• Journal of the Korean Vacuum Society
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• v.14 no.4
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• pp.222-228
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• 2005

Undoped GaN epitaxial layer was grown on c-plane sapphire substrate by a two-step growth with metalorganic chemical vapor deposition(MOCVD). We have investigated the effects of the variation of final growth temperature on surface morphology, roughness, crystal quality, optical property, and electrical property In a horizontal MOCVD reactor, the film was grown at 300 Tow low-pressure with a fixed nucleation temperature of $500^{\circ}C$, varing the final growth temperature from $850\~1050^{\circ}C$ . The undoped GaN epilayers were characterized by atomic force microscopy, high-resolution x-ray diffractometer, photoluminescence, and Hall effect measurement.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.34 no.1
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• pp.36-39
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• 2024

As interest in power semiconductors is growing recently, research on device design and application using light energy gap materials such as SiC and GaN is being actively conducted. Because AlN single crystals have a larger energy gap than the above mentioned materials, research on high-power devices is also in progress, but commercialized wafers have not yet been reported, so research is needed. In this study, we applied the HVPE (Hydride vapor phase epitaxy) method to produce AlN single crystals and attempted to obtain bulk single crystals using our own manufacturing equipment. To this end, we would like to report the results of securing the growth conditions for single crystals. we would like to report on the change in the shape of the grown crystal according to the change in temperature.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.19 no.1
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• pp.6-10
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• 2009

In this paper, a selective area growth (SAG) of a GaN/AlGaN double heterostructure (DH) has been performed on r-plane sapphire substrate by using the mixed-source hydride vapor phase epitaxy (HVPE) with multi-sliding boat system. The SAG-GaN/AlGaN DH consists of GaN buffer layer, Te-doped AlGaN n-cladding layer, GaN active layer, Mg-doped AlGaN p-cladding layer, and Mg-doped GaN p-capping layer. The electroluminescence (EL) characteristics show an emission peak of wavelength, 439 nm with a full width at half maximum (FWHM) of approximately 0.64 eV at 20 mA. The I-V measurements show that the turn-on voltage of the SAG-GaN/AlGaN DH is 3.4 V at room temperature. We found that the mixed-source HVPE method with a multi-sliding boat system was one of promising growth methods for III-Nitride LEDs.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.14 no.1
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• pp.1-5
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• 2004

Carbon nanofilaments were formed on silicon substrate via microwave plasma-enhanced chemical vapor deposition method. The structure of carbon nanofilaments was identified as the carbon nanofibers. The extent of carbon nanofibers growth and the diameters of carbon nanofibers increased with increasing the total pressure. The growth direction of carbon nanofibers was horizontal to the substrate. Laterally grown carbon nanofibers showed the semiconductor electrical characteristics.

• 한국신재생에너지학회:학술대회논문집
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• 2010.06a
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• pp.66.1-66.1
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• 2010

Microcrystalline silicon at low temperatures has been developed using plasma enhanced chemical vapor deposition (PECVD). It has been found that energetically positive ion and atomic hydrogen collision on to growing surface have important effects on increasing growth rate, and atomic hydrogen density is necessary for the increasing growth rate correspondingly, while keeping ion bombardment is less level. Since the plasma potential is determined by working pressure, the ion energy can be reduced by increasing the deposition pressure of 700-1200 Pa. Also, correlation of the growth rate and crystallinity with deposition parameters such as working pressure, hydrogen flow rate and input power were investigated. Consequently an efficiency of 7.9% was obtained at a high growth rate of 0.92 nm/s at a high RF power 300W using a plasma-enhanced chemical vapor deposition method (27.12MHz).

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.14 no.5
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• pp.226-232
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• 2004

One predicts the crystal growth rate of ZnSe with a low vapor pressure system in a horizontal configuration based on one dimensional advection-diffusion and two-dimensional diffusion-convection model. The present results show that for the ratios of partial pressures, s = 0.2 and 2.9, the growth rate increases with the temperature differences between the source and crystal. As the ratio of partial pressure approaches the stoichiometric value, s = 2 from s = 1.5 (zinc-deficient case: s < 2) and 2.9 (zinc-rich case: s > 2), the rate increases sharply. For the ranges from 1.5 to 1.999 (zinc-deficient case: s < 2) and from s = 9 to 2.9 (zinc-rich case: s > 2), the rate are slightly varied. From the viewpoint of the order of magnitude, the one-dimensional model for low vapor pressure system falls within the 2D predictions, which indicates the flow fields would be advective-diffusive. For the effects of gravitational accelerations on the rate, the gravitational constants are varied from 1 g to $10^{-6}$ g for $\Delta$T = 50 K and s = 1.5, the rates remain nearly constant, i.e., 211 mg/hr, which indicates Stefan flow is dominant over convection.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.1
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• pp.132-138
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• 2007

