• Title/Summary/Keyword: Vacuum arc

Search Result 324, Processing Time 0.028 seconds

Study on Cutting Processing Characteristic of Ti alloy (Ti 합금의 절삭 가공특성에 관한 연구)

  • 반재삼;이경원;김규하;조규종
    • Proceedings of the Korean Society of Precision Engineering Conference
    • /
    • 2002.05a
    • /
    • pp.1017-1020
    • /
    • 2002
  • The pure Ti is taken annealing process for one hour at 90$0^{\circ}C$. The pure Ti is sufficient for ASTM B348 Grade2. The rolling mill roll the Ti-8Ta-3Nb(wt%) which became vacuum melting in arc furnace until the length is about 45mm and the thickness is about 6.05mm. Then it is made 6mm$\times$6mm$\times$44mm by wire cutting with EDM and it is made ∮ 6mm by rough cutting with the general purpose lathe. The machining accuracy of implant parts in the dental and medical science are decided by dimension, shpe, straightness, surface roughness. It is difficult to cut for the Ti alloy. It is caused problems of straight degree and surface roughness to the Ti alloy have many cases which length is smaller than diameter in cutting. Total 24 specimens different kind of 4 alloies are used in experiment to gain a cutting property. According to the cutting velocity, cutting depth, cutting temperature, feed and clearance angle experiments are performed. Conclusively it is expected that cutting depth of 0.5mm, feed velocity of 0.07mm/rev and cutting velocity of 80m/min could make a suitable result.

  • PDF

ZnO films grown on GaN/sapphire substrates by pulsed laser deposition

  • Suh, Joo-Young;Song, Hoo-Young;Shin, Myoung-Jun;Park, Young-Jin;Kim, Eun-Kyu
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2010.08a
    • /
    • pp.207-207
    • /
    • 2010
  • Both ZnO and GaN have excellent physical properties in optoelectronic devices such as blue light emitting diode (LED), blue laser diode (LD), and ultra-violet (UV) detector. The ZnO/GaN heterostructure, which has a potential to achieve the cost efficient LED technology, has been fabricated by using radio frequency (RF) sputtering, pyrolysis, metal organic chemical vapor deposition (MOCVD), direct current (DC) arc plasmatron, and pulsed laser deposition (PLD) methods. Among them, the PLD system has a benefit to control the composition ratio of the grown film from the mixture target. A 500-nm-thick ZnO film was grown by PLD technique on c-plane GaN/sapphire substrates. The post annealing process was executed at some varied temperature between from $300^{\circ}C$ to $900^{\circ}C$. The morphology and crystal structural properties obtained by using atomic force microscope (AFM) and x-ray diffraction (XRD) showed that the crystal quality of ZnO thin films can be improved as increasing the annealing temperature. We will discuss the post-treatment effect on film quality (uniformity and reliability) of ZnO/GaN heterostructures.

  • PDF

nBn Based InAs/GaSb Type II Superlattice Detectors with an N-type Barrier Doping for the Infrared Detection

  • Kim, Ha-Sul;Lee, Hun;Hwang, Je-Hwan;Lee, Sang-Jun;Klein, B.;Myers, S.;Krishna, S.
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2014.02a
    • /
    • pp.128.2-128.2
    • /
    • 2014
  • Long-wave infrared detectors using the type-II InAs/GaSb strained superlattice (T2SL) material system with the nBn structure were designed and fabricated. The band gap energy of the T2SL material was calculated as a function of the thickness of the InAs and GaSb layers by the Kronig-Penney model. Growth of the barrier material (Al0.2Ga0.8Sb) incorporated Te doping to reduce the dark current. The full width at half maximum (FWHM) of the 1st satellite superlattice peak from the X-ray diffraction was around 45 arc sec. The cutoff wavelength of the fabricated device was ${\sim}10.2{\mu}m$ (0.12eV) at 80 K while under an applied bias of -1.4V. The measured activation energy of the device was ~0.128 eV. The dark current density was shown to be $1.2{\times}10^{-5}A/cm^2$ at 80 K and with a bias -1.4 V. The responsivity was 1.9 A/W at $7.5{\mu}m$ at 80K and with a bias of -1.9V.

