• Journal of the Korean Crystal Growth and Crystal Technology
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• v.27 no.1
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• pp.22-27
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• 2017

$TiO_2$ films, thickness of $1{\sim}30{\mu}m$ were deposited on glass substrate at room temperature by room temperature granule spray in vacuum. The starting powder was calcinated at $600^{\circ}C$ for 4 h using $Al_2O_3$ crucible in the furnace. The particle size of the $TiO_2$, $1.5{\mu}m$ was measured by a particle size analyzer. The effect of different process parameters such as number of pass, gas flow rate and feeder voltage was studied. As the number of passes increased, the film thickness increased proportionally due to adequate kinetic energy conserved. The effect of three different flow rates (i.e. 15, 25, and 35 LPM) on deposited film was investigated. As gas flow rate increased, the film thickness increased up to 25 LPM and then decreased. Higher feeder voltage with low flow rate of 15 LPM resulted in unsufficient coating thickness due to insufficient kinetic energy. Microstructure of $TiO_2$ films was investigated by scanning electron microscope and high resolution tramission electron microscope.

• Journal of the Korean Vacuum Society
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• v.17 no.2
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• pp.90-95
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• 2008

We studied the effect of thermal annealing and hydrofluoric (HF) acid treatment on the field emission properties of carbon nanotube field emitter arrays (CNT-FEAs) grown with the resist-assisted patterning (RAP) process. After thermal and HF treatment, it was observed that the electron emission properties were remarkably improved. The enhanced electron emission was also found to depend strongly on the sequence of the treatments; the electronemission current density is 656 $mA/cm^2$ with the process of thermal treatment prior to HF treatment while the current density is reduced by 426 $mA/cm^2$ with the reversal processes. This is due to the increased crystalline structure by thermal annealing and then strong fluorine bond was formed by HF treatment.

• Restorative Dentistry and Endodontics
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• v.27 no.5
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• pp.493-501
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• 2002

This study evaluated the microleakage performance of four self-etcing primer adhesives(Clearfil SE Bond, Clearfil Liner Bond 2, UniFil Bond, and FL Bond) and one self-etching adhesive(Prompt L-Pop). Class V cavity preparations with occlusal margins in enamel and gingival margins in dentin were prepared on both buccal and lingual surfaces of 50 extracted human molar teeth. Prepared teeth were randomly divided into five groups and restored using one of five adhesives and composite resins: Prompt L-Pop/Filtek Z 250(Group 1), Clearfil SE Bond/Clearfil AP-X(Group 2), Clearfil Liner Bond 2/Clearfil AP-X(Group 3), UniFil Bond/UniFil F(Group 4), and FL Bond/Filtek Z 250(Group 5). Following one day storage in room temperature water, the restored teeth were thermocycled for 500 cycles between 5$^{\circ}C$ and 55$^{\circ}C$. Marginal microleakage was assessed by dye penetration using 2% methylene blue dye. After 24 hours, the teeth were sectioned longitudinally and evaluated for microleakage under steromicroscope The data were statistically analysed by Kruskal-Wallis Test, Mann-Whitney and Wilcoxon signed ranked tests. The results of this study were as follows ; 1. The microleakges at both enamel and dentinal mal$.$gins were the lowest in group 4. increasing among groups in the following order: group 2, follwed by group 5, follwed by group 1, and the highest in group 3. 2. At the enamel margins, the microleakage of group 3 was significantly higher than those of groups 2. 4 and 5(p<0.05), and also the microleakage of group 1 was statistically higher than those of groups 2 and 5(p<0.05). 3. At the dentinal margins, microleakage of group 3 was signincantly higher than microleakages of groups 1, 2, 4 and 5(p<0.05). 4. Compared with microleakages between the enamel and dentinal margins of each group, groups 1, 4 and 5 at enamel margin and group 2 and group 3 at dentinal margin were higher microleakage. But there was no significant difference between enamel and dentinal microleakages of each group(p>0.05).

