Well aligned carbon nanotubes grown on a large area Si substrate by thermal CVD

  • Lee, Cheol-Jin (School of Electrical Engineering, Kunsan National University) ;
  • Park, Jung-Hoon (School of Electrical Engineering, Kunsan National University) ;
  • Son, Kwon-Hee (School of Electrical Engineering, Kunsan National University) ;
  • Kim, Dae-Woon (School of Electrical Engineering, Kunsan National University) ;
  • Lee, Tae-Jae (School of Electrical Engineering, Kunsan National University) ;
  • Lyu, Seung-Chul (School of Electrical Engineering, Kunsan National University) ;
  • Kang, Seung-Youl (Microelectronics Labs., Next Generation Semiconductor Research Dept., ETRI) ;
  • Lee, Jin-Ho (Microelectronics Labs., Next Generation Semiconductor Research Dept., ETRI) ;
  • Park, Hyun-Ki (Flat display Labs., R&D Center, Samsung Display Devices Co.) ;
  • Lee, Chan-Jae (Flat display Labs., R&D Center, Samsung Display Devices Co.) ;
  • You, Jong-Hun (Flat display Labs., R&D Center, Samsung Display Devices Co.)
  • Published : 2000.01.13

Abstract

we have grown vertically aligned carbon nanotubes on a large area of Co-Ni codeposited Si substrates by thermal chemical vapor deposition using $C_2H_2$ gas. The carbon nanotubes grown by the thermal chemical vapor deposition are multi-wall structure, and the wall suface of nanotubes is covered with defective carbons or carbonaceous particles. The carbon nanotubes range from 50 to 120 nm in diameter and about 130 ${\mu}m$ in length at $950\;^{\circ}C$. Steric hindrance between nanotubes at an initial stage of the growth forces nanotubes to align vertically. The turn-on voltage was about 0.8 $V/{\mu}m$ with a current density of 0.1 ${\mu}A/cm^2$ and emission current reveals the Fowler-Nordheim mode.

Keywords