• 한국세라믹학회지
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• 제23권5호
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• pp.81-85
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• 1986

$SnO_2$ thin films have been prepared by chemical vapor deposition technique. Electrical and optical properties of the films have been investigated. It is found that the electrical condictivity and optical transparency of the films are most affected by deposition temperature and more affected by $SnCl_4$ partial pressure than by $O_2$ partial pressure. Experimental results show that the conductivity increases with high optical transparency as deposition temperature increases up to 50$0^{\circ}C$ but the conductivity decreases with the loss of transparency as deposition temperature increases above $600^{\circ}C$.

• Transactions on Electrical and Electronic Materials
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• 제6권1호
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• pp.14-17
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• 2005

The SrRuO_{3}$ films for application of the bottom electrode were deposited on p-Si (001) substrates by metalorganic chemical vapor deposition (MOCVD). The films are characterized by various deposition parameters. The optimum deposition condition for SRO films is the deposition temperature of $500{\circ}C$, Sr/Ru input mol ratio of 1.0, and a flow rate of precursors of 15 ml/h. The films deposited by an optimum condition exhibited a single phase of SrRuO_{3}$, an rms roughness of 8 nm, and a resistivity of approximately $900{\mu}{\Omega}{\cdot}cm$. The high resistivity of the films for application of a bottom electrode should be improved through a characterization of an interface.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 추계학술대회 논문집
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• pp.367-370
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• 2000

In this study, thin films of 70/30 and 80/20 mol% P(VDF-TrFE) copolymers were fabricated by physical vapor deposition method. In order to determine the optimum deposition condition, the copolymer thin films were fabricated in the heating temperature of 260$^{\circ}C$, 280$^{\circ}C$, and 300$^{\circ}C$. The deposition rate was measured in a real time by thickness monitor. The surface image of prepared thin films was analyzed by using AFM. From the results of TG-DTA,70/30 and 80/20 mol% P(VDF-TrFE) copolymers were observed the Curie transition point below the melting point. As the results of AFM and FT-IR analysis, we determined that the optimum deposition temperature was 300$^{\circ}C$.

• 전기학회논문지P
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• 제51권1호
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• pp.33-38
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• 2002

In this study, the metastable state diamond thin films have been deposited on Si substrates from methane-hydrogen and oxygen mixture using microwave plasma enhanced chemical vapor deposition (MPCVD) method. Effects in experimental parameters of MPCVD including methane concentrations, oxygen additions, operating pressure, deposition time on the growth rate and crystallinity were investigated. Diamond thin film was synthesized under the following conditions: methane concentration of 0.5%(0.5sccm)~5%(5sccm), oxygen concentration of 0~80%(2.4sccm), operating pressure of 30Torr~70Torr, deposition time of 1~32hr. SEM, XRD, and Raman spectroscopy were employed to analyze the growth rate and morphology, crystallinity and prefered growth direction, and relative amounts of diamond and non-diamond phases, respectively.

• 한국진공학회지
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• 제8권3A호
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• pp.201-206
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• 1999

Transparent and conduction tin oxide films have been deposited on glass substrates employing the low pressure chemical vapor deposition technique. Tetramethyltin, 1, 1, 1, 2-tetrafluoroethane, and pure oxygen or ozone-containing oxygen were used as the precursor, dopant and oxidant, respectively. In order to examine the role of ozone in the low pressure chemical vapor deposition of tin oxide films, deposition rate, and electrical and optical properties of tin oxide films deposited using ozone-containing oxygen were compared with those using pure oxygen. Tetramethyltin and 1, 1, 1, 2-tetrafluoroethane were chemically activated by thermally initiated decomposition of ozone. Using ozone-containing oxygen under otherwise identical deposition conditions, we succeeded in preparing tin oxide films f better quality at higher deposition rate.

• 공업화학
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• 제29권1호
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• pp.18-21
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• 2018

본 연구에서는 대용량 구조 촉매의 제조 및 활용 가능성을 확인하고자 셀 밀도가 높은 세라믹 허니컴 구조체와 온도조절 화학기상증착법을 활용하여 촉매를 제조하고 건식 개질 반응에 대한 촉매 활성을 평가하였다. 셀 밀도 600 cpsi 코디어라이트 허니컴(CDR)을 대상으로 니켈을 코팅한 NiO/CDR 촉매는 코팅 조건과 시간을 조절함으로써 허니컴 구조체 셀 내부까지 충분한 균일 증착이 가능하였다, $800^{\circ}C$, 공간속도 $10,000h^{-1}$과 $CH_4$와 $CO_2$를 1 : 1로 주입한 조건에서 $CH_4$는 약 83%, $CO_2$는 약 90% 이상의 우수한 전환율을 보여 건식 개질 반응에 효과적으로 적용이 가능하다는 것을 확인하였다. 이 결과를 토대로 대면적, 대용량 촉매 제조 시 온도조절 화학기상증착법이 매우 유용하게 활용될 수 있음을 확인하였다.