• Restorative Dentistry and Endodontics
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• v.28 no.1
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• pp.1-10
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• 2003

This study investigated the influence of IRM on marginal microleakage of 5th generation adhesives. Class V cavities with gingival margins in dentin were prepared on both buccal and lingual surfaces of 60 extract-ed human molar teeth. Prepared teeth were randomly divided into six groups. Group 1 and 4 received no temporary restoration with IRM. Group 2 and 5 were covered with IRM mixed at P/L ratio(10g/1g). Group 3 and 6 were covered with IRM mixed at P/L ratio(10g/2g). The temporary restorations were removed mechanically with an ultrasonic scaler after one-week storage in distilled water. The cavities were restored using one of two adhesives and composites ; Single Bond/Filtek Z 250(Croup 1, 2 and 3), UniFil Bond/UniFil F(Group 4, 5 and 6). Following one day storage in distilled water, the restored teeth were thermocycled for 500 cycles(between $5^{\circ}C{\;}and{\;}55^{\circ}C$) and immersed in 2 % methylene blue for dye penetration testing. The results were analysed using Kruskal-Wallis Test, Mann-Whitney and Wilcoxon signed ranked test at a significance level of 0.05. The results of this study were as follows 1. Ranking of mean microleakage scores at the enamel margins was Group 10.05) 4. At the dentin margins, the microleakage of the group not pretreated with IRM was lower than that of the group pretreated with IRM. And the microleakage of UniFil Bond was lower than that of Single Bond. 5. Compared with microleakages between the enamel and dentin margins of each groups, Group 1, 2, 3, 4, 5 and 6 at dentin margin were higher microleakage than those at enamel margin. There were significant difference between enamel and dentin microleakage of Group 2 and 3(p<0.05).

• Journal of Life Science
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• v.31 no.11
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• pp.1010-1018
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• 2021

Although varieties of silkworms, which have recently attracted attention as a health functional food, are being produced, studies on the differences in the functionality of different silkworm varieties are insufficient. Therefore, in this study, the antioxidant activities of different silkworm breeds bred in domestic farms were analyzed, and the potential for their cultivation as specialized varieties with excellent antioxidant function was investigated. To compare antioxidant activity, four varieties of silkworms, white Bakokjam, Golden silk, Yeonokjam, and Hanseongjam, were bred; water and ethanol extracts of these silkworms were prepared on the 3rd and 5th days of the 5th instar larval stage. The highest extraction yield was seen for the water extract from the Golden silk variety on the 3rd day of the 5th instar; the highest total phenolic compound and flavonoid contents were observed for the water extract (86.11±4.04 ㎍/mg GE) and 70% (v/v) ethanol extract (46.70±2.81 ㎍/mg QE). Bakokjam and Yeonokjam exhibited DPPH radical scavenging activity of up to 78% and showed the highest nitrite scavenging activity (85%) at pH 1.2. The maximum SOD-like activity of Yeonokjam was about 47%. Furthermore, 48 ㎍/ml of the Yeonokjam extract showed a reducing power of 0.7 abs, which was the best among the four varieties. Considering these results, the Yeonokjam (on the 3rd day of the 5th instar) had antioxidant activity and represents a silkworm cultivar that would be suitable for cultivation as a health food.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.154-155
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• 2012

