• Bulletin of the Korean Chemical Society
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• v.32 no.7
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• pp.2207-2211
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• 2011

Colloidal cadmium telluride (CdTe) quantum dots (QDs) and their nanoparticles have been synthesized by one pot sonochemical reactions under multibubble sonoluminescence (MBSL) conditions, which are quite mild and facile compared to other typical high temperature solution-based methods. For a typical reaction, $CdCl_2$ and tellurium powder with hexadecylamine and trioctylphosphine/trioctylphosphineoxide (TOP/TOPO) as a dispersant were sonicated in toluene solvent at 20 KHz and a power of 220W for 5-40 min at 60 $^{\circ}C$. The sizes of CdTe particles, in a very wide size range from 2 nm-30 ${\mu}m$, were controllable by varying the sonicating and thermal heating conditions. The prepared CdTe QDs show different colors from pale yellow to dark brown and corresponding photoluminescence properties due mainly to the quantum confinement effect. The CdTe nanoparticles of about 20 nm in average were found to have band gap of 1.53 eV, which is the most optimally matched band gap to solar spectrum.

• Elastomers and Composites
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• v.51 no.3
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• pp.240-249
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• 2016

$BiVO_4$ nanomaterial was synthesized from bismuth (III) nitrate pentahydrate [$Bi(NO_3)_3{\cdot}5H_2O$] and ammonium vanadate (V) [$NH_4VO_3$]. The $BiVO_4$-graphene nanocomposite was fabricated by calcining the $BiVO_4$ nanomaterial and graphene under an oxygen-free atmosphere at $700^{\circ}C$. X-ray diffraction (XRD) and scanning electron microscopy (SEM) were employed to characterize structural and morphological properties of samples. The catalytic activity of the $BiVO_4$-graphene nanocomposite was studied for the reduction of 4-nitrophenol, 3-nitrophenol and 2-nitrophenol by sodium borohydride [$NaBH_4$]. The photocatalytic activity of the $BiVO_4$-graphene nanocomposite was demonstrated by the degradation of organic dyes like BG, MB, MO and RhB under irradiation at 365 nm. The catalytic and photocatalytic activity were studied by UV-vis spectrophotometry.

• Nuclear Engineering and Technology
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• v.48 no.3
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• pp.773-777
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• 2016

A betavoltaic battery was prepared using radioactive $^{63}Ni$ attached to a three-dimensional single trenched P-N absorber. The optimum thickness of a $^{63}Ni$ layer was determined to be approximately $2{\mu}m$, considering the minimum self-shielding effect of beta particles. Electroplating of radioactive $^{63}Ni$ on a nickel (Ni) foil was carried out at a current density of $20mA/cm^2$. The difference of the short-circuit currents ($I_{sc}$) between the pre- and post-deposition of $^{63}Ni$ (16.65 MBq) on the P-N junction was 5.03 nA, as obtained from the I-V characteristics. An improved design with a sandwich structure was provided for enhancing performance.

• Transactions of Materials Processing
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• v.15 no.8 s.89
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• pp.603-608
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• 2006

The main purpose of the present study has been placed on investigating the mechanical properties and microstructures of C-Si-Mn-V steels for cold forming manufactured by controlled rolling and cooling technology. The steels were manufactured in electric arc furnace (EAF) and casted to $160{\times}160mm$ billet. The billets were reheated in walking beam furnace and rolled to coil, the stocks were rolled by Controlled Rolling and Cooling Technology (CRCT), so rolled at low temperature by water spraying applied in rolling stage and acceleratly cooled before coiling. Rolled coils were cold drawed to the degree of 16%, 27% of area reduction respectively without heat treatment. Microstructual observation, tensile test, compression test and charpy impact tests were conducted. The mechanical properties of the steels were changed by area reduction of cold drawing and it is founded that there are optimum level of cold drawing to minimize compression stress for these steels. From the result of this study, it is conformed that $80kg_{f}/mm^{2},\;90kg_{f}/mm^{2}$ grade high strength microalloyed steel for cold forming are developed by accelerated cooling and optimum cold drawing.

• Journal of the Korean Ceramic Society
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• v.49 no.2
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• pp.179-184
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• 2012

The size of various alumina ceramics used in semiconductor and display industry is required to increase with increase in wafer and panel size. In this research, large alumina ceramics were fabricated by uniaxial pressing, cold isostatic pressing and filter pressing with commercial powder and thereafter sintering at $1600^{\circ}C$ in gas furnace. The large alumina ceramics exhibited dense microstructure corresponding to 98.5% of theoretical density and 99.8% of high purity. The impurities and microstructural defects of the alumina were found to influence the resistance and dielectric properties. The volume resistances in these four aluminas were almost the same while the pure alumina was higher value. The dielectric constant, dielectric loss and dielectric strength of aluminas were placed within the range of 10.3~11.5, 0.018~0.036, and 10.1~12.4 kV/mm, respectively.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.1
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• pp.23-30
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• 1993

Hydrogenation on the top gate and bottom gate Poly-Si TET's was performed by using Nh$_{3}$ plasma and annealing SiN film deposited by PECVD and then the electric characteristics on Poly-Si TET were investigated. As the time of NA$_{3}$ plasma treatment increaes, on/off current ratio gradually increases and the swing value decreases. The trap densities of graim boundaries in Poly-Si decrease very much during the inital 20min of hydrogenation time, and the decreasing scale becomes smaller after 20 min. The electric characteristics of the top gate TFT are better than those of the bottom gate TFT, it is considered due to the defects at the interface between the Poly-Si and the underlayer, SiO$_{2}$. After NH$_{3}$ plasma was treated for 2 hours for the top gate TFT, as the aging time atroon temperature increases on current was not scacely changed and off current decreases more than 1 order. Gate current density recovers to original value after the aging treatment for 8 days and then the electric characteristics are finally improved. It is suggested that the degraded characteristics of gate oxide are improved, from the variations of C-V characteristics with aging time. For the hydrogenation of isothermal and isochronal annealing SiN film deposited by PECVD, the characteristics of Poly-Si TFT are improved with increasing annealing temperature and are not largely changed with increasing annealing time. This results is good in agreement with the hydrogen reduction in Sin film as variations of annealing temperature and time.