Carbon nanotubes (CNTs) arc grown on Ni catalysts employing an inductively-coupled plasma chemical vapor deposition (ICP-CVD) method. The structural and field-emissive properties of the CNTs grown are characterized in terms of the substrate-bias applied. Characterization using the various techniques, such as field-omission scanning electron microscopy (FESEM), high-resolution transmission electron microscopy (HRTEM), Auger spectroscopy (AES), and Raman spectroscopy, shows that the structural properties of the CNTs, including their physical dimensions and crystal qualities, as well as the nature of vertical growth, are strongly dependent upon the application of substrate bias during CNT growth. It is for the first time observed that the provailing growth mechanism of CNTs, which is either due to tip-driven growth or based-on-catalyst growth, may be influenced by substrate biasing. It is also seen that negatively substrate-biasing would promote the vertical-alignment of the CNTs grown, compared to positively substrate-biasing. However, the CNTs grown under the positively-biased condition display a higher electron-emission capability than those grown under the negatively-biased condition or without any bias applied.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1219-1224
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• 2006

This study investigates the effect of $NH_3$ gas upon the growth of carbon nanotubes (CNTs) using thermal chemical vapor deposition. It is considered that the CNT synthesis occurs mainly through two steps, clustering of catalyst particles and subsequent growth of CNTs. We thus introduced $NH_3$ during either an annealing or growth step. When $NH_3$ was fed only during annealing, CNTs grew longer and more highly crystalline with diameters unchanged. An addition of $NH_3$ during growth, however, resulted in shorter CNTs with lower crystallinity while increased their diameters. Vertically aligned, highly populated CNT samples showed poor field emission characteristics, leading us to apply post-treatments onto the CNT surface. The CNTs were treated by adhesive tapes or etched back by dc plasma of $N_2$ to reduce the population density and the radius of curvatures of CNTs. We discuss the morphological changes of CNTs and their field emission properties upon surface treatments.

• Journal of the Korean institute of surface engineering
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• v.50 no.6
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• pp.516-522
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• 2017

We report the growth of carbon nanotubes (CNT) on Invar-42 plates using coal tar pitch (CTP) by chemical vapor deposition (CVD) method. The solid phase CTP is used as an inexpensive carbon source since it produces a bunch of hydrocarbon gases such as $CH_4$ and other $C_xH_v$ by thermal decomposition over $450^{\circ}C$. The Invar-42 is a representative Ni-based ferrous alloy and can be used repetitively as a substrate for CNT growth because Ni and Fe are used as very active catalytic elements. We changed mixing ratio of carrier gases, argon and hydrogen, and temperature of growth region. It was found that the optimum gas ratio and temperature for high quality CNT growth are $Ar:H_2=400:400$ sccm and $1000^{\circ}C$, respectively. In addition, the carbon nanoball (CNB) was also obtained by just changing the mixing ratio to $Ar:H_2=100:600$ sccm. Finally, CTP can be employed as a versatile carbon source to produce various carbon-based nanomaterials, such as CNT and CNB.

• Journal of the Korean institute of surface engineering
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• v.56 no.1
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• pp.55-61
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• 2023

As a preliminary study to produce functional nanocomposites in a heat dissipation device, we performed the direct synthesis of carbon nanotubes (CNTs) on the surface of alumina (Al₂O₃) powders. A thermal chemical vapor deposition (TCVD) system was used to grow CNTs directly on the Al₂O₃ surface. In order to investigate the growth behavior of CNTs, we varied both furnace temperature of the TCVD ranging from 700 to 850 ℃ and concentration of the ferritin-dissolved DI solution from 0.1 to 2.0 mg/mL. From the previous results, the gas composition and duration time for CNT growth were fixed as C₂H₄ : H₂ = 30 : 500 (vol. %) and 10 min, respectively. Based on the analysis results, the optimized growth temperature and ferritin concentration were found to be 825 ℃ and 0.5 mg/mL, respectively. The obtained results could be adopted to achieve mass production of nanocomposites with heat dissipation functionality.