The promise of nano-crystalites (nc) as a technological material, for applications including display backplane, and solar cells, may ultimately depend on tailoring their behavior through doping and crystallinity. Impurities can strongly modify electronic and optical properties of bulk and nc semiconductors. Highly doped dopant also effect structural properties (both grain size, crystal fraction) of nc-Si thin film. As discussed in several literatures, P atoms or radicals have the tendency to reside on the surface of nc. The P-radical segregation on the nano-grain surfaces that called self-purification may reduce the possibility of new nucleation because of the five-coordination of P. In addition, the P doping levels of ${\sim}2{\times}10^{21}\;at/cm^3$ is the solubility limitation of P in Si; the solubility of nc thin film should be smaller. Therefore, the non-activated P tends to segregate on the grain boundaries and the surface of nc. These mechanisms could prevent new nucleation on the existing grain surface. Therefore, most researches shown that highly doped nc-thin film by using conventional PECVD deposition system tended to have low crystallinity, where the formation energy of nucleation should be higher than the nc surface in the intrinsic materials. If the deposition technology that can make highly doped and simultaneously highly crystallized nc at low temperature, it can lead processes of next generation flexible devices. Recently, we are developing a novel CVD technology with a neutral particle beam (NPB) source, named as neutral beam assisted CVD (NBaCVD), which controls the energy of incident neutral particles in the range of 1~300eV in order to enhance the atomic activation and crystalline of thin films at low temperatures. During the formation of the nc-/pm-Si thin films by the NBaCVD with various process conditions, NPB energy directly controlled by the reflector bias and effectively increased crystal fraction (~80%) by uniformly distributed nc grains with 3~10 nm size. In the case of phosphorous doped Si thin films, the doping efficiency also increased as increasing the reflector bias (i.e. increasing NPB energy). At 330V of reflector bias, activation energy of the doped nc-Si thin film reduced as low as 0.001 eV. This means dopants are fully occupied as substitutional site, even though the Si thin film has nano-sized grain structure. And activated dopant concentration is recorded as high as up to 1020 #/$cm^3$ at very low process temperature (＜ $80^{\circ}C$) process without any post annealing. Theoretical solubility for the higher dopant concentration in Si thin film for order of 1020 #/$cm^3$ can be done only high temperature process or post annealing over $650^{\circ}C$. In general, as decreasing the grain size, the dopant binding energy increases as ratio of 1 of diameter of grain and the dopant hardly be activated. The highly doped nc-Si thin film by low-temperature NBaCVD process had smaller average grain size under 10 nm (measured by GIWAXS, GISAXS and TEM analysis), but achieved very higher activation of phosphorous dopant; NB energy sufficiently transports its energy to doping and crystallization even though without supplying additional thermal energy. TEM image shows that incubation layer does not formed between nc-Si film and SiO2 under later and highly crystallized nc-Si film is constructed with uniformly distributed nano-grains in polymorphous tissues. The nucleation should be start at the first layer on the SiO2 later, but it hardly growth to be cone-shaped micro-size grains. The nc-grain evenly embedded pm-Si thin film can be formatted by competition of the nucleation and the crystal growing, which depend on the NPB energies. In the evaluation of the light soaking degradation of photoconductivity, while conventional intrinsic and n-type doped a-Si thin films appeared typical degradation of photoconductivity, all of the nc-Si thin films processed by the NBaCVD show only a few % of degradation of it. From FTIR and RAMAN spectra, the energetic hydrogen NB atoms passivate nano-grain boundaries during the NBaCVD process because of the high diffusivity and chemical potential of hydrogen atoms.

• Journal of Life Science
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• v.21 no.7
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• pp.1032-1038
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• 2011

Recently identified Ciona intestinalis voltage sensor-containing phosphatase (Ci-VSP) consists of an ion channel-like transmembrane domain (VSD) and a phosphatase-like domain. Ci-VSP senses the change of membrane potential by its VSD and works as a phosphoinositide phosphatase by its phosphatase domain. In this study, we present the construction of His-tagged phosphatase-like domain of Ci-VSP, its recombinant expression and purification, and its enzymatic activity behavior in order to examine the biochemical behavior of phosphatase domain of Ci-VSP without interference. We found that Ci-VSP(248-576)-His can be eluted with an elution buffer containing 25 mM NaCl and 100 mM imidazole during His-tag purification. In addition, we found the proper measurement condition for kinetics study of Ci-VSP(248-576)-His against p-nitrophenyl phosphate (pNPP). We measured the kinetic constant of Ci-VSP(248-576)-His at $37^{\circ}C$, pH 5.0 or 5.5, under 30 min of reaction time, and less than $2.0\;{\mu}g$ of protein amount. With these conditions, we acquired that Ci-VSP(248-576)-His has $K_m$ of $354{\pm}0.143\;{\mu}M$, $V_{max}$ of $0.0607{\pm}0.0137\;{\mu}mol$/min/mg and $k_{cat}$ of $0.359{\pm}0.009751\;min^{-1}$ for pNPP dephosphorylation. Therefore, we produced a pure form of Ci-VSP(248-576)-His, and this showed a higher activity against pNPP. This purified protein will provide the road to a structural investigation on an interesting protein, Ci-VSP.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.430-430
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• 2012

