• Membrane Journal
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• v.33 no.5
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• pp.248-256
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• 2023

Indium tin oxide (ITO) transparent electrode film has been widely adopted for the various applications such as display and electric vehicle. In this paper, we studied how to enhance the thermoforming stability of ITO film by applying the highly conductive Poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) thin layer. Based on the change of sheet resistance value, the influence of the additional solvent with different boiling point was investigated for the PEDOT:PSS coating solution. In addition, by analyzing optical transmittance and Raman spectrum, we confirmed the key mechanism which determine the final electrical conductivity of the PEDOT:PSS on ITO film using an ethylene glycol solvent. The final ITO transparent electrode coated with PEDOT:PSS performed the outstanding endurance of electrical conduction even in 126% stretching condition.

• FOCUS: LIFE SCIENCE
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• no.1
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• pp.2.1-2.6
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• 2024

This article provides detailed instructions for the correct installation, maintenance, and troubleshooting of capillary gas chromatography (GC) columns. It emphasizes the importance of proper installation to ensure optimal performance and longevity of the column. The document covers various aspects such as column trimming, installation, conditioning, testing, storage, and ferrule selection. The installation process involves ensuring that the heated zones of the GC are cool before placing the column cage in the column oven. It is essential to avoid sharp bends or stress on the capillary column during installation and to connect the front end of the column into the GC inlet at the recommended insertion distance. The document also provides guidance on trimming the column, including the use of a ceramic wafer or capillary column cutter to achieve a clean, burr-free cut. For previously used columns, it recommends removing any capillary caps, positioning the nut and ferrule, and trimming 1-2 cm from the column. After installation, the column should be purged with carrier gas to remove any oxygen and avoid oxidizing the column. Conditioning the column involves ramping to the upper isothermal temperature limit and maintaining this temperature for a specified duration. It is crucial to maintain carrier gas flow during conditioning and not exceed the upper temperature limit of the column to avoid phase damage. The document also discusses testing column performance using a suitable method and performing a test injection to assess performance. It provides recommendations for column storage, including flame-sealing the capillary ends or using retention gaps for long-term storage. Additionally, it emphasizes the importance of routine maintenance and replacement of GC consumables to extend the column's lifetime. Ferrule selection is another important aspect covered in the article, with a variety of ferrule materials available for different applications. The characteristics of common ferrule options are presented in a table, including temperature limits, reusability, and suitability for specific detector types.

• Journal of Biomedical Engineering Research
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• v.19 no.6
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• pp.617-622
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• 1998

A cryotherapy system using cold air was developed. The developed system had superior low-temperature characteristics with various flow rates and nozzle sizes, and used R-404A, as a coolant, which has no destructive effects of Ozone layers. Flow rates and the treatment time can be easily altered during the operation. In addition, and alarm system was designed for the overload, overheat, and over-charge of the machine. For clinical applications, skin temperatures, intra-articular temperatures of the knee joint and intra-muscluar temperatures of the gluteal muscles were measured during and after the cryotherapy. After a 5-minute therapy, skin and intra-articular temperatures decreased by $23.3{\pm}4.7 and 4.1 {\pm}1.0^{circ}C$, respectively. A 5-minute cryotherapy was good enough to maintain low intra-articular temperatures for 2-3 hours. Resting intra-muscular temperatures in 2, 4, and 6cm deep in the gluteal muscle were $36.5{\pm}1.2, 36.9{\pm}0.2, 37.1{\pm}0.2^{circ}C$, respectively (p<0.05). Lowest temperatures in 2, 4, and 6cm depth were $35.1{\pm}0.7, 36.2{\pm}0.4, 36.9{\pm}0.3^{circ}C$, respectively (p<0.05). Temperatures after a 2-hour cold air application on the skin and in the muscle in dept도 of 2, 4, and 6cm were $32.2{\pm}1.1, 36.2{\pm}0.5, 36.6{\pm}0.3, 36.9{\pm}0.3^{circ}C$respectively (p<0.05). Temperatures on the skin and in the muscle significantly decreased after 2 hours, compared with before cold air application (p<0.05). The intra-muscular temperature was changed more slowly than the skin temperature, and the deeper the muscle, the lesser temperature changes. The effect of a 5-minute cold air application lasts up to 2 hours, and it seems that the rebound-rise of the temperature dut to the reactive vasodilatation does not occur in the gluteal muscle.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.113-114
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• 2009

