• Title/Summary/Keyword: V2C

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Repaired concrete columns with fiber reinforced thixotropic mortar: experimental & FEA approach

  • Achillopoulou, Dimitra V.;Arvanitidou, Konstantinia C.;Karabinis, Athanasios I.
    • Computers and Concrete
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    • v.15 no.1
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    • pp.73-88
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    • 2015
  • Following previous studies, the current paper describes the results of an experimental program concerning the repair of reinforced concrete columns by thixotropic pseudo plastic mortar, preformed to analyze and quantify the influence of initial construction damage to the behavior of the repaired element. Five columns (section scale 1:2) were designed according to the minimum requirements of reinforcement of ductility orientated codes' design with variables the percentages of initial construction damages. All were tested in axial compression with repeated cycles up to failure. For comparison reasons, another one of the same characteristics, yet healthy, was constructed and tested as a reference specimen. A numerical study (Finite Element Analysis) was conducted for further investigation of the behavior of the thixotropic mortar as repair material. The results indicate that: a) surpassing a specific amount of damage, columns even suitably repaired present lower strain capacity, b) finite element analysis present the same way of deboning of the repaired material taking into consideration the buckling of the reinforcement bars.

MEMS용 MLCA와 Si기판의 양극접합 특성

  • 정귀상;김재민
    • Proceedings of the Korean Society Of Semiconductor Equipment Technology
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    • 2003.12a
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    • pp.105-108
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    • 2003
  • 본 논문은 파이렉스 #7740 유리박막을 이용한 MEMS용 MLCA와 Si기판의 양극접합 특성에 관한 것이다. 최적의 RF 마그네트론 스퍼터링 조건(Ar 100 %, input power $1W/\textrm{cm}^2$)하에서 MLCA 기판위에 파이렉스 #7740 유리의 특성을 갖는 박막을 증착한 후 600 V, $400^{\circ}C$에서 1시간동안 양극접합했다. 그 다음에 Si 다이어프램을 제조한 후, MLCA/Si 접합계면과 MLCA 구동을 통한 Si 다이어프램 변위특성을 분석 및 평가하였다. 다이어프램 형상에 따라 정밀한 변위 제어가 가능했으며 0.05-0.08 %FS의 우수한 선형성을 나타내었다. 또한, 측정동안 접합계면 균열이나 계면분리가 일어나지 않았다. 따라서, MLCA/Si기판 양극접합기술은 고성능 압전 MEMS 소자 제작공정에 유용하게 사용가능할 것이다.

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Evaluation of Characteristics of Oxidized Thin LPCVD-$Si_{3}N_{4}$ Film (얇은 열산화-질화막의 특성평가)

  • 구경완;조성길;홍봉식
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.29A no.9
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    • pp.29-35
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    • 1992
  • Dielectric thin film of N/O (Si$_{3}N_[4}/SIO_{2}$) for high density stacked dynamic-RAM cell was formed by LPCVD and oxidation(Dry & pyrogenic oxidation methods) of the top Si$_{3}N_[4}$ film. The thickness, structure and composition of this film were measured by ellipsometer, high frequency C-V meter, high resolution TEM, AES, and SIMS. The thickness limit of Si$_{3}N_[4}$ film in making thin N/O structure layer was 7nm. In this experiment, the film with thinner than 7nm was not thick enough as oxygen diffusion barrier, and oxygen punched through the film and interfacial oxidation occurred at the phase boundary between Si$_{3}N_[4}$ and polycrystalline silicon electrode.

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Ion-Selective Electrodes in Drugs Analysis: Verapamil-Selective Polymeric Membrane Electrodes Based on Calix[4]arene and Dibenzo-18-crown-6-ether Ionophores (이온 선택성 전극을 이용한 의약품 정량: Calix[4]arene과 Dibenzo-18-crown-6-ether에 의한 verapamil-선택성 polymeric membrane electrode)

  • 이은엽;김성진;김영학;김재현;허문회;안문규
    • YAKHAK HOEJI
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    • v.39 no.1
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    • pp.61-67
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    • 1995
  • PVC membrane electrodes based on the lipophilic neutral carrier, dibenzo-18-crown-6, cyclic oligomers of teit-butylphenol-formaidehyde condensates, calix[4]arenes as the active sensors for verapamil have been prepared and tested in a variety of plasticizers. At pH 5.0, the electrode exhibits a Nernstian response in the range of 10$^{-2}$~5$\times$10$^{-5}$ M verapamil with a slope of 49.1$\pm$0.5mV per concentration decade. The electrode constructed in this work can be used continuously for at least 1 month before any damage to the membrane occurs. And the analyses of the local anesthetic amine, which are good to select a specific compound in a mixed solution, were also accomplished by using of another neutral carrier, a DB18C6, for comparing with calix[4]arene.

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Mock-up Model of the Environment Assessment Study on Red-clay and Cement (Mock-up모델을 이용한 황토 및 시멘트의 환경요소 평가 연구)

  • Choi, Yool;Song, Hyeun-Guen
    • KIEAE Journal
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    • v.11 no.2
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    • pp.91-96
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    • 2011
  • The purpose of this study is to measure the environmental effects of different alternative building materials. The following building materials were tested: clay bricks, cement wall, and red-clay plaster. Four mock-up models were constructed using clay bricks, cement wall, red-clay plaster and the last model as the control model. The effects of the above four building materials on temperature, humidity, the emissions of formaldehyde, and V.O.C were measured. This experiment was conducted during September. The conclusions are as follows. Clay bricks were able to control temperature, humidity and filter formaldehyde by itself. The environment within the cement wall was not affected by the humidity changes outside. Red-clay plaster walls had little impact on the environment because it is very thin.!

