• Journal of the Mineralogical Society of Korea
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• v.17 no.1
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• pp.75-83
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• 2004

Blackening on stone monuments is serious problem, because it is not only aesthetically unattractive, but also an important process in stone deterioration. Black surface layers contain often a large amounts of iron compound. Therefore it is assumed that besides another elements the iron have influence on blackening of surface. After the samples of black surface layers were collected from the stone monuments (Museumsinsel) in Berlin, Germany, especially in this study has been used Mossbauer spectroscopy in order to determine the valence and chemical composition of iron. Mineralogical and chemical analyses were carried out X-ray diffractormetry and X-ray fluorescence method on the black surface layer's samples and original stone samples. The origin of Iron compound in the black surface provides the important clue for the conservation work of stone monuments, like removing of black surface. To find it, black surface layer on white sandstone -it contains very small amount of iron compound- was compared with that on the red sandstone (Fe contains very small amount of iron compound- was compared with that on the red sandstone (Fe abundant). As a results, it is assumed that the iron in black layer on white sandstone is originated mainly from a surrounding environmental material and for the iron in black layer on the red sandstone is responsible the original stone. Even if black surface layer was removed from the red sandstone, some other conservation method should be studied beyond removing of black surface layer, because the iron can move continuously from the inner zone of original stone to surface area.

• Journal of the Korean Chemical Society
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• v.26 no.5
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• pp.265-273
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• 1982

The effect of ${\pi}$ bonds on the calculated dipole moments for square planar and tetrahedral [M(II)$O_2S_2$]] type complexes has been investigated by two different approaches. One is the approximate molecular orbital method based on the assumption that the mixing coefficient CM of the valence basis sets for the central metal ion and the appropriate ligand orbitals is equal for all ${\sigma}$ and ${\pi}$ bonding molecular orbitals. The other is the more refined calculation based on the semiempirical LCAO-MO method. If ${\sigma}$ bonds only are assumed to be formed, the calculated dipole moments for square planar and tetrahedral complexes are lower than those of the experimental values. If the contribution of ${\pi}$ bonds to the calculated dipole moments are fully considered, the calculated dipole moments for both square planar and tetrahedral [M(II)$O_2S_2$]] type complexes are higher than the experimental values. However if ${\pi}$ bonds are assumed to be delocalzed, the calculated dipole moments for tetrahedral [M(II$O_2S_2$]] type complexes fall in the range of the experimental values, but those for square planar complexes deviate from the experimental values. These results suggest that [M(II)$O_2S_2$]] type complexes may have the tetrahedral structure in inert solvent solution. This structure is in agreement with the experimental one. The calculated dipole moments for tetrahedral [M(II)$O_2S_2$]] type complexes indicate that the contribution of ${\pi}$ bonds to the calculated dipole moments may not be neglected.

• Journal of the Korean Chemical Society
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• v.35 no.6
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• pp.617-624
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• 1991

Nonstoichiometric solid solutions of $Y_{1-x}A_xFeO_{3-y}$ (A = Ca, Sr) systems with perovskite structure were prepared for x = 0.00, 0.25, 0.50, 0.75 and 1.00 at 1200$^{\circ}C$ under atmospheric pressure, respectively. Crystallographic structures of the solid solutions of all compositions have been determined by the analysis of X-ray diffraction patterns. Reduced lattice volume of the $Y_{1-x}Ca_xFeO_{3-y}$ system was decreased with increasing x value and that of the $Y_{1-x}Sr_xFeO_{3-y}$ system was increased with increasing the x value. The mole ratios of $ Fe^{4+}$ to $ Fe^{3+}$, ${\tau}$, values in the solid solutions have been determined by Mohr salt's method of analysis and then the mixed valency was identified by Mossbauer spectroscopic analysis at 298 K. The y values were calculated from the x and ${\tau}$, and then nonstoichiometric chemical formulas were fixed. The conduction mechanism could be explained by hopping model of the conduction electrons between the mixed valence states.

• The Journal of the Petrological Society of Korea
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• v.10 no.3
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• pp.202-211
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• 2001

Luminescence is a physical phenomenon exhibited by many non-conducting, crystalline materials, such as quartz and feldspar. Within the crystals, energy absorbed from ionising radiation frees electrons to move through the crystal lattice and some are trapped at defects in the lattice. Observable luminescence is produced by electrons, released from traps by stimulation by absorption of light, which recombine with lattice defects which act as luminescence centers - optically stimulated luminescence (OSL). In a similar way to thermoluminescence(TL) dating, controlled measurement of the OSL signal can provide a means of determining the time since the last exposure of a layer of sediment to sunlight, the age of the sediment. However, whereas in the thermoluminescence dating of sediment only part of the latent thermoluminescence signal is bleached by sunlight as the sediment is deposited and allowance must be made during the laboratory measurements for the light insensitive component, optically induced luminescence dating has the advantage of working only with light sensitive traps in the crystal. Determination of the time since deposition of Quaternary sediment samples from the OSL of quartz grains using blue light was performed. A series of experiments and recent developments relating OSL dating are described, beginning by identifying the features which make OSL signals suitable for the development of dating method. Additionally, there are suggestions as to future research for obtaining reliable ages and a comment on current best practice on procedures, with the dating results of Quaternary sediment.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.362-362
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• 2014

