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Effects of Postoperative Radiation Therapy for Prevention of Keloids and Hypertrophic Scars (켈로이드와 비후성 반혼에서 재발을 방지하기 위한 수술후 방사선치료의 효과)

  • Kang, Ki-Mun;Choi, Ihl-Bohng;Kim, In-Ah;Jang, Jee-Young;Shinn, Kyung-Sub
    • Radiation Oncology Journal
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    • v.15 no.3
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    • pp.269-276
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    • 1997
  • Purpose : To evaluate the effects of surgical excision followed by radiation therapy for Prevention of keloids and hypertrophic scars. Materials and Methods : From October 1987 to April 1995, radiation therapy was applied to 167 sites in 106 patients with surgical excision in an attempt to prevention of recurrence against keloids and hypertrophic scars. The main etiology of the keloids and hypertrophic scars were surgery in $49.2\%,\;trauma\;in\;25.0\%,\;ear-piercing\;in\;5.4\%,\;and\;burn\;in\;5.4\%$, The Patients' ages ranged from 3 to 70 years with a median of 32 years. Radiation therapy used ranged from 6 to 8MeV electron beam. Radiation therapy was delivered within 24 hours of surgical excision. Several dose schedules were used, varing from 400cGy in 1 daily fraction to 1900cGy in 4 daily fractions. The average total dose was 1059cGy, and the average dose per fraction was 433cGy. All patients were followed up from 24 to 114 months with a median follow up of 49 months. Results : The overall recurrence rate was $12.6\%$ (21/167) The overall 1-year and 2-year recurrence rates were $10.2\%\;and\;11.4\%$, respectively Among 21 recurrent sites, seventeen sites $(81\%)$ were confirmed within 12 months after surgical excision. Period to recurrence ranged from 1 month to 47 months with a median recurrence time of 9.6 months, The history of previous therapy was only a significant factor in recurrence. Twenty-four patients had history of previous therapy recurrence rates was significantly higher in this group than those without history of Previous therapy $(22.6\%\;vs.\;11.0\%,\;p=0.04)$. There was no serious complication related to radiation therapy. Conclusion : This study suggests that surgical excision followed by radiation therapy is an effective method of preventing keloids and hypertrophic scars.

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Mechanism of Erectogenic Effect of the Selective Phosphodiesterase Type 5 Inhibitor, DA-8159

  • Doh, Hyoun-Mie;Shin, Chang-Yell;Son, Mi-Won;Ko, Jun-Il;Yoo, Moo-Hi;Kim, Soon-Hoe;Kim, Won-Bae
    • Archives of Pharmacal Research
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    • v.25 no.6
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    • pp.873-878
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    • 2002
  • OA-8159, a new Phosphodiesterase (PDE) 5 inhibitor, has exhibited potent erectogenic potential in a penile erection test in rats and anesthetized dogs. In this study, we investigated the mechanism of its erectogenic activity by measuring the activity of OA-8159 against a various PDE isozymes and assessing cGMP and cAMP formation in a rabbit corpus cavernosum in vitro. DA-8159 inhibited the PDE 5 activity in rabbit and human platelets, which the $IC_{50}$ was 5.84$\pm$1.70 nM and 8.25$\pm$2.90 nM, respectively. The $IC_{50}$ of DA-8159 on PDE 1, PDE2, PDE 3 and PDE 6 were 870$\pm$57.4 nM, $101\pm$5 $\mu$M, 52.0$\pm$3.53 $\mu$M and 53.3$\pm$2.47 nM, respectively. This suggests that DA-8159 is a potent, highly selective, competitive inhibitor of PDE 5-catalyzed cGMP hydrolysis. The rates of cGMP hydrolysis catalyzed by human platelets-derived PDE 5 as a function of the cGMP concentration (5~100 nM) and two-fixed DA-8159 concentration (11.3 and 18.8 nM) were investigated in order to characterize the mode of PDE 5 inhibition by DA-8159. DA-8159 increased the apparent 4K_{m}$ value for cGMP hydrolysis but had no effect on the apparent $V_{max}$, indicating a competitive mode of inhibition. DA-8159 increased the cGMP concentrations in the rabbit corpus cavernosum dose dependently. In the presence of sodium nitroprusside (SNP), DA-8159 significantly sti\mulated the accu\mulation of cGMP when compared to the control level. This indicated that the enhancement of a penile erection by DA-8159 involved the relaxation of the cavernosal smooth \muscle by NO-sti\mulated cGMP accu\mulation. In conclusion, DA-8159 is a selective inhibitor of PDE 5-catalyzed cGMP hydrolysis and the enhancement of a penile erection by DA-8159 is mediated by the relaxation of the cavernosal smooth \muscle by the NO-sti\mulated cGMP accu\mulation.

