• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.91-91
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• 2012

We aim in synthesizing various functional thin films thinner than ~ 10 nm for environmental applications and photovoltaic devices. Atomic layer deposition is used for synthesizing inorganic thin films with a precise control of the film thickness. Several examples about application of our thin films for removing volatile organic compounds (VOC) will be highlighted, which are summarized in the below. 1) $TiO_2$ thin films prepared by ALD at low temperature ($<100^{\circ}C$) show high adsorption capacity for toluene. In combination with nanostructured templates, $TiO_2$ thin films can be used as building-block of high-performing VOC filter. 2) $TiO_2$ thin films on carbon fibers and nanodiamonds annealed at high temperatures are active for photocatalytic oxidation of VOCs, i.e. photocatalytic filter can be created by atomic layer deposition. 3) NiO can catalyze oxidation of toluene to $CO_2$ and $H_2O$ at $<300^{\circ}C$. $TiO_2$ thin films on NiO can reduce poisoning of NiO surfaces by reaction intermediates below $200^{\circ}C$. We also fabricated inverted organic solar cell based on ZnO electron collecting layers on ITO. $TiO_2$ thin films with a mean diameter less than 3 nm on ZnO can enhance photovoltaic performance by reducing electron-hole recombination on ZnO surfaces.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.161-161
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• 2011

Titanium (IV) dioxide (TiO2) is one of the most attractive d-block transition metal functional oxides. Many applications of TiO2 such as dye-sensitized solar cells and photocatalyst have been widely investigated. To utilize solar energy efficiently, TiO2 should be well-aligned with a high surface area and promote the charge separation as well as electron transport. Herein, the TiO2 nanotubes were successfully fabricated by a template-directed method. The electrospun PEO(Polyethylene oxide, Molecular weight, 400k)fibers were used as a soft template for coating with titanium dioxide using an atomic layer deposition (ALD) technique. The deposition was conducted onto a template at 50$^{\circ}C$ by using titaniumisopropoxide [Ti(OCH(CH3)2)4; TTIP] as precursors of TiO2. While the as-deposited TiO2 layers onto PEO fibers were completely amorphous with atomic layer deposition, the TiO2 layers after calcination at 500$^{\circ}C$ for 1 h were properly converted into polycrystalline nanostructured hallow TiO2 nanotube. The TiO2 nanotube with high surface area can be easily handled and reclaimed for use in future applications related to solar cell fabrications.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.339-339
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• 2011

기존의 광학리소그래피방법으로는 나노크기의 패턴을 형성하는데에 있어서 많은 제약이 있으며, 사실상 수십나노크기의 패턴을 형성하는데에는 전자빔리소그래피등 새로운 패턴형성 방법이 요구되고 있다. 블록 공중합체를 이용한 나노 패턴은 서로 다른 화학적 구조를 가지는 고분자들이 공유결합으로 연결되어 있는 분자구조를 이용하여, 하나의 분자 내에 서로 다른 블록들이 상분리를 일으키려는 것과 동시에 이들의 공유결합으로 인해 그 정도가 제한되는 것을 이용하여 라멜라, 실린더, 구 등의 주기적으로 배열된 형태의 구조물을 형성하는 패터닝 기술이다. 블록 공중합체를 이용한 나노크기의 패턴 형성은 열역학적으로 안정적인 구조이며, 대면적으로 구현 할 수 있어서 차세대 소자제작을 위한 제작기술로 많은 관심을 가지고 있다. 하지만 블록공중합체를 이용한 나노패턴 기술은 선행적으로 나노구조체를 결함이 없고, 원하는 형태로 제작 할 수 있는 공정의 확립이 필요하다. 따라서 본 연구에서는, 이러한 블록 공중합체을 이용한 나노패턴을 제조하는 공정에서, 폴리스틸렌과 실리콘 산화물 박막과의 표면반응을 막기 위한 Self-Assembly Monolayers (SAMs) 처리 공정이 패턴 형성에 미치는 영향을 알아보기 위하여 MPTS의 농도 및 처리시간을 변화시켰다. 나노패턴을 분석, 확인하기 위하여 Atomic Force Microscopic (AFM)과 Field Emission Scanning Electron Microscope (FESEM)을 이용하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.313-313
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• 2011

