• Title/Summary/Keyword: Vapor-Liquid-Solid

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Effect of Substrate Temperature and Growth Duration on Palladium Oxide Nanostructures (팔라듐 옥사이드 나노구조물의 성장에서 기판 온도와 성장 시간의 효과)

  • Kim, Jong-Il;Kim, Ki-Chul
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.20 no.4
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    • pp.458-463
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    • 2019
  • Palladium (Pd) is widely used as a catalyst and noxious gas sensing materials. Especially, various researches of Pd based hydrogen gas sensor have been studied due to the noble property, Pd can be adsorbed hydrogen up to 900 times its own volume. In this study, palladium oxide (PdO) nanostructures were grown on Si substrate ($SiO_2(300nm)/Si$) for 3 to 5 hours at $230^{\circ}C{\sim}440^{\circ}C$ using thermal chemical vapor deposition system. Pd powder (source material) was vaporized at $950^{\circ}C$ and high purity Ar gas (carrier gas) was flown with the 200 sccm. The surface morphology of as-grown PdO nanostructures were characterized by field-emission scanning electron microscopy(FE-SEM). The crystallographic properties were confirmed by Raman spectroscopy. As the results, the as-grown nanostructures exhibit PdO phase. The nano-cube structures of PdO were synthesized at specific substrate temperatures and specific growth duration. Especially, PdO nano-cube structrures were uniformly grown at $370^{\circ}C$ for growth duration of 5 hours. The PdO nano-cube structures are attributed to vapor-liquid-solid process. The nano-cube structures of PdO on graphene nanosheet can be applied to fabricate of high sensitivity hydrogen gas sensor.

A Study on San Jiao(三焦) stated on "Ling Shu(靈樞)" ("황제내경영추(黃帝內經靈樞)"에 기재된 삼초(三焦)에 관한 소고(小考))

  • Ha, Hong-Ki;Kim, Ki-Wook;Park, Hyun-Guk
    • Journal of Korean Medical classics
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    • v.24 no.4
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    • pp.43-53
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    • 2011
  • According to the result about 'San Jiao(三焦)'recorded on "Yellow Empero's Canon Internal Medicine Ling Shu(黃帝內經 靈樞)", we achieved following results. 1. As we consider the concept of 'San Jiao' recorded on "Ling Shu", in early time, it was related to bladder(膀胱) and there was no divided concept into 'Shang Jiao(上焦)', 'Zhong Jiao(中焦)' and 'Xia Jiao(下焦)'. Later, there was appearance of body metabolism concept in anatomic way and started to emphasize that stomach(胃) is the very beginning of digestion. This point then adjusted into the concept which the core theory of digestion and water metabolism begins with 'Zhong Jiao' and processes to 'Shang Jiao' and 'Xia Jiao' then it established the 'San Jiao' theory adjusted to the functional change than property change. Later as there is set theoretical structure of 'three Yin and three Yang(三陰三陽)', it included the concept of 'San Jiao' onto meridian system theory to complete as a theory. Finally, it completed the theoretical structure that 'San Jiao' runs water metabolism of circulation, body fluid and urine for body to produce blood and Qi to protect and provide nutrition to the human body. 2. From the point of each part, 'San Jiao' means all body composition factor related to the relation to the digestion and water metabolism to produce Qi and blood. Also, the details of entire function of 'San Jiao' tells that 'Zhong Jiao' intakes food and divides the clarity and turbidity of digested substances. The origin of this digestion and water metabolism lies at Xia Jiao. The clean substance including the mood and taste climbs via Shang Jiao. The vapor like substance climbed to Shang Jiao becomes 'defensive Qi(衛氣)' and controls body temperature and sweat by supporting and spreading the Qi by Shang Jiao. The liquid substance climbed to Shang Jiao becomes blood. The blood has stronger character as substance than defensive Qi so Zhong Jiao becomes the base and the way for the blood. The turbid Qi separated at Zhong Jiao passes large intestine and the solid substance is excreted and the liquid is absorbed into bladder. The Xia Jiao that controls this process controls the liquid state of water matabolism so control the urine with bladder. Therefore, 'San Jiao' can be understood as a general concept that controls entire water metabolism as a way of food, Qi and blood.

