• 한국표면공학회지
• /
• 제31권5호
• /
• pp.297-303
• /
• 1998

The influences of vanadium addition on the cavitation erosion resistance pf Fe-Cr-Ni-Si-C hardfacing alloy were investigated using a vibratory apparatus up to 30 hrs. It was shown that 1wt.%V additioned alloy improved the resistance to cavitation damage. However, further increase in V content up to 2wt.% reduced the cavitation erosion resistance. It was considered that the addition of V developed the cavitation erosion resistance by reducing the stacking fault energy of Fe-Cr-Ni-Si-C alloy. However, the further increase in V content seemed to reduce the cavitation erosion resistance by increasing the matrix/carbide interfacial area, which was the preferential sites of the cavitation damage.

• 분석과학
• /
• 제5권2호
• /
• pp.203-211
• /
• 1992

Ni-36.5at.%Al 합금에서 결정립계에서의 scavenging 원소로 알려진 V를 첨가하여 이 합금의 파괴거동 및 마르텐사이트 미세조직에 미치는 V의 영향에 대해 조사하였다. 시편의 파단면은 주사전자현미경으로 관찰하였고 EDX spectrometer를 사용하여 파단면의 조성을 분석하였으며 투과전자현미경으로 마르텐사이트 내부조직의 변화에 대해 조사하였다. V의 첨가로 입계파괴에서 입내파괴로 파괴 모드의 변화를 나타내었으며 EDX spectrometer로 분석한 결과 입내에 비해 입계에 Al의 함량이 상대적으로 증가되는 양상을 보여 주었다. Ni-36.5at.%Al 합금의 경우 마르텐사이트 플레이트는 내부쌍정으로 이루어져 있으나 V의 첨가에 따라 twinned 마르텐사이트 조직은 사라지며 stacking fault와 고밀도의 전위를 가진 modulated 조직이 점차 지배적으로 형성되는 것이 관찰되었다. Stacking fault를 분석한 결과 Al과 V의 치환에 따른 extrinsic fault였으며 high-energy 상태인 이 stacking fault가 있는 부위에 유해 원소인 S가 편석됨으로써 결정립계에서의 파괴를 줄일 수 있었다.

• 한국표면공학회지
• /
• 제36권4호
• /
• pp.329-333
• /
• 2003

The high-temperature oxidation behavior of Ti39Al-10V alloy that consisted primarily of $\beta$-Ti, ${\gamma}$-TiAl, and $\alpha_2$ $-Ti_3$Al phases was studied. The relatively thick and porous oxide scales formed consisted primarily of an outermost, thin TiO$_2$ layer, and an outer, thin $Al_2$$O_3$-rich layer, and an inner, very thick (TiO$_2$, $Al_2$$O_3$) mixed layer. Vanadium was present uniformly throughout the oxide scale. The formation and subsequent evaporation of V-oxides such as VO, $VO_2$, and $V_2$O$_{5}$ deteriorated oxidation resistance and scale adherence of the TiAl alloy significantly.y.

• 한국분말재료학회지
• /
• 제16권1호
• /
• pp.28-32
• /
• 2009

The activation temperatures and hydrogen sorption rates of $Ti_{80-X}Zr_{20}V_X$ alloys were evaluated at room temperature. The alloy powders were prepared by arc melting and then hydride-dehydride(HDH) process. The alloy powders were apt to activate by increase of vanadium in Ti-Zr-V alloys. The easy activation was explained in terms of surface oxygen content which decreased with increase of vanadium on Ti-Zr-V alloys.

• 한국수소및신에너지학회논문집
• /
• 제12권1호
• /
• pp.39-50
• /
• 2001

Vanadium based solid solution alloys have been studied as a potential negative electrode of Ni/MH battery due to their high hydrogen storage capacity. In order to improve the kinetic property of V-Ti alloy in KOH electrolyte, the ball-milling process with Ni, which has a catalytic effect of hydrogen absorption/desorption, was carried out to modify the surface properties of V-Ti-Cr alloys with high hydrogen storage capacity. Moreover, to overcome the problem of poor cycle life, V-Ti alloy substituted by Cr, V0.68 Ti0.20 Cr0.12, has been developed showing a good cycle performance (keeping about 80 % of initial discharge capacity after 200 cycles). The cycle life of surface-modified V0.68 Ti0.20 Cr0.12 alloy was improved by suppressing the formation of TiO2 layer on the alloy surface while decreasing the amount of dissolved vanadium in the KOH electrolyte. In order to promote the effect of Ni coating on the surface property of V0.68 Ti 0.20 Cr 0.12 alloy by ball-milling, filamentary-typed Ni, which has higher surface coverage area than sphere-typed Ni was used as a surface modifier. Consequently, the surface-modified V0.68 Ti0.20 Cr0.12 alloy electrode showed a improved discharge capacity of 460 mAh/g.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2011년도 제40회 동계학술대회 초록집
• /
• pp.188-188
• /
• 2011