  • PDF

A study on the synthesis and formation behavior of nanostructrued TiN films by metal doping (금속원소 도핑에 따른 초고경도 나노구조 TiN 박막의 합성 및 형성 거동에 관한 연구)

  • 명현식;한전건
    • Journal of the Korean Vacuum Society
    • /
    • v.12 no.3
    • /
    • pp.193-199
    • /
    • 2003
  • Ti-Cu-N and Ti-Ag-N nanocomposite films with various copper and silver contents were synthesized by arc ion plating and magnetron sputtering hybrid system. The structure and mechanical properties of these films were found to be dependant on the copper and silver concentration. The maximum hardness of Ti-Cu-N and Ti-Ag-N films showed approximately 40 ㎬ below 2 at%Me. The role of soft metallic phase in Ti-Me-N nanosturctured films containing one hard and one soft phase is also discussed.

빗각 증착법(Oblique Angle Deposition)으로 코팅된 금속 및 화합물 박막의 특성

  • Yang, Ji-Hun;Park, Hye-Seon;Jeong, Jae-Hun;Song, Min-A;Jeong, Jae-In
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2012.02a
    • /
    • pp.151-151
    • /
    • 2012
  • 빗각 증착법(oblique angle deposition; OAD)을 이용하여 코팅된 알루미늄과 질화 티타늄 박막의 특성을 분석하였다. OAD는 기판과 증발원이 수평하게 위치하는 일반적인 코팅방법과 다르게 기판이 증발원과 수평하게 놓이지 않고 일정한 각으로 기울여 코팅하는 방법을 의미한다. 코팅 시 기판이 증발원과 수평하지 않으면 입사되는 증기가 일정한 각도를 유지하기 때문에 코팅되는 박막의 구조가 달라지고 이로 인해서 물리적 특성도 변하게 된다. 본 연구에서는 음극아크와 스퍼터링을 이용하여 각각 질화 티타늄과 알루미늄을 빗각으로 코팅하여 박막의 미세구조와 물성 변화를 관찰하였다. 스퍼터링을 이용하여 빗각 코팅된 알루미늄의 경우, 박막의 구조가 치밀해지고 표면 조도가 낮아지는 현상이 관찰되었다. 알루미늄 박막의 치밀도와 표면조도 향상은 가시광선 영역의 반사율을 높이는 효과가 있었다. 강판에 알루미늄을 코팅하여 염수분무를 실시한 결과, 치밀한 조직으로 인해서 내식성이 향상되는 결과를 보였다. 음극 아크를 이용하여 빗각 코팅된 질화 티타늄 박막에서 기판과 수직하지 않고 일정한 각도로 기울어진 주상 조직이 관찰되었다. 기판에 수직하게 성장된 질화 티타늄 박막과 비교하여 기울어진 주상 구조의 박막은 경도가 높아지는 특성 변화가 관찰되었다. 빗각 증착법을 이용하여 박막의 조직, 물성 등을 제어할 수 있었다. 박막에 다양한 기능을 부여하는 코팅방법으로 빗각 증착법이 활용될 수 있을 것으로 판단된다.