A Study on the Change of Condensable Particulate Matter by the SO2 Concentration among Combustion Gases (연소 배출가스 중 SO2 농도에 따른 응축성먼지 변화에 관한 연구)

  • Yu, JeongHun;Lim, SeulGi;Song, Jihan;Lee, DoYoung;Yu, MyeongSang;Kim, JongHo
    • Journal of Korean Society for Atmospheric Environment
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    • v.34 no.5
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    • pp.651-658
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    • 2018
  • Particulate matter (PM) emitted from fossil fuel-combustion facilities can be classified as either filterable or condensable PM. The U.S. Environmental Protection Agency (EPA) defined condensable PM as material that is in the phase of vapor at the stack temperature of the sampling location which condenses, reacts upon cooling and dilution in the ambient air to form solid or liquid in a few second after the discharge from the stack. Condensable PM passed through the filter media and it is typically ignored. But condensable PM was defined as a component of primary PM. This study investigates the change of condensable PM according to the variation in the sulfur dioxide of combustion gas. Domestic oil boilers were used as the source of emission ($SO_2$) and the level of $SO_2$ concentration (0, 50, 80, and 120 ppm) was adjusted by diluting general light oil and marine gas oil (MGO) that contains sulfur less than 0.5%. Condensable PM was measured as 2.72, 6.10, 8.38, and $13.34mg/m^3$ when $SO_2$ concentration in combustion gas were 0, 50, 80, and 120 ppm respectively. The condensable PM tended to increase as the concentration of $SO_2$ increased. Some of the gaseous air pollutants emitted from the stack should be considered precursors of condensable PM. The gas phase pollutants which converted into condensable PM should reduced for condensable PM control.

Fabrication and Its Characteristics of HgCdTe Infrared Detector (HgCdTe를 이용한 Infrared Detector의 제조와 특성)

  • 김재묵;서상희;이희철;한석룡
    • Journal of the Korea Institute of Military Science and Technology
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    • v.1 no.1
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    • pp.227-237
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    • 1998
  • HgCdTe Is the most versatile material for the developing infrared devices. Not like III-V compound semiconductors or silicon-based photo-detecting materials, HgCdTe has unique characteristics such as adjustable bandgap, very high electron mobility, and large difference between electron and hole mobilities. Many research groups have been interested in this material since early 70's, but mainly due to its thermodynamic difficulties for preparing materials, no single growth technique is appreciated as a standard growth technique in this research field. Solid state recrystallization(SSR), travelling heater method(THM), and Bridgman growth are major techniques used to grow bulk HgCdTe material. Materials with high quality and purity can be grown using these bulk growth techniques, however, due to the large separation between solidus and liquidus line on the phase diagram, it is very difficult to grow large materials with minimun defects. Various epitaxial growth techniques were adopted to get large area HgCdTe and among them liquid phase epitaxy(LPE), metal organic chemical vapor deposition(MOCVD), and molecular beam epitaxy(MBE) are most frequently used techniques. There are also various types of photo-detectors utilizing HgCdTe materials, and photovoltaic and photoconductive devices are most interested types of detectors up to these days. For the larger may detectors, photovoltaic devices have some advantages over power-requiring photoconductive devices. In this paper we reported the main results on the HgCdTe growing and characterization including LPE and MOCVD, device fabrication and its characteristics such as single element and linear array($8{\times}1$ PC, $128{\times}1$ PV and 4120{\times}1$ PC). Also we included the results of the dewar manufacturing, assembling, and optical and environmental test of the detectors.