Genetic variation of sensitivity to photoperiod and accumulated temperature in soybean mini core collection lines

  • Islam, Md Rasadul;Fujita, Daisuke;Zheng, Shao-Hui
    • Proceedings of the Korean Society of Crop Science Conference
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    • 2017.06a
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    • pp.77-77
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    • 2017
  • The sensitivities to photoperiod and temperature give guidance to choose an adaptable genotype for specific area in soybean production. However, there is insufficient information about the variation of sensitivities to photoperiod and temperature with wide genetic background. We investigated the sensitivities to photoperiod and temperature using 82 soybean mini core collection lines provided by NIAS gene bank of Japan. The seeds were sown on 28 May and 4 August in 2015, 24 May and 5 August in 2016 at field in Saga, Japan ($33^{\circ}$ 14' 32'' N, $130^{\circ}$ 17' 28'' E) for the early (average photoperiod and temperature: 15.2 h and $25.1^{\circ}C$) and late (13.6 h and $27.2^{\circ}C$) sowing respectively. The plants were also grown in the growth chamber under 12 h photoperiod with three temperature regimes (day/night temperature: $25/18^{\circ}C$, $28/22^{\circ}C$ and $33/28^{\circ}C$). Emergence date, days to first flower were recorded with 10 plants in the field and 2 plants in the growth chamber for each line. The data for daily average temperatures and photoperiodic hours were collected from weather station. The days from emergence to first flower open (DEF) were varied from 23-92 (2015 and 2016) in early sowing whereas 18-68 (2015) and 18-59 (2016) in late sowing. The shortened DEF in late sowing could be caused by both short photoperiod and high temperature in late sowing. However, the accumulated temperatures during emergence to first flower open (ATEF) were less variable in comparison with DEF, suggesting the ATEF is dependent mostly on the photoperiod. The ATEF were found same between early and late sowing in some early flowering lines (e.g. $686.7^{\circ}C$ and $687.6^{\circ}C$ in HEUKDAELIPS, $728.8^{\circ}C$ and $706.3^{\circ}C$ in WILLIAMS'82) which indicated that these would be insensitive to day length. In the growth chamber experiment, the variation in both DEF and ATEF was a little greater at low temperature ($25/18^{\circ}C$) but almost same at middle ($28/22^{\circ}C$) and high ($33/28^{\circ}C$) temperatures. Since the less differences in ATEF were found between the three temperatures, it is suggested that the temperature plays only a quantitative effect on the flower initiation, and the large ATEF in some lines may indicate the stronger photosensitivity even at 12 h or longer juvenile phase. Some lines with the lowest ATEF regardless of growth conditions, such as FISKEBY V, KE 32 (ATEF: 559.6-666.5, 587.7-709.5) might lack the sensitivities to both photoperiod and temperature. The results suggested that soybean genotypes has wider variation in sensitivity to photoperiod, whereas less variation to temperature.

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Piezoelectric properties of lead-free NKNLTS ceramics with $Bi_2O_3$ addition ($Bi_2O_3$첨가에 따른 무연 NKNLTS계 세라믹스의 압전특성)

  • Lee, Youn-Ki;Lee, Eun-Hee;Woo, Duck-Hyun;Ahn, Sang-Ki;Kwon, Soon-Yong;Ryu, Sung-Lim
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.06a
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    • pp.184-184
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    • 2009
  • Lead-free Piezoelectric $[Li_{0.04}(Na_{0.44}K_{0.56})](Nb_{0.88}Ta_{0.1}Sb_{0.02})$ (abbreviated as NKNLTS) has been synthsized by conventional mixed oxide method traditