• Title/Summary/Keyword: Vertically-aligned carbon nanotubes

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Well aligned carbon nanotubes grown on a large area Si substrate by thermal CVD

  • Lee, Cheol-Jin;Park, Jung-Hoon;Son, Kwon-Hee;Kim, Dae-Woon;Lee, Tae-Jae;Lyu, Seung-Chul;Kang, Seung-Youl;Lee, Jin-Ho;Park, Hyun-Ki;Lee, Chan-Jae;You, Jong-Hun
    • 한국정보디스플레이학회:학술대회논문집
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    • 2000.01a
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    • pp.57-58
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    • 2000
  • we have grown vertically aligned carbon nanotubes on a large area of Co-Ni codeposited Si substrates by thermal chemical vapor deposition using $C_2H_2$ gas. The carbon nanotubes grown by the thermal chemical vapor deposition are multi-wall structure, and the wall suface of nanotubes is covered with defective carbons or carbonaceous particles. The carbon nanotubes range from 50 to 120 nm in diameter and about 130 ${\mu}m$ in length at $950\;^{\circ}C$. Steric hindrance between nanotubes at an initial stage of the growth forces nanotubes to align vertically. The turn-on voltage was about 0.8 $V/{\mu}m$ with a current density of 0.1 ${\mu}A/cm^2$ and emission current reveals the Fowler-Nordheim mode.

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Surface structure modification of vertically-aligned carbon nanotubes and their characterization of field emission property

  • adil, Hawsawi;Jeong, Gu-Hwan
    • Proceedings of the Korean Vacuum Society Conference
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    • 2016.02a
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    • pp.159-159
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    • 2016
  • Vertically-aligned carbon nanotubes (VCNT) have attracted much attention due to their unique structural, mechanical and electronic properties, and possess many advantages for a wide range of multifunctional applications such as field emission displays, heat dissipation and potential energy conversion devices. Surface modification of the VCNT plays a fundamental role to meet specific demands for the applications and control their surface property. Recent studies have been focused on the improvement of the electron emission property and the structural modification of CNTs to enable the mass fabrication, since the VCNT considered as an ideal candidate for various field emission applications such as lamps and flat panel display devices, X-ray tubes, vacuum gauges, and microwave amplifiers. Here, we investigate the effect of surface morphology of the VCNT by water vapor exposure and coating materials on field emission property. VCNT with various height were prepared by thermal chemical vapor deposition: short-length around $200{\mu}m$, medium-length around $500{\mu}m$, and long-length around 1 mm. The surface morphology is modified by water vapor exposure by adjusting exposure time and temperature with ranges from 2 to 10 min and from 60 to 120oC, respectively. Thin films of SiO2 and W are coated on the structure-modified VCNT to confirm the effect of coated materials on field emission properties. As a result, the surface morphology of VCNT dramatically changes with increasing temperature and exposure time. Especially, the shorter VCNT change their surface morphology most rapidly. The difference of field emission property depending on the coating materials is discussed from the point of work function and field concentration factor based on Fowler-Nordheim tunneling.

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Synthesis of Vertically Aligned Single-Walled Carbon Nanotubes by Thermal Chemical Vapor Deposition (열 화학기상증착법을 이용한 수직 정렬된 단일벽 탄소나노튜브의 합성)

  • Jang, Sung-Won;Song, Woo-Seok;Kim, Yoo-Seok;Kim, Sung-Hwan;Park, Sang-Eun;Park, Chong-Yun
    • Journal of the Korean Vacuum Society
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    • v.21 no.2
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    • pp.113-119
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    • 2012
  • Carbon nanotubes have emerged as a promising material for multifaceted applications, such as composited nanofiber, field effect transistors, field emitters, gas sensors due to their extraordinary electrical and physical properties. In particular, synthesis of vertically aligned carbon nanotubes with a high aspect ratio has recently attracted attention for many applications. However, mass production of high-quality single-walled carbon nanotubes is still remain elusive. In this study, an effect of chemical vapor deposition conditions, including catalyst thickness, feedstock flow rate, and growth temperature, on synthesis of carbon nanotube was systematically investigated.