Silicon carbide is one of the most attractive and promising wide band-gap semiconductor material with excellent physical properties and huge potential for electronic applications. Up to now, the most successful method for growth of large SiC crystals with high quality is the physical vapor transport (PVT) method [1, 2]. Since further reduction of defect densities in larger crystal are needed for the true implementation of SiC devices, many researchers are focusing to improve the quality of SiC single crystal through the process modifications for SiC bulk growth or new material implementations [3, 4]. It is well known that for getting high quality SiC crystal, source materials with high purity must be used in PVT method. Among various source materials in PVT method, a SiC powder is considered to take an important role because it would influence on crystal quality of SiC crystal as well as optimum temperature of single crystal growth, the growth rate and doping characteristics. In reality, the effect of powder on SiC crystal could definitely exhibit the complicated correlation. Therefore, the present research was focused to investigate the quality difference of SiC crystal grown by conventional PVT method with using various SiC powders. As shown in Fig. 1, we used three SiC powders with different particles size. The 6H-SiC crystals were grown by conventional PVT process and the SiC seeds and the high purity SiC source materials are placed on opposite side in a sealed graphite crucible which is surrounded by graphite insulation[5, 6]. The bulk SiC crystal was grown at $2300^{\circ}C$ of the growth temperature and 50mbar of an argon pressure. The axial thermal gradient across the SiC crystal during the growth is estimated in the range of $15\sim20^{\circ}C/cm$. The chemical etch in molten KOH maintained at $450^{\circ}C$ for 10 min was used for defect observation with a polarizing microscope in Nomarski mode. Electrical properties of bulk SiC materials were measured by Hall effect using van der Pauw geometry and a UV/VIS spectrophotometer. Fig. 2 shows optical photographs of SiC crystal ingot grown by PVT method and Table 1 shows electrical properties of SiC crystals. The electrical properties as well as crystal quality of SiC crystals were systematically investigated.

• Journal of the Korean Chemical Society
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• v.29 no.5
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• pp.472-477
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• 1985

The rates for the aquation of $cis-[Co(en)(NH_3)_2Cl_2]Cl in acetone-water mixtures have been measured at various pressures and temperatures by the electric conductivity method. The rate constant measured at 25$^{\circ}$C in pure water solvent is 3.47 ${\times}10^{-4}$/sec. Rate constants are increased with increasing temperature, and decreased with increasing pressure and mole fraction of acetone. Activation volumes and other activation parameters are calculated from these rate constants. The activation volumes are all positive and lie in the limited range +2.82~+$8.2cm^3$/mole. The rate constants in aqueous acetone solution are analyzed with the solvent compositions. Plots of log $k_{obs}$ vs. Grunwald-Winstein Y values show that log $k_{obs}$ varies linearly and the gradients are about 0.25. The applications of a free energy cycle relating the process initial state ${\to}$ transition state in water to that in acetone-water mixture show that the changes in solvation of the transition state have a dominant effect on the rate. From these results the aquation of this complex would be discussed in terms of dissociative mechanism ($I_d$).

• Maxillofacial Plastic and Reconstructive Surgery
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• v.38
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• pp.48.1-48.8
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• 2016

Background: This study investigates the effect of alendronate-treated osteoblasts, as well as the effect of low-level laser therapy (LLLT) on the alendronate-treated osteoblasts. Bisphosphonate decreases the osteoblastic activity. Various treatment modalities are used to enhance the bisphosphonate-treated osteoblasts; however, there were no cell culture studies conducted using a low-level laser. Methods: Human fetal osteoblastic (hFOB 1.19) cells were treated with $50{\mu}M$ alendronate. Then, they were irradiated with a $1.2J/cm^2$ low-level Ga-Al-As laser (${\lambda}=808{\pm}3nm$, 80 mW, and 80 mA; spot size, $1 cm^2$; NDLux, Seoul, Korea). The cell survivability was measured with the MTT assay. The three cytokines of osteoblasts, receptor activator of nuclear factor ${\kappa}B$ ligand (RANKL), osteoprotegerin (OPG), and macrophage colony-stimulating factor (M-CSF) were analyzed. Results: In the cells treated with alendronate at concentrations of $50{\mu}M$ and higher, cell survivability significantly decreased after 48 h (p < 0.05). After the applications of low-level laser on alendronate-treated cells, cell survivability significantly increased at 72 h (p < 0.05). The expressions of OPG, RANKL, and M-CSF have decreased via the alendronate. The RANKL and M-CSF expressions have increased, but the OPG was not significantly affected by the LLLT. Conclusions: The LLLT does not affect the OPG expression in the hFOB cell line, but it may increase the RANKL and M-CSF expressions, thereby resulting in positive effects on osteoclastogenesis and bone remodeling.

• Korean Journal of Materials Research
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• v.20 no.11
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• pp.606-610
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• 2010

Films consisting of a silicon quantum dot superlattice were fabricated by alternating deposition of silicon rich silicon nitride and $Si_3N_4$ layers using an rf magnetron co-sputtering system. In order to use the silicon quantum dot super lattice structure for third generation multi junction solar cell applications, it is important to control the dot size. Moreover, silicon quantum dots have to be in a regularly spaced array in the dielectric matrix material for in order to allow for effective carrier transport. In this study, therefore, we fabricated silicon quantum dot superlattice films under various conditions and investigated crystallization behavior of the silicon quantum dot super lattice structure. Fourier transform infrared spectroscopy (FTIR) spectra showed an increased intensity of the $840\;cm^{-1}$ peak with increasing annealing temperature due to the increase in the number of Si-N bonds. A more conspicuous characteristic of this process is the increased intensity of the $1100\;cm^{-1}$ peak. This peak was attributed to annealing induced reordering in the films that led to increased Si-$N_4$ bonding. X-ray photoelectron spectroscopy (XPS) analysis showed that peak position was shifted to higher bonding energy as silicon 2p bonding energy changed. This transition is related to the formation of silicon quantum dots. Transmission electron microscopy (TEM) and electron spin resonance (ESR) analysis also confirmed the formation of silicon quantum dots. This study revealed that post annealing at $1100^{\circ}C$ for at least one hour is necessary to precipitate the silicon quantum dots in the $SiN_x$ matrix.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.11-11
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• 2008