Recently, scaling down of ULSI (Ultra Large Scale Integration) circuit of CMOS (Complementary Meta Oxide Semiconductor) based electronic devices, the electronic devices, become much faster and smaller size that are promising property of semiconductor market. However, very narrow interconnect line width has some disadvantages. Deposition of conformal and thin barrier is not easy. And metallization process needs deposition of diffusion barrier and glue layer for EP/ELP deposition. Thus, there is not enough space for copper filling process. In order to get over these negative effects, simple process of copper metallization is important. In this study, Cu-V alloy layer was deposited using of DC/RF magnetron sputter deposition system. Cu-V alloy film was deposited on the plane SiO2/Si bi-layer substrate with smooth surface. Cu-V film's thickness was about 50 nm. Cu-V alloy film deposited at $150^{\circ}C$. XRD, AFM, Hall measurement system, and AES were used to analyze this work. For the barrier formation, annealing temperature was 300, 400, $500^{\circ}C$ (1 hour). Barrier thermal stability was tested by I-V(leakage current) and XRD analysis after 300, 500, $700^{\circ}C$ (12 hour) annealing. With this research, over $500^{\circ}C$ annealed barrier has large leakage current. However vanadium-based diffusion barrier annealed at $400^{\circ}C$ has good thermal stability. Therefore thermal stability of vanadium-based diffusion barrier is desirable for copper interconnection.

• 한국주조공학회지
• /
• 제11권6호
• /
• pp.455-462
• /
• 1991

The formation of brittle intermetallic compound such as $VAl_3$ tends tp lower the toughness of V-Al alloys. Also, due to the high melting point of vanadium, it is difficult to make that alloy by previous ingot metallurgy method. To depress the technique has been adopted. The effect of particle size and milling time on the phase has been thoroughly studied. For mechanical alloying, SPEX mixed/mill has been used. The milling time and the composition of V and Al are varied to find the optimum condition of forming amorphous phase. The X-Ray Diffrection pattern, microstructure detection, microhandess test, experiments are carried out to analyze MA product. When the final step is reached, no lamellar-structure is detected. The steady state condition is observed after 8 hours and 10 hours milling for 15wt.%Al and 30wt.%Al alloy, respectively. The microhardness continuously increases up to 10 hours after then it remains constant.

• Transactions on Electrical and Electronic Materials
• /
• 제9권2호
• /
• pp.47-51
• /
• 2008

In this paper, thermal stability of Nickel silicide formed on p-type silicon wafer using Ni-V alloy film was studied. As compared with pure Ni, Ni-V shows better thermal stability. The addition of Vanadium suppresses the phase transition of NiSi to $NiSi_2$ effectively. Ni-V single structure shows the best thermal stability compared with the other Ni-silicide using TiN and Co/TiN capping layers. To enhance the thermal stability up to $650^{\circ}C$ and find out the optimal thickness of Ni silicide, different thickness of Ni-V was also investigated in this work.

• 한국재료학회지
• /
• 제8권10호
• /
• pp.969-974
• /
• 1998

Fe 계 합금의 적층결함에너지를 감소시키는 거승로 알려진 vanadium이 Fe-20Cr-1.7C-1Si합금의 미세조직과 고온 마모저항성에 미치는 영향에 대하여 조사하였다. Fe-20Cr-1.7C-1Si-xV (x=0, 1, 3, 6, 10wt.%)조성에서 오스테나이트 기지상을 유지하면서 첨기될 수 있는 V의 최대 첨가량은 약 3wt.%이었으며 오스테나이트 기지상을 갖는 합금은 상온에서 낮은 적층결함에너지와 $\gamma->\alpha$ 변형유기 상변태에 의해 페라이트 합금보다 높은 마모저항성을 보인 것으로 생각된다.$225^{\circ}C$에서 $\alpha$ 생성량도 많은 것으로 보다 V은 Fe-20Cr-1.7C-1Si 합금의 온도에 따른 적층결함에너지 증가율를 억제하고 Md온도도 증가시킴으로써 고온 마모저항성을 증가시키는 것으로 생각된다.

• 멤브레인
• /
• 제21권4호
• /
• pp.345-350
• /
• 2011

보론이 도프된 바나듐 합금 분리막은 아직까지 연구된 적이 없다. 본 연구에서는 팔라듐이 코팅된 새로운 $V_{99.8}B_{0.2}$ 조성의 합금 분리막을 합성하여 수소 투과 특성 및 화학적 안정성에 대하여 연구를 수행하였다. 순수 수소, 수소와 이산화탄소의 혼합가스를 $400^{\circ}C$, 절대압력 1.0~3.0 bar에서 공급하여 수소 투과 특성을 알아보았다. 순수 수소를 공급하여 측정한 결과 0.5 mm 두께의 분리막은 최대 $48.5mL/min/cm^2$의 투과량을 보였다. 본 연구 결과는 수성가스 전이반응(WGS)에서 생성된 수소를 분리할 수 있는 비 팔라듐계 수소 분리막의 합성에 새로운 방향을 제시하고 있다.