• Journal of Powder Materials
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• v.15 no.1
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• pp.58-62
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• 2008

Reaction bonded silicon carbide (RBSiC) is an important engineering ceramic because of its high strength and stability at elevated temperatures, and it is currently fabricated using reasonably cheap manufacturing processes, some of which have been used since the 1960s. However, forming complicated shapes from these materials is difficult because of their poor workability. The purpose of this work is to join the reaction-bonded SiC parts using a preceramic polymer as joint material. The manufacturing of ceramic material in the system Si-O-C from preceramic silicon containing polymers such as polysiloxanes has attained particular interest. The mixtures of preceramic polymer and filler materials, such as SiC, Si and MoSi, were used as a paste for the joining of reaction sintered SiC parts. The joining process during the annealing in Ar atmosphere at $1450^{\circ}C$ were described. The maximum strength of the joints was 63 MPa for the specimen joined with 10 vol.% of $MoSi_2$ and 30 vol.% of SiC as filler materials. Fracture occurred in the joining layer. This indicates that the joining strength is limited by the strength of the joint materials.

• Journal of the Korean Ceramic Society
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• v.50 no.6
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• pp.533-538
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• 2013

Silicon carbide (SiC) materials are typical ceramic materials with a wide range of uses due to their high hardness and strength and oxidation resistance. In particular, due to the corrosion resistance of the material against acids and bases including the chemical resistance against ionic gases such as plasma, the application of SiC has been expanded to extreme environments. In the SiC deposition process, where chemical vapor deposition (CVD) technology is used, the reactions between the raw gases containing Si and C sources occur from gas phase to solid phases; thus, the merit of the CVD technology is that it can provide high purity SiC in relatively low temperatures in comparison with other fabrication methods. However, the product yield rarely reaches 50% due to the difficulty in performing uniform and dense deposition. In this study, using a computational fluid dynamics (CFD) simulation, the gas velocity inside the reactor and the concentration change in the gas phase during the SiC CVD manufacturing process are calculated with respect to the gas velocity and rotational speed of the stage where the deposition articles are located.