• 한국진공학회지
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• 제20권2호
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• pp.86-92
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• 2011

본 연구에서는 새롭게 개발된 센서인 in-situ particle monitor (ISPM)와 기존센서의 기능을 업그레이드 한 센서인 self-plasma optical emission spectroscopy (SPOES)를 이용해 화학기상증착 진공공정을 진단하였다. 본 연구에서 사용된 증착공정 장비는 silane 가스를 이용한 silicon plasma enhanced chemical vapor deposition과 borophosphosilicate glass 증착장비이다. 두 장비의 증착 또는 클리닝 조건에서의 배출되는 오염입자와 배기가스를 개발된 센서를 이용해 공정상태를 실시간으로 진단하는 것과 개발된 센서의 센싱 능력을 검증하고자 하는 목적으로 연구가 진행되었다. 개발된 센서는 장비 배기구 설치되었으며, 공정압력, 유량, 플라즈마 파워 등의 공정변수 변화에 따른 오염입자 크기 및 분포와 배기 부산물의 변화를 측정하고, 측정 결과의 상호 연관성을 분석하였다.

• 한국산학기술학회논문지
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• 제12권11호
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• pp.4711-4717
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• 2011

PVD방식에 의한 TiN박막의 형성은 DC와 RF sputtering deposition 방식을 적용할 수 있지만, 플라즈마 생성을 위해 주입된 가스의 이온화율이 떨어져 박막성형 속도가 느려지며, 박막과의 접착력을 높이는 것에도 한계성을 가지고 있다. 이를 개선하기 위해 증착과 동시에 이온빔을 조사하는 이온빔 진공증착 IBAD(Ion beam assisted deposition)를 이용 하게 되면, 코팅 전에 소재 표면을 Ion beam으로 조사하기 때문에 표면cleaning의 효과가 크고, 접착력이 높은 박막을 얻을 수 있다. 또한 고 진공과 낮은 온도에서도 균일한 두께의 고순도의 박막을 얻을 수 있는 이점이 있다.

• 반도체디스플레이기술학회지
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• 제23권2호
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• pp.87-91
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• 2024

SiO₂, renowned for its excellent insulating properties, has been used in the semiconductor industry as a valuable dielectric material. High-quality SiO₂ films find applications in gate spacers and interlayer insulation gap-fill oxides, among other uses. One of the prevalent methods for depositing these SiO₂ films is plasma enhanced chemical vapor deposition (PECVD) favored for its relatively low processing costs and ability to operate at low temperatures. However, compared to the increasingly utilized atomic layer deposition (ALD) method, PECVD exhibits inferior film characteristics such as uniformity. This study aims to produce SiO₂ films with uniformity as close as possible to those achieved by ALD through the adjustment of PECVD process parameters. we conducted a total of nine PECVD processes, varying the process time and gas flow rates, which were identified as the most influential factors on the PECVD process. Furthermore, ellipsometry analysis was employed to examine the uniformity variations of each process. The experimental results enabled us to elucidate the relationship between uniformity and deposition rate, as well as the impact of gas flow rate and deposition time on the process outcomes. Additionally, thickness measurements obtained through ellipsometer facilitate the identification of optimal process parameters for PECVD.

• 한국재료학회지
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• 제19권10호
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• pp.522-526
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• 2009

Graphene has been effectively synthesized on Ni/SiO$_2$/Si substrates with CH$_4$ (1 SCCM) diluted in Ar/H$_2$(10%) (99 SCCM) by using an inductively-coupled plasma-enhanced chemical vapor deposition. Graphene was formed on the entire surface of the 500 nm thick Ni substrate even at 700 $^{\circ}C$, although CH$_4$ and Ar/H$_2$ gas were supplied under plasma of 600 W for 1 second. The Raman spectrum showed typical graphene features with D, G, and 2D peaks at 1356, 1584, and 2710 cm$^{-1}$, respectively. With increase of growth temperature to 900 $^{\circ}C$, the ratios of the D band intensity to the G band intensity and the 2D band intensity to the G band intensity were increased and decreased, respectively. The results were strongly correlated to a rougher and coarser Ni surface due to the enhanced recrystallization process at higher temperatures. In contrast, highquality graphene was synthesized at 1000 $^{\circ}C$ on smooth and large Ni grains, which were formed by decreasing Ni deposition thickness to 300 nm.