• IMMUNE NETWORK
• /
• v.10 no.2
• /
• pp.35-45
• /
• 2010

Background: Expression of recombinant antibodies and their derivatives fused with other functional molecules such as alkaline phosphatase in Escherichia coli is important in the development of molecular diagnostic reagents for biomedical research. Methods: We investigated the possibility of applying a well-known Fos-Jun zipper to dimerize $V_H$ and $V_L$ fragments originated from the Fab clone (SP 112) that recognizes pyruvate dehydrogenase complex-E2 (PDC-E2), and demonstrated that the functional zipFv-112 and its alkaline phosphatase fusion molecules (zipFv-AP) can be produced in the cytoplasm of Origami(DE3) trxB gor mutant E. coli strain. Results: The zipFv-AP fusion molecules exhibited higher antigen-binding signals than the zipFv up to a 10-fold under the same experimental conditions. However, conformation of the zipFv-AP seemed to be influenced by the location of an AP domain at the C-terminus of $V_H$ or $V_L$ domain [zipFv-112(H-AP) or zipFv-112(L-AP)], and inclusion of an AraC DNA binding domain at the C-terminus of VH of the zipFv-112(L-AP), termed zipFv-112(H-AD/L-AP), was also beneficial. Cytoplasmic co-expression of disulfide-binding isomerase C (DsbC) helped proper folding of the zipFv-112(H-AD/L-AP) but not significantly. Conclusion: We believe that our zipFv constructs may serve as an excellent antibody format bi-functional antibody fragments that can be produced stably in the cytoplasm of E. coli.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.14 no.7
• /
• pp.572-577
• /
• 2001

The electrical properties of Pr$_{6}$ O$_{11}$ -based ZnO varistors consisting of ZnO-Pr$_{6}$ O$_{11}$ -CoO-Cr$_2$O$_3$-Er$_2$O$_3$ ceramics were investigated with sintering temperature in the range of 1325~f1345$^{\circ}C$. As sintering temperature is raised., the nonlinear exponent was increased up to 1335$^{\circ}C$, reaching a maximum 70.53, whereas raising sintering temperature further caused it to decrease, reaching a minimum 50.18 and the leakage current was in the range of 1.92~4.12 $\mu$A. The best electrical properties was obtained from the varistors sintered at 1335$^{\circ}C$, exhibiting a maximum (70.53) in the nonlinear exponent and a minimum (1.92 $\mu$A) in the leakage current, and a minimum (0.035) in the dissipation factor. On the other hand, the donor concentration was in the range of (0.90~1.14)x10$^{18}$ cm$^{-3}$ , the density of interface states was in the range of (2.69~3.60)x10$^{12}$ cm$^{-2}$ , and the barrier height was in the range of 0.77~1.21 eV with sintering temperature. With raising sintering temperature, the variation of C-V characteristic parameters exhibited a mountain type, reaching maximum at 134$0^{\circ}C$. Conclusively, it was found that the V-I, C-V, and dielectric characteristics of Pr$_{6}$ O$_{11}$ -based ZnO varistors are affected greatly by sintering temperature.

• Journal of Radiation Protection and Research
• /
• v.9 no.2
• /
• pp.55-60
• /
• 1984

The optimum etching condition of allyl diglycol carbonate (CR-39) for detecting the 60 MeV N-ions was determined as $70^{\circ}C$, 20% NaOH for 130min, by considering the variations of track density and diameter. Under these conditions, the maximum detectable track density was $1.7{\times}10^7tr/cm^2$. Track densities were linearly increased with increase of the total charge of the incident 60 MeV N-ions. By considering the scattring of N-ions as the Rutherford elastic scattering of point source, the measured relative probability was well consistent with the calculated value. The detection efficiency of CR-39 was in the range of 54-41% for 60 MeV N-ions of 12 nC-100 nC.

• Journal of Sensor Science and Technology
• /
• v.5 no.5
• /
• pp.31-37
• /
• 1996

This paper presents characteristics of pressure sensor using shear-type piezoresistor of LPCVD(low pressure chemical vapour deposition) grown polycrystalline silicon films. The sensor has 3.1mV/V of pressure sensitivity in the pressure range of $1kgf/cm^{2}$, ${\pm}0.012%FS/^{\circ}C$ of TCO, and ${\pm}0.08%FS/^{\circ}C$ of TCS in the temperature range of $-20{\sim}+125^{\circ}C$. It showed ${\pm}0.2%FS$ of hysteresis and ${\pm}1.5%FS$ of non-linearity. Shear-type polycrystalline silicon pressure sensor can eliminate temperature dependence of offset caused by resistors mismatch and be used in relatively wide temperature range, compared to the conventional full-bridge silicon pressure sensors.

• Korean Journal of Crystallography
• /
• v.8 no.2
• /
• pp.138-143
• /
• 1997

The crystal structure of isoimperatorin, f-[(3-methyl-2-butenyl)oxy]-7H-furo[3,2-g][1] benzopyran-7-one, has been determined from single crystal x-ray diffraction study; C16H14O4, Monoclinic, P21/c, a=8.865(1) Å, b=9.331(1) Å, c=16.156(1) Å, β=98.12(1)', V=1322.9(2) Å3, T=293(2)K, z=4, Cu Kα(λ=1.5418 Å). The structure was solved by direct method and refined by full-matrix least squares to a final R=5.72% for 1922 unique observed Fo>4o(F0) reflections and 182 parameters.

