• Title/Summary/Keyword: Varistor characteristics

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A Study on the Microstructure and Electrical Properties of ZnO:Pr Varistor with $Y_2O_3$Additive ($Y_2O_3$ 첨가에 따른 ZnO:Pr 바리스터의 미세구조 및 전기적 특성에 관한 연구)

  • 남춘우;정순철;이외천
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.11 no.1
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    • pp.48-56
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    • 1998
  • Pr\ulcornerO\ulcorner-based ZnO varistors were fabricated in the range of $Y_2$O$_3$additive content from 0.5 to 4.0mol%, and its microstructure and electrical properties were investigated. Yttrium was distributed nearly in the grain boundaries and the cluster phase formed at nodal point but more in cluster phase. The average grain size was decreased markedly from 34.9 to 8.6${\mu}{\textrm}{m}$ with increasing $Y_2$O$_3$additive content. It is believed that the decrease of grain size is attributed to the formation of cluster phase and the weakening of driving force for liquid sintering. As a result, $Y_2$O$_3$was acted as the inhibitor of the grain growth. With increasing $Y_2$O$_3$additive content, the varistor voltage, the activation energy, and the nonlinear exponent increased whereas the leakage current decreased, especially 4.0mol% $Y_2$O$_3$-added varistor exhibited very good I-V characteristics; nonlinear exponent 87.42 and leakage current 46.77nA. On the other hand, as $Y_2$O$_3$additive content increases, the varistor showed tendency of the salient decrease for donor concentration and the increase for barrier height. Conclusively, it is estimated that ZnO:Pr varistor compositions added more than 2.0mol% $Y_2$O$_3$are to be used to fabricate useful varistors.

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Development of class I surge protection device for the protection of offshore wind turbines from direct lightning (해상풍력발전기 직격뢰 보호용 1등급 바리스터 개발)

  • Geon Hui Lee;Jae Hyun Park;Kyung Jin Jung;Sung-Man Kang;Seung-Kyu Choi;Jeong Min Woo
    • Journal of Wind Energy
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    • v.14 no.4
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    • pp.50-56
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    • 2023
  • With the abnormal weather phenomena caused by global warming, the frequency and intensity of lightning strikes are increasing, and lightning accidents are becoming one of the biggest causes of failures and accidents in offshore wind turbines. In order to secure generator operation reliability, effective and practical measures are needed to reduce lightning damage. Because offshore wind turbines are tall structures installed at sea, the possibility of direct lightning strikes is very high compared to other structures, and the role of surge protection devices to minimize damage to the electrical and electronic circuits inside the wind turbine is very important. In this study, a varistor, which is a key element for a class 1 surge protection device for direct lightning protection, was developed. The current density was improved by changing the varistor composition, and the distance between the electrode located on the varistor surface and the edge of the varistor was optimized through a simulation program to improve the fabrication process. Considering the combined effects of heat distribution, electric field distribution, and current density on the optimized varistor surface, silver electrodes were formed with a gap of 0.5 mm. The varistor developed in this study was confirmed to have an energy tolerance of 10/350 ㎲, 50kA, which is a representative direct lightning current waveform, and good protection characteristics with a limiting voltage of 2 kV or less.

The R-V Characteristics of $SiO_2 $ & $SiO_2/TiN$ Thin Film Fabricated by RF Sputtering (RF Sputtering으로 제작한 $SiO_2 $$SiO_2/TiN$ 박막의 R-V 특성)

  • 김창석;하충기;김병인
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.11 no.10
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    • pp.826-832
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    • 1998
  • In this study the thin films with the structure of Si+SiO$_2$+TiN are made by RF supttering method. TiN, which has small diffusion coefficient and low resistivity, is evaporated between SiO$_2$ and Al layers. It investigates the V-R characteristics depending on the thickness of SiO$_2$ which is used as insulation layer and researches its effects on voltage stability of thin film and varistor. These films show very small resistance valus in negative(-) voltage and large and large value in positive voltage band, and with the increase of voltage, resistance value is rapidly reduced and the satisfactory characteristic of varistor is shown at +1[V]. It is found that resistance value of TiN thin film is small and also TiN thin film has more current than the thin film which is not evaporated by TiN thin film. When Al electrode is evaporated of SiO$_2$ thin film, spiking occurs, but the spiking can be prevented with evaporation of TiN between SiO$_2$ and Al layers and this thin films in made easily because of its good attachment. With the increase of voltage, the resistance is changed into non-linear pattern and the bidirectional varistor characteristic is shown and then its theory can be verified by this experiment. Accordingly, when TiN is evaporated of Si Wafer(n-100), it obtains better voltage-resistance than thin film which is not evaporated and also when varistor character is used electrically to automatic control element such as elimination of flame, power distribution arrestor and constant voltage compensation, satisfactory reproducibilities are expected.