• ALGAE
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• v.32 no.3
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• pp.245-259
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• 2017

We report on the culture growth and stress-induced secondary carotenogenesis in a biotechnologically promising but largely unexplored chlorophyte Coelastrella rubescens strain Vinatzer/Innsbruck V 195. Changes in the cell morphometry, biomass accumulation, its carotenoid and fatty acid profiles were followed in the cultures supplemented with either inorganic ($CO_2$) or organic (sodium acetate) carbon on the background of low-pH stress. Collectively, the results of the study characterize C. rubescens as a biotechnologically promising, potentially double-purpose organism. It produces several secondary keto-carotenoids with a considerable proportion of astaxanthin and canthaxanthin. At the same time, the cell lipid fatty acid profile of this microalga is suitable for obtaining a high-quality biodiesel complying with the strictest EN14214 European standard.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.384.1-384.1
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• 2014

대면적 그래핀을 합성하는 방법으로 주로 화학기상증작법, SiC 기판을 고온 열처리하는 방법 그리고 최근에는 고체소스를 활용하여 그래핀을 합성하는 방법 등이 보고되고 있다. 이에, 본 연구에서는 폴리머 용액들을 원하는 기판에 스핀코팅하여 건조시킨 후, 후 열처리 공정을 통해 그래핀을 합성하고 물성을 평가해보았다. 그래핀 합성을 위해서 사용된 폴리머 탄소원은 Vinyl계 폴리머 용액으로, polystyrene (PS), polyacrylonitrile (PAN), 그리고 polymethylmetacrylate (PMMA) 등으로 2wt%의 폴리머 용액을 $SiO_2$기판에 스핀 코팅을 하고, 그 위에 Nickel이나 Copper와 같은 catalytic metal을 capping layer로 증착하고, 고진공에서 후열처리 공정에 의해 그래핀을 성장하였다. 이때, 탄소원으로 쓰인 PS, PMMA 폴리머는 pristine graphene 합성을 위해, PAN 폴리머는 질소가 도핑된(n-type) 그래핀 합성을 위해 사용되었다. 그래핀의 물성은 폴리머 종류, 코팅된 두께, 촉매 금속층 종류와 두께, 그리고 후열처리 공정 온도와 시간에 따라서 조절이 가능하였다. 우리는 Raman spectroscopy, AFM, SEM 등을 활용하여 그래핀의 층수, 결함, 표면양상 등을 평가하였고, 또한 전사된 그래핀을 기반으로 제작된 FET의 게이트 전압에 따른 I-V 곡선을 측정하여 캐리어 종류 및 전하 이동도 등을 평가하였다. 더욱 상세한 내용은 프레젠테이션에서 논하겠다.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.242.2-242.2
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• 2014

Plasma-polymer thin films (PPTF) have been deposited on a Si(100) wafer and glass under several conditions such as different RF power by using plasma-enhanced chemical vapor deposition (PECVD) system. Ethylcyclohexane, ammonia gas, hydrogen and argon were utilized as organic precursor, doping gas, bubbler gas and carrier gases, respectively. PPTFs were grown up with RF (ratio frequency using 13.56 MHz) powers in the range of 20~60 watt. PPTFs were characterized by FT-IR (Fourier Transform Infrared), FE-SEM (Scanning Electron Microscope), AFM (Atomic Force Microscope), Contact angle and Probe station. The result of FT-IR measurement showed that the PPTFs have high cross-link density nitrogen doping ratio was also changed with a RF power increasing. AFM and FE-SEM also showed that the PPTFs have smooth surface and thickness. Impedance analyzer was utilized for the measurements of C-V curves having different dielectric constant as RF power.

• Restorative Dentistry and Endodontics
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• v.14 no.1
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• pp.199-204
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• 1989

The purpose of this study was to observe the anodic polarization curve from 4 kinds of low copper amalgam (Fine cut alloy, Spheralloy, Aristalloy and Amalcap) and 4 kinds of high copper amalgam (Dispersalloy, Sybraloy Orosphere and Tytin) obtained by using the potentiostat. The specimen made as the direction of manufacturer was stored at room temperature for about 7 days. The standard surface preparation was routinely carried out. The 0.9% saline solution was used as electrolyte in pH 6.8-7.0 at $37^{\circ}C$. The open circuit potential was determined after 30 minutes' immersion of specimen. The scan rate was 1mV/sec and the surface area of amalgam exposed to the solution was 0.785$cm^2$ for each specimen. All potentials reported are with respect to Ag/AgCl eelctrode. The following results were obtained. 1. The corrosion potential of high copper amalgams was higher than one of low copper amalgams, and the current density of high copper amalgam was lower than one of low copper amalgams. 2. The low copper amalgams had the similar pattern of polarization curve, but the high copper amalgams had the different pattern one another. 3. The polarization curve of Orosphere amalgam which is the admixed type was similar to one of low copper amalgam.