• Journal of the Korean Institute of Telematics and Electronics
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• v.18 no.4
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• pp.21-26
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• 1981

SnO2/n-Si and ITO/n-Si SIS solar cells have been fabricated ty mears of electron-beam deposition. The optimum oxidation and heat-treatment condition for SnO2/n-Si cells and ITO/n-Si cells are 50$0^{\circ}C$-5min., 30$0^{\circ}C$-10min., and 50$0^{\circ}C$-5min., 30$0^{\circ}C$-20min. respectively. The open-circuit Voltage(Voc), short-circuit current density(Jsc), fill factor(FF), and efficiency (η) under AMI(100mW/$\textrm{cm}^2$) illumination were 0.4V, 34mA/$\textrm{cm}^2$, 0.44, and 6.0%(active area efficiency, 6.9%) for SnO2/n-Si solar cells, and 0.44V, 36mA/$\textrm{cm}^2$, 0.53, and 8.45%(active area efficiency, 9.71%) for ITO/n-Si solar calls.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.963-967
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• 2001

The effects of the sintering additives such as Bi$_2$O$_3$and V$_2$O$_{5}$ on the microwave dielectric and sintering properties of ZnTiO$_3$system were investigated. Densities of >97% of the theoretical densities have been attained for ZnTiO$_3$at the sintering temperature range of 870~90$0^{\circ}C$ with Bi$_2$O$_3$and V$_2$O$_{5}$ additions of $_3$were obtained with 0.6wt% Bi$_2$O$_3$and 0.5wt% V$_2$O$_{5}$; Qxf$_{o}$ = 48,400 GHz, $\varepsilon$$_{r}$ = 22, and $\tau$$_{f}$ = -43 PPm/$^{\circ}C$. In order to improve temperature coefficient of resonance frequency, TiO$_2$was added to the above system. The optimum amount of TiO$_2$was 15mo1% when sintered at 87$0^{\circ}C$, at which we could obtain following results ; Qxf$_{o}$ = 44,700 GHz, $\varepsilon$$_{r}$ = 26, and $\tau$$_{f}$ = 0 ppm/$^{\circ}C$.EX>.>.EX>.>.>.EX>.

• Journal of Life Science
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• v.20 no.6
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• pp.902-906
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• 2010

A producer of thermophilic extracellular lipase, Geobacillus kaustophilus DSM 7263, was selected from various microorganisms of the Geobacillus genus. We investigated optimum conditions for mass production of G. kaustophilus lipase. Among the different natural oil media, olive oil was optimal for enzyme production. The maximum amount of enzyme production was obtained when G. kaustophilus was grown in a medium containing 0.5% olive oil as a carbon source. The pH and temperature for optimal growth were pH 8.0 and $55^{\circ}C$, respectively, while the optimum pH and temperature for lipase production were pH 6.0 and $50^{\circ}C$, respectively. In the presence of $Mg^{2+}$ and $Mn^{2+}$, lipase production was dramatically enhanced by 247% and 157%, respectively, whereas enzyme production was inhibited by $Zn^{2+}$, $Cu^{2+}$, and $Cd^{2+}$. The addition of 0.1% (v/v) triton X-100 increased lipase production and cell growth when compared to the negative control.

• The Korean Journal of Pesticide Science
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• v.6 no.3
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• pp.218-223
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• 2002

The rate of hydrolysis of insecticide, O,O-diethyl-O-(1-phenyl-3-trifluoromethylpyrazol-5-yl)phosphorothioate (Flupyrazofos) have been investigated in 25% (v/v) aqueous dioxane (${\mu}=0.1M$) at $45^{\circ}C$. The hydrolysis mechanism of flupyrazofos proceeds through the specific acid ($A_{AC}2$) catalysis below pH 4.0, specific base ($B_{AC}2$) catalysis above pH 11.0 and general acid & base ($B_{AC}2$) catalysis between pH 5.0 and pH 10.0 via trigonal-bipyramidal ($d^2sp^3$) intermediate as evidence by solvent effect ($|m|{\ll}|{\ell}|$), rate equation ($kt=ko+k_H+ [H_3O^+]+k_{OH}[OH^-]$) and product analysis. The half-life ($T\frac{1}{2}$) of hydrolytic degradation in neutral media at $45^{\circ}C$ was ca. 3 months.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.1
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• pp.30-36
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• 2002

The effects of the sintering additives such as B $i_2$ $O_3$ and $V_2$ $O_{5}$ on the microwave dielectric and sintering properties of ZnTi $O_3$ system were investigated. Highly dense samples were obtained for ZnTi $O_3$ at the sintering temperature range of 870~90$0^{\circ}C$ with B $i_2$ $O_3$ and $V_2$ $O_{5}$ additions of <1 wt.%, respectively. The microwave dielectric properties of ZnTi $O_3$ with 0.6 wt.% B $i_2$ $O_3$ and 0.5 wt.% $V_2$ $O_{5}$ were as follows: Qx $f_{o}$ = 48,400 GHz, $\varepsilon$$_{r}$= 22, and $\tau$$_{f}$ = -43 ppm/$^{\circ}C$. In order to improve temperature coefficient of resonant frequency, Ti $O_2$ was added to the abode system. The optimum amount of Ti $O_2$was 15 mol.% when sintered at 87$0^{\circ}C$, at which Ive could obtain following results: Qx $f_{O}$ = 44,700GHz, $\varepsilon$$_{r}$ = 26, and $\tau$$_{f}$ = 0 PPm/$^{\circ}C$.>.EX>.>.>.EX>.>.>.