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Conduction Characteristics of $Pr_6O_{11}$-Based ZnO Varistor Added with Samarium Oxides (사마륨 옥사이드가 첨가된 $Pr_6O_{11}$계 ZnO 바리스터의 전도특성)

  • Yoon, Han-Soo;Park, Choon-Hyun;Nahm, Choon-Woo
    • Proceedings of the KIEE Conference
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    • 1999.07d
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    • pp.1689-1691
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    • 1999
  • The conduction characteristics of $Pr_6O_{11}$-based ZnO varistor were investigated. ZnO-$Pr_6O_{11}$-CoO-$Sm_2O_3$-based ZnO varistor were sintered at $1300^{\circ}C$ and $1350^{\circ}C$ in the addition range $0.0\sim2.0mol%$ $Sm_2O_3$, respectively. ZnO varistors which are added with 1.0mol% at each temperature exhibited best excellent conduction characteristics, namely the nonlinear exponent was 42.05 at $1300^{\circ}C$, 36.79 at $1350^{\circ}C$ and leakage current was $9.16{\mu}A$ at $1300^{\circ}C$, $11.7{\mu}A$ at $1350^{\circ}C$. Consequently, it is estimated that ZnO-$Pr_6O_{11}$-CoO-$Sm_2O_3$-based ZnO varistors, which $Sm_2O_3$ is added 1.0mol% is to be used as a basic composition of $Pr_6O_{11}$-based ZnO varistors.

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Study on Surge Absorption Capability for Power Arrester with MOV Micro-milling Characteristics (전력용 피뢰기의 MOV 미립화와 에너지 내량 특성 연구)

  • Han, Se-Won;Cho, Han-Goo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.05b
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    • pp.120-124
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    • 2004
  • The protection performance and energy absorption capability are important for both MOAs for distribution lines and MOAs for high voltage systems, therefore the manufacturing technique of ZnO varistor elements with high ability against surge impacts is great important for high voltage systems. But until now ZnO varistors for low voltage class have been developed in Korea, ZnO varistors with the rate discharge current of 5, 10kA class for high voltage systems depend on an import from advanced countries, such as Japan or U.S.A, which have developed its in the late 1980s. So in the aspect of taking independent technique the development of ZnO varistors with the rate discharge current of 5, 10kA class for high voltage systems is important. In this research project ZnO varistor elements with diameters of 35mm and 70mm for the rate discharge current of 5, 10kA class for high voltage systems are manufactured, then various chemical composition and processing variables affected the electrical and the physical characteristics of these ZnO varistors are investigated.

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Influence of Dy2O3 Addition on Microstructure and Electrical Properties of Pr6O11 Varistor Ceramics (Pr6O11계 ZnO 바리스터 세라믹스의 미세구조 및 전기적 특성에 미치는 Dy2O3첨가의 영향)

  • Nahm, Choon-Woo;Park, Jong-Ah
    • Korean Journal of Materials Research
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    • v.13 no.10
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    • pp.645-650
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    • 2003
  • The microstructure and electrical characteristics of $Pr_{6}$ $O_{11}$ -based ZnO varistor ceramics composed of $ZnO-Pr_{6}$ $O_{ 11}$/$-CoO-Cr_2$$O_3$-$Dy_2$$O_3$-based ceramics were investigated with $Dy_2$$O_3$content in the range of 0.0∼2.0 mol%. As $Dy_2$$O_3$content was increased, the average grain size was decreased in the range of 18.6∼4.7 $\mu\textrm{m}$ and the density of the ceramic was decreased in the range of 5.53∼4.34 g/㎤. While, the varistor voltage was increased in the range of 39.4∼436.6 V/mm and the nonlinear exponent was in the range of 4.5∼66.6 with increasing $Dy_2$$O_3$content. The addition of $Dy_2$$O_3$highly enhanced the nonlinear properties of varistors, compared with the varistor without $Dy_2$$O_3$. In particular, the varistor with $Dy_2$$O_3$ content of 0.5 mol% exhibited the highest nonlinearity, in which the nonlinear exponent is 66.6 and the leakage current is 1.2 $\mu\textrm{A}$. The donor concentration and the density of interface states were decreased in the range of $(4.19∼0.33) ${\times}$10^{18}$ //㎤ and $(5.38∼1.74) ${\times}$10^{12}$ $\textrm{cm}^2$, respectively, with increasing $Dy_2$$O_3$content. The minimum dissipation factor of 0.0302 was obtained from 0.5mol% $Dy_2$$O_3$.

