• Journal of the Korean Ceramic Society
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• v.53 no.2
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• pp.167-170
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• 2016

Various piezoelectric nanostructures have been extensively studied for competitive energy harvesting applications. Here, GaN nanowires grown by a nonconventional magnetic field-assisted chemical vapor deposition process were investigated to characterize the piezoelectric energy harvesting characteristics. As a controlling parameter, only the growth time was changed from 15 min to 90 min to obtain different crystallinity and morphology of the nanowires. Energy harvesting characteristics were found to depend largely on the growth time. A longer growth time tended to lead to an increased output current, which is reasonable when considering the enhanced charge potentials and crystallinity. A maximum output current of ~14.1 nA was obtained for the 90 min-processed nanowires.

• Proceedings of the KSME Conference
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• 2003.11a
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• pp.73-78
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• 2003

The InP thin films grown by metalorganic chemical vapor deposition (MOCVD) are widely used to optoelectronic devices such as laser diodes, wave-guides and optical modulators. Effects of various parameters controlling film growth rate such as gas-phase reaction rate constant, surface reaction rate constant and mass diffusivity are numerically investigated. Results show that at the upstream region where film growth rate increases with the flow direction, diffusion including thermal diffusion plays an important role. At the downstream region where the growth rate decreases with flow direction, film deposition mechanism is revealed as a mass-transport limited. Mass transport characteristics are also studied using systematic analyses.

• 한국정보디스플레이학회:학술대회논문집
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• 2002.08a
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• pp.678-680
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• 2002

Vertically aligned carbon nanotubes(CNTs) have been grown on Ni-coated TiN/Si substrate by microwave plasma chemical vapor deposition using $H_2/CH_4$ mixture gas. We have investigated the Effect of process parameters on the growth of CNT. During the growth, microwave power, pressure, and growth temperature were varied from 300 W to 700 W, 10 Torr to 30 Torr, and 300 $^{\circ}C$ to 700 $^{\circ}C$. respectively. Then we controlled the size of CNTs. The structure of CNT was sensitively dependent on the process parameters.

• The Transactions of the Korean Institute of Electrical Engineers
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• v.36 no.1
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• pp.29-35
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• 1987

TPolystyrene thin films are prepared by glow discharge of sytrene monomer vapor th establish the growth mechanism of organic thin films by the plasma polymerization. As the discharge parameters, discharge current(5mA-20mA), frequency (10kHz-50kHz, 13.56MHz), gaspressure (0.2torr-1.5torr), and discharge time(2min-12min)are adopted. Plasma-polymerized filmsof styrene vapor are identified as polystyrene by IR spectra. The thickness of plasma-polymerized films increases with gas pressure, frequency and discharge current in the region of the low frequency and below the allowed gas pressure where the polymerization occurs. It is suggested that the growth mechanism can be explained by ionic reaction in d.c. and low frequency region, and by radical reaction in high frequency region.

• Journal of the Korean Ceramic Society
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• v.26 no.4
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• pp.550-558
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• 1989

Polycrystalline diamond films have been deposited on Si wafer Ly hot W filament CVD method using CH4H2 mixtures. The effects of surface pretreatment, W filament temperature, CH4 volume fraction, and addition of water vapor on the growth rate and morphology of the films were investigated. Surface pretretment was essential for depositing a continuous diamond film. Raising the filament temperature resulted in an increased growth rate and a better crystal quality of the film. As the methane content is varied from 0.5% to 5%, well-faceted crystals gradually transformed into spherical particles of non-diamond phase with a simultaneous increase in the growth rate. Addition of water vapor markedly improved the crystallinity to produce crystalline particles even with 5% methane mixture.

• Journal of the Semiconductor & Display Technology
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• v.4 no.4 s.13
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• pp.9-12
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• 2005

Characteristics of ZnO films grown on $Si-SiO_2$ substrates at temperatures of $200\sim400^{\circ}C$ by metalorganic chemical vapor deposition were investigated. The growth rates and mobilities of ZnO films were dependent on growth temperatures. The field-effect mobilities measured in thin-film transistor structure were $15cm^2/Vsec$.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.590-590
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• 2013

Direct growth of graphene using CVD method has been done on CVD grown boron nitride substrate. From the SEM image, we have shown that the size of grain of graphene could be clearly controlled by varying the amount of injected hydrocarbon. To convince the existence of graphene on boron nitride, XPS and Raman has been checked. Both B1s and N1s peaks in XPS spectra and the Raman peak around 1,370 $cm^{-1}$ demonstrated that boron nitride did remain after high temperature treatment during the graphene growth process. And along the graphene grain boundary, the Raman fingerprint of graphene was neatly appeared.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.16 no.1
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• pp.12-19
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• 2006

Metalorganic chemical vapor deposition (MOCYD) techniques have been applied to fabricate semiconducting ZnO thin films and nanostructures, which are promising for novel optoelectronic device applications using their unique multifunctional properties. The growth and characterization of ZnO thin films on Si and $SiO_2$ substrates by MOCYD as fundamental study to realize ZnO nanostructures was carried out. The precise control of initial nucleation processes was found to be a key issue for realizing high quality epitaxial layers on the substrates. In addition, fabrication and characterization of ZnO nanodots with low-dimensional characteristics have been investigated to establish nanostructure blocks for ZnO-based nanoscale device application. Systematic realization of self- and artificially-controlled ZnO nanodots on $SiO_2/Si$ substrates was proposed and successfully demonstrated utilizing MOCYD in addition with a focused ion beam technique.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.5
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• pp.371-377
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• 1998

The plasma chemical vapor deposition is one of the most utilized techniques for the diamond growth. As the applications of diamond thin films prepared by plasma chemical vapor deposition(CVD) techniques become more demanding, improved fine-tuning and control of the process are required. The important parameters in diamond film deposition include the substrate temperature, $CO/H_2$gas flow ratio, total gas pressure, and gas excitation power. With the spectroscopic ellipsometry, the substrate temperature as well as the various parameters of the film can be determined without the physical contact and the destructiveness under the extreme environment associated with the diamond film deposition. Through this paper, the important parameters during the diamond film growth using $CO+H_2$are determined and it is shown that $sp^2$ C in the diamond film is greatly reduced.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.51 no.1
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• pp.33-38
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• 2002

In this study, the metastable state diamond thin films have been deposited on Si substrates from methane-hydrogen and oxygen mixture using microwave plasma enhanced chemical vapor deposition (MPCVD) method. Effects in experimental parameters of MPCVD including methane concentrations, oxygen additions, operating pressure, deposition time on the growth rate and crystallinity were investigated. Diamond thin film was synthesized under the following conditions: methane concentration of 0.5%(0.5sccm)~5%(5sccm), oxygen concentration of 0~80%(2.4sccm), operating pressure of 30Torr~70Torr, deposition time of 1~32hr. SEM, XRD, and Raman spectroscopy were employed to analyze the growth rate and morphology, crystallinity and prefered growth direction, and relative amounts of diamond and non-diamond phases, respectively.