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수직 정렬된 실리콘 와이어 어레이의 제작 방법과 동심원형 p-n 접합 태양전지의 제조 및 동향

  • Kim, Jae-Hyeon;Baek, Seong-Ho;Jang, Hwan-Su;Choe, Ho-Jin;Kim, Seong-Bin
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2010.05a
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    • pp.12.2-12.2
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    • 2010
  • 반도체 소자, 바이오 센서, 태양전지 등에서 집적도 및 소자 성능 향상을 위해서 최근 실리콘 소재를 위주로 한 수직 정렬형 와이어 어레이와 같은 3차원 구조의 소재에 대한 연구가 많이 진행되고 있다. 깊은 반응성 이온 식각법(DRIE: Deep Reactive Ion Etching)과 같은 건식 식각법으로 종횡비가 높은 실리콘 와이어 어레이를 제작할 수 있지만 시간과 공정비용이 많이 소요된다는 단점이 있고 양산성이 없다. 이를 극복하기 위해서 VLS (Vapor-Liquid-Solid)방법이 연구되고 있지만 촉매로 사용되는 금속의 오염으로 인한 소자 성능의 저하를 피할 수가 없다. 본 연구진에서 연구하는 있는 전기화학적 식각법을 사용하면 이러한 문제를 극복하고 매우 정렬이 잘 된 실리콘 와이어 어레이를 제작할 수 있으며 최적 조건을 정립하면 균일하고 재현성 있는 다양한 종횡비의 기판 수직형 실리콘 와이어 어레이를 제작할 수 있다. 또한, 귀금속 촉매 식각법은 금속 촉매를 사용하여 식각을 하지만 VLS 방법과 달리 Top-down 방법을 사용하기 때문에 최종 공정에서 용액에 담구어 귀금속을 식각하여 제거 하면 귀금속 촉매가 실리콘을 오염시키는 일은 배제할 수 있다. 귀금속 촉매 식각법의 경우 사용되는 촉매의 다양화, 포토리소그래피 방법, 그리고 식각 용액의 조성 변화에 따라 다양한 형상의 와이어 어레이를 제작할 수 있으며 이에 대한 결과를 소개하고자 한다. 3차원 실리콘 와이어 어레이를 사용하여 동심원형 p-n접합 와이어 어레이를 제작하면 소수캐리어의 확산거리가 짧아도 짧은 동심원 방향으로 캐리어를 포집할 수 있고 태양광의 입사는 와이어 어레이의 수직 방향이므로 태양광의 흡수도 효율적으로 할 수 있기 때문에 실리콘의 효율 향상을 달성할 수 있다. 이에 대한 본 연구진의 연구결과 및 최근 연구 동향을 발표하고자 한다.

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MOF-based membrane encapsulated ZnO nanowires for H2 selectivity (MOF 기반 멤브레인 기능화된 ZnO 나노선의 수소 가스 선택성)

  • Kim, Jae-Hun;Lee, Jae-Hyeong;Kim, Jin-Yeong;Kim, Sang-Seop
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2017.05a
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    • pp.106-106
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    • 2017
  • 가스센서는 사내 및 산업 환경에서의 유독성 또는 폭발성 가스 검출, 환경 모니터링, 질병 진단 등 매우 다양한 응용분야에서 큰 관심을 가지고 있다. 반도체 금속산화물(SMOs) 기반의 센서 분야에서는 이들의 감도 및 선택성을 향상시키기 위해 많은 노력을 기울이고 있다. 이는 센서의 선택성을 부여하게 되면 다양한 가스들이 존재하는 환경에서도 검출자가 원하는 가스만의 응답을 얻을 수 있기 때문이다. 본 연구에서는 MOF(Metal-Organic Framwork) 기반 멤브레인으로 ZIF-8(Zeolitic Imidazolate Frameworks 구조들 중 하나) 멤브레인 쉘 층을 이용하여 ZnO 나노선에 형성하였다. ZnO 나노선은 VLS공정 (Vapor-Liquid-Solid)을 이용하여 패턴된 전극을 갖는 $SiO_2$-grown Si 웨이퍼 상에 성장되었고, 성장된 ZnO 나노선은 2-methyl imidazole과 methanol이 포함된 고용체에 넣고 폐쇄된 압력용기 속에서 가열시켜 얻게 된다. 이렇게 얻어진 ZIF-8@ZnO 나노선의 ZIF-8 멤브레인은 분자 체 구조(molecular sieving structure)를 갖게 되며, 이들의 pore 크기는 약 $3.4{\AA}$을 갖는다. 따라서 이보다 더 큰 동적 직경을(kinetic diameter) 갖는 가스 종은 이 멤브레인을 통과할 수 없음을 나타내므로 제작된 시편은 $H_2$(kinetic diameter : $2.89{\AA}$), $C_7H_8$(kinetic diameter : $5.92{\AA}$), 그리고 $C_6H_6$(kinetic diameter : $5.27{\AA}$) 가스들을 각각 사용함으로써 ZIF-8@ZnO 나노선의 센서 특성을 조사했으며, 보다 정확한 비교를 위해 순수한 ZnO 나노선 역시 동일한 조건에서 측정되었다. 결과를 통해, 수소 가스를 제외한 다른 가스들에 대해서는 반응을 하지 않고, 오직 수소 가스에 대해서만 반응을 나타냈으며, 순수 ZnO 나노선의 수소 감응도보다 낮은 감응도를 나타내었다. 이는 멤브레인 쉘 층을 형성함으로써 ZnO 나노선의 표면적이 감소해 가스 분자와의 접촉점을 감소시키기 때문이라고 판단된다. 이와 같은 MOF 멤브레인의 캡슐화 전략은 가스센서뿐 아니라 바이오 센서 및 광촉매 등과 같은 이온 선택성을 필요로 하는 다양한 응용분야에 적용될 수 있을 것으로 기대된다.

