• Journal of the Korean institute of surface engineering
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• v.35 no.4
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• pp.211-217
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• 2002

Ti-Si-N films were deposited onto WC-Co substrate by a RF-PECVD technique. The deposition behaviors of Ti-Si-N films were investigated by varying the deposition temperature, RF power, and reaction gas ratio (Mx). Ti-Si-N films deposited at 500, 180W, and Mx 60% had a maximum hardness value of 38GPa. The microstructure of films with a maximum hardness was revealed to be a nanocomposite of TiN crystallites penetrated by amorphous silicon nitride phase by HRTEM analyses. The microstructure of maximum hardness with Si content (10 at.%) was revealed to be a nanocomposite of TiN crystallites penetrated by amorphous silicon nitride phase, but to have partly aligned structure of TiN and some inhomogeniety in distribution. and At above 10 at.% Si content, TiN crystallite became finer and more isotropic also thickness of amorphous silicon nitride phase increased at microstructure.

• Journal of the Korean Ceramic Society
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• v.41 no.9
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• pp.637-641
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• 2004

We investigated the effects of SiH$_4$ gas on the surface of Hf-silicate films during the deposition of polycrystalline (poly) Si films and the thermal stability of sputtered Hf-silicate films in poly Si/Hf-silicate structure by using High Resolution Transmission Electron Microscopy (HR-TEM) and X-ray Photoelectron Spectroscopy (XPS). Hf-silicate films were deposited by using DC-mag-netron sputtering with Hf target and Si target and poly Si films were deposited at 600$^{\circ}C$ by using Low Pressure Chemical Vapor Deposition (LPCVD) with SiH$_4$ gas. After poly Si film deposition at 600$^{\circ}C$, Hf silicide layer was observed between poly Si and Hf-silicate films due to the reaction between active SiH$_4$ gas and Hf-silicate films. After annealing at 900$^{\circ}C$, Hf silicide, formed during the deposition of poly Si, changed to Hf-silicate and the phase separation of the silicate was not observed. In addition, the Hf-silicate films remain amorphous phase.

• Journal of the Korean Ceramic Society
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• v.50 no.6
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• pp.533-538
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• 2013

Silicon carbide (SiC) materials are typical ceramic materials with a wide range of uses due to their high hardness and strength and oxidation resistance. In particular, due to the corrosion resistance of the material against acids and bases including the chemical resistance against ionic gases such as plasma, the application of SiC has been expanded to extreme environments. In the SiC deposition process, where chemical vapor deposition (CVD) technology is used, the reactions between the raw gases containing Si and C sources occur from gas phase to solid phases; thus, the merit of the CVD technology is that it can provide high purity SiC in relatively low temperatures in comparison with other fabrication methods. However, the product yield rarely reaches 50% due to the difficulty in performing uniform and dense deposition. In this study, using a computational fluid dynamics (CFD) simulation, the gas velocity inside the reactor and the concentration change in the gas phase during the SiC CVD manufacturing process are calculated with respect to the gas velocity and rotational speed of the stage where the deposition articles are located.

• Korean Journal of Materials Research
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• v.8 no.4
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• pp.345-353
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• 1998

Metal organic chemical vapor deposition (MOCVD) of copper using three Cu( I ) precursors. (hfac)Cu (VTMS) (hfac= hexafluoroacetylacetonate, VTMS= vinyltrimethylsilane), (hfac)Cu(VTMOS) (VTMOS= vinyltri¬methoxysilane) and (hfac)Cu(A TMS) (A TMS= allyltrimethylsilane) was studied. The thermal stability and the gase¬ous phase reaction mechanism of Cu( I ) precursors were identified using $^1H$-, $^I3C$-NMR and Fourier transform infra¬red spectroscopy. It was found out that thermal stability of liquid phase (hfac)Cu(VTMS) and (hfac)Cu(VTMOS) were better than that of (hfac)Cu(A TMS) using FT - NMR. From in-situ FT - IR experiments, the disproportion reaction of Cu(hfac). the decomposition reaction of Cu(hfac), and cracking of free hfac ligand were observed. Also the effect of gaseous phase reaction on the deposition rates and film properties was investigated. The minimum temperature that deposition of copper films from (hfac)Cu(A TMS) was as low as 60$^{\circ}$C and such a low deposition temperature compared with those of other Cu( I ) precursors is believed to be related with weaken Cu- A TMS bond.

• Journal of the Korean Society for Heat Treatment
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• v.7 no.2
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• pp.129-138
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• 1994

The purpose of this study is to clarify the influence of the reaction temperature and $AlCl_3$ content on the aluminide coating formation on Ni-based superalloy IN713C in CVD process and to compare its throwing power with that of Pack Cementation process. Aluminide coating was formed by CVD in hot-wall stainless tube reactor from an $AlCl_3-H_2$ mixture in the temperature range $850{\sim}1050^{\circ}C$. At reaction temperature $850^{\circ}C$, the coating thickness and the content of aluminium at the surface were increased as $AlCl_3$ heating temperature was raised. At reaction temperature $1050^{\circ}C$, they were not influenced by the variation of $AlCl_3$ heating temperature. When $AlCl_3$ heating temperature was fixed $125^{\circ}C$, the phases of the coatings were varied from $Ni_2Al_3$ to Al-rich NiAl and to Ni-rich NiAl with the reaction temperature. Therefore, in this study the reaction temperature has been found to be a major factor in determining the phase formed in CVD process. The throwing power of CVD was superior to that of Pack Cementation.

