• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1992년도 춘계학술대회 논문집
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• pp.50-53
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• 1992

The GaP crystals are growth by Synthesis Solute Diffusion(SSD) method and its properties are investigated. Etch pits density along vertical direction of ingot is increased from 3.8${\times}$10$^4$cm$\^$-2/ of first freeze to 2.3${\times}$10$\^$5/cm$\^$-2/ of last freeze part. The carrier concentration and mobilities are measured to 197.49$\textrm{cm}^2$/V. sec and 6.75${\times}$10$\^$15/cm$\^$-3/ at room temperature. The temperature dependence of optical energy gap is empilically fitted to E$\_$g/(T)=2.3383-(6.082${\times}$10$\^$-4/T${\times}$/(373.096+T)[eV]. Photo-luminescence spectra measured at low temperature are consist with sharp line-spectra near band-gap energy and radiative recombination between shallow Si-donor to Zn-acceptor and its phonon reprica, and broad emission. The infrared absorption in GaP is cause to phonon coupling modes of TO, LO, LA, TA$_1$, TA$_2$and vibration modes of Ga$_2$O, Si-donor and Zn-acceptor, respectively.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.112-113
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• 2006

A stoichiometric mixture for $Cdln_2Te_4$ single crystal was prepared from horizontal electric furnace. The $Cdln_2Te_4$ single crystal was grown in the three-stage vertical electric furnace by using Bridgman method. The quality of the grown crystal has been investigated by the x-ray diffraction and the photoluminescence measurements. The (001) growth plane of oriented $Cdln_2Te_4$ single crystal was confirmed from back-reflection Laue patterns. The carrier density and mobility of $Cdln_2Te_4$ single crystal measured with Hall effect by van der Pauw method are $8.61{\times}10^{16}\;cm^{-3}$ and $242\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $Cdln_2Te_4$ single crystal obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;1.4750\;eV\;-\;(7.69{\times}\;10^{-3}\;eV)T^2/(T+2147)$.

• 반도체디스플레이기술학회지
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• 제9권3호
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• pp.41-45
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• 2010

The ZnO thin films doped with Ga(GZO) and both Ga and Ge(GZO:Ge) were deposited on glass substrate by using RF sputtering system respectively. Structural, morphological and optical properties of the films deposited in the same condition were investigated. Structural properties of the films were investigated by Field Emission Scanning Electron Microscopy, FE-SEM images and X-ray diffraction, XRD analysis. These studies showed shape of films' surface and direction of film growth respectively. It's showed that all films were deposited by vertical orientation strongly. It can be confirmed that all dopants of targets were included in deposited films by results of EDX analysis. UV-Vis spectrometer results showed that all samples had highly transparent characteristics in visible region and have similar 3.28~3.31 eV band gap. It was found that existence of all dopants by EDX analysis. Morphology and roughness of surface of each film were clearly shown by Atomic Force Microscopy, AFM images. It was found in this research that film doped with Ge more dense and stable with hardly any difference in gap energy compared to ZnO films.

• 한국해안·해양공학회논문집
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• 제34권5호
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• pp.169-175
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• 2022

강 하구나 천해역 등 파랑에 의해 영향을 받는 흐름장에서의 세굴은 한 방향 흐름에서의 세굴에 비해 예측이 어렵다. 해저 교량과 같은 원형 파일 주변부에서의 세굴 예측에 있어서 주요 관심사는 최대 세굴의 깊이와 발생 지점이다. 인접한 원형 파일이 2개 이상인 경우 파일 간의 간격과 정렬 방식에 따라 최대 세굴이 발생하는 위치 및 깊이는 단일 파일일 경우와 많은 차이를 나타낸다. 본 논문은 흐름의 크기를 나타내는 무차원 변수로서 KC 수를 산정하고 파일 간격과 흐름의 크기에 따른 상관성을 분석하였다.

• 대한치과교정학회지
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• 제37권3호
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• pp.192-203
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• 2007

본 연구는 비폐쇄를 보이는 III급 부정교합아동에서, 기도 공간의 형태와 안모 골격 형태 사이의 상관관계를 평가하였다. III급 부정교합을 보이며, 비폐쇄 소견을 보여 이비인후과로 의뢰된 환아 100명의 초진 측모 두부 규격 방사선 사진에서 상 인두기도 공간(upper PAS), 하 인두기도 공간(lower PAS), 편도의 크기, 구개-혀 공간을 측정하여 기도 공간 형태를 분석하였으며, 통상적인 계측점을 사용하여 안면 골격 분석을 시행하여 기도 공간 형태 계측항목과 안면 골격분성 항목간의 상관관계를 연구하여 다음과 같은 결과를 얻었다. Upper PAS는 ramal height, SNA, SNB, PFH, FHR, facial plane angle 항목과 양의 상관관계를 보였으며, saddle angle, articular angle, gonial angle의 sum, SN-GoGn, Y-axis to SN, FMA 항목과 음의 상관관계를 보였다. Lower PAS는 genial angle, FMA와 양의 상관관계를 보였으며, articular angle, facial depth, PFH, FHR와 음의 상관관계를 보였다. 편도의 크기는 PCBL, ramal height, Mn. body length, Mn. body length to ACBL, facial depth, facial length, PFH, AFH와 양의 상관관계를 보였다. 구개-혀 공간은 saddle angle, articular angle, genial angle의 합, facial length, AFH, FMA, LFH와 양의 상관관계를 보였으며, IMPA, overbite와 음의 상관관계를 보였다.

