• Journal of the Korean Electrochemical Society
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• v.5 no.4
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• pp.197-201
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• 2002

In this study, a gel polymer electrolyte was prepared from urethane acrylate and its electrochemical performances were evaluated. And, $LiCoO_2/GPE/graphite$ cells were prepared and their performances depending on discharge currents and temperatures were evaluated. The precursor containing $5 vol\%$ curable mixture had a low viscosity relatively. Ionic conductivity of the gel polymer electrolyte at room temperature and $-20^{\circ}C$ was ca. $5.9\times10^{-3}S{\cdot}cm^{-1}\;and\;1.7\times10^{-3}S{\cdot}cm^{-1}$, respectively. GPE showed electrochemical stability up to potential of 4.5V vs. $Li/Li^+.LiCoO_2/GPE/graphite$ cell showed a good high-rate and a low-temperature performance.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.9
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• pp.693-699
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• 1998

In this work $Cd_4GeS_6:Co^{2+}$(0.5mole%) single crystals were grown by the chemical transporting reactiov(CTR) method using high purity(6N) elements. The grown single crystals crystallized in a monoclinic structure(space group Cc). The direct optical energy gap of this single crystals was found to be 2.445eV at 300K and the temperature dependence of optical energy gap was fitted well to Varshni equation. But at temperatures lower than 70K an anomalous temperature dependence of the optical energy gap was obtained. This anomalous temperature dependence accored well with the anomalous temperature dependence of the unit cell volume. Also, the entropy, enthalpy and heat capacity were deduced from the temperature dependence of optical energy gaps.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.2
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• pp.162-170
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• 2004

A 900MHz CMOS RF power amplifier with digitally controllable output power has been proposed and designed with 0.6${\mu}{\textrm}{m}$ standard CMOS technology. The designed power amplifier was composed of digitally controllable switch mode pre-amplifiers with an integrated 4nH spiral inductor load and class-C output stage. Especially, to compensate the 1ow Q of integrated spiral inductor, cascode amplifier with a Q-enhancement circuit is used. It has been shown that the proposed power control technique allows the output power to change from almost 3dBm to 13.5dBm. And it has a maximum PAE(Power Added Efficiency) of almost 55％ at 900MHz operating frequency and 3V power supply voltage.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1972-1974
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• 2000

In this paper, we made an experiment on fault location of underground cables with travelling wave. The 5C2V coaxial cables of 100, 200m length, connected with discharge gap, are used for simplifying model cable lines of power cable. And 100KHz -2MHz CT and HV probe are installed at one side of the ends. We made travelling pulse in discharge gab and then pulse travelled along the cable to the both ends. Therefore, it is detected in CT and HV probe. Measuring the time difference of the pulse start and arrival, we were able to obtain the distance of pulse travelling. Consequently, our experimental results show the possibility to detect fault location of underground cables with travelling wave.

• Journal of the Semiconductor & Display Technology
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• v.10 no.3
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• pp.35-42
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• 2011

This paper describes the characteristics of high speed grinding and the influence of wheel surface speed V and a grindability of the grinding materials. The various fine ceramics pieces was ground by metal and vitrified bonded diamond wheel. The surface roughness of fine ceramics(Zirconia($ZrO_2$), Silicon Carbide(SiC), Silicon Nitride($Si_3N_4$), Alumina($Al_2O_3$)) decreases from $0.05{\mu}m(R_{max})$ to $0.025{\mu}m(R_{max})$ when the wheel speed at grinding point increases the wheel speed. Relation between the temperature at grinding point and surface roughness was linear. Abrasive jet machining(AJM), a specialized from of shot blasting, is considered one of the most helpful micro machining methods for hard and brittle materials such as glasses and ceramics by constant pressure grinding.

• JSTS:Journal of Semiconductor Technology and Science
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• v.10 no.2
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• pp.100-106
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• 2010

The impact of surface quantization on device parameters of a Si metal oxide semiconductor (MOS) capacitor has been analyzed in the present work. Variation of conduction band bending, position of discrete energy states, variation of surface potential, and the variation of inversion carrier concentration at charge centroid have been analyzed for different gate voltages, substrate doping concentrations and oxide thicknesses. Oxide thickness calculated from the experimental C-V data of a MOS capacitor is different from the actual oxide thickness, since such data include the effect of surface quantization. A correction factor has been developed considering the effect of charge centroid in presence of surface quantization at strong inversion and it has been observed that the correction due to surface quantization is crucial for highly doped substrate with thinner gate oxide.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2002.05a
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• pp.92-97
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• 2002

We establish a visible light emission from porous polycrystalline silicon nano structure(PPNS). The PPNS layer are formed on heavily doped n-type Si substrate. 2um thickness of undoped polycrystalline silicon deposited using LPCVD (Low Pressure Chemical Vapor Deposition) anodized in a HF: ethanol(=1:1) as functions of anodizing conditions. And then a PPNS layer thermally oxidized for 1 hr at $900 ^{\circ}C$. Subsequently, thin metal Au as a top electrode deposited onto the PPNS surface by E-beam evaporator and, in order to establish ohmic contact, an thermally evaporated Al was deposited on the back side of a Si-substrate. When the top electrode biased at +6V, the electron emission observed in a PPNS which caused by field-induces electron emission through the top metal. Among the PPNSs as functions of anodization conditions, the PPNS anodized at a current density of $10mA/cm^2$ for 20 sec has a lower turn-on voltage and a higher emission current. Furthermore, the behavior of electron emission is uniformly maintained.

• Structural Engineering and Mechanics
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• v.3 no.2
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• pp.145-162
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• 1995

A damped trapezoidal rule method for numerical time-integration is presented, and its application in analyses of dynamic response of damped structures is discussed. It is shown that the damped trapezoidal rule method has features that make it an attractive approach for applications in dynamic analyses of structures. Accuracy and stability analyses are developed for the damped single-degree-of-freedom systems. Error analyses are also performed for the Newmark beta method and compared with the damped trapezoidal rule method as a basis for discussion of the relative merits of the proposed method. The procedure is fully explicit and easy to implement. However, since the method is an explicit method, it is conditionally stable. The methodology is applied to several example problems to illustrate its strengths, limitations and inherent simplicity.

• Archives of Pharmacal Research
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• v.24 no.4
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• pp.286-291
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• 2001

Seven phenylpropanoid glycosides named acteoside (1), acteoside isomer (2), leucosceptoside A (3), plantainoside C (4), jionoside D (5), martynoside (6), and isomartynoside (7) were isolated from Clerodendron trichotomum. Compounds 1 and 2 showed potent inhibitory activities against HlV-1 integrase with $IC_{20}$ values of 7.8 ${\pm}$ 3.6 and 13.7 ${\pm}$ 6.0${\mu}\textrm{M}$, respectively.

• 유체기계공업학회:학술대회논문집
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• 2003.12a
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• pp.656-661
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• 2003

Modem reciprocating air compressors have tendency to a multi-stage W-type or V-type cylinder arrangement for the purpose of high outlet pressure, compactness and low vibration and noise. A valid counter weight calculation method using the complex expression is proposed for reducing the inertia forces of the compressor. Counter weight removes only 1st forward whirl component. Counter weight formulations are applied to the six various compressor structures which are (a) 1 cylinder single-throw crank shaft, (b) 2 cylinder single-throw crank shaft (c) 2 cylinder double-throw clank shaft, (d) 3 cylinder single-throw crank shaft, (e) 4 cylinder single-throw crank shaft and (f) 4 cylinder double-throw crank shaft. The improvement of performance is verified through available vibration test.