S/D electrodes. Cu, Mo, ITO and Ti (200 nm thick) were also deposited by DC magnetron sputtering at room temperature. The channel layer and S/D electrodes were defined using a lift-off process which resulted in a fixed width W of 100 ${\mu}m$ and channel length L varied from 10 to 50 ${\mu}m$. The TFT source/drain series resistance, the intrinsic mobility (${\mu}i$), and intrinsic threshold voltage (Vi) were extracted by transmission line method (TLM) using a series of TFTs with different channel lengths. And the performances of ZTO TFTs were measured by using HP 4145B semiconductor analyzer. The results showed that the Cu S/D electrodes had a high intrinsic field effect mobility and a low effective contact resistance compared to other electrodes such as Mo, ITO and Ti.

• Journal of the Korea Society of Computer and Information
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• v.25 no.7
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• pp.1-8
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• 2020

In this paper, we present an implementation of high speed image data transfer using XDMA for a video signal generation / acquisition device developed as a military test equipment. The technology proposed in this study obtains efficiency by replacing the method of copying data using the system buffer in the kernel area with the transmission and reception through the DMA engine in the FPGA. For this study, the device was developed as a PXIe platform in consideration of life cycle, and performance was maximized by using a low-cost FPGA considering mass productivity. The video I/O board implemented in this paper was tested by changing the AXI interface clock frequency and link speed through the existing memory copy method. In addition, the board was constructed using the DMA engine of the FPGA, and as a result, it was confirmed that the transfer speed was increased from 5~8Hz to 140Hz. The proposed method will contribute to strengthening defense capability by reducing the cost of device development using the PXIe platform and increasing the technology level.