• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05c
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• pp.47-52
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• 2002

A processing method is developed for preparing sol-gel derived $Pb(Zr_{1-x}Ti_x)O_3$ (x=0.5) thin films on Pt-Ir($Pt_{80}Ir_{20}$)-alloy substrates. The as-deposited layer was dried on a plate in air at $70^{\circ}C$. And then it was baked at $1500^{\circ}C$, annealed at $450^{\circ}C$ and finally annealed for crystallization at various temperatures ranging from $580^{\circ}C$ to $700^{\circ}C$ for 1hour in a tube furnace. The thickness of the annealed film with three layers was $0.3{\mu}m$. Crystalline properties and surface morphology were examined using X-ray diffractometer (XRD). Electrical properties of the films such as dielectric constant, C-V, leakage current density were measured under different annealing temperature. The PZT thin film which was crystallized at $600^{\circ}C$ for 60minutes showed the best structural and electrical dielectric constant is 577. C-V measurement show that $700^{\circ}C$ sample has window memory volt of 2.5V and good capacitance for bias volts. Leakage current density of every sample show $10^{-8}A/cm^2$ r below and breakdown voltage(Vb) is that 25volts.

• Journal of the Korean Society of Safety
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• v.11 no.3
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• pp.81-88
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• 1996

In order to investigate the electrical properties of transformer oils for large power, the characteristics of AC and Impulse breakdown in gap length of 1.0~2.5mm and that of volume resistivity were researched in temperature range of 20~$100^{\circ}C$. An geometrical capacitance of electrode with coaxial cylindrical shape for measuring the volume resistivity was 16pF, and highmegohm meter with model no. VMG-1000 was used, and also the applied voltage were DC 100, 250 and 500V. In the dependance of breakdown characteristics due to electrode gap length, it was confirmed that breakdown voltage was nearly uniform by volume effect according to the increase of gap. In the characteristics for AC breakdown, the dielectric strength was increased to $90^{\circ}C$ but decreased over $90^{\circ}C$, and also in case of impulse breakdown, it was increased to 7$0^{\circ}C$ and at dated $70^{\circ}C$ over in temperature range. The calculated mobility of oils in the characteristics for impulse breakdown were about $10^{-5}$~$10^{-4}cm^2/V{\cdot}S$, and the value of volume resistivity was almost invariable in low temperature range, regardless of voltage by the stable thermal properties, and it indicated a peak at $50^{\circ}C$ and had a sudden change to decrease over that temperature, and also the value of volume resistivity in 250V/mm at $80^{\circ}C$ is suitable for the International electrical standards, it was confirmed.

• Proceedings of the KIEE Conference
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• 2000.07e
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• pp.35-39
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• 2000

$ZnIn_2S_4$ and $ZnGaInS_4:Er^{3+}$ single crystals crystallized in the rhombohedral (hexagonal) space group $C_{3v}^5(R3m)$, with lattice constants $a=3.852{\AA},\;c=37.215{\AA}$ for $ZnIn_2S_4$, and $a=3.823{\AA}$, and $c=35.975{\AA}$ for $ZnIn_2S_4:Er^{3+}$. The optical absorption measured near the fundamental band edge showed that the optical energy band structure of there compounds had a direct and indirect band gap, the direct and indirect energy gaps are found to be 2.778 and 2.682 eV for $ZnIn_2S_4$, and 2.725 and 2.651eV for $ZnIn_2S_4:Er^{3+}$ at 293 K. The photoluminescence spectra of $ZnIn_2S_4:Er^{3+}$ measured in the wavelength ranges of $500nm{\sim}900nm$ at 10 K. Eight sharp emission peaks due to $Er^{3+}$ ion are observed in the regions of $549.5{\sim}550.0nm,\;661.3{\sim}676.5nm$, and $811.1{\sim}834.1nm$, and $1528.2{\sim}1556.0nm$ in $CdGaInS_4:Er^{3+}$ single crystal. These PL peaks were attributed to the radiative transitions between the split electron energy levels of the $Er^{3+}$ ions occupied at $C_{2v}$, symmetry of the $ZnIn_2S_4$ single crystals host lattice.

• Bulletin of the Korean Chemical Society
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• v.19 no.11
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• pp.1175-1179
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• 1998

The aerobic reaction of 2-(acetylpyridine)-S-methyldithiocarbazate (acpy-mdtcH) and 2-(acetylpyridine)-N-phenylthiosemicarbazate(acpy-phTscH) with manganese(Ⅱ) acetate affords Mn(acpy-mdtc)2 and Mn(acpyphTsc)2, respectively. The spectroscopic data and X-ray structure of Mn(acpy-mdtc)2 are reported. Crystal data for Mn(acpy-mdtc)2; C18H20N6S4Mn, mol wt 503.58, monoclinic crystal system(P21/c) a=12.240(5) Å, b= 10.918(l) Å, c=17.651(3) Å, β=105.93(2), and V=2268(l) Å3, Z=4, 5071 data collected with 0°< 2θ < 52.64°, 2995 data with I > 3σ(I), R= 0.046, Rw= 0.065. The ligands act as tridentate NNS donors. The two Mn-S distances are not equal, and respectively 2.512(2) Å and 2.541(2) Å. The average Mn-N (azomethine) length, 2.242(5) Å, is slightly shorter than the average Mn-N (pyridyl) length, 2.262(5) Å. The coordination environment about MN(Ⅱ) center deviates considerably from octahedral geometry. The manganese(Ⅱ)-manganese(Ⅰ) and manganese(Ⅰ)-manganese(0) reduction potentials of Mn(acpy-mdtc)2 are ∼-l.71 and ∼-l.98 V while those of Mn(acpy-phTsc)2 are ∼-l.87 and ∼-2.11 V vs. Ag/Ag+ in dimethyl sulfoxide, respectively.