ZnO has a very large exciton binding energy (60 meV) as well as thermal and chemical stability, which are expected to allow efficient excitonic emission, even at room temperature. ZnO based electronic devices have attracted increasing interest as the backplanes for applications in the next-generation displays, such as active-matrix liquid crystal displays (AMLCDs) and active-matrix organic light emitting diodes (AMOLEDs), and in solid state lighting systems as a substitution for GaN based light emitting diodes (LEDs). Most of these electronic devices employ the electrical behavior of n-type semiconducting active oxides due to the difficulty in obtaining a p-type film with long-term stability and high performance. p-type ZnO films can be produced by substituting group V elements (N, P, and As) for the O sites or group I elements (Li, Na, and K) for Zn sites. However, the achievement of p-type ZnO is a difficult task due to self-compensation induced from intrinsic donor defects, such as O vacancies (Vo) and Zn interstitials ($Zn_i$), or an unintentional extrinsic donor such as H. Phosphorus (P) doped ZnO thin films were grown on c-sapphire substrates by radio frequency magnetron sputtering with various Ar/ $O_2$ gas ratios. Control of the electrical types in the P-doped ZnO films was achieved by varying the gas ratio with out post-annealing. The P-doped ZnO films grown at a Ar/ $O_2$ ratio of 3/1 showed p-type conductivity with a hole concentration and hole mobility of $10^{-17}cm^{-3}$ and $2.5cm^2/V{\cdot}s$, respectively. X-ray diffraction showed that the ZnO (0002) peak shifted to lower angle due to the positioning of $p^{3-}$ ions with a smaller ionic radius in the $O^{2-}$ sites. This indicates that a p-type mechanism was due to the substitutional Po. The low-temperature photoluminescence of the p-type ZnO films showed p-type related neutral acceptor-bound exciton emission. The p-ZnO/n-Si heterojunction LEO showed typical rectification behavior, which confirmed the p-type characteristics of the ZnO films in the as-deposited status, despite the deep-level related electroluminescence emission.

• Asian Journal of Turfgrass Science
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• v.23 no.1
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• pp.123-132
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• 2009

This study was designed to investigate the effect of the late fall fertilization applied with methyl urea(MU), compound chemical fertilizer(CF), humate(HM), and organic compost fertilizer(NS) on spring greenup of creeping bentgrass at following year. The plots were treated with various snow cover periods before transforming to ski slopes from golf holes during 2007 fall to 2008 spring. The highest visual quality and greenup rate were shown on MU or HM applications at 10 days before snow cover treatment. The CF treatment which had a highest phosphorus rate was most effective with a 13 cm of root length at the reconversion date to golf hole from ski slope of the following spring. However, the application of CF followed by immediate snow cover showed the worst results on visual quality and green color caused by a leaf burning damage from the residual effect of CF. At least 10 days were required to avoid phytotoxicant from undissolved granular of CF before snow cover practise. The application of NS showed the highest result on leaf dry weight at no snow cover plot in next spring, but not on green color and visual quality. Therefore, the proper interval period of snow cover after late fall fertilization should be an important management skill on the spring greenup of creeping bentgrass on following year transforming from ski slope to golf hole.

• Journal of Internet Computing and Services
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• v.11 no.2
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• pp.61-72
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• 2010

This paper addresses the problem of moving object localization using Ultra-Wide-Band(UWB) range measurement and the method of location accuracy improvement of the indoor moving object. Unlike outdoor environment, it is difficult to track moving object position due to various noises in indoor. UWB is a radio technology that has attention for localization applications recently. UWB's ranging technique offer the cm accuracy. Its capabilities for data transmission, range accurate estimation and material penetration are suitable technology for indoor positioning application. This paper propose a positioning algorithm of an moving object using UWB ranging technique and particle filter. Existing positioning algorithms eliminate estimation errors and bias after location estimation of mobile object. But in this paper, the proposed algorithm is that eliminate predictable UWB range distance error first and then estimate the moving object's position. This paper shows that the proposed positioning algorithm is more accurate than existing location algorithms through experiments. In this study, the position of moving object is estimated after the triangulation and eliminating the bias and the ranging error from estimation range between three fixed known anchors and a mobile object using UWB. Finally, a particle filter is used to improve on accuracy of mobile object positioning. The results of experiment show that the proposed localization scheme is more precise under the indoor.