• Earthquakes and Structures
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• 제12권6호
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• pp.699-712
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• 2017

This study evaluates the effectiveness of a newly developed retrofitting scheme for masonry-infilled non-ductile RC frames experimentally and by numerical simulation. The technique focuses on modifying the load path and yield mechanism of the infilled frame to enhance the ductility. A vertical gap between the column and the infill panel was strategically introduced so that no shear force is directly transferred to the column. Steel brackets and small vertical steel members were then provided to transfer the interactive forces between the RC frame and the masonry panel. Wire meshes and high-strength mortar were provided in areas with high stress concentration and in the panel to further reduce damage. Cyclic load tests on a large-scale specimen of a single-bay, single-story, masonry-infilled RC frame were carried out. Based on those tests, the retrofitting scheme provided significant improvement, especially in terms of ductility enhancement. All retrofitted specimens clearly exhibited much better performances than those stipulated in building standards for masonry-infilled structures. A macro-scale computer model based on a diagonal-strut concept was also developed for predicting the global behavior of the retrofitted masonry-infilled frames. This proposed model was effectively used to evaluate the global responses of the test specimens with acceptable accuracy, especially in terms of strength, stiffness and damage condition.

• 조명전기설비학회논문지
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• 제23권5호
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• pp.58-65
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• 2009

전력선이 통과하는 지역에서 발생된 산불은 계통 섬락사고의 원인이 되고 있다. 본 연구에서는 연소화염에 의한 전력선의 절연내력 저하특성을 알아보기 위해 직류 및 교류 전압 인가 시, 연소화염과 고전압 도체의 수평거리(s)를 변화시켰을 때, 수직형 모델 전력선에 대한 섬락특성을 조사하였다. 실험 결과, 수평거리(s)가 작은 범위에서는 화염이 모델선로의 섬락전압을 크게 감소시킬 수 있는 것으로 나타났다. 이러한 섬락전압의 저하요인을 해석하기 위해 화염주변의 상대공기밀도가 고려되었으며, 화염이 존재하는 경우에는 그 영향이 매우 크게 나타남을 알 수 있었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 추계학술대회 논문집
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• pp.207-213
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• 1996

A ternary compound semiconductor $Al_{x}$-Ga/1-x/Sb crystals which have energy gap from 0.7eV to 1.6ev at room temperature with the composition ratio were grown by using the vertical Bridgman method. The characteristics of $Al_{x}$-Ga/1-x/Sb were investigated in this study. The lattice constants of $Al_{x}$-Ga/1-x/Sb crystals with the composition ratio were appeared from 6.096$\AA$ to 6.135$\AA$ with the composition ratio. The electrical properties of the $Al_{x}$-Ga/1-x/Sb crystals measured the Hall effect by van der Pauw method at the magnetic field of 3 kilogauss and at room temperature. The resistivity of Te-doped $Al_{x}$-Ga/1-x/Sb crystals increased from 0.771 $\Omega$-cm to 5 $\Omega$-cm at room temperature with increasing the composition ratio. The mobility of Te-doped $Al_{x}$-Ga/1-x/Sb crystals varied with the composition ratio x, within the following three different regions, such as GaSb-like (0$\leq$x$\leq$0.3), intermediate (0.3$\leq$x$\leq$0.4) and AlSb-like (0.4$\leq$x$\leq$1).eq$1).

• 한국자기학회지
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• 제16권3호
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• pp.178-181
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• 2006

본 연구에선는 수직 Bridgman 법으로 묽은 자성 반도체 $Si_{1-x}Mn_xTe_{1.5} $ 단결정을 성장시켜 Mn의 조성비 변화에 따른 광학적, 전지적, 그리고 자기적 특성을 조사하였다. X-선 회절 실험으로부터 육방정계(hexagonal) 구조임을 확인하였다. 광흡수 측정으로부터 에너지 띠 간격은 조성비 x와 온도 증가에 대하여 감소함을 보였다. 성장시킨 시료의 경우 강자성 특성을 나타내었으며, Curie 온도는 80K 이상이었다. Mn의 조성비가 증가함에 따라 평균 자기 모멘트와 보자력 값은 증가하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.481-484
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• 1999

The undoped-InSe and Sn-doped InSe single crystals were grown by vertical Bridgman method and their properties were invesigated. These crystals were obtained by lowering the quartz ampoule for growth in the furnace and growth rate at optimum condition is 0.4mm/hr. The orientations and the crystallinites of these crystals were identified by X-ray diffraction(XRD), double crystal rocking curve(DCRC) and etch-pit density(EPD) measurements. From the Raman spectrum at room temperature, TO, LO modes together with their overtones and combinations were observed. Optical properties were investigated by photoluminescence at 12K and direct band gap of these crystals obtained from optical absorption spectrum. Compared with undoped-lnSe, electrical properties of Sn-doped InSe were increased and the electrical conductivity type were n-type. But electrical properties along growth direction of crystals and radial direction of wafer showed nearly uniform distribution.