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ZnO Nanostructure Characteristics by VLS Synthesis (VLS 합성법을 이용한 ZnO 나노구조의 특성)

  • Choi, Yuri;Jung, Il Hyun
    • Applied Chemistry for Engineering
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    • v.20 no.6
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    • pp.617-621
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    • 2009
  • Zinc oxide (ZnO) nanorods were grown on the pre-oxidized silicon substrate with the assistance of Au and the fluorine-doped tin oxide (FTO) based on the catalysts by vapor-liquid-solid (VLS) synthesis. Two types of ZnO powder particle size, 20nm, $20{\mu}m$, were used as a source material, respectively The properties of the nanorods such as morphological characteristics, chemical composition and crystalline properties were examined by X-ray diffraction (XRD), energy-dispersive X-ray spectroscopy (EDX) and field-emission scanning electron microscope (FE-SEM). The particle size of ZnO source strongly affected the growth of ZnO nanostructures as well as the crystallographic structure. All the ZnO nanostructures are hexagonal and single crystal in nature. It is found that $1030^{\circ}C$ is a suitable optimum growth temperature and 20 nm is a optimum ZnO powder particle size. Nanorods were fabricated on the FTO deposition with large electronegativity and we found that the electric potential of nanorods rises as the ratio of current rises, there is direct relationship with the catalysts, Therefore, it was considered that Sn can be the alternative material of Au in the formation of ZnO nanostructures.

Au Catalyst Free and Effect of Ga-doped ZnO Seed Layer on Structural Properties of ZnO Nanowire Arrays

  • Yer, In-Hyung;Roh, Ji-Hyoung;Shin, Ju-Hong;Park, Jae-Ho;Jo, Seul-Ki;Park, On-Jeon;Moon, Byung-Moo
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.354-354
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    • 2012
  • In this study, we report the vertically aligned ZnO nanowires by using different type of Ga-doped ZnO (GZO) thin films as seed layers to investigate how the underlying GZO film micro structure affects the distribution of ZnO nanowires. Arrays of highly ordered ZnO nanowires have been synthesized on GZO thin film seed layer prepared on p-Si substrates ($7-13{\Omega}cm$) with utilize of a pulsed laser deposition (PLD). With the vapor-liquid-solid (VLS) growth process, the ZnO nanowire synthesis carries out no metal catalyst and is cost-effective; furthermore, The GZO seed layer facilitates the uniform growth of well-aligned ZnO nanowires. The influence of the growth temperature and various thickness of GZO seed layer have been analyzed. Crystallinity of grown seed layer was studied by X-Ray diffraction (XRD); diameter and morphology of ZnO nanowires on seed layer were investigated by field emission scanning electron microscopy (FE-SEM). Our results suggest that the GZO seed layer with high c-axis orientation, good crystallinity, and less lattice mismatch is key parameters to optimize the growth of well-aligned ZnO nanowire arrays.

