• Bulletin of the Korean Chemical Society
• /
• 제28권12호
• /
• pp.2405-2408
• /
• 2007

Oxidation of alkylaromatics including toluene and p-methoxytoluene has been carried out over alkali metal (AM)-containing catalysts such as AM-V/TiO2 and AM-VSb/Al2O3 in vapor-phase using oxygen as an oxidant. The selectivity for partial oxidations increases with incorporation of an alkali metal or with increasing the basicity of alkali metals (from Na to Cs), irrespective of the supports or reactants. However, the conversion is nearly constant or slightly decreasing with the addition of alkali metals in the catalyst. The increased selectivity may be related with the decreased acidity even though more detailed work is necessary to understand the effect of alkali metals in the oxidation. The AM-VSb/Al2O3 may be suggested as a potential selective catalyst for vapor-phase oxidations.

• 한국세라믹학회지
• /
• 제34권12호
• /
• pp.1199-1204
• /
• 1997

SiC conversion layer was fabricated by the chemical vapor reaction between graphite substrate and silica powder. The CVR process was carried out in nitrogen atmosphere at 175$0^{\circ}C$ and 185$0^{\circ}C$. From the reduction of silica powder with graphite substrate, the SiO vapor was created, infiltrated into the graphite substrate, then, the SiC conversion layer was formed from the vapor-solid reaction of SiO and graphite. In the XRD pattern of conversion layer, it was confirmed that 3C $\beta$-SiC phase was created at 175$0^{\circ}C$ and 185$0^{\circ}C$. Also, in the back scattered image of cross-sectional conversion layer, it was found that the conversion layer was easily formed at 185$0^{\circ}C$, the interface of graphite substrate and SiC layer was observed. It was though that the coke particle size and density of graphite substrate mainly affect the XRD pattern and microstructure of SiC conversion layer. In the oxidation test of 100$0^{\circ}C$, the SiC converted graphites exhibited good oxidation resistance compared with the unconverted graphites.

• 한국표면공학회지
• /
• 제39권4호
• /
• pp.147-152
• /
• 2006

Failure mechanisms of electron beam physical vapor deposited thermal barrier coatings(EB-PVD TBCs) that occur during thermal cyclic oxidation were investigated. The investigations include microstructural degradation of NiCrAIY bond coat, thermally grown oxides(TGOs) along the ceramic top coat-substrate interface and fracture path within TBCs. The microstructural degradation of the bond coat during cyclic oxidation created Al depleted zones, resulting in reduction of NiAl and ${\gamma}$-Ni solid solution phase. It was observed that the fracture took placed primarily within the TGOs or at the interfaces between TGOs and bond coat.

• 한국대기환경학회지
• /
• 제17권1호
• /
• pp.57-66
• /
• 2001

Gas phase photocatalytic oxidation of tetrachloroethylene (PCE) under 370 nm ultra-violet irradiation was investigated with TiO$_2$ catalyst. During the photocatalytic oxidation of PCE vapor several kinds of intermediate were produced, and the reaction pathways were proposed on the basis of the production sequency of the intermediates. The intermediates in the pathways of PCE oxidation were hexachloroethane, pentachlotoethane, 1, 1, 2-trichloroethane, carbon tetrachl-oride, dichloroacetylchloride, chloroform, 1,1-dichloroethane, phosgene, CO, $CO_2$, HCl, Cl$_2$.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
• /
• pp.384-384
• /
• 2012

We report nonvolatile memory properties of poly (3, 4-ethylenedioxythiophene) (PEDOT) thin films grown by vapor phase polymerization using FeCl3 as an oxidant. Liquid-bridge-mediated transfer method was employed to remove FeCl3 for generation of pure PEDOT thin films. From the electrical measurement of memory device, we observed voltage induced bipolar resistive switching behavior with ON/OFF ratio of 103 and reproducibility of more than 103 dc sweeping cycles. ON and OFF states were stable up to 104 seconds without significant degradation. Cyclic voltammetry data illustrates resistive switching effect can be attributed to formation and rupture of conducting paths due to oxidation and reduction of PEDOT. The maximum current before reset process was found to be increase linearly with increase in compliance current applied during set process.

