• Korean Journal of Agricultural Science
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• v.20 no.2
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• pp.103-108
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• 1993

This experiment was conducted to study the effects of pre-cultivation of chines milk vetch (Astragulas sinicus L.) on rice (Oryza sativa L, cv. Daecheongbye) growth and development. This experiment treatments were conducted by eight ; control 1 (stardard fertilizer ; N:P:K=0.3:0.2:0.2g/pot), control 2 (none fertilizer), root of C.M.V (chines milk vetch), shoot of C.M.V, whole plant of C.M.V, and root, shoot and whole plant of C.M.V+fertilizing N. Plant hight of rice was more than that control 1 in maximum tillering stage, heading stage and ripening stage. Tillering numbers per hill were the most in whole plant of C.M.V+fertilizing as whole growth and development period. And panicle per hill, spikelet per paincle, filled grain ratio and 1,000 grain weight were more in fertilized C.M.V than those control 1.

• KOREAN JOURNAL OF CROP SCIENCE
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• v.14
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• pp.87-90
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• 1973

Optimum plot shape and size in a uniformity trial in the newly founded experimental farm of KAERI were determined for seed yield with the basic units consisted of 2.5m $\times$ 0.6m plot. Various plot sizes and shapes were made by combination of the basic units. Coefficients of variations for yield were 21% in local branch type variety Kumkang-Dairip and 20% in the introduced branchless type variety Clark. This result indicates that the field in the new experimental farm is appropriate for soybean yield trials when adequate number of replications are employed in the field experiment. In general, C. V. values were gradually decreased with increase of plot sizes. Although the data were not consistant, the errors for the long narrow plots tend to have somewhat smaller than for the square shape plots. A sharp decrease in C.V. value was found from the $4.5\textrm{m}^2$ plot in the variety Kumkang-Dairip and from the $6\textrm{m}^2$ plot in the variety Clark. These results imply that 5-$6\textrm{m}^2$ plot could be used for yield trials in early generations of hybrid progenies. 2.5-5m long plot with 3-4 replications will be practical for yield trials in the early hybrid generations. The C.V. values with 7.5m long plot was about 16% in both varieties and 15.3% in 10m plot. These results indicate that 7.5-10m plot with 3-4 replications could be employed in accurate yield test in the advanced generations.

• KEPCO Journal on Electric Power and Energy
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• v.2 no.3
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• pp.421-424
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• 2016

In order to evaluate the insulation deterioration in the stator windings of air-cooled gas turbine generators(119.2 MVA, 13.8 kV) which has been operating for more than 15 years, diagnostic test and AC dielectric breakdown test were performed on phases A, B and C. Diagnostic test included measurements of AC current, dissipation factor, partial discharge (PD) magnitude and capacitance. ${\Delta}I$ and ${\Delta}tan{\delta}$ in all three phases (A, B, and C) of generator stator windings showed that they were in good condition but PD magnitude indicated marginally serviceable condition. After the diagnostic test, an AC overvoltage test was performed by gradually increasing the voltage applied to the generator stator windings until electrical insulation failure occurred, in order to determine the breakdown voltage. Although phase A of generator stator windings failed at breakdown voltage of 29.0 kV, phases B and C endured the 29.0 kV. The breakdown voltage in all three phases was higher than that expected for good-quality windings (28.6 kV) in a 13.8 kV class generator.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1449-1451
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• 2002

A developed 800kV class composite hollow insulator for $SF_6$ Gas Insulated Switchgear (GIS) was tested as to insulation with their surfaces contaminated. The wet power frequency withstand voltage of the silicone rubber housing was about 135kV at an equivalent salt deposite density of $5kg/m^2$, to sufficiently satisfy the required performance. According to IEC 60507, the salt fog withstand voltage was measured at 565kV, and the highest measured leakage current was below 0.2mA. Therefore, it was clarified that the composite hollow insulator has sufficient insulation performance even when it is contaminated on the surface.

• The Korean Journal of Mycology
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• v.28 no.2
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• pp.73-80
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• 2000

This study was carried out to investigate the optimal mycelial growth and an artificial cultivation conditions of Pleurotus eryngii. The optimal medium for the mycelial growth and density was MYPA medium. The optimal temperature and pH for the mycelial growth were $25^{\circ}C$ and 6.0, respectively. The modified optimal medium composition were obtained to be soluble starch 3%(w/v), malt extract 0.25%(w/v), yeast extract 0.25%(w/v) and $CaCl_2{\cdot}2H_2O$ 0.05% (w/v). From the results of experiment on the nutritional requirements, the modified optimal medium was higher than MYP medium in mycelial production and growth yield (Yx/s) of Pleurotus eryngii. The optimal sawdust species of solid culture for the mycelial growth and density was Quercus spp. The optimal concentration of additives (rice bran and wheat bran) and moisture content for the mycelial growth were about 30%(v/v) and 70%(v/v), respectively. On the other hand, the optimal concentration of additives for the production of fruiting body was 20%(v/v) of rice bran.

• Journal of the Korean Vacuum Society
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• v.6 no.3
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• pp.249-254
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• 1997

We investigated characteristics of Fe-doped semi-insulating InP by means of photoreflectance(PR) measurement. The band gap energy($E_0$) and broadening parameter($\Gamma$) from PR signals at 300K are 1.336 eV and 11.2 meV, respectively. As the temperature is decreased from 300 to 80 K, PR signals are varied from an overlapped shape of exciton and 2-dimensional band gap transitions(300 K) to that of exciton transition(80 K). We calculated Varshni coefficient($\alpha=0.94\pm$0.07 meV/K, $\beta=587\pm$35.2 K) and Bose-Einstein coefficient ($a_B=33.6{\pm}2.02meV$ , $\theta=165\pm$33K). After annealing of isothermal and isochronism crystallinity of InP is found to be excellent when annealed at $300^{\circ}C$ for 10~20 min, qualitatively.

