• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.200-200
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• 2010

In recent times, metal oxide semiconductors thin films transistor (TFT), such as zinc and indium based oxide TFTs, have attracted considerable attention because of their several advantageous electrical and optical properties. There are many deposition methods for fabrication of ZnO-based materials such as chemical vapor deposition, RF/DC sputtering and pulsed laser deposition. However, these vacuum process require expensive equipment and result in high manufacturing costs. Also, the methods is difficult to fabricate various multicomponent oxide semiconductor. Recently, several groups report solution processed metal oxide TFTs for low cost and non vacuum process. In this study, we have newly developed solution-processed TFTs based on Ti-related multi-component transparent oxide, i. e., InTiO as the active layer. We propose new multicomponent oxide, Titanium indium oxide(TiInO), to fabricate the high performance TFT through the sol-gel method. We investigated the influence of relative compositions of Ti on the electrical properties. Indium nitrate hydrate [$In(NO^3).xH_2O$] and Titanium isobutoxide [$C_{16}H_{36}O_4Ti$] were dissolved in acetylacetone. Then monoethanolamine (MEA) and acetic acid ($CH_3COOH$) were added to the solution. The molar concentration of indium was kept as 0.1 mol concentration and the amount of Ti was varied according to weighting percent (0, 5, 10%). The complex solutions become clear and homogeneous after stirring for 24 hours. Heavily boron (p+) doped Si wafer with 100nm thermally grown $SiO_2$ serve as the gate and gate dielectric of the TFT, respectively. TiInO thin films were deposited using the sol-gel solution by the spin-coating method. After coating, the films annealed in a tube furnace at $500^{\circ}C$ for 1hour under oxygen ambient. The 5% Ti-doped InO TFT had a field-effect mobility $1.15cm^2/V{\cdot}S$, a threshold voltage of 4.73 V, an on/off current ratio grater than $10^7$, and a subthreshold slop of 0.49 V/dec. The 10% Ti-doped InO TFT had a field-effect mobility $1.03\;cm^2/V{\cdot}S$, a threshold voltage of 1.87 V, an on/off current ration grater than $10^7$, and a subthreshold slop of 0.67 V/dec.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.296-296
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• 2014

We investigate experimentally and theoretically the splitting of surface plasmon (SP) resonance peaks under TE- and TM-polarized illumination. The SP structure at infrared wavelength is fabricated with a 2-dimensional square periodic array of circular holes penetrating through Au (gold) film. In brief, the processing steps to fabricate the SP structure are as follows. (i) A standard optical lithography was performed to produce to a periodic array of photoresist (PR) circular cylinders. (ii) After the PR pattern, e-beam evaporation was used to deposit a 50-nm thick layer of Au. (iii) A lift-off processing with acetone to remove the PR layer, leading to final structure (pitch, $p=2.2{\mu}m$; aperture size, $d=1.1{\mu}m$) as shown in Fig. 1(a). The transmission is measured using a Nicolet Fourier-transform infrared spectroscopy (FTIR) at the incident angle from $0^{\circ}$ to $36^{\circ}$ with a step of $4^{\circ}$ both in TE and TM polarization. Measured first and second order SP resonances at interface between Au and GaAs exhibit the splitting into two branches under TM-polarized light as shown in Fig. 1(b). However, as the incidence angle under TE polarization is increased, the $1^{st}$ order SP resonance peak blue-shifts slightly while the splitting of $2^{nd}$ order SP resonance peak tends to be larger (not shown here). For the purpose of understanding our experimental results qualitatively, SP resonance peak wavelengths can be calculated from momentum matching condition (black circle depicted in Fig. 2(b)), $k_{sp}=k_{\parallel}{\pm}iG_x{\pm}jG_y$, where $k_{sp}$ is the SP wavevector, $k_{\parallel}$ is the in-plane component of incident light wavevector, i and j are SP coupling order, and G is the grating momentum wavevector. Moreover, for better understanding we performed 3D full field electromagnetic simulations of SP structure using a finite integration technique (CST Microwave Studio). Fig. 1(b) shows an excellent agreement between the experimental, calculated and CST-simulated splitting of SP resonance peaks with various incidence angles under TM-polarized illumination (TE results are not shown here). The simulated z-component electric field (Ez) distribution at incident angle, $4^{\circ}$ and $16^{\circ}$ under TM polarization and at the corresponding SP resonance wavelength is shown in Fig. 1(c). The analysis and comparison of theoretical results with experiment indicates a good agreement of the splitting behavior of the surface plasmon resonance modes at oblique incidence both in TE and TM polarization.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.319-320
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• 2012

