Journal of the Korean Ceramic Society (한국세라믹학회지)

The Korean Ceramic Society (한국세라믹학회)
권호 표지
DOI QR코드

DOI QR Code

Application of Computational Fluid Dynamic Simulation to SiC CVD Reactor for Mass Production

대량 생산용 SiC CVD 리엑터에의 전산유체역학 시뮬레이션의 적용

  • Seo, Jin-Won (KICET Icheon Branch, Korea Institute of Ceramic Engineering and Technology) ;
  • Choi, Kyoon (KICET Icheon Branch, Korea Institute of Ceramic Engineering and Technology)
  • 서진원 (한국세라믹기술원 이천분원) ;
  • 최균 (한국세라믹기술원 이천분원)
  • Received : 2013.10.25
  • Accepted : 2013.10.31
  • Published : 2013.11.30
Download PDF
⟨ Previous Next ⟩

Abstract

Silicon carbide (SiC) materials are typical ceramic materials with a wide range of uses due to their high hardness and strength and oxidation resistance. In particular, due to the corrosion resistance of the material against acids and bases including the chemical resistance against ionic gases such as plasma, the application of SiC has been expanded to extreme environments. In the SiC deposition process, where chemical vapor deposition (CVD) technology is used, the reactions between the raw gases containing Si and C sources occur from gas phase to solid phases; thus, the merit of the CVD technology is that it can provide high purity SiC in relatively low temperatures in comparison with other fabrication methods. However, the product yield rarely reaches 50% due to the difficulty in performing uniform and dense deposition. In this study, using a computational fluid dynamics (CFD) simulation, the gas velocity inside the reactor and the concentration change in the gas phase during the SiC CVD manufacturing process are calculated with respect to the gas velocity and rotational speed of the stage where the deposition articles are located.

Keywords

References

  1. K.-S. Cho, S.-H. Yoon, H. Chung, S.-H. Chae, K.-Y. Lim, Y.-W. Kim, and S.-H. Park, "SiC Materials Techniques for Semiconductor Production Line (in Korean)," Ceramist, 10 [6] 33-48 (2007).
  2. J.-H. Lee, "Analysis on Development Process of Semiconductor Industry and Competitiveness of Semiconductor Equipment Industry in Korea (in Korean)," pp. 6-8, Master Thesis, Gyonggi University, Suwon, 2012.
  3. Y.-H. Yun and S.-C. Choi, "Fabrication of SiC Convered Graphite by Chemical Vapor Reaction Method (II) (in Korean)," J. Kor. Ceram. Soc., 36 [1] 21-29 (1999).
  4. W.-J. Kim, J. Y. Park, J. -I. Kim, G. W. Hong, and J. Ha, "Deposition of Large Area SiC Thick Films by Low Pressure Chemical Vapor Deposition (LPCVD) Method (in Korean)," J. Kor. Ceram. Soc., 38 [5] 485-91 (2001).
  5. G. Chichignoud, M. Ucar-Morais, M. Pons, and E. Blanquet, "Chlorinated Silicon Carbide CVD Revisited for Polycrystalline Bulk Growth," Surf. Coat. Technol., 201 [22-23] 8888-92 (2007). https://doi.org/10.1016/j.surfcoat.2007.04.113
  6. K. Choi and J.-W. Kim, "Thermodynamic Comparison of Silicon Carbide CVD Process between $CH_3SiCl_3-H_2\;and\;C_3H_8-SiCl_4-H_2$ Systems (in Korean)," Kor. J. Met. Mater., 50 [8] 569-73 (2012). https://doi.org/10.3365/KJMM.2012.50.8.569
  7. J.-W. Kim, J.-W. Seo, K. Choi, and J.-H. Lee, "Application of CFD Simulation to CVD Process (in Korean)," J. Comput. Fluids Eng., 18 [3] 67-71 (2013). https://doi.org/10.6112/kscfe.2013.18.3.067
  8. K. Choi and J.-W. Kim, "CFD Simulation of Chemical Vapor Deposition of Silicon Carbide in $CH_3SiCl_3-H_2$ System," Curr. Nanosci., In press.
  9. Y. Yan and Z. Weigang, "Kinetic and Microstructure of SiC Deposited from $SiCl_4-CH_4-H_2$," Chin. J. Chem. Eng., 17 [3] 419-26 (2009). https://doi.org/10.1016/S1004-9541(08)60226-8
  10. R. Wang and R. Ma, "Kinetics of Halide Chemical Vapor Deposition of Silicon Carbide Film," J. Crystal Growth, 308 [1] 189-97 (2007). https://doi.org/10.1016/j.jcrysgro.2007.07.038
  11. H. Habuka, M. Watanabe, M. Nishida, and T. Sekiguchi, "Polycrystalline Silicon Carbide Film Deposition Using Monomethylsilane and Hydrogen Chloride Gases," Surf. Coat. Technol., 201 [22-23] 8961-65 (2007) https://doi.org/10.1016/j.surfcoat.2007.04.023
  12. J. Nishio, M. Hasegawa, K. Kojima, T. Ohno, Y. Ishida, T. Takahashi, T. Suzuki, T. Tanaka, and K. Arai, "Uniformity of 4H-SiC Epitaxial Layers Grown on 3-in Diameter Substrates," J. Crystal Growth, 258 [1-2] 113-22 (2003). https://doi.org/10.1016/S0022-0248(03)01498-2
  13. F. M. White, "Fluid Mechanics," 6th Ed., Chap. 4, McGraw-Hill Korea, Inc., 2008.
  14. R. B. Bird and W. E. Stewart, "Transport Phenomena," 2nd Ed., John Wiley & Sons, New-York, 2001.

Cited by

  1. 탄화규소 화학기상증착 공정에서 CFD를 이용한 균일도 향상 연구 vol.24, pp.6, 2013, https://doi.org/10.6111/jkcgct.2014.24.6.242