• Genomics & Informatics
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• v.18 no.3
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• pp.30.1-30.7
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• 2020

The novel coronavirus pandemic that has originated from China and spread throughout the world in three months. Genome of severe acute respiratory syndrome coronavirus 2 (SARS-CoV-2) predecessor, severe acute respiratory syndrome coronavirus (SARS-CoV) and Middle East respiratory syndrome coronavirus (MERS-CoV) play an important role in understanding the concept of genetic variation. In this paper, the genomic data accessed from National Center for Biotechnology Information (NCBI) through Molecular Evolutionary Genetic Analysis (MEGA) for statistical analysis. Firstly, the Bayesian information criterion (BIC) and Akaike information criterion (AICc) are used to evaluate the best substitution pattern. Secondly, the maximum likelihood method used to estimate of transition/transversions (R) through Kimura-2, Tamura-3, Hasegawa-Kishino-Yano, and Tamura-Nei nucleotide substitutions model. Thirdly and finally nucleotide frequencies computed based on genomic data of NCBI. The results indicate that general times reversible model has the lowest BIC and AICc score 347,394 and 347,287, respectively. The transition/transversions bias for nucleotide substitutions models varies from 0.56 to 0.59 in MEGA output. The average nitrogenous bases frequency of U, C, A, and G are 31.74, 19.48, 28.04, and 20.74, respectively in percentages. Overall the genomic data analysis of SARS-CoV-2, SARS-CoV, and MERS-CoV highlights the close genetic relationship.

• Journal of Sensor Science and Technology
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• v.15 no.6
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• pp.397-405
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• 2006

Single crystal $AgGaSe_{2}$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at $420^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $AgGaSe_{2}$ source at $630^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $AgGaSe_{2}$ thin films measured with Hall effect by van der Pauw method are $4.05{\times}10^{16}/cm^{3}$, $139cm^{2}/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $AgGaSe_{2}$ obtained from the absorption spectra was well described by the Varshni's relation, $E_{g}(T)$=1.9501 eV-($8.79{\times}10^{-4}{\;}eV/K)T^{2}$/(T+250 K). The crystal field and the spin-orbit splitting energies for the valence band of the $AgGaSe_{2}$ have been estimated to be 0.3132 eV and 0.3725 eV at 10 K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}So$ definitely exists in the ${\Gamma}_{5}$ states of the valence band of the $AgGaSe_{2}$. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1}-$, $B_{1}-$, and $C_{1}-$exciton peaks for n=1.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.234-238
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• 2004

A stoichiometric mixture of evaporating materials for $CuInSe_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $CuInSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $620^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuInSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $9.62{\times}10^{l6}\;cm^{-3}$ and $296\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuInSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;1.1851\;eV\;-\;(8.99{\times}10^{-4}\;eV/K)T^2/(T+153K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $CuInSe_2$ have been estimated to be 0.0087 eV and 0.2329 eV at 10K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}_{so}$ definitely exists in the $\Gamma_6$ states of the valence band of the $CuInSe_2$. The three photocurrent peaks observed at 10K are ascribed to the $A_1-$, $B_1-$, and $C_1$-exciton peaks for n = 1.

• Journal of the Korean Vacuum Society
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• v.8 no.3A
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• pp.224-230
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• 1999

$SrBi_{2x}Ta_2O_9$ (SBT) thin films were prepared on platinized silicon substrates by MOD process, and their ferroelectric and leakage current characteristics were investigated. The grain size of the MOD derived SBT films increased with increasing the BI/Ta mole ration. Although the SBT films with x of 0.8~1.2 were composed of the equiaxed grains, the elongated grains were also observed for the SBT films with x of 1.4 and 1.6. The SBT film with x of 1.2 exhibited the optimum ferroelectric properties of 2PR : 9.79 $\muC/\textrm{cm}^2$ and Ec : 24.2kV/cm at applied voltage of 5V. The leakage current density of the SBT films increased with increasing the BI/Ta mole ratio. With post annealing process, 2Pr and $E_c$of the SBT film with x of 1.2 increases 11.3 $\muC/\textrm{cm}^2$ and 39.6kV/cm, respectively. decrement of the leakage current density by post annealing process increased remarkably with increasing the Bi/ta mole ratio, and the SBT film with x=1.6 exhibited the lowest leakage current density after post annealing process.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.1
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• pp.8-12
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• 2000

The properties variation by deterioration of the 600V grade heat-resistant polyvinyl chloride insulated wire(HIV) was analyzed. The weight variation of the thermal deteriorated HIV was about 42% at 80$0^{\circ}C$ and over. From the analysis result of the metallurgical microscope photographs it shows that the sorface of normal wire showed the elongated structures. However the elongated structures did not appear at $900^{\circ} and over and we could observe that particles were grown. The grown oxidized substances in the thermally deteriorated electric wire were observed by SEM. The CuL, CuK, $CuK_b$, OK and CIK spectra of the thermally deteriorated HIV at $300^{\circ}C$ were uniform regardless of the scanning length, but the spectra of CIK could not found at above $700^{\circ}. At the DTA analysis, the endothermic reactions were occurred around $3006{\circ}C\; and\; 400^{\circ}C$ and the exothermic reactions were occurred around $470^{\circ}, respectively.