• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.157-158
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• 2006

$CdS_{0.69}Se_{0.31}$ single crystal grown by sublimation method. Hall effect measurement were carried out by the Van der Pauw method. The measurement values under the temperature were found to be carrier density $n\;=\;1.95\;{\times}\;10^{23}m^3$, Hall coefcient $RH\;=\;-3.21\;{\times}\;10^{-5}m^3/c$, conductivity ${\sigma}\;=\;362.41\;{\Omega}^{-1}m^{-1}$, and Hall mobility ${\mu}\;=\;1.16\;{\times}\;10^{-2}m^2/v.s$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.1
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• pp.1-5
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• 2000

Optical and electrical properties of GaSe:Er\ulcorner single crystals grown by the Bridgenman technique have been investigated by using optical absorption and h\Hall-effect measurement system. The Hall coefficients were mea-sured by using a high impedance electrometer in the temperature range from 360K to 150K. The temperature dependence of hole concentration show the characteristic of a partially compensated p-type semiconductor. Carrier density(N\ulcorner) of GaSe doped with Erbium was measured about 3.25$\times$10\ulcorner [cm\ulcorner] at temperature 300K, which was higher than undoped specimen. Photon energy gap (E\ulcorner) of GaSe:Er\ulcorner specimen was measured about 1.79eV.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.77-78
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• 2008

ZnO thin films were deposited on glass substrates by pulsed laser deposition (PLD) at various oxygen pressures. We observed structural, electrical and optical properties of ZnO films. Structural properties were analysed by XRD and FE-SEM. Electrical properties for applications of transparent thin film transistors (TTFTs) were measured by hall measurement using van der pauw methods at room temperature. In order to apply in transparent devices, we measured transmittance, and optical bandgap energy was calculated by Tauc's equation. The results showed that ZnO films deposited at 200mTorr oxygen pressure were applicable to channel layers of transparent TFTs. It had high hall mobilities ($52.92cm^2$/V-s) and suitable transmittance at visible wavelength region (above 80%).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04b
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• pp.51-55
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• 2004

$CdS_{0.69}Se_{0.31}$ single crystal grown by sublimation method. Hall effect measurement were carried out by the Van der Pauw method. The measurement values under the temperature were found to be carrier density $n=1.95{\times}10^{23}m^{-3}$, Hall coeffcient $RH=3.21{\times}10^{-5}m^3/c$, conductivity ${\sigma}=362.41{\Omega}^{-1}m^{-1}$, and Hall mobility ${\mu}=1.16{\times}10^{-2}m^2/v.s.$ Heterojunction solar cells of $n-CdS_{0.69}Se_{0.31}/p-Cu_{2-x}S_{0.69}Se_{0.31}$ were fabricated by the substitution reaction. The open-circuit voltage, short-circuit currint density, fill factor and power conversion efficiency of $n-CdS_{0.69}Se_{0.31}/p-Cu_{2-x}S_{0.69}Se_{0.31}$ heterojunction solar cell under $80mW/cm^2$ illumination were found to be 0.41V, $19.5mA/cm^2$, 0.75 and 9.99%, respectivity.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.106-106
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• 2009

Al-doped ZnO (AZO) thin films were grown on glass substrates by co-sputtering at room temperature. We made ZnO and Al target and ZnO:Al film is deposited with sputter which has two RF gun source. The Al content was controlled by varying Al RF power and effect of Al contents on the properties of ZnO:Al film was investigated. Crystallinity and orientation of the ZnO:Al films were investigated by X-ray diffraction (XRD), surface morphology of the ZnO:Al films was observed by atomic force microscope. Electrical properties of the ZnO:Al films were measured at room temperature by van der Pauw method and hall measurement. Optrical properties of ZnO:Al films were measured by UV-vis-NIR spectrometer.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.695-695
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• 2013