• 한국결정성장학회:학술대회논문집
• /
• 한국결정성장학회 1997년도 Proceedings of the 12th KACG Technical Meeting and the 4th Korea-Japan EMGS (Electronic Materials Growth Symposium)
• /
• pp.79-85
• /
• 1997

Fe$_2$O$_3$ thin films were prepared on $Al_2$O$_3$ substrate by PECVD(Plasma-Enhanced Chemical Vapor Deposition) process. The phase transformation of iron oxide film was determined as the substrate temperature and reduction-oxidation process. $\alpha$-Fe$_2$O$_3$ was stable in deposition temperature ranges of 80~15$0^{\circ}C$. Fe$_3$O$_4$ phase was obtained by the reduction process of $\alpha$-Fe$_2$O$_3$ phase in H$_2$ ambient. Fe$_3$O$_4$ phase was transformed into a ${\gamma}$-Fe$_2$O$_3$ thin film under controlled oxidation conditions at 280~30$0^{\circ}C$.

• 한국세라믹학회지
• /
• 제35권11호
• /
• pp.1190-1196
• /
• 1998

Ultrafine ${\beta}$-SiC powders were synthesized by the vapor phase reaction of TMS[Si(CH3)4] in hydrogen The reaction temperature and TMS concentration were varied from 1000 to 1400$^{\circ}C$ and from 1 to 10% respectively. The average particle size and phase of the powders were analyzed by TEM and XRD. Ultrafine ${\beta}$-SiC powders were synthesized above 1000$^{\circ}C$ and the crystallinity of the powders increased with increasing reaction temperature. Shape of the particles were spherical and had average size of about 20 nm which showed no difference as the reaction temperature and TMS concentration increased. From the FT-IR analysis the absorption bands of Si-C of the powders shifted to higher wavenumber as the reaction temperature increased,. Under the condition of total gas flow above 1500cc/min ${\beta}$-SiC and poly-Si powders were obtained simultaneously. The Si-O bond intensity was increased under the condition of total gas flow rate above 1000cc/min which might be due to oxidation formed on poly-Si.

• Bulletin of the Korean Chemical Society
• /
• 제31권8호
• /
• pp.2413-2415
• /
• 2010

• Bulletin of the Korean Chemical Society
• /
• 제26권8호
• /
• pp.1214-1218
• /
• 2005

Ti-HMS samples in which titanium species exist in various forms of isolated tetrahedral state, finely dispersed $TiO_2$ cluster, and some in extra-framework anatase phase were prepared via a direct synthesis route using dodecylamine (DDS) as a structure directing agent by systematically varying the titanium loadings between 2 and 50 mol% Ti/(Ti+Si) in substrate composition. Physicochemical properties of the materials were evaluated using XRD, SEM/TEM, N2 adsorption, UV-vis and XANES spectroscopies. Catalytic properties of Ti-HMS in cyclohexene and 2,6-di-tert-butyl phenol (2,6-DTBP) oxidation using aqueous $H_2O_2$, and vapor phase photocatalytic degradation of acetaldehyde were evaluated. High $H_2O_2$ selectivity was obtained in cyclohexene oxidation, and cyclohexene conversion was found primarily dependent on the amount of tetrahedrally coordinated Ti sites. For bulky 2,6-DTBP oxidation and photocatalytic oxidation of acetaldehyde, on the other hand, conversions were found dependent on the total amount of Ti sites and maintaining an uniform mesoporous structure in the catalysts was not critical for efficient catalysis.

• Composites Research
• /
• 제26권5호
• /
• pp.322-327
• /
• 2013

탄소섬유강화 SiC기지상 복합재는 우수한 산화저항성과 우수한 열충격저항성을 가진다. 그리고 이런 특성들은 탄소섬유강화복합재가 고온구조재로서 응용케하였다. 본 연구에서는 $C_f/SiC$ 복합재가 전구체 함침과 액상 함침이 동반된 열분해공정, Cyclohexene을 사용한 화학기상 경화공정을 통해 제조되었다. 최종 제조된 $C_f/SiC$ 복합재는 5회 함침을 통해 $0.43g/cm^3$ 밀도를 갖는 탄소섬유 프리폼에서 $1.76g/cm^3$의 밀도값을 나타내고 있다. 그리고 산화저항성 특성면에서 $C_f/SiC$ 복합재의 무게가 공기중 $1400^{\circ}C$에서 6시간 유지 후에 81%가 남았다. 결과적으로 Cyclohexene을 사용한 화학기상 경화공정은 효과적으로 높은 치밀화와 증가된 산화저항성을 보이고 있다.