• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.129.2-129.2
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• 2013

Electron injection enhancement at OLED (organic light-emitting diodes) cathode side has mostly been achieved by insertion of a low work function layer between metal electrode and emissive layer. We investigated the interfacial chemical reactions and electronic structures of alkaline-earth metal (Ca, Ba)/Alq3 [tris(8-hydroxyquinolinato)aluminium] and Ca/BaF2/Alq3 using in-situ X-ray & ultraviolet photoelectron spectroscopy. The alkaline-earth metal deposited on Alq3 generates two energetically separated gap states in sequential manner. This phenomenon is explained by step-by-step charge transfer from alkali-earth metal to the lowest unoccupied molecular orbital (LUMO) states of Alq3, forming new occupied states below Fermi level. The BaF2 interlayer initially prevents from direct contact between Alq3 and reactive Ca metal, but it is dissociated into Ba and CaF2. However, as the Ca thickness increases, the Ca penetrates the interlayer to directly participate in the reaction with underlying Alq3. The influence of the multiple gap state formation by the interfacial chemical reaction on the OLED performance will be discussed.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.214.1-214.1
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• 2013

Tetra-ethoxysilane (TEOS)은 일반적으로 저온 게이트 산화막의 원료 널리 이용되고 있으나 as-deposited 상태에서는 필수적으로 생성된 높은 계면밀도와 고정전하를 제거하기 위하여 수소계면처리, forming gas annealing 등 후처리 공정을 필수적으로 거처야만 한다. 즉 후처리 공정 없이도 일정수준의 계면밀도와 고정전하를 갖을 수 있는 출발물질이 제안되면 산업적 의미를 갖을 것이다. 본 연구에서는 TEOS를 대체할 수 있는 후보재료로써 Tetra-iso-propoxysilane (T-iso-POS)을 제안하였다. T-iso-POS는 iso 구조의 3차원적 특수 구조를 가지므로 더 쉽게 분해 될 수 있어 탄소의 결합을 억제 할 수 있다고 사료된다. 용량 결합형 PECVD (13.56 MHz) 장비를 이용하여 RCA 세정을 실시 한 p-Si (100) 기판위에 TEOS 혹은 T-iso-POS (2 sccm)와 O2를 도입(50 sccm), 플라즈마 전원(20~100 W), 압력(0.1~0.5 torr), 온도 ($170{\sim}400^{\circ}C$), 전극 간 거리 (1~4.5cm)의 조건 하에서 증착하였다. 얻어진 각각의 SiO2 막에 대해, 성장 속도, 2% BHF 용액보다 에칭 속도, IV 특성과 C-V 특성, FT-IR에 의해 화학구조 평가를 실시했다. T-iso-POS원료로 사용하여 TEOS보다 낮은 약 $200^{\circ}C$에서 증착 된 산화막에서 후 처리 없이도 10 MV/cm 이상의 절연 파괴 특성을 나타내는 우수한 게이트 절연막 제작에 성공했다. 그 성장 속도도 약 20 nm/min로 높았다.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.65-65
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• 2010

Extreme ultraviolet lithography (EUVL) is expected to be applied for making patterns below 32 nm in device industry. An ultrathin EUV photoresist (PR) of a few nm in thickness is required to reduce minimum feature size further. Here, we show that pentacene molecular layers can be employed as a new EUV resist for the first time. Dots and lines in nm scale are successfully realized using the new molecular resist. We clearly provide the mechanism for forming the nanopatterns with scanning photoemission microscope (SPEM), EUV interference lithography (EUV-IL), atomic force microscope (AFM), photoemission spectroscopy (PES), etc. The molecular PR has several advantages over traditional polymer EUV PRs; for example, high thermal/chemical stability, negligible outgassing, ability to control the height and width on the nanometer scale, leaving fewer residuals, no need for a chemical development process and thus reduction of chemical waste to make the nanopatterns. Besides, it could be applied to any substrate to which pentacene bonds chemically, such as $SiO_2$, SiN, and SiON, which is of importance in the device industry.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.430.1-430.1
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• 2016

We present the concept of reducible fugitive material that conformally surrounds core Cu nanowire (NW) to fabricate transparent conducting electrode (TCE). Reducing atmosphere can corrodes/erodes the underlying/surrounding layers and might cause undesirable reactions such impurity doing and contamination, so that hydrogen-/forming gas based annealing is impractical to make device. In this regards, we introduce novel reducible shell conformally surrounding indivial CuNW to provide a protection against the oxidation when exposed to both air and solvent. Uniform copper lactate shell formation is readily achievable by injecting lactic acid to the CuNW dispersion as the acid reacts with the surface oxide/hydroxide or pure copper. Cu lactate shell prevents the core CuNW from the oxidation during the storage and/or film formation, so that the core-shell CuNW maintains without signficant oxidation for long time. Upon simple thermal annealing under vacuum or in nitrogen atmosphere, the Cu lactate shell is easily decomposed to pure Cu, providing an effective way to produce pure CuNW network TCE with typically sheet resistance of $19.8{\Omega}/sq$ and optical transmittance of 85.5% at 550 nm. Our reducible copper lactate core-shell Cu nanowires have the great advantage in fabrication of device such as composite transparent electrodes or solar cells.

