• Journal of Sinology and China Studies
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• v.79
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• pp.245-275
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• 2019

The Chinese language is a topic-prominent language and the ancient form of the language is not an exception. This literature examines the theta roles and cases of the arguments by setting sentence structures regarding 'TopP', which marks the eventuality meaning of 'DO', from the Analects of Confucius. Summary of the analysis is as follows: 1. Like the contemporary Chinese, ancient Chinese has two topic types; one is a base-generated topic(so called dangling topic) and the other is a topic generated by the interior movement in the TP. 2. The sentence structure of TopP from the Analects of Confucius that marks the eventuality meaning of 'DO' can be divided into seven categories which are: T+S+V+O', 'T+ES+V+EO', 'T+ES+V+EO', 'T+S+V+EC', 'T+ES+V+C', 'T+ES+V+O+C', 'T+S+V+EO+C'. 3. The predicate(V-v) of TopP from the Analects of Confucius that marks the eventuality meaning of 'DO' has a meaning characteristics of [+ will] and [+ progressive]. 4. The subject of TopP from the Analects of Confucius that marks the eventuality meaning of 'DO' is assigned a thematic role of an , and the object is assigned a thematic role of a . 5. The complement of TopP from the Analects of Confucius that marks the eventuality meaning of 'DO' is composed of overt preposition head and its complements, which receives diverse thematic roles from the preposition. However, it does not have a direct selective relationship but an indirect relationship with the main verb of the sentence. 6. Every argument, which is the subject, object, complement, and adverb, of TopP from the Analects of Confucius that marks the eventuality meaning of 'DO' can theoretically be moved in front of the subject and be topicalized. 7. The topic phrase from the Analects of Confucius that marks the eventuality meaning of 'DO' is derived in the order of predicate(V-v), object, complement, adjunct, subject, and topic, but when interpreting it in Korean it is in inverse order, which is in the order of topic, subject, adjunct, complement, object and predicate(V-v).

• Applied Chemistry for Engineering
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• v.25 no.5
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• pp.531-537
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• 2014

A catalytic plasma reactor was employed for the oxidation of isopropyl alcohol (IPA) classified as a volatile organic compound (VOC). Copper oxide (Cu : 0.5% (w/w)) supported on a multichannel porous ceramic consisting of ${\alpha}-Al_2O_3$ was used as a catalyst, which was directly exposed to the plasma created in it. The effects of discharge voltage and reaction temperature on the concentrations of IPA and its byproducts were examined to understand the behavior of the catalytic plasma reactor. Without thermal insulation, the reactor temperature increased up to $120^{\circ}C$ at an applied voltage of 17 kV (discharge power : 28 W), and the IPA at a flow rate of $1L\;min^{-1}$ ($O_2$ : 10% (v/v); IPA : 1000 ppm) was completely removed. At temperatures below $120^{\circ}C$, however, besides the desirable product $CO_2$, several unwanted byproducts such as acetone, formaldehyde and CO were also formed from IPA. On the other hand, when the reactor was thermally insulated, the plasma discharge increased the temperature up to $265^{\circ}C$ under the same condition and most of IPA was oxidized to $CO_2$. Without loading CuO on the ceramic support, the plasma discharge in the thermally insulated reactor produced nearly equal amounts of $CO_2$ and CO. On comparison, with the catalyst alone (temperature : $265^{\circ}C$), more than 70% of the removed IPA was simply converted into another type of VOC (acetone), indicating that the catalyst assisted by the plasma is more effective in the oxidation of IPA than that of the catalyst-alone process.

• Journal of fish pathology
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• v.6 no.2
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• pp.111-122
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• 1993

The mechanism by which $V_H$ region gene segments is selected in B lymphocyte is not known. Moreover, evidence for both random and nonrandom expression of $V_H$ genes in matured B cells has been presented previously. In this report, the technique of in situ hybridization allowed us to analyze expressed $V_H$ gene families in normal B lymphocyte at the single cell level. The analysis of normal B cells in this study eliminated any posssible bias resulting from transformation protocols used previously and minimized limitation associated with sampling size. Therefore, an accurate measure of the functional and expressed $V_H$ gene repertoire in B lymphocyte could be made. One of the most important controls for the optimization of in situ hybridization is to establish probe concentration and washing stringency due to the degree of nucleotide sequence similarlity between different families which in some cases can be as high as 70%. When the radioactive $C{\mu}$ and $V_{H}J558$ RNA probes are tested on LPS-stimulated adult spleen cells, $2{\sim}4{\times}106cpm$/slide shows low background and reasonable frequency of specific positive cells. For the washing condition. 40~50% formamide at $54^{\circ}C$ is found to be optimum for the $C{\mu}$. $V_{H}S107$ and $V_{H}J558$ probes. The analyzed results clearly demonstrate that the level of each different $V_H$ gene family expression is dependent upon the complexity or size of that family. These findings are also extended to the level of $V_H$ gene family expression in separated bone marrow B cells depend upon the various stage of differentiation and conclude no preferential utilization of specific $V_H$ gene family. Thus, the utilization of VH gene segments in B lymphocyte of adult BALB/c mice is random and is not regulated or changed during the differentiation of B cells.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.333-334
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• 2007