Effect of Firing Temperature on Microstructure and the Electrical Properties of a ZnO-based Multilayered Chip Type Varistor(MLV) (소성온도에 따른 ZnO계 적층형 칩 바리스터의 미세구조와 전기적 특성의 변화)

  • Kim, Chul-Hong;Kim, Jin-Ho
    • Journal of the Korean Ceramic Society
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    • v.39 no.3
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    • pp.286-293
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    • 2002
  • Microstructure and the electrical porperties of a ZnO-based multilayered chip-type varistor(abbreviated as MLV) with Ag/Pd(7:3) inner electrode have been studied as a function of firing of temperature. At 1100$^{\circ}$C, inner electrode layers began to show nonuniform thickness and small voids, which resulted in significant disappearance of the electrode pattern and delamination at 1100$^{\circ}$C. MLVs fired at 950$^{\circ}$C showed large degradation in leakage current, probably due to incomplete redistribution of liquid and transition metal elements in pyrochlore phase decomposition. Those fired at 1100$^{\circ}$C and above, on the other hand, revealed poor varistor characteristics and their reproductibility, which are though to stem from the deformation of inner electrode pattern, the reaction between electrode materials and ZnO-based ceramics, and the volatilization of $Bi_2O_3$. Throughout the firing temperature range of 950∼1100$^{\circ}$C, capacitance and leakage current increased while breakdown voltage and peak current decreased with the increase of firing temperature, but nonlinear coefficient and clamping ratio kept almost constant at ∼30 and 1.4, respectively. In particular, those fired between 1000$^{\circ}$C and 1050$^{\circ}$C showed stable varistor characteristics with high reproducibility. It seems that Ag/Pd(7:3) alloy is one of the electrode materials applicable to most ZnO-based MLVs incorporating with $Bi_2O_3$ when cofired up to 1050$^{\circ}$C.

Electrical Characteristics of ZnO Varistor for Transmission Class Arrester (송전급 피뢰기용 ZnO 바리스터 소자의 전기적 특성)

  • Kim, Seok-Sou;Park, Choon-Hyun;Cho, I-Gon;Park, Tae-Gon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.04b
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    • pp.179-182
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    • 2004
  • ZnO varistor for transmission class arrester$({\Phi}65{\times}20mm)$ of 10kA(Class 3) grade was recently developed in korea and is tested for the properties by switching surge operating duty test to know the line discharge class and complex surge property in electric properties. To find out changing rate of residual voltage before and after lightning impulse residual voltage testing, the sample is cool to room temperature after finishing switching surge operating duty test, and the rate is good as 1.0~1.7%. The element had been considered as applicable ZnO varistor for electricity transmission from the test results of state conterl, switching surge operating duty, thermal stability and above test. But various test should be required for actual application because this is a part of the to be needed for application.

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A Study on the Degradation Mechanism of ZnO Ceramic Varistor Manufactured by Ambient Sintering-Process (분위기 소결공정에 의해 제조된 ZnO 세라믹 바리스터의 열화기구 연구)

  • 소순진;김영진;박춘배
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.13 no.5
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    • pp.383-389
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    • 2000
  • The relationship between the DC degradation characteristics of the ZnO varistor and the ambient sintering-process is investigated in this study. ZnO varistors made o matsuoka’s composition were fabricated by standard ceramic techniques. The ambient sintering-process is performed at the extraordinary electrical-furnace which is equipped with the vacuum system. Gases used in sintering process were oxygen nitrogen argon and air. Using XRD and SEM the phase and microstructure of samples were analyzed respectively. The conditions of DC degradation tests were conducted at 115$\pm$2$^{\circ}C$ for 13 h. Current-voltage analysis is used to determine nonlinear coefficients($\alpha$). Frequency analysis are performed to understand electrical properties as DC degradation test. From above analysis it is found that the ZnO varistor sintered in oxygen atmosphere showed superior properties at the DC degradation test and degradation phenomenon of ZnO varistor is caused by the change of electrical properties in grain boundary. These results are in accordance with Gupta’s degradation model.

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A Method for Enhancing Data Transmission Performance in the Power-Line Communication Channel with Low-Voltage Surge Protective Devices (저압용 SPD가 설치된 전력선통신에서 데이터전송 성능 향상)

  • Choi, Jong-Min;Jeon, Tae-Hyun
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.26 no.2
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    • pp.78-85
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    • 2012
  • Low-Voltage power lines should equip surge protection devices which protect electronic equipments and human lives against lightning and abnormal voltages. Data transmission capacity of the power line is determined by frequency characteristics of the surge protective devices. To analyze the effects of surge protective devices on the data transmission performance, various combinations of installation methods are tested which include ZnO varistor elements that is compatible with class I, class II and class III. The result claims that ZnO varistor for class III is found to be one of the main factors that deteriorates the transmission performance. To overcome this problem a serial connection methed between Gap type SPD and ZnO varistor is proposed. With the proposed scheme, laboratory experimental results show that the data transmission performance can be improved up to 91.9[%] with proper SPD combination.