• Journal of the Institute of Electronics and Information Engineers
• /
• v.51 no.11
• /
• pp.94-100
• /
• 2014

In this paper, a design of low power Current-Reuse Voltage Controlled Oscillator (VCO) which has wide tuning range about 1.95 GHz ~ 3.15 GHz is presented. Class-C type is applied to improve phase noise and 2-Step Auto Amplitude Calibration (AAC) is used for minimizing the imbalance of differential VCO output voltage which is main issue of Current-Reuse VCO. The mismatch of differential VCO output voltage is presented about 1.5mV ~ 4.5mV. This mismatch is within 0.6 % compared with VCO output voltage. Proposed Current-Reuse VCO is designed using CMOS $0.13{\mu}m$ process. Supply voltage is 1.2 V and current consumption is 2.6 mA at center frequency. The phase noise is -116.267 dBc/Hz at 2.3GHz VCO frequency at 1MHz offset. The layout size is $720{\times}580{\mu}m^2$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.11a
• /
• pp.552-556
• /
• 2002

The microstructure and electrical characteristics of A~C's ZnO varistors fabricated according to variable sintering condition, which sintering temperature is $1130^{\circ}C$ and speeds of pusher are A: 2mm/min, B: 4mm/min, C: 6mm/min, respectively, were investigated. In the microstructure, A~C's ZnO varist-ors fabricated variable sintering condition was consisted of ZnO grain(ZnO), spinel phase$(Zn_{2.33}Sb_{0.67}O_4)$ Bi-rich $phase(Bi_{2}O_{3})$, wholly. Varistor voltage of A~C's ZnO varistors sintered at $1130^{\circ}C$ increased in order A < B < C's ZnO varistors. C's ZnO varistor exhibited good characteristics that nonlinear exponent is 31.70. Leakage current of A~C's ZnO varistors exhibited below 2mA at rated voltage. Lightning impulse residual voltage of A's ZnO varistor suited standard characteristics, which is 3.85kV at 2.5kA, 4.4kV at 5kA and 5.16kV at 10kA. After multi lightning impulse residual voltage test of A's ZnO varistor exhibited good discharge characteristics which ZnO varistor reveals no evidence of puncture, flashover, cracking in visual examination. After high current impulse test of A's ZnO varistor exhibited good discharge characteristics, which variation rate of residual voltage is 0.4% before and after test, and revealed no evidence.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.60 no.6
• /
• pp.1175-1177
• /
• 2011

The SBN thin films were deposited on Pt/Ti/$SiO_2$/Si and p-type Si(100) substrate by rf magnetron sputtering method using $Sr_{0.7}Bi_{2.3}Nb_2O_9$ ceramic target. SBN thin films deposited were annealed at 600~800[$^{\circ}C$] by furnace in oxygen atmosphere during 40min. The polarization characteristics have been investigated to confirm the possibility of the SBN thin films for the application to destructive read out ferroelectric random access memory. The maximum remanent polarization and the coercive voltage are 0.6[${\mu}C/cm^2$], 1.2[V] respectively at annealing temperature of 800[$^{\circ}C$]. The leakage current density was the $2.57{\times}10^{-6}[A/cm^2]$ at an applied voltage of 5[V] at annealing temperature of 650[$^{\circ}C$]. Also, the fatigue characteristics of SBN thin films did not change up to $10^8$ switching cycles.

• Journal of the Korean Vacuum Society
• /
• v.8 no.3A
• /
• pp.231-237
• /
• 1999

$SrBi_{22.4}Ta_2O_9$ (SBT) thin films of 70~150 nm thickness were prepared on platinized silicon substrates by Liquid Source Misted Chemical Deposition (LSMCD) process, and their microstructure, feroelectric and leakage current characteristics were investigated. By annealing at $800^{\circ}C$ for 1 hour in oxygen ambient, SBT films were fully crystallized to the Bi layered perovskite structure without preferred orientation. The grain size of the LSMCD- derived SBT films was about 100nm, and was not varied with the film thickness. $2P_r$ and $E_c$ of the SBT films increased with decreasing the film thickness, and the 70nm-thick SBT film exhibited $2P_r$ of 17.8 $\mu$C/$\textrm{cm}^2$ and $E_c$ of 74kV/cm at applied voltage of 5V. Within the film thickness range of 70~150nm, the relative dielectric permittivity of the LSMCD-derived SBT film decreased with decreasing the film thickness. Leakage current densities lower than $10^{-7}\textrm{A/cm}^2$ at 5V were observed in the SBT films thicker than 125nm.

• Korean Journal of Food Science and Technology
• /
• v.27 no.4
• /
• pp.439-444
• /
• 1995

Preparative conditions and characteristics of six-vegetable and fruit juice were studied for the effects of mixing ratio, heat treatment and addition of sugar, salt and organic acid. The vegetables and fruit used were carrot(Ct), cabbage(Cg), pear(Pr), cucumber(Cr), celery(Cy) and dongchimi(Di). From the sensory results of mixing ratio of three of binary mixtures of Cg-Pr(1:3):Ct-Di(1:4):Cr-Cy(3:1), two ratios of 5.0:2.5:2.5(V-6A) and 6.0:2.0:2.0(V-6B) were suggested optimal for six-vegetable and fruit juice. Addition of 2% sucrose and 0.3% NaCl improved the preference significantly. The pH 4.0 for V-6A and pH 3.5 for V-6B were more prefered when pH was adjusted by citric acid. Heating the juice at $100^{\circ}C$ for 100 minutes slightly decreased pH and increased the acidity. Total solids and viscosity were also decreased by heating. All of those changes were more significant in V-6B than V-6A, probably due to lower pH. Heating the juice resulted in a slight decrease in L value and an increase in a and b values. Heating at $100^{\circ}C$ caused an increase in moldy flavor and a decrease in fresh vegetable flavor while heating at $80^{\circ}C$ for 20 minutes changed them little.