The Effect of Catalysts on the Growth Characteristic of Carbon Nanotubes

  • Lee, Tae-Young;Han, Jae-Hee;Choi, Sun-Hong;Yoo, Ji-Beom;Park, Chong-Yun;Jung, Tae-Won;Yu, Se-Gi;Yi, Whi-Kun;Kim, Jong-Min
    • 한국정보디스플레이학회:학술대회논문집
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    • 2002.08a
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    • pp.666-669
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    • 2002
  • Vertically aligned carbon nanotubes (CNTs) have been produced using various type of plasma enhanced chemical vapor deposition (PECVD). Catalysts such as Ni, Co, and Fe are used for growth of CNTs. To explain the effect of catalysts on the growth characteristics of CNTs, carbon species of $C_2H_2$ was observed in different catalysts using optical emission spectroscopy (OES) with theoretical calculation on the surface reaction in different catalysts.

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Influence of Flow Rate of Precursor on the Structure of Carbon Nanotubes Synthesized by Floating Catalyst Method (Floating Catalyst 법에서 주입유량에 따른 탄소나노튜브의 구조)

  • Kim, Myung-Soo;Kang, Eun-Jin;Kim, Mun-Geol;Han, Ling;Hahm, Hyun-Sik;Park, Hong-Soo
    • Journal of the Korean Applied Science and Technology
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    • v.22 no.1
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    • pp.35-42
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    • 2005
  • Aligned multi-wall carbon nanotubes (MWNTs) were synthesized through the catalytic decomposition of hydrocarbons in a quartz tube reactor. In this study, we investigated the influence of gas flow rate of feedstock on the structure and growth rate of vertically aligned carbon nanotubes produced by the floating catalyst method. As the flow rate of feedstock increased, the nanotube diameter became smaller and the length became longer. Although the growth rate also increased with the raise of flow rate, the optimum flow rate of feedstock existed for the crystallinity of carbon nanotubes.

Improvement Study on Vertical Growth of Carbon Nanotubes and their Field Emission Properties at ICPCVD (유도결합형 플라즈마 화학기상증착법에서 탄소나노튜브의 수직성장과 전계방출 특성 향상 연구)

  • 김광식;류호진;장건익
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.15 no.8
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    • pp.713-719
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    • 2002
  • In this study, the vertically well-aligned CNTs were synthesized by DC bias-assisted inductively coupled plasma hot-filament chemical vapor deposition (ICPHFCVD) using radio-frequence plasma of high density and that CNTs were vertically grown on Ni(300 )/Cr(200 )-deposited glass substrates at 58$0^{\circ}C$. This system(ICPHFCVD) added to tungsten filament in order to get thermal decompound and DC bias in order to vertically grow to general Inductively Coupled Plasma CVD. The grown CNTs by ICPHFCVD were developed to higher graphitization and fewer field emission properties than those by general ICPCVD. In this system, DC bias was effect of vortical alignment to growing CNTs. The measured turn-on fields of field emission property by general ICPCVD and DC bias-assisted ICPHFCVD were 5 V/${\mu}{\textrm}{m}$ and 3 V/${\mu}{\textrm}{m}$, respectively.

The Effect of Diffusion Barrier and thin Film Deposition Temperature on Change of Carbon Nanotubes Length (탄소나노튜브 길이 변화에 대한 확산방지층과 박막 증착 온도의 영향)

  • Hong, Soon-kyu;Lee, Hyung Woo
    • Journal of Powder Materials
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    • v.24 no.3
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    • pp.248-253
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    • 2017
  • In this study, we investigate the effect of the diffusion barrier and substrate temperature on the length of carbon nanotubes. For synthesizing vertically aligned carbon nanotubes, thermal chemical vapor deposition is used and a substrate with a catalytic layer and a buffer layer is prepared using an e-beam evaporator. The length of the carbon nanotubes synthesized on the catalytic layer/diffusion barrier on the silicon substrate is longer than that without a diffusion barrier because the diffusion barrier prevents generation of silicon carbide from the diffusion of carbon atoms into the silicon substrate. The deposition temperature of the catalyst and alumina are varied from room temperature to $150^{\circ}C$, $200^{\circ}C$, and $250^{\circ}C$. On increasing the substrate temperature on depositing the buffer layer on the silicon substrate, shorter carbon nanotubes are obtained owing to the increased bonding force between the buffer layer and silicon substrate. The reason why different lengths of carbon nanotubes are obtained is that the higher bonding force between the buffer layer and the substrate layer prevents uniformity of catalytic islands for synthesizing carbon nanotubes.

Carbon nanotube field emission display

  • Chil, Won-Bong;Kim, Jong-Min
    • Electrical & Electronic Materials
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    • v.12 no.7
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    • pp.7-11
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    • 1999
  • Fully sealed field emission display in size of 4.5 inch has been fabricated using single-wall carbon nanotubes-organic vehicle com-posite. The fabricated display were fully scalable at low temperature below 415$^{\circ}C$ and CNTs were vertically aligned using paste squeeze and surface rubbing techniques. The turn-on fields of 1V/${\mu}{\textrm}{m}$ and field emis-sion current of 1.5mA at 3V/${\mu}{\textrm}{m}$ (J=90${\mu}{\textrm}{m}$/$\textrm{cm}^2$)were observed. Brightness of 1800cd/$m^2$ at 3.7V/${\mu}{\textrm}{m}$ was observed on the entire area of 4.5-inch panel from the green phosphor-ITO glass. The fluctuation of the current was found to be about 7% over a 4.5-inch cath-ode area. This reliable result enables us to produce large area full-color flat panel dis-play in the near future. Carbon nanotubes (CNTs) have attracted much attention because of their unique elec-trical properties and their potential applica-tions [1, 2]. Large aspect ratio of CNTs together with high chemical stability. ther-mal conductivity, and high mechanical strength are advantageous for applications to the field emitter [3]. Several results have been reported on the field emissions from multi-walled nanotubes (MWNTs) and single-walled nanotubes (SWNTs) grown from arc discharge [4, 5]. De Heer et al. have reported the field emission from nan-otubes aligned by the suspension-filtering method. This approach is too difficult to be fully adopted in integration process. Recently, there have been efforts to make applications to field emission devices using nanotubes. Saito et al. demonstrated a car-bon nanotube-based lamp, which was oper-ated at high voltage (10KV) [8]. Aproto-type diode structure was tested by the size of 100mm $\times$ 10mm in vacuum chamber [9]. the difficulties arise from the arrangement of vertically aligned nanotubes after the growth. Recently vertically aligned carbon nanotubes have been synthesized using plasma-enhanced chemical vapor deposition(CVD) [6, 7]. Yet, control of a large area synthesis is still not easily accessible with such approaches. Here we report integra-tion processes of fully sealed 4.5-inch CNT-field emission displays (FEDs). Low turn-on voltage with high brightness, and stabili-ty clearly demonstrate the potential applica-bility of carbon nanotubes to full color dis-plays in near future. For flat panel display in a large area, car-bon nanotubes-based field emitters were fabricated by using nanotubes-organic vehi-cles. The purified SWNTs, which were syn-thesized by dc arc discharge, were dispersed in iso propyl alcohol, and then mixed with on organic binder. The paste of well-dis-persed carbon nanotubes was squeezed onto the metal-patterned sodalime glass throuhg the metal mesh of 20${\mu}{\textrm}{m}$ in size and subse-quently heat-treated in order to remove the organic binder. The insulating spacers in thickness of 200${\mu}{\textrm}{m}$ are inserted between the lower and upper glasses. The Y\ulcornerO\ulcornerS:Eu, ZnS:Cu, Al, and ZnS:Ag, Cl, phosphors are electrically deposited on the upper glass for red, green, and blue colors, respectively. The typical sizes of each phosphor are 2~3 micron. The assembled structure was sealed in an atmosphere of highly purified Ar gas by means of a glass frit. The display plate was evacuated down to the pressure level of 1$\times$10\ulcorner Torr. Three non-evaporable getters of Ti-Zr-V-Fe were activated during the final heat-exhausting procedure. Finally, the active area of 4.5-inch panel with fully sealed carbon nanotubes was pro-duced. Emission currents were character-ized by the DC-mode and pulse-modulating mode at the voltage up to 800 volts. The brightness of field emission was measured by the Luminance calorimeter (BM-7, Topcon).

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