The surface recombination velocity of the silicon solar cell could be reduced by passivation with insulating layers such as $SiO_2$, SiNx, $Al_2O_3$, a-Si. Especially, the aluminium oxide has advantages over other materials at rear surface, because negative fixed charge via Al vacancy has an additional back surface field effect (BSF). It can increase the lifetime of the hole carrier in p-type silicon. The aluminium oxide thin film layer is usually deposited by atomic layer deposition (ALD) technique, which is expensive and has low deposition rate. In this study, ICP-assisted reactive magnetron sputtering technique was adopted to overcome drawbacks of ALD technique. In addition, it has been known that by annealing aluminium oxide layer in nitrogen atmosphere, the negative fixed charge effect could be further improved. By using ICP-assisted reactive magnetron sputtering technique, oxygen to nitrogen ratio could be precisely controlled. Fabricated aluminium oxy-nitride (AlON) layer on silicon wafers were analyzed by x-ray photoelectron spectroscopy (XPS) to investigate the atomic concentration ratio and chemical states. The electrical properties of Al/($Al_2O_3$ or $SiO_2/Al_2O_3$)/Si (MIS) devices were characterized by the C-V measurement technique using HP 4284A. The detailed characteristics of the AlON passivation layer will be shown and discussed.

• Bulletin of the Korean Chemical Society
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• v.25 no.4
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• pp.511-516
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• 2004

A Li$[Co_{0.17}Li_{0.28}Mn_{0.55}]O_2$ cathode compound was prepared by a simple combustion method. The X-ray diffraction pattern showed that this compound could be classified as ${\alpha} -NaFeO_2$ structure type with the lattice constants of a = 2.8405(9) ${\AA}$ and c = 14.228(4) ${\AA}$. According to XANES analysis, the oxidation state of Mn and Co ions in the compound were 4+ and 3+, respectively. During the first charge process, the irreversible voltage plateau at around 4.65 V was observed. The similar voltage-plateau was observed in the initial charge profile of other solid solution series between $Li_2MnO_3\;and\;LiMnO_2$ (M=Ni, Cr...). The first discharge capacity was 187 mAh/g and the second discharge capacity increased to 204 mAh/g. As the increase of cycling number, one smooth discharge profile was converted to two distinct sub-plateaus and the discharge capacity was slowly decreased. From the Co and Mn K-edge XANES spectra measured at different cyclic process, it can be concluded that irreversible transformation of phase is occurred during continuous cycling process.

• Journal of Electrochemical Science and Technology
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• v.10 no.4
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• pp.394-401
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• 2019

The unique study of TiO₂ sol-gel modified carbon paste electrode (CPE) nanocomposites have been developed for electrochemical sensor detecting fipronil pesticide compound. We develop the easy synthesized TiO₂ via a sol-gel method and modified in CPE which applied electrochemical system as cyclic voltammetry (CV) because the concentration is proportional with current peaks. We discover the TiO₂ optimal mass used of 0.1 g which is compared with 0.7 g carbon and 0.3 mL paraffin. It has high-current anodic (Ip_a) of 1.13×10³ μA and high-current cathodic (Ip_c) -0.96×10³ μA in scan rate of 0.5 V/s. The limit of detection (LOD) of fipronil has been determined of 34.0×10^-5 μM in percent recovery of 0.8%. Its high-stability for lifetime TiO₂-CPE nanocomposites was expressed for 13 days which mean that can be used for detecting fipronil pesticide.