한국진공학회:학술대회논문집 (Proceedings of the Korean Vacuum Society Conference)
- 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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- Pages.194.1-194.1
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- 2015
Poly-4-vinylphenol and Poly (melamine-co-formaldehyde)-based Tungsten Diselenide (WSe2) Doping Method
- Nam, Hyo-Jik (School of Electronics and Electrical Engineering, Sungkyunkwan University) ;
- Park, Hyung-Youl (School of Electronics and Electrical Engineering, Sungkyunkwan University) ;
- Park, Jin-Hong (School of Electronics and Electrical Engineering, Sungkyunkwan University)
- 발행 : 2015.08.24
초록
Transition metal dichalcogenide (TMD) with layered structure, has recently been considered as promising candidate for next-generation flexible electronic and optoelectronic devices because of its superior electrical, optical, and mechanical properties.[1] Scalability of thickness down to a monolayer and van der Waals expitaxial structure without surface dangling bonds (consequently, native oxides) make TMD-based thin film transistors (TFTs) that are immune to the short channel effect (SCE) and provide very high field effect mobility (