• Journal of Dairy Science and Biotechnology
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• v.35 no.4
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• pp.255-261
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• 2017

The purpose of this study was to investigate the probiotic properties and antioxidant capacity of lactic acid bacteria isolated from Vietnamese feces and the Korean traditional food kimchi. Six isolated strains were identified as Lactobacillus sp. by 16S rRNA sequencing. All strains showed good resistance to low pH (1.5, 2.0, and 3.0) and 0.3% oxgall bile acids. Culture filtrates from the six strains showed various antioxidant effects, including DPPH, ABTS, reducing power, and metal chelating ($Fe^{2+}$) activities. Two of the six Lactobacillus strains showed potential probiotic activity. Heat resistance and adhesion assays were conducted by mixing the selected strains, Lactobacillus acidophilus V4, Lactobacillus plantarum V7, and Lactobacillus paracasei DK121 isolated from kimchi. The results showed that the heat resistance of these strains was similar to that of a commercial strain, L. plantarum LP. In addition, a mucin attachment assay using the mixture of selected strains (V4, V7, and DK121) showed high binding activity to the mucous layer. In conclusion, a mixture of V4, V7, and DK121 shows promising probiotic activity and may be useful for the development of health-related products.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.144-145
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• 2009

Single crystal $CdGa_2Se_4$ layers were grown on a thoroughly etched semi-insulating GaAs(100) substrate at $420^{\circ}C$ with the hot wall epitaxy (HWE) system by evaporating the poly crystal source of $CdGa_2Se_4$ at $630\;^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $CdGa_2Se_4$ thin films measured with Hall effect by van der Pauw method are $8.27\;\times\;10^{17}\;cm^{-3}$, $345\;cm^2/V{\cdot}s$ at 293 K, respectively. The photocurrent and the absorption spectra of $CdGa_2Se_4$/SI(Semi-Insulated) GaAs(100) are measured ranging from 293 K to 10K. The temperature dependence of the energy band gap of the $CdGa_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g$(T) = 2.6400 eV - ($7.721\;{\times}\;10^{-4}\;eV/K)T^2$/(T + 399 K). Using the photocurrent spectra and the Hopfield quasi cubic model, the crystal field energy(${\Delta}cr$) and the spin-orbit splitting energy(${\Delta}so$) for the valence band of the $CdGa_2Se_4$ have been estimated to be 106.5 meV and 418.9 meV at 10 K, respectively. The three photocurrent peaks observed at 10 K are ascribed to the $A_1$-, $B_1$-, and $C_{11}$-exciton peaks.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.45-49
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• 2001

We have investigated physical and electrical properties of the Hf $O_2$/HfS $i_{x}$/ $O_{y}$ thin film for alternative gate dielectrics in the metal-oxide-semiconductor device. The oxidation of Hf deposited directly on the Si substrate results in the H $f_{x}$/ $O_{y}$ interfacial layer and the high-k Hf $O_2$film simultaneously. Interestingly, the post-oxidation N2 annealing of the H102/H1Si70y thin films reduces(increases) the thickness of an amorphous HfS $i_{x}$/ $O_{y}$ layer(Hf $O_2$ layer). This phenomenon causes the increase of the effective dielectric constant, while maintaining the excellent interfacial properties. The hysteresis window in C-V curves and the midgap interface state density( $D_{itm}$) of Hf $O_2$/HfS $i_{x}$/ $O_{y}$ thin films less than 10 mV and ~3$\times$10$^{11}$ c $m^{-2}$ -eV without post-metallization annealing, respectively. The leakage current was also low (1$\times$10-s A/c $m^2$ at $V_{g}$ = +2 V). It is believed that these excellent results were obtained due to existence of the amorphous HfS $i_{x}$/ $O_{y}$ buffer layer. We also investigated the charge trapping characteristics using Fowler-Nordheim electron injection: We found that the degradation of Hf $O_2$/HfS $i_{x}$/ $O_{y}$ gate oxides is more severe when electrons were injected from the gate electrode.e electrode.e.e electrode.e.

• Journal of Sensor Science and Technology
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• v.16 no.6
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• pp.419-427
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• 2007

Single crystal $ZnIn_{2}S_{4}$ layers were grown on a thoroughly etched semi-insulating GaAs(100) substrate at $450^{\circ}C$ with the hot wall epitaxy (HWE) system by evaporating the polycrystal source of $ZnIn_{2}S_{4}$ at $610^{\circ}C$ prepared from horizontal electric furnace. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $ZnIn_{2}S_{4}$ thin films measured with Hall effect by van der Pauw method are $8.51{\times}10^{17}\;electron/cm^{-3}$, $291{\;}cm^{2}/v-s$ at 293 K, respectively. The photocurrent and the absorption spectra of $ZnIn_{2}S_{4}$/SI(Semi-Insulated) GaAs(100) are measured ranging from 293 K to 10 K. The temperature dependence of the energy band gap of the $ZnIn_{2}S_{4}$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)$=2.9514 eV. ($7.24{\times}10^{-4}\;eV/K$)$T^{2}$/(T+489 K). Using the photocurrent spectra and the Hopfield quasicubic model, the crystal field energy(${\Delta}cr$) and the spin-orbit splitting energy(${\Delta}so$) for the valence band of the $ZnIn_{2}S_{4}$ have been estimated to be 167.8 meV and 14.8 meV at 10 K, respectively. The three photocurrent peaks observed at 10 K are ascribed to the $A_{1}$-, $B_{1}$-, and $C_{41}$-exciton peaks.