  • PDF

후면 passivation 박막으로 Rapid Thermal Oxide를 적용한 Local Back Contact Cell 제작에 관한 연구

  • Gong, Dae-Yeong;Park, Seung-Man;Lee, Jun-Sin
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2011.02a
    • /
    • pp.406-406
    • /
    • 2011
  • 최근 결정질 실리콘 태양전지 분야에서는 태양전지의 Voc와 Isc의 증가를 통한 효율 향상을 목적으로 후면 passivation 박막에 대한 연구가 활발하게 진행되고 있다. Local-Back Contact Cell은 최적화된 후면 passivation 박막을 이용한 태양전지 제조방법이다. 본 연구에서는 고효율의 LBC 태양전지 개발을 위해 Rapid Thermal Oxide(RTO)를 이용한 후면 passivation 박막에 screen printing을 이용한 point contact 구조의 LBC 태양전지를 제작하고 그 특성을 분석하였다. 본 연구에 사용된 RTO 박막은 O2와 N2, 2L/min의 조건에서 $850^{\circ}C$에서 3분 동안 열처리하여 성장시켰다. 이렇게 성장된 박막은 3nm의 두께로 형성되어 passivation 효과를 나타내었으며, carrier lifetime 측정 결과 37.8us의 값을 나타냈다. 전면 ARC형성을 위해 RTO 박막 위에 PECVD를 이용하여 SiNx passivation 처리를 하였고, 그 결과 carrier lifetime은 49.1us까지 향상하였다. 후면의 전극 형성을 위해 screen printing 방법으로 Al point contact을 형성하여 local 한 BSF를 형성 시켰으며, 이후 후면 전극 연결을 위한 방법으로 300nm의 두께로 full Al evaporation 공정을 진행 하였다. 결과적으로 RTO 후면 passivation 박막에 Al point contact 형성을 통해 제작된 태양전지는, Suns-Voc 579mV, FF 82.3%, 16.7%의 효율을 달성하였다.

  • PDF

완전화 박막의 구현을 위한 기술적 과제와 도전

  • Jeong, Jae-In;Yang, Ji-Hun;Park, Hye-Seon;Jeong, Jae-Hun;Song, Min-A
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2013.02a
    • /
    • pp.98-98
    • /
    • 2013
  • 완전화 박막이란 사용자가 원하는 용도에 맞게 최적의 성능을 구현하도록 제조된 박막을 의미하며 금속이나 화합물 박막을 제조하되 각종 구조 제어 Tool이나 증착 공정을 변화시켜 나노화와 다층화 또는 치밀화를 통해 구현될 수 있다. 최근 고성능의 증착 및 제어 Tool이 개발되고 빗각증착(Oblique Angle Deposition)이나 스침각 증착(Glancing Angle Deposition) 방법 등의 기술이 개발되면서 사용자 목적에 최적인 박막 소재를 제공하여 User-friendly한 응용을 위한 연구개발이 활발히 진행되고 있다. 완전화 박막 제조에 대한 시도는 1990년대에 일본에서 시작되었다. 일본에서는 산학연이 공동으로 참여하는 NEDO 프로그램을 통해 경질코팅을 이용한 Protective Layer를 제조하여 차단 방식에 의한 내식성 구현 연구를 수행하였다. 유럽에서는 제 7차 European Framework Program (7th FT)을 통해 2007년부터 CORRAL (Corrosion Protection with Perfect Atomic Layer) 프로젝트를 만들어 완전화 박막 연구를 진행하고 있다. 상기 프로젝트는 얇은 자연 산화막이 Bulk의 부식을 방지해주는 것에 착안하여 HIPIMS나 Filtered Arc 또는 ALD 공정을 이용하여 자연 산화막과 유사한 Defect-free 산화막을 제조하여 Barrier형 내식성 박막을 구현하는 것을 목표로 하고 있다. 본 연구에서는 완전화 박막 구현을 위한 연구동향을 파악하고 완전화 박막 제조를 위한 기술적 과제와 몇 가지의 시도에 대한 기초 연구 자료를 소개한다.