Atomic layer deposition (ALD) can be regarded as a special variation of the chemical vapor deposition method for reducing film thickness. ALD is based on sequential self-limiting reactions from the gas phase to produce thin films and over-layers in the nanometer scale with perfect conformality and process controllability. These characteristics make ALD an important film deposition technique for nanoelectronics. Tantalum pentoxide ($Ta_2O_5$) has a number of applications in optics and electronics due to its superior properties, such as thermal and chemical stability, high refractive index (>2.0), low absorption in near-UV to IR regions, and high-k. In particular, the dielectric constant of amorphous $Ta_2O_5$ is typically close to 25. Accordingly, $Ta_2O_5$ has been extensively studied in various electronics such as metal oxide semiconductor field-effect transistors (FET), organic FET, dynamic random access memories (RAM), resistance RAM, etc. In this experiment, the variations of chemical and interfacial state during the growth of $Ta_2O_5$ films on the Si substrate by ALD was investigated using in-situ synchrotron radiation photoemission spectroscopy. A newly synthesized liquid precursor $Ta(N^tBu)(dmamp)_2$ Me was used as the metal precursor, with Ar as a purging gas and $H_2O$ as the oxidant source. The core-level spectra of Si 2p, Ta 4f, and O 1s revealed that Ta suboxide and Si dioxide were formed at the initial stages of $Ta_2O_5$ growth. However, the Ta suboxide states almost disappeared as the ALD cycles progressed. Consequently, the $Ta^{5+}$ state, which corresponds with the stoichiometric $Ta_2O_5$, only appeared after 4.0 cycles. Additionally, tantalum silicide was not detected at the interfacial states between $Ta_2O_5$ and Si. The measured valence band offset value between $Ta_2O_5$ and the Si substrate was 3.08 eV after 2.5 cycles.

• Korean Journal of Materials Research
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• v.11 no.10
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• pp.889-894
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• 2001

2wt% $Al_2O_3-doped$ ZnO (AZO) thin films were deposited on sapphire (0001) single crystal substrate by parellel type rf magnetron sputtering at 55$0^{\circ}C$. The as-grown AZO thin films was polycrystalline and showed only broad deep defect-level photoluminescence (PL). In order to examine the change of PL property, AZO thin films were annealed in $N_2$ (N-AZO) and $H_2$ (H-AZO) at the temperature of $600^{\circ}C$~$1000^{\circ}C$ through rapid thermal annealing. After annealed at $800^{\circ}C$, N-AZO shows near band edge emission (NBE) with very small deep-level emission, and then N-AZO annealed at $900^{\circ}C$ shows only sharp NBE with 219 meV FWHM. In Comparison with N-AZO, H-AZO exhibits very interesting PL features. After $600^{\circ}C$ annealing, deep defect-level emission was quire quenched and NBE around 382 nm (3.2 eV) was observed, which can be explained by the $H_2$passivation effect. At elevated temperature, two interesting peaks corresponding to violet (406 nm, 3.05 eV) and blue (436 nm, 2.84 eV) emission was firstly observed in AZO thin films. Moreover, peculiar PL peak around 694 nm (1.78 eV) is also firstly observed in all the H-AZO thin films and this is believed good evidence of hydrogenation of AZO. Based on defect-level scheme calculated by using the full potential linear muffin-tin orbital (FP-LMTO), the emission 3.2 eV, 3.05 eV, 3.84 eV and 1.78 eV of H-AZO are substantially deginated as exciton emission, transition from conduction band maximum to $V_{ Zn},$ from $Zn_i$, to valence band maximum $(V_{BM})$ and from $V_{o} to V_BM}$, respectively.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.17 no.2
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• pp.307-314
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• 2016

This study empirically validate the impacts of WOM information characteristics on the WOM effect in accordance with SNS media due to the increased the WOM role under SNS. The key results showed that the more vivid, negative, and objective WOM information was, the more positive impacts on the intention to adopt information. In addition, the intention to adopt information had a positive impact on the re-WOM intention. Second, there was no significant difference between Facebook and Blog groups regarding the impacts of the WOM information characteristics on the WOM effect. This can be inferred from the fact that consumers recognize all SNS media as a single online medium regardless of their characteristics in the process of accepting and spreading information. Based on these results, this research drew the following implications. It conceptualized the information characteristics factors that influence the online information acceptance process and the relationship with WOM effects by focusing on SNS and high-tech products that are rapidly emerging. This study is also significant because it attempted to expand the characteristics of WOM information and WOM effects to Facebook and blogs, which are SNS media, and proposed a future research direction.