• Journal of the korean academy of Pediatric Dentistry
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• v.25 no.3
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• pp.539-544
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• 1998

Thermoformed appliance, which has been recently introduced for dental usage, is an appliance made of thermoformed sheets and formed with positive or negative pressure under heat. Thermoplastic material is a kind of plastics and can be repeatedly softened by heat. It is classified into hard elastic foil, hard/soft compound foil and soft elastic foil, including BIOPLAST, BIOCRYL, IMPRELON, etc. It has been developed in 1969 and is available in various thickness, shape and color. There are two types of Vacuum former for thermoplastic materials; the pressure type and suction type. The former is much better than the latter for fabrication of various appliances due to its higher pressure. The authors have applied these appliances to some cases - chin cap, active retainer, individual Fluoride tray, mouth protector, bracket transfer mask, bruxism splint(night guard), Essix appliance - by pressure type Vacuum former($Biostar^{(R)}$). The thermoplastic appliances have numerous advantages such as simple procedure, short working time, clean and transparent product, less objectionable taste. But its outstanding advantage would be its excellent biocompatibility bacause it has no monomer and hence no tissue irritation. Although there is some limitations in its usage, it can be used widely for various purposes especaily for pediatric dentistry.

• 전기의세계
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• v.22 no.5
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• pp.5-11
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• 1973

A new method of forming silicon p$^{+}$-n-n$^{+}$ junctions has been attempted by using the VDH-Implanter (Vacuum Discharge and Heating). Each of p$^{+}$-n and n-n$^{+}$ junctions was formed on both sides of an n-type silicon substrate by means of predeposition of each dopant and their bombarding due to rarefied air ions together with the preheating of the substrate in the implanter. The recifying principle of the p$^{+}$-n-n$^{+}$ junctions is thought to be based on the theory of double injection. The I-V characteristic of the diode has shown that it has a fairly high forward current density with the desirable rise due to vary low voltage though the reverse voltage is a little low on account of the low resistivity of the silicon substrate.n substrate.

• Journal of Powder Materials
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• v.3 no.2
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• pp.97-103
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• 1996

The densification of the compacts of pure Co, Fe+50%.Co and Fe+25% Co sintered under H$_2$ gas or in vacuum was investigated. The effects of AL, Nb, Ti, and V additions on the densification were also studied. The sintered compact of Co was fully-dense when the density of the compact was lower than $Dg^c$. However, above $Dg^{c}$, it was never fully-dense regardless of sintering atmosphere, temperature, and time. The densification of sintered compacts of Fe-50% Co and Fe-25% Co were always incomplete. While the addition of AL made all compacts fully-dense, the addition of Ti was effective for the compacts of Co and Fe-25% Co. V was effective only for the Fe-25% Co. These results tell us that the particle size of Co powder, the amount of Fe, and the amount of additives forming stable oxides play on important role for the complete densification. Therefore it is desirable to reduce or eliminate the equilibrium pressure of H$_{2}$O or CO in isolated pores to obtain a fully-dense sintered compact.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2001.04a
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• pp.303-306
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• 2001

To shorten the delivery time for new products, a lot of prototype plastic parts manufacturing technologies have been developed including injection molding, vacuum casting, thermal forming and so on. Among them, RIM is becoming one of a important soft tooling methods to produce prototype and mass production parts within short time. Further more, as the rapid prototyping technology based tooling methods are playing an important role in prototype manufacturing industry, the utility of the RIM is increasing. But few analyses and mold design techniques have been developed so far due to its chemical and mechanical complexity during the packing and curing process. This research suggests mold gate design criteria to prevent bobbles from molded parts through simplified mathematical model and change of bubble sizes according to the geometry of the molded parts through experiments. Also this study shows the differences of bobble generation mechanism between RIM and injection molding.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 1997.10a
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• pp.211-216
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• 1997

The tungsten disulfide (WS$_2$) solid lubricant was synthesized by two different reaction processes, and the chemical and physical characteristics of synthesized WS$_2$ powder were analyzed in terms of the average particle size, morphology, crystalline phase. The solid WO$_3$ powder with the average size of 0.2 $\mu$m was reacted with CS$_2$ gas flowed with N$_2$ or 96% N$_2$ + 4% H$_2$ forming gas for 36 h and 24 h at 900$\circ$C respectively. In the case of vapour phase transport method, the 3.5 wt% iodine was added as a vapour transport reagent into the composition of tungsten and sulfur powders maintaining a constant molar ratio of W : S = 1 : 2.2. The mixture was then heat treated at 850$\circ$C for 2 weeks in vacuum The reaction product obtained showed the average size of 12 $\mu$m and the hexagonal plate shape of typical solid lubricant with 2H-WS$_2$ crystalline phase.

• 한국신재생에너지학회:학술대회논문집
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• 2009.11a
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• pp.348-348
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• 2009

The conductive coating method is used for various industrial fields. For example, Sputtering process is used to coat ITO layer in LCD or OLED panel manufacture process and fabricate a base layer of substrate of an electric printing device. However, conventional coating processes (beam sputtering, spin coating etc.) has a problems in the industrial manufacturing process. These processes have a very high cost and critical manufacturing environment as a vacuum process. Recently, many researchers have proposed various printing process instead of conventional coating processes. In this paper, we propose an ESD printing process in ITO coating layer and apply to fabricate a conductive coating film. Furthermore, the effect of the nozzle and also the applied voltage on different configuration of the nozzle head was also studied for better understanding of the Electro Static deposition process.