  • PDF

X-ray Absorption Near-edge Studies of Au1-xPtx alloys

  • Y.D. Chung;Lim, K.Y.;Lee, Y.S.;C.N.Whang;Park, B.S.;Y.Jeon
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2000.02a
    • /
    • pp.164-164
    • /
    • 2000
  • Since Au-Pt alloys have various atomic structures depending upon composition and annealing temperature, it is very interesting to investigate the electronic structures of alloys. We studied the changes of the electronic structure I the Au-Pt alloys by x-ray absorption near edge spectroscopy (XANES). Two kinds of Au-Pt alloy samples were prepared by arc melting methods and ion-beam-mixing technique. The Pt L2, 3-edge and Au L2, 3-edge X-ray absorption spectra (XPS) were measured with the electron yield mode detector at the 3C1 beam line of the Pohang Light Source (PLS). It was found that there was a substantial decrease in the area of the Pt L2, 3 white lines compared with that of pure Pt. The observed decrease in white line area was attributed to an increase in the number of pure Pt. The observed decrease in white line area was attributed to an increase in the number of 5d-electrons at the Pt site upon alloy formation. However, the Au L2, 3 edge spectra for Au-Pt alloys are all similar to that of pure Au. This implies that the 5d hole count of Au is not changed by alloy formation with Pt.

  • PDF

Surface and Corrosion Properties of Electrolytic Polished 316L Stainless Steel by Double Melting (VIM and VAR)

  • Hyunseung Lee;Gangsan Kim;Seungho Han;Man-Sik Kong;Jung-Yeul Yun;Si Young Chang
    • Journal of Korea Foundry Society
    • /
    • v.43 no.5
    • /
    • pp.223-229
    • /
    • 2023
  • In this study, STS316L produced by a double-melting process involving vacuum induction melting (VIM) and vacuum arc remelting (VAR) was subjected to extrusion and drawing to form a tube and was subsequently electrolytic polished (EP). The grain size of the obtained STS316L without EP was approximately 55 ㎛, with no difference found after EP. The thickness of the EP layer was measured by AES and TEM, showing values of approximately 10 nm and 15 nm, respectively. After EP, the Cr/Fe and CrO/FeO ratios of the passive layer increased from 1.48 to 1.62 and from 2.15 to 2.26, respectively, while the surface roughness decreased significantly from 0.255 to 0.024 ㎛. Consequently, the corrosion rate decreased in both NaCl and HCl solutions after the EP process. Additionally, the amounts of eluted Cr and Fe ions were reduced from 1.2 to 0.8 ppb and 10.3 to 0.8 ppb, respectively. Furthermore, polarization tests revealed that STS316L treated with EP required a lower current density to reach a passive state, indicating that corrosion behavior was retarded.

Growth of vertically aligned carbon nanotubes on a large area Si substrates by thermal chemical vapor deposition

  • Lee, Cheol-Jin;Park, Jung-Hoon;Son, Kwon-Hee;Kim, Dae-Woon;Lyu, Seung-Chul;Park, Sung-Hoon
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2000.02a
    • /
    • pp.212-212
    • /
    • 2000
  • Since the first obserbvation of carbon nanotubes, extensive researches have been done for the synthesis using arc discharge, laser vaporization, and plasma-enhanced chemical vapor deposition. Carbon nanotubes have unique physical and chemical properties and can allow nanoscale devices. Vertically aligned carbon nanotubes with high quality on a large area is particularly important to enable both fundamental studies and applications, such as flat panel displays and vacuum microelectronics. we have grown vertically aligned carbon nanotubes on a large area of Si substrates by thermal chemical vapor deposition using C2H2 gas at 750-950$^{\circ}C$. we deposited catalytic metal on Si susbstrate using thermal evaporation. The nanotubes reveal highly purified surface. The carbon nanotubes have multi-wall structure with a hollow inside and it reveals bamboo structure agreed with base growth model. Figure 1 shows SEM micrograph showing vertically aligned carbon nanotubes whih were grown at 950$^{\circ}C$ on a large area (20mm${\times}$30mm) of Si substrates. Figure 2 shows TEM analysis was performed on the carbon nanotubes grown at 950$^{\circ}C$ for 10 min. The carbon nanotubes are multi-wall structure with bamboo shape and the lack of fringes inside the nanotube indicates that the core of the structure is hollow. In our experiment, carbon nanotubes grown by the thermal CVD indicate base growth model.

  • PDF