• Korean Chemical Engineering Research
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• v.43 no.3
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• pp.387-392
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• 2005

Recently, dimethyl carbonate (DMC) is considered as an alternative of MTBE (methyl tert-butyl ether), additive for non-leaded gasoline with their fast biodegradation rate and low toxicity. DMC is usually synthesized so far by oxidative carbonylation of methanol, and recently developed synthetic process is also started with methanol. Since the phase equilibria of the system, consisted of DMC and methanol or other reaction products on different temperature and pressure is necessary for the optimum separation process design and operation. However the reported phase equilibria and physical properties for DMC mixtures in the Dortmund Data Bank (DDB; thermodynamic property data bank) are quite rare. Besides, infinitely dilute properties are not found. In this work, isothermal vapor-liquid equilibria at 333.15 K for methanol+DMC binary system and mixing properties, excess molar volume and viscosity deviation at 298.15 K are directly measured and correlated. Additionally, infinitely dilute activity coefficient of methanol in the DMC solvent at three different temperatures are measured and compared with predicted values using modified UNIFAC (Dortmund).

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.6
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• pp.563-569
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• 1999

The numerical simulation method was utilized to investigate the optimal condition for synthesizing ultrafine SiC powders by using $TMS[Si(CH_3)_4]-H_2$ gaseous mixtures in the horizontal reactor. As a result of the theoretical analysis, the conversion percentage of TMS source was increased with increasing reaction temperature, however, which was decreased with increasing H$_2$flow rate. Though the SiC particles concentration synthesized was decreased with increasing the reaction temperature due to the higher collision rate in the gas phase, they were increased with increasing the H$_2$flow rate and TMS concentration. The SiC particle size showed a tendency to become larger as the reaction temperature and the initial TMS concentration were increased and smaller as the H$_2$ flow rate was increased. The variation of experimental particle size with the reaction temperature, H$_2$flow rate and TMS concentration was agreed with the theoretical results.

• Journal of the Korean institute of surface engineering
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• v.23 no.4
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• pp.197-207
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• 1990

Atomic layer epitaxy is a relatively new epitaxial pprocess chracterized by the alternate and separate exposure of a susbstrate surface to the reactants contaning the constituent element of a compound semicoductror. The ideal ALE is expected to provide sevral advantageous as petcts for growing complicated heterostrutures such as relativly easy controls of the layer thinkness down to a monolayer and in forming abrupt heterointerfaces though monolayer self-saturatio of the growth. In addition, since ALE is stongly dependent on the surface reaction, the growth can also be controlled by photo-excitation which provides activation can be energies for each step of the reaction paths. The local growth acceleration by photo-excitation can be exploited for growing several device strures on the same wafer, which provides another important practical advantage. The ALE growth of GaAs has advanced to the point the laser opertion has been achieved from AlGs/GaAs quantun well structures where thee active layers were grown by thermal and Ar-laser assisted ALE. The status of the ALE growth of GaAs and other III-V compounds will be reviewed with respect to the growth saturation behavior and the electrical properties of the grown crystals.

• Journal of Korean Society for Atmospheric Environment
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• v.17 no.1
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• pp.57-66
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• 2001

Gas phase photocatalytic oxidation of tetrachloroethylene (PCE) under 370 nm ultra-violet irradiation was investigated with TiO$_2$ catalyst. During the photocatalytic oxidation of PCE vapor several kinds of intermediate were produced, and the reaction pathways were proposed on the basis of the production sequency of the intermediates. The intermediates in the pathways of PCE oxidation were hexachloroethane, pentachlotoethane, 1, 1, 2-trichloroethane, carbon tetrachl-oride, dichloroacetylchloride, chloroform, 1,1-dichloroethane, phosgene, CO, $CO_2$, HCl, Cl$_2$.

• Journal of Korean Vacuum Science & Technology
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• v.2 no.2
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• pp.118-121
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• 1998

Diisopropylselenide (DIPSe) is employed for the metalorganic vapor phase epitaxy (MOVPE) of ZnSe in order to eliminate premature gas phase reaction while maintaining negligible carbon incorporation and preserving relatively low growth temperature. In combination with dimethylzinc, single crystalline ZnSe layers were grown on GaAs at temperature around 450$^{\circ}C$. Secondary ion mass spectrometry showed a negligible carbon incorporation in ZnSe films grown from DIPSe even at high [Ⅵ]/[II] ratios, in contrast of a carbon concentration of 1021 cm-3 in ZnSe films grown from diallyselenide (DASe). Crystalline and interface quality are demonstrated by secondary electron microscopy, secondary ion mass spectroscopy and double crystal X-ray diffraction.