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광전자소자의 응용을 위한 산화아연 나노로드의 패터닝 형성방법

  • Go, Yeong-Hwan;Yu, Jae-Su
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.97-97
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    • 2011
  • 산화아연 (ZnO)은 넓은 에너지 밴드갭 (~3.37 eV), 큰 엑시톤 결합 에너지 (~60 meV) 그리고 높은 전자 이동도 (bulk~300 $cm^2Vs^{-1}$, single nanowire~1000 $cm^2Vs^{-1}$)를 갖고 있어, 광전자 소자 및 반도체소자 응용에 매우 널리 사용되고 있다. 특히, 산화아연 나노로드(ZnO nanorod)는 1차원 나노구조로써 더욱 향상된 전자 이동도와 캐리어의 direct path way를 제공하여 차세대 광전자소자 및 태양광 소자의 응용에 대한 연구가 매우 활발하게 이루어지고 있다. 한편, 이러한 산화아연 나노로드를 성장시키기 위하여 VLS (vapor-liquid-solid), 졸-겔 공정(sol-gel process), 수열합성(hydrothermal synthesis), 전기증착(electrodeposition)등 다양한 방법이 보고되었지만, 이러한 산화아연 나노로드의 성장방법은 실제적인 소자응용을 위한 패터닝 형성에 대하여 제약을 받는 문제점이 있다. 이들 중에서 수열합성법과 전극증착법은 ZnO 또는 AZO (Al doped ZnO) seed 층 표면과 성장용액의 화학반응에 의해서 선택적으로 산화아연 나노로드를 성장시킬 수 있다. 이에 본 연구에서는, 광전자소자의 응용을 위한 간단한 패터닝 공정을 위해, 산화인듐주석(ITO) 박막이 증착된 유리기판(glass substrate)위에 수열합성법과 전극증착법을 이용하여 산화아연 나노로드를 선택적으로 성장시켰다. 실험을 위해, ITO glass 위에 RF magnetron 스퍼터를 사용하여 AZO seed 층을 metal shadow mask를 이용하여 패터닝을 형성한 후, 질산아연과 헥사메틸렌테트라아민으로 혼합된 용액에 $85^{\circ}C$ 온도를 유지하여, 패터닝이 형성된 샘플에 전압을 인가하여 성장시켰다. 나노구조 분석을 위해, 전계주사현미경을 이용하여 수열합성법과 전기증착법에 의한 패터닝된 산화아연 나노로드를 비교하여 관찰하였다.

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Influence of Lithiation on Nanomechanical Properties of Silicon Nanowires Probed with Atomic Force Microscopy

  • Lee, Hyun-Soo;Shin, Weon-Ho;Kwon, Sang-Ku;Choi, Jang-Wook;Park, Jeong-Young
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.08a
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    • pp.110-110
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    • 2011
  • The nanomechanical properties of fully lithiated and unlithiated silicon nanowire deposited on silicon substrate have been studied with atomic force microscopy. Silicon nanowires were synthesized using the vapor-liquid-solid process on stainless steel substrates using Au catalyst. Fully lithiated silicon nanowires were obtained by using the electrochemical method, followed by drop-casting on the silicon substrate. The roughness, derived from a line profile of the surface measured in contact mode atomic force microscopy, has a smaller value for lithiated silicon nanowire and a higher value for unlithiated silicon nanowire. Force spectroscopy was utilitzed to study the influence of lithiation on the tip-surface adhesion force. Lithiated silicon nanowire revealed a smaller value than that of the Si nanowire substrate by a factor of two, while the adhesion force of the silicon nanowire is similar to that of the silicon substrate. The Young's modulus obtained from the force-distance curve, also shows that the unlithiated silicon nanowire has a relatively higher value than lithiated silicon nanowire due to the elastically soft amorphous structures. The frictional forces acting on the tip sliding on the surface of lithiated and unlithiated silicon nanowire were obtained within the range of 0.5-4.0 Hz and 0.01-200 nN for velocity and load dependency, respectively. We explain the trend of adhesion and modulus in light of the materials properties of silicon and lithiated silicon. The results suggest a useful method for chemical identification of the lithiated region during the charging and discharging process.

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