This paper describes the characteristics of poly (polycrystalline) 3C-SiC grown on SiOz and AlN substrates, respectively. The crystalline quality of poly 3C-SiC was improved from resulting in decrease of FWHM (full width half maximum) of XRD by increasing the growth temperature. The minimum growth temperature of poly 3C-SiC was $1100^{\circ}C$. The surface chemical composition and the electron mobility of poly 3C-SiC grown on each substrate were investigated by XPS and Hall Effect, respectively. The chemical compositions of surface of poly 3C-SiC films grown on $SiO_2$ and AlN were not different. However, their electron mobilities were $7.65\;cm^2/V.s$ and $14.8\;cm^2/V.s$, respectively. Therefore, since the electron mobility of poly 3C-SiC films grown on AlN buffer layer was two times higher than that of 3C-SiC/$SiO_2$, a AlN film is a suitable material, as buffer layer, for the growth of poly 3C-SiC thin films with excellent properties for M/NEMS applications.

• Korean Journal of Materials Research
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• v.11 no.4
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• pp.278-282
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• 2001

The recombination motion of Partial dislocations on basal slip (0001) 1/3<1120> in sapphire ($\alpha$-Al$_2$$O_3$) single crystals was investigated using the four-point bending test with the prism plane (1120) samples. These bending experiments were carried but in the temperature range from $1200^{\circ}C$ to $1400^{\circ}C$ at various engineering stresses 90MPa, 120MPa, and 150MPa. During these tests it was shown that an incubation time was needed for basal slip to be activated. The activation energy for the incubation time was 5.6-6.0eV in the temperature range from $1200^{\circ}C$ to $1400^{\circ}C$. The incubation time is believed to be related to recombination of climb dissociated partial dislocations via self-climb. In addition, these activation energies are nearly same as those for oxygen self-diffusion in $Al_2$$O_3$ (approximately 6.3 eV). Thus, the recombination of the two partial dislocations would be possibly controlled by oxygen diffusion on the stacking fault between the partials.

• Journal of Auto-vehicle Safety Association
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• v.7 no.2
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• pp.39-43
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• 2015

NDIR (Non-dispersive infrared Rays) alcohol sensor has been prototyped and its temperature characteristics were measured. In order to design novel optical alcohol sensor, elliptical structures with one common foci were modeled and analyzed their optical properties. After analyzing elliptic optical structures, a prototype alcohol sensor module was tested according to the temperature variations from $-20^{\circ}C$ to $35^{\circ}C$. The offset voltages of alcohol sensor decreased from 1.1056 V at the temperature $-20^{\circ}C$ to 0.7339 V at $35^{\circ}C$. However, the highest sensitivity of alcohol sensor showed about $303{\mu}V/ppm$ at room temperature.

• Proceedings of the KIPE Conference
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• 2015.11a
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• pp.85-86
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• 2015

In this paper, the bidirectional DC-DC converter is composed of the 900V Silicon-Carbide(SiC) devices to get high efficiency. The 900V SiC device is better than a similar current rated traditional SiC device. it has a lower drain-source resistance and output capacitance. therefore it can reduce the switching and the conduction losses of the DC-DC converter. The experimental results verify the improvement of efficiency and usefulness of 900V SiC device.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.20.1-20.1
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• 2009