Large aperture optical modulator called optical shutter is a key component to realize time-of-flight (TOF) based three dimensional (3D) imaging systems [1-2]. The transmission type electro-absorption modulator (EAM) is a prime candidate for 3D imaging systems due to its advantages such as small size, high modulation performance [3], and ease of forming two dimensional (2D) array over large area [4]. In order to use the EAM for 3D imaging systems, it is crucial to remove GaAs substrate over large area so as to obtain high uniformity modulation performance at 850 nm. In this study, we propose and experimentally demonstrate techniques for backside etching of GaAs substrate over a large area having high uniformity. Various methods such as lapping and polishing, dry etching for anisotropic etching, and wet etching ([20%] C6H8O7 : H2O2 = 5:1) for high selectivity backside etching [5] are employed. A high transmittance of 80% over the large aperture area ($5{\times}5mm^2$) can be obtained with good uniformity through optimized backside etching method. These results reveal that the proposed methods for backside etching can etch the substrate over a large area with high uniformity, and the EAM fabricated by using backside etching method is an excellent candidate as optical shutter for 3D imaging systems.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.384.1-384.1
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• 2016

We reported that amorphous silicon (a-Si) thin film provide sample plate exhibiting a multimodality to measure biomolecules by secondary ion mass spectrometry (SIMS) and laser desorption/ionization mass spectrometry (LDI-MS). Kim et al.1 reported that a-Si thin film were suitable to detect small molecules such as drugs and peptides by SIMS and LDI-MS. Recently, bacterial identification has been required in many fields such as food analysis, veterinary science, ecology, agriculture, and so on.2 Mass spectrometry is emerging for identifying and profiling microbiology samples from its advantageous characters of label-free and shot-time analysis. Five species of bacteria - S. aureus, G. glutamicum, B. kurstaki, B. sphaericus, and B. licheniformis - were sampled for MS analysis without lipid extraction in sample preparation steps. The samples were loaded onto the a-Si thin film with a thickness of 100 nm which did not only considered laser-beam penetration but also surface homogeneity. Mass spectra were recorded in both positive and negative ionization modes for more analytical information. High reproducibility and sensitivity of mass spectra were demonstrated in a mass range up to mass-to-charge ratio(m/z) 1200 by applying the a-Si thin film in mentioned above MS. Principle component analysis (PCA) - a popular statistical analysis widely used in data processing was employed to differentiate between five bacterial species. The PCA results verified that each bacterial species were readily distinguished and differentiated effectively from our MS approach. It shows a new opportunity to rapid bacterial profiling and identification in clinical microbiology. More details will be discussed in the presentation.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.194.1-194.1
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• 2015

Transition metal dichalcogenide (TMD) with layered structure, has recently been considered as promising candidate for next-generation flexible electronic and optoelectronic devices because of its superior electrical, optical, and mechanical properties.[1] Scalability of thickness down to a monolayer and van der Waals expitaxial structure without surface dangling bonds (consequently, native oxides) make TMD-based thin film transistors (TFTs) that are immune to the short channel effect (SCE) and provide very high field effect mobility (${\sim}200cm^2/V-sec$ that is comparable to the universal mobility of Si), respectively.[2] In addition, an excellent photo-detector with a wide spectral range from ultraviolet (UV) to close infrared (IR) is achievable with using $WSe_2$, since its energy bandgap varies between 1.2 eV (bulk) and 1.8 eV (monolayer), depending on layer thickness.[3] However, one of the critical issues that hinders the successful integration of $WSe_2$ electronic and optoelectronic devices is the lack of a reliable and controllable doping method. Such a component is essential for inducing a shift in the Fermi level, which subsequently enables wide modulations of its electrical and optical properties. In this work, we demonstrate n-doping method for $WSe_2$ on poly-4-vinylphenol and poly (melamine-co-formaldehyde) (PVP/PMF) insulating layer and adjust the doping level of $WSe_2$ by controlling concentration of PMF in the PVP/PMF layer. We investigated the doping of $WSe_2$ by PVP/PMF layer in terms of electronic and optoelectronic devices using Raman spectroscopy, electrical measurements, and optical measurements.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.221-221
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• 2013

Striving to replace the well known silicon nanocrystals embedded in oxides with solution-processable charge-trapping materials has been debated because of large scale and cost effective demands. Herein, a silicon quantum dot-polystyrene nanocomposite (SiQD-PS NC) was synthesized by postfunctionalization of hydrogen-terminated silicon quantum dots (H-SiQDs) with styrene using a thermally induced surface-initiated polymerization approach. The NC contains two miscible components: PS and SiQD@PS, which respectively are polystyrene and polystyrene chains-capped SiQDs. Spin-coated films of the nanocomposite on various substrate were thermally annealed at different temperatures and subsequently used to construct metal-insulator-semiconductor (MIS) devices and thin film field effect transistors (TFTs) having a structure p-$S^{++}$/$SiO_2$/NC/pentacene/Au source-drain. C-V curves obtained from the MIS devices exhibit a well-defined counterclockwise hysteresis with negative fat band shifts, which was stable over a wide range of curing temperature ($50{\sim}250^{\circ}C$. The positive charge trapping capability of the NC originates from the spherical potential well structure of the SiQD@PS component while the strong chemical bonding between SiQDs and polystyrene chains accounts for the thermal stability of the charge trapping property. The transfer curve of the transistor was controllably shifted to the negative direction by chaining applied gate voltage. Thereby, this newly synthesized and solution processable SiQD-PS nanocomposite is applicable as charge trapping materials for TFT based memory devices.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.215-216
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• 2013

The silicide is a compound of Si with an electropositive component. Silicides are commonly used in silicon-based microelectronics to reduce resistivity of gate and local interconnect metallization. The popular silicide candidates, CoSi2 and TiSi2, have some limitations. TiSi2 showed line width dependent sheet resistance and has difficulty in transformation of the C49 phase to the low resistive C54. CoSi2 consumes more Si than TiSi2. Nickel silicide is a promising material to substitute for those silicide materials providing several advantages; low resistivity, lower Si consumption and lower formation temperature. Nickel silicide (NiSi) nanowire (NW) has features of a geometrically tiny size in terms of diameter and significantly long directional length, with an excellent electrical conductivity. According to these advantages, NiSi NWs have been applied to various nanoscale applications, such as interconnects [1,2], field emitters [3], and functional microscopy tips [4]. Beside its tiny geometric feature, NW can provide a large surface area at a fixed volume. This makes the material viable for photovoltaic architecture, allowing it to be used to enhance the light-active region [5]. Additionally, a recent report has suggested that an effective antireflection coating-layer can be made with by NiSi NW arrays [6]. A unique growth mechanism of nickel silicide (NiSi) nanowires (NWs) was thermodynamically investigated. The reaction between Ni and Si primarily determines NiSi phases according to the deposition condition. Optimum growth conditions were found at $375^{\circ}C$ leading long and high-density NiSi NWs. The ignition of NiSi NWs is determined by the grain size due to the nucleation limited silicide reaction. A successive Ni diffusion through a silicide layer was traced from a NW grown sample. Otherwise Ni-rich or Si-rich phase induces a film type growth. This work demonstrates specific existence of NiSi NW growth [7].

• Asian-Australasian Journal of Animal Sciences
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• v.28 no.7
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• pp.1020-1027
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• 2015

The combined effect of tumbling marination methods (vacuum continuous tumbling marination, CT; vacuum intermittent tumbling marination, IT) and effective tumbling time (4, 6, 8, and 10 h) on the water status and protein properties of prepared pork chops was investigated. Results showed that regardless of tumbling time, CT method significantly decreased the muscle fiber diameter (MD) and significantly increased the total moisture content, product yield, salt soluble proteins (SSP) solubility, immobilized water component (p<0.05) compared with IT method. With the effective tumbling time increased from 4 h to 10 h, the fat content and the MD were significantly decreased (p<0.05), whereas the SSP solubility of prepared pork chops increased firstly and then decreased. Besides, an interactive effect between CT method and effective tumbling time was also observed for the chemical composition and proportion of immobilized water (p<0.05). These results demonstrated that CT method of 8 h was the most beneficial for improving the muscle structure and water distribution status, increasing the water-binding capacity and accelerating the marinade efficiency of pork chops; and thus, it should be chosen as the most optimal treatment method for the processing production of prepared pork chops.

• Korean Journal of Fisheries and Aquatic Sciences
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• v.53 no.2
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• pp.165-173
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• 2020

Fish roe is among the most valuable food resources produced by fisheries. Raw fish roe requires processing for conversion into hygienic, marketable, and consumer-acceptable forms. In this study, to investigate the food compositional characteristics of various types of fish roe, we applied vacuum freeze-drying to prepare fish roe concentrates (FRCs) from roe of Alaska pollack Theragra chlcogramma, bastard halibut Paralichythys olivaceus, and skipjack tuna Katsuwonus pelamis. The FRC yield ranged from 22.7 to 26.7 g/100 g roe. The major constituents of FRCs were protein (65.4-79.6%), moisture (2.8-6.2%), lipids (8.5-18.3%), and ash (4.8-7.2%). Potassium, sulfur, sodium, and phosphorus were the major mineral elements of FRCs, and the major amino acids were aspartic acid (9.0-10.4 g/100 g protein), glutamic acid (13.2-14.5 g/100 g protein), lysine (8.4-8.6 g/100 g protein), and leucine (8.3-9.7 g/100 g protein). Vacuum freeze-dried FRCs differed among fish species in terms of amino acid composition and electrophoresis protein band distribution. Therefore, FRCs are an excellent source of protein nutrition and an appropriate protein fortification material in human foods or animal feed.

• Transactions of the Korean hydrogen and new energy society
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• v.24 no.5
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• pp.367-372
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• 2013

Hydrogen storage as a metal hydride is the most promising alternative because of its relatively large hydrogen storage capacities near room temperature. TiMn2-based C14 Laves phases alloys are one of the promising hydrogen storage materials with easy activation, good hydriding-dehydriding kinetics, high hydrogen storage capacity and relatively low cost. In this work, multi-component, hyper-stoichiometric $Ti_{0.85}Zr_{0.13}(Fe_x-V)_{0.56}Mn_{1.47}Ni_{0.05}$ C14 Laves phase alloys were prepared by a vacuum induction melting for a hydrogen storage tank. Since pure vanadium (V) is quite expensive, the substitution of the V element in these alloys has been tried and some interesting results were achieved by replacing V by commercial ferrovanadium (FeV) raw material. In addition, the melt-spinning process, which was applied to the manufacturing of some of these alloys, could make the plateau slopes much flatter, which resulted in the increase of reversible hydrogen storage capacity. The improvement of sloping properties of melt-spun $Ti_{0.85}Zr_{0.13}(Fe_x-V)_{0.56}Mn_{1.47}Ni_{0.05}$ alloys was mainly attributed to the homogeneity of chemical composition.