양단간의 온도차를 이용한 열전 발전 및 펠티어 효과를 이용한 열전냉각 소자는 전기와 열의 직접적인 변환으로 활용도가 높아 차세대 에너지 연구 분야로 각광 받고 있다. 열전 소자의 성능 척도는 성능지수 Z (Figure of Merit)로 나타내며, Seebeck 계수 및 전기전도도, 열전도도의 관계로 주어지게 되고 재료의 물성치가 소자의 성능에 큰 영향을 주게 된다. 따라서, 열전재료의 성능을 높이는 연구가 활발히 진행되어 왔으며, 최근 에너지 밴드 구조를 조절하여 Seebeck계수의 향상을 시도하는 연구가 많이 진행되고 있다. 이는 페르미 레벨근처에 도핑 된 원자들이 Density of states에 추가로 준위를 형성하여 Seebeck 계수 향상을 가능하게 한다. 본 연구에서는 상온용 열전 물질인 $Bi_2Te_3$에 Iodine 도핑을 통한 열전 성능 변화를 고찰하고자 한다. $Bi_2Te_3$는 유기금속 화합물 증착 방법으로 성장하였고 기판으로 $4^{\circ}$기울어진 GaAs를 사용 하였다. 전기적 특성은 Seebeck 측정 및 Van der Pauw법에 의한 Hall measurement 방법으로 분석하였다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.11a
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• pp.95-98
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• 1999

ZnO thin films on (001) sapphire substrates have been deposited by pulsed laser deposition technique using a Nd:YAG laser with the wavelength of 355 nm. In order to investigate the effect of the deposition conditions on the properties of ZnO thin films at an oxygen pressure of 350 mTorr, the experiment has been Performed at various substrate temperatures in the range of 20$0^{\circ}C$ to $700^{\circ}C$. According to XRD, (002) textured ZnO films of high crystalline quality have been obtained and the intensity of UV emission was the highest at 40$0^{\circ}C$ substrate temperature.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.4
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• pp.202-209
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• 2002

The stochiometric mix of evaporating materials for the $CuInSe_2$single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $CuInSe_2$compound crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $620^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuInSe_2$single crystal thin films measured from Hall effect by van der Pauw method. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the $CuInSe_2$single crystal thin film, we have found that the values of spin orbit splitting $\Delta$So and the crystal field splitting $\Delta$Cr. From the photoluminescence measurement on $CuInSe_2$single crystal thin film, we observed free exciton ($E_x$) existing only high quality crystal and neutral bound exciton ($A^{\circ}$, X) having very strong peak intensity. Then, the full-width-at-half-maximum (FWHM) and binding energy of neutral donor bound exciton were 7 meV and 5.9 meV, respectivity. By haynes rule, an activation energy of impurity was 59 meV.

• Journal of Sensor Science and Technology
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• v.10 no.6
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• pp.328-337
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• 2001

The stochiometric mix of evaporating materials for the $CdGa_2Se_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $CdGa_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $630^{\circ}C$ and $420^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CdGa_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method are $8.27{\times}10^{17}cm^{-3}$, $345\;cm^2/V{\cdot}s$ at 293 K, respectively. From the photocurrent spectrum by illumination of perpendicular light on the c-axis of the $CuInSe_2$ single crystal thin film, we have found that the values of spin orbit splitting ${\Delta}So$ and the crystal field splitting ${\Delta}Cr$ were 106.5 meV and 418.9 meV at 10 K, respectively. From the photoluminescence measurement on $CdGa_2Se_4$ single crystal thin film, we observed free excition ($E_x$) existing only high quality crystal and neutral bound exiciton ($D^{\circ}$, X) having very strong peak intensity. Then, the full-width-at -half-maximum(FWHM) and binding energy of neutral donor bound excition were 8 meV and 13.7 meV, respectivity. By Haynes rule, an activation energy of impurity was 137 meV.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.239-242
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• 2004

A stoichiometric mixture of evaporating materials for $CdIn_2S_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $CdIn_2S_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by hot wall epitaxy(HWE) system. The source and substrate temperatures were $630^{\circ}C$ and $420^{\circ}C$ respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of $CdIn_2S_4$ single crystal thin films measured from Hall effect by van der Pauw method are $9.01{\times}10^{16}\;cm^{-3}$ and $219\;cm^2/V{\cdot}s$ at 293 K, respectively. From the optical absorption measurement, the temperature dependence of energy band gap on $CdIn_2S_4$ single crystal thin films was found to be $E_g(T)\;=\;2.7116\;eV\;-\;(7.74{\times}10^{-4}\;eV)T^2/(T+434)$. After the as-grown $CdIn_2S_4$ single crystal thin films was annealed in Cd-, S-, and In-atmospheres, the origin of point defects of $CdIn_2S_4$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K.