최근, 산화물 반도체를 통한 나노선 연구가 활발히 진행되고 있다. 1차원 나노선은 넓은 표면적을 가지며 다양한 특성을 지녀 미래 nanodevice로의 중요한 building block 소자로의 활용이 가능하다. 본 연구에서는 이종의 나노선을 합성하여 hierarchical nanojunction structure를 제작, 특성을 확인하였다. 이러한 구조는 나노선이 가지는 넓은 표면적의 특성과 동시에, multi-component fuctional nanodevice를 구현하는데에 적합한 구조이다. 본 연구는 텅스텐 기판 위에 고온의 열증착 방식을 이용하여 텅스텐 산화물 나노선을 제작시켜 그 위에 저온의 수열합성을 통한 산화아연 나노선을 제작한 후 향상된 field emission emitter로서의 특성을 살펴보았다. 합성된 텅스텐 산화물 나노선은 quasi-allign된 구조를 가지며, 이러한 구조 위에 ZnO를 스퍼터링하여 seed layer를 형성시키고, 암모니아수와 아연염을 이용한 수열합성법을 통하여 합성된 나노선 위에 nanobranch의 산화아연 나노선을 형성하였다. 이러한 성장특성은 SEM, TEM을 통하여 확인하였고 각각의 특성과 계면을 살펴보았다. 또한 이러한 구조를 이용하여 전계방출특성을 확인하였는데, 약 5.7 eV의 일함수를 갖는 텅스텐 산화물 나노선 위에 더 작은 값의 일함수를 갖는 산화아연 나노선을 합성하여 전계방출특성을 보았으며, 더 향상된 결과를 얻을 수 있었다. 또한 산화아연의 합성방법에 따른 전계방출 특성의 차이도 비교하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.240-240
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• 2010

A multiple alloy metal nano-dots memory using FN tunneling was investigated in order to confirm its structural possibility for future flash memory. In this work, a multiple FePt nano-dots device with a high work function (~5.2 eV) and extremely high dot density (${\sim}\;1.2{\times}10^{13}/cm^2$) was fabricated. Its structural effect for multiple layers was evaluated and compared to one with a single layer in terms of the cell characteristics and reliability. We confirm that MOS capacitor structures with 2-4 multiple FePt nano-dot layers provide a larger threshold voltage window and better retention characteristics. Furthermore, it was also revealed that several process parameters for block oxide and inter-tunnel oxide between the nano-dot layers are very important to improve the efficiency of electron injection into multiple nano-dots. From these results, it is expected that a multiple FePt nano-dots memory using Fowler-Nordheim (FN)-tunneling could be a candidate structure for future flash memory.

• Vacuum Magazine
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• v.3 no.3
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• pp.15-18
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• 2016

In future wearable electronic systems, 3-dimensional (3D) devices have attracted much attention due to their high density integration and low-power functionality. Among 3D devices, gate-all-around (GAA) nanowire transistor provides superior gate controllability, resulting in suppressing short channel effect and other drawbacks in 2D metal-oxide-semiconductor field-effect transistor (MOSFET). Silicon nanowires (SiNWs) are the most promising building block for GAA structure device due to their compatibility with the current Si-based ultra large scale integration (ULSI) technology. Moreover, the theoretical limit for subthreshold swing (SS) of MOSFET is 60 mV/dec at room temperature, which causes the increase in Ioff current. To overcome theoretical limit for the SS, it is crucial that research into new types of device concepts should be performed. In our present studies, we have experimentally demonstrated feedback FET (FBFET) and tunnel FET (TFET) with sub-60 mV/dec based on SiNWs. Also, we fabricated SiNW based complementary TFET (c-TFET) and SiNW complementary metal-oxide-semiconductor (CMOS) inverter. Our research demonstrates the promising potential of SiNW electronic devices for future wearable electronic systems.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.376-376
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• 2012

Semiconductor nanowires (NWs) are future building block for nano-scale devices. Especially, Ge NWs are fascinated material due to the high electrical conductivity with high carrier mobility. It is strong candidate material for post-CMOS technology. However, thermal stability of Ge NWs are poor than conventional semiconductor material such as Si. Especially, when it reduced size as small as nano-scale it will be melted around CMOS process temperature due to the melting point depression. Recently, Graphene have been intensively interested since it has high carrier mobility with single atomic thickness. In addition, it is chemically very stable due to the $sp^2$ hybridization. Graphene films shows good protecting layer for oxidation resistance and corrosion resistance of metal surface using its chemical properties. Recently, we successfully demonstrated CVD growth of monolayer graphene using Ge catalyst. Using our growth method, we synthesized Ge/graphene core/shell (Ge@G) NW and conducted it for highly thermal stability required devices. We confirm the existence of graphene shell and morphology of NWs using SEM, TEM and Raman spectra. SEM and TEM images clearly show very thin graphene shell. We annealed NWs in vacuum at high temperature. Our results indicated that surface melting phenomena of Ge NWs due to the high surface energy from curvature of NWs start around $550^{\circ}C$ which is $270^{\circ}C$ lower than bulk melting point. When we increases annealing temperature, tip of Ge NWs start to make sphere shape in order to reduce its surface energy. On the contrary, Ge@G NWs prevent surface melting of Ge NWs and no Ge spheres generated. Furthermore, we fabricated filed emission devices using pure Ge NWs and Ge@G NWs. Compare with pure Ge NWs, graphene protected Ge NWs show enhancement of reliability. This growth approach serves a thermal stability enhancement of semiconductor NWs.

• Tribology and Lubricants
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• v.11 no.5
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• pp.66-70
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• 1995

In this investigation, a controlled-environment tribological test device has been used to study the friction coefficients of several grades of commercially-available coated and uncoated cemented carbide cutting tools in a dry air environment at different environmental chamber pressures. Tests were run in the block-on-ring configuration. The results suggest that the friction coefficient is sensitive to the level of air present, with a noticeable rise in friction coefficient with decreasing pressure or increasing vacuum level. The uncoated cemented carbide sufaces resulted in the highest friction values, whereas the coated grades yielded somewhat lower values even after the coating was removed. The results suggest the importance of friction control in the design of coatings for metal removal processes.

• The Korean Journal of Pain
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• v.10 no.1
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• pp.21-27
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• 1997

Background : Previous studies have proven beneficial in labor analgesia to use subarachnoid sufentanil(alone or with adjuvant) on parturients in early first stage of labor. We designed this prospective study to evaluate analgesic efficacy and side effects of subarachnoid sufentanil plus bupivacaine in women with cervical dilatation of 7 cm greater. Methods : This was an open-label, nonrandomized trial of 32 parturients in late first stage labor who requested labor analgesia. After signing the consent form each patient received subarachnoid sufentanil (10 ${\mu}g$) and bupivacaine (2.5 mg). Patients were asked to rate their verbal pain score (0-10 scale) before regional anesthesia and 5 minutes after subarachnoid injection, and every 20 minutes thereafter until delivery or request for additional analgesia. Blood pressure, pruritus, Bromage motor block score, mode of delivery and need for supplemental analgesics were recorded. Results : Thirty women were included in the study. Mean pain scores (mean${\pm}$SD) were $8.7{\pm}1.0$ pre-spinal, $0.7{\pm}1.5$ 5 minutes post-injection, and remained less than 5 for 130 minutes after spinal injection. Of 30 patients, 24 had unassisted vaginal delivery, 4 instrumental vaginal delivery (vacuum), and 2 cesarean delivery. Of 28 patients who delivered vaginally, 19 did not require supplemental analgesics and had a delivery pain score of 5 or lower. Blood pressure decreased in three patients after spinal analgesia (p<0.05), which necessitated treatment. The Bromage motor block score was 0 in 26 patients and 1 in 4 patients. Pruritus was noted in 22 patients. Conclusion : Subarachnoid sufentanil-bupivacaine provides rapid analgesia for an effective duration of approximately 130 minutes in parturients in late first stage of labor.

• Archives of Plastic Surgery
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• v.37 no.2
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• pp.182-186
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• 2010

Purpose: Intramuscular stimulation (IMS) shows good results in the treatment of chronic pain patients who did not respond to other treatments such as oral analgesics, trigger point injection, nerve block and epidural steroid injection. But, IMS procedure especially, patients with diabetes mellitus (DM) has sometimes serious problem. So, we present a very rare case of intramuscular abscess in the sternocleiomastoid muscle after IMS with literature review. Methods: A 66 year old male visited our department 7 days after IMS in the neck. His premorbid conditions and risk factors of deep neck infection was DM and old age. Computed tomographic scans of the head and neck region were performed in this patient: signs of deep neck infection, were seen enhanced abscess in the sternocleidomastoid muscle, cellulitis overlying tissue of the neck, and air bubbles involved muscle. Necrotic wound was excised serially and we treated this with the Vacuum-assisted closure (VAC, Kinetics Concepts International, San Antonio, Texas) system device. After appropriately shaping the sponge in the pockets, continuous negative pressure of 125 mmHg was applied. The VAC therapy was utilized for a period of 12 days. Results: We obtained satisfactory results from wide excision, drainage of the abscess with the VAC system, and then primary closure. The postoperative course was uneventful. Results: We suggest that many of the infectious complications may be preventable by strict adherence to aseptic techniques and that some of the other complications may be minimized by refining the techniques with a clear understanding of the medical disorders of patients. And, the refined technique using the VAC system can provide a means of simple and effective management for the cervical intramuscular abscess, with better cosmetic and functional results.