• Korean Journal of Cognitive Science
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• v.26 no.3
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• pp.301-322
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• 2015

This study examined the effect of emotional sounds on satisfaction of search (SOS). SOS occurs when detection of a target results in a lesser chance of finding subsequent targets when searching for an unknown number of targets. Previous studies have examined factors that may influence the phenomenon, but the effect of emotional sounds is yet to be identified. Therefore, the current study investigated how emotional sound affects magnitude of the SOS effect. In addition, participants' eye movements were recorded to determine the source of SOS errors. The search display included abstract T and L-shaped items on a cloudy background and positive and negative sounds. Results demonstrated that negative sounds produced the largest SOS effect by definition, but this was due to superior accuracy in low-salient single target trials. Response time, which represents efficiency, was consistently faster when negative sounds were provided, in all target conditions. On-target fixation classification revealed scanning error, which occurs because targets are not fixated, as the most prominent type of error. These results imply that the two dimensions of emotion - valence and arousal - interactively affect cognitive performance.

• Journal of the Korean Magnetics Society
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• v.6 no.2
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• pp.67-72
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• 1996

The crystallographic and magnetic properties of the ferrimagnetic $CoFe_2O_4$ have been studied by X-ray and Mossbauer measurements. The crystal structure is found to be cubic spinel structure with the lattice constant $a_{0}=8.381{\pm}0.005{\AA}\;and\;a_{0}=8.391{\pm}0.005{\AA}$ for slow-cooled and quenched CoFeZ04' respectively. Mossbauer spectra of $CoFe_2O_4$ have been taken at various temperatures ranging from 13 to 780 K. The isorrer shifts indicate that the valence states of the Fe ions for tetrahedral(A) and octahedral(B) sites have ferric character. Debye temperatures for the A and B sites are found to be ${\theta}_A=734{\pm}5K\;and\;{\theta}_B=248{\pm}5K$ for slow-cooled and ${\theta}_A=531{\pm}5K\;and\;{\theta}_B=197{\pm}5K$ for quenched, respectively. Atomic migration from the A to the B sites starts near 400 K and 350 K for slow-cooled and quenched $CoFe_2O_4$, respectively, am increases rapidly with increasing temperature to such a degree that about 69 % for slow-cooled and 91 % for quenched of the ferric ions on the A sites have rmved over to the B sites at 700 K.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.347-347
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• 2012

Nickel Oxide (NiO) is a transition metal oxide of the rock salt structure that has a wide band gap of 3.5 eV. It has a variety of specialized applications due to its excellent chemical stability, optical, electrical and magnetic properties. In this study, we concentrated on the application of NiO thin film for transparent conducting oxide. The energy band structure, electronic and optical properties of Nickel Oxide (NiO) thin films grown on Si by using electron beam evaporation were investigated by X-Ray Photoelectron Spectroscopy (XPS), Reflection Electron Energy Loss Spectroscopy (REELS), and UV-Spectrometer. The band gap of NiO thin films determined by REELS spectra was 3.53 eV for the primary energies of 1.5 keV. The valence-band offset (VBO) of NiO thin films investigated by XPS was 3.88 eV and the conduction-band offset (CBO) was 1.59 eV. The UV-spectra analysis showed that the optical transmittance of the NiO thin film was 84% in the visible light region within an error of ${\pm}1%$ and the optical band gap for indirect band gap was 3.53 eV which is well agreement with estimated by REELS. The dielectric function was determined using the REELS spectra in conjunction with the Quantitative Analysis of Electron Energy Loss Spectra (QUEELS)-${\varepsilon}({\kappa},{\omega})$-REELS software. The Energy Loss Function (ELF) appeared at 4.8, 8.2, 22.5, 38.6, and 67.0 eV. The results are in good agreement with the previous study [1]. The transmission coefficient of NiO thin films calculated by QUEELS-REELS was 85% in the visible region, we confirmed that the optical transmittance values obtained with UV-Spectrometer is the same as that of estimated from QUEELS-${\varepsilon}({\kappa},{\omega})$-REELS within uncertainty. The inelastic mean free path (IMFP) estimated from QUEELS-${\varepsilon}({\kappa},{\omega})$-REELS is consistent with the IMFP values determined by the Tanuma-Powell Penn (TPP2M) formula [2]. Our results showed that the IMFP of NiO thin films was increased with increasing primary energies. The quantitative analysis of REELS provides us with a straightforward way to determine the electronic and optical properties of transparent thin film materials.