반도체 소자 제조 공정 프로그램인 T-suprem4와 MEDICI를 이용하여 NMOS구조를 설계 하였다. MOS 소자 시뮬레이션을 통해 식각 공정에서 생기는 언더컷에 의한 전기적 특성을 I-V 곡선으로 비교하여 분석하였다. NMOS 구조는 반도체 소자 제조 공정 프로그램 T-suprem4를 이용하여 기본 소자 구조를 설계하였다. 실험의 변수로는 첫째, 소자 공정 중 폴리 실리콘의 언더컷 식각의 각도를 $70^{\circ}C$부터 $110^{\circ}C$까지 $10^{\circ}C$의 차이로 설계하였다. 또한, 언더컷에 의한 드레인-소스사이의 전류($I_{DS}$) 손실이 없는 유효한 각도를 확인하기 위해 $80^{\circ}C$부터 $100^{\circ}C$까지는 $2^{\circ}C$ 크기로 설계 하였다. 둘째, 게이트 크기를 축소하고 역시 언더컷 식각의 각도를 다양하게 설계하였다. 설계된 소자를 반도체 소자 특성 분석 프로그램 MEDICI를 이용하여 소자의 전기적 특성을 측정하였다. 우선 NMOS소자 게이트에 2V의 전압을 인가하였다. 그리고 드레인 부분에 전압을 인가하여 그에 따른 드레인의 전류를 측정 하였다. 드레인 전압은 0V 부터 변화시키며 인가하였다. 측정된 전류 값으로 I-V 곡선을 나타내었다. I-V 곡선의 분석을 통해 식각 후 언더컷의 각도가 $70^{\circ}C$, $80^{\circ}C$, $110^{\circ}C$ 일 때 $4\times10^{-8}A/{\mu}$의 전류가 흐르고, $90^{\circ}C$, $100^{\circ}C$ 일 때는 $1.8\times10^{-7}A/{\mu}$의 전류가 흐르는 것을 확인 하였다. $80^{\circ}C$에서 $100^{\circ}C$까지는 $2^{\circ}C$ 크기로 측정한 결과 $88^{\circ}C$에서 $100^{\circ}C$ 사이 일 때 $90^{\circ}C$ 각도의 경우와 같이 $1.8\times10^{-7}A/{\mu}$의 전류가 측정 되었다. 즉, 식각 중 수직 측벽 도에 언더컷이 $10^{\circ}C$이상 발생하면 $I_{DS}$ 전류 값이 약 22%로 감소하였다. 또한 일반적으로 $90^{\circ}C$의 수직측벽을 가지는 공정이 중요하다고만 생각 되었지만, 이번 연구를 통하여 식각 후 측벽의 각도가 $88^{\circ}C$에서 $92^{\circ}C$ 사이에 있을 때 $I_{DS}$ 값이 가장 최대가 되는 것을 확인 할 수 있었다.

• Journal of the Korea Computer Industry Society
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• v.3 no.12
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• pp.1747-1758
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• 2002

In order to study the electrical properties of silicone gel due to the curing condition, AC breakdown test is researched. For experiment, we have made up several samples cured during each 30[Min], 1[H], 2[H] at 100[$^{\circ}C$], 125[$^{\circ}C$], 150[$^{\circ}C$], 160[$^{\circ}C$], 170[$^{\circ}C$], 180[$^{\circ}C$]. The equipment for this test can measure the dipole output voltage to 50[kV], with increasing rate of about 3[kV] per second. A material of electrode using to the breakdown test is a copper(purity : 99%), the gap between electrodes is to 1[mm]~3[mm], and it thickness is 0.2[mm]. As a result of the experiment, the electrical properties of specimen cured at 170[$^{\circ}C$] for 2[H] is superior.

• Journal of the Korean Vacuum Society
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• v.17 no.1
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• pp.28-33
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• 2008

Lanthanum modified lead zirconate titanate ($Pb_{1.1}La_{0.08}Zr_{0.65}Ti_{0.35}O_3$) thin films were fabricated on indium doped tin oxide (ITO)-coated glass substrate by R.F magnetron sputtering method. The thin films were deposited at $500^{\circ}C$ and post-annealed with various temperature ($550-750^{\circ}C$) by rapid thermal annealing technique. The structure and morphology of the films were characterized with X-ray diffraction (XRD) and atomic force microscopy (AFM) respectively. The hysteresis loops and fatigue properties of thin films were measured by precision material analyzer. As the annealing temperature was increased, the remnant polarization value was increased from $10.6{\mu}C/cm^2$ to $31.4{\mu}C/cm^2$, and coercive field was reduced from 79.9 kV/cm to 60.9 kV/cm. As a result of polarization endurance analysis, the remnant polarization of PLZT thin films annealed at $700^{\circ}C$ was decreased 15% after $10^9$ switching cycles using 1MHz square wave form at ${\pm}5V$.