Characteristics of the Avalanche Injection on SiO2Layer in MOS Structures (MOS 구조에서의 Avalanche Injection에 관한 연구)

  • 성영권;김성진;백우현;박찬원
    • The Transactions of the Korean Institute of Electrical Engineers
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    • v.34 no.6
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    • pp.244-252
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    • 1985
  • A model is presented to explain charging phenomena into the oxide layer when a metal-oxide-silicon(MOS) capacitor is driven by a large amplitude and high frequency ac signal sufficient to produce avalanche injection in the silicon. During avalanche, minority carriers are injected. It is assumed that some of these minority carriers attain sufficient energy to surmount the potential barrier at the interface, and then inter the oxide. Measurements of C-V curves are made for the MOS capacitor with p-type silicon substrates before and after avalanche injection. This paper studies how charging in the oxide and the interface depends on oxide properties. It is concluded that this charging effect is related to the presence of water in the oxide.

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Etch mechanism of MgO thin films for next generation devices (차세대 소자를 위한 MgO thin films 의 식각 특성)

  • Woo, Jong-Chang;Kim, Gwan-Ha;Kim, Chang-Il
    • Proceedings of the KIEE Conference
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    • 2006.07c
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    • pp.1380-1381
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    • 2006
  • 본 연구는 MgO 박막을 유도 결합 플라즈마를 이용하여, $CF_4/Ar$ 가스 혼합비로 식각하였고, RF 전력, DC-bais 전압과 Process Pressure를 변경하면서 실험하였다. 빛 방출 분석(optical emission spectroscopy, OES)을 이용하여, 플라즈마 진단과 식각 특성과의 관계를 분석하였다. OES 결과로부터 $CF_4$ 첨가비를 50%까지는 증가시킴에 따라 식각률이 증가하였고, 그 후에 Ar 이온이 감소함으로써 식각률이 감소하였다. MgO 박막의 최고 식각률은 50%의 $CF_4/(CF_{4}+Ar)$에서 700 W의 RF 전력, -150 V의 DC-bias 전압, 반응로 압력은 15 mTorr, 기판 온도는 $30^{\circ}C$로 고정시켰을 때 29nm/min이었다. 이 조건에서 MgO 박막과 $SiO_2$의 선택비는 0.06 이었다.

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Effect of Amino Silane Coupling Agent on the AC Electrical Breakdown Phenomena of Epoxy/Layered Silicate Nanocomposite in Needle-plate Electrodes

  • Park, Jae-Jun
    • Transactions on Electrical and Electronic Materials
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    • v.13 no.3
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    • pp.149-152
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    • 2012
  • The effects of amino silane coupling agent on the AC electrical treeing and breakdown behaviors in an epoxy/layered silicate (1 wt%) were examined in needle-plate electrode geometry. A layered silicate was exfoliated in an epoxy base resin by using our AC electric field apparatus. To measure the tree initiation and propagation and the breakdown rate, an alternating current (AC) of 10 kV (60 Hz) was applied to the specimen in needle-plate electrode arrangement with a $30^{\circ}C$ insulating oil bath. In the epoxy/amino silane system, the tree initiation time was 11.5 times higher and the breakdown time was 17.9 times higher than those of the neat epoxy resin. The tree initiation time in the epoxy/layered silicate (1 wt%) system with the amino silane was 2.0 times higher, and the breakdown time was 1.5 times higher than those of the epoxy/layered silicate (1 wt%) system.

Electrical property analysis of Si nanocrystal by SPM(Scanning Probe Microscopy) on insulating substrate (SPM(Scanning Probe Microscopy)을 이용한 국소영역에서 실리콘 나노크리스탈의 전기적 특성 분석)

  • Choi, Min-Ki;Kim, Jung-Min;Kang, Chi-Jung;Khang, Yoon-Ho;Kim, Young-Sang
    • Proceedings of the KIEE Conference
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    • 2004.11a
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    • pp.95-97
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    • 2004
  • 본 연구에서는 Scanning Capacitance Microscopy (SCM)와 Electrostatic Force Microscopy (EFM)을 이용하여 국소영역에서 실리콘나노 크리스탈의 전기적 특성을 분석하였다. 실리콘 나노 크리스탈은 에어로솔 방식으로 P-type 실리콘웨이퍼 위에 $10{\sim}40\;nm$의 크기와 약 $10^{11}/cm^2$의 밀도를 갖도록 제작하였다. 실리콘 나노 크리스탈에서 전자와 정공의 trapping 현상은 EFM, SCM 이미지를 통하여 관찰하였고 이러한 나노 크리스탈의 국소영역 특성을 MOS 캐패시터 구조의 C-V 특성을 비교 분석하였다. 또한, 나노 크리스탈에 trapping된 전하의 detrapping 과정을 스트레스 조건에 따라 분석하였다.

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