• Journal of computational fluids engineering
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• v.8 no.2
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• pp.1-7
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• 2003

The V2F turbulence model, which has shown very good performance in several test cases at low speeds, has been applied to supersonic ramp flow with 20. corner angle at the free stream Mach number of 2.79. The flow is known to manifest strong shock wave/turbulent boundary layer interactions. As a comparative study, low-Reynolds k-ε models are also considered. While the V2F model predicts wall-pressure distribution well, it relatively predicts larger separation bubble and higher skin-friction after the reattachment than the experimental data. Although the ellpticity of f equation is the characteristics of incompressible flows, the converged solutions are acquired in the compressible flow with shock waves. The effect of the realizability constraints used in the model is also examined. In contrast to the result of impinging jet flows, the realizability bounds proposed by Durbin deterioate the overall solutions of the supersonic ramp flow.

• KOREAN JOURNAL OF CROP SCIENCE
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• v.23 no.1
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• pp.51-54
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• 1978

3∼6m long plot with 3-4 replications will be practical for yield trials in the early hybrid generations. The C. V. values with 9m long plot was about 6.6％ in variety Yudal and 13.9％ in 12m plot. These results indicate that 9-12m plot with 3-4 replications could be employed in securate yield test in the advanced generations.

• Journal of IKEEE
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• v.28 no.2
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• pp.131-135
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• 2024

In this study, the sensor such as current transformer type was developed for measuring non-contact partial discharge in power electrical facilities, and the results of the characteristic evaluation were discussed. The frequency response characteristics of the HFCT sensor were shown to be measurable from 20 [kHz] to 20 [MHz]. The average sensitivity for the positive direction was 0.308 [mV/pC], and the negative direction was 0.459 [mV/pC]. Which showed that the sensitivity for the negative direction was better than that for the positive direction. The developed HFCT sensor is possible to measure very small partial discharge pulse signals and can be measured various types of partial discharge that may occur at power electrical facilities.

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.21 no.3
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• pp.18-29
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• 2022

Recently, cooperative intelligent transport systems (C-ITS) testbeds have been deployed in great numbers, and advanced autonomous driving research using V2X communication technology has been conducted actively worldwide. In particular, the broadcasting services in their beginning days, giving warning messages, basic safety messages, traffic information, etc., gradually developed into advanced network services, such as platooning, remote driving, and sensor sharing, that need to perform real-time. In addition, technologies improving these advanced network services' throughput and latency are being developed on many fronts to support these services. Notably, this research analyzed the network latency requirements of the advanced network services to develop a remote driving service for the droid type low-speed robot based on the 3GPP C-V2X communication technology. Subsequently, this remote driving service's performance was evaluated using system modeling (that included the operator behavior) and simulation. This evaluation showed that a respective core and access network latency of less than 30 ms was required to meet more than 90 % of the remote driving service's performance requirements under the given test conditions.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.226-229
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• 2004

A stoichiometric mixture of evaporating materials for $CuAlSe_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $CuAlSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $680^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuAlSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $9.24{\times}10^{16}\;cm^{-3}$ and $295\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuAlSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;2.8382\;eV\;-\;(8.68{\times}10^{-4}\;eV/K)T^2/(T+155K)$. The crystal field and the spin-orbit splitting energies for the valence band of the $CuAlSe_2$ have been estimated to be 0.2026 eV and 0.2165 eV at 10K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $CuAlSe_2$. The three photocurrent peaks observed at 10K are ascribed to the $A_1-$, $B_1-$, and $C_1$-exciton peaks for n = 1.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.179-180
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• 2007

Single crystal $AgGaSe_2$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at $420^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $AgGaSe_2$ source at $630^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $AgGaSe_2$ thin films measured with Hall effect by van der Pauw method are $4.05{\times}\;10^{16}/cm^3$, $139\;cm^2/V{\cdot}s$ at 293 K. respectively. The temperature dependence of the energy band gap of the $AgGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=1.9501\;eV\;-\;(8.79{\times}10^{-4}\;eV/K)T^2$/(T + 250 K). The crystal field and the spin-orbit splitting energies for the valence band of the $AgGaSe_2$ have been estimated to be 0.3132 eV and 0.3725 eV at 10 K, respectively, by means of the phcitocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the ${\Delta}So$ definitely exists in the $\Gamma_5$ states of the valence band of the $AgGaSe_2$. The three photocurrent peaks observed at 10 K are ascribed to the $A_1$-, $B_1$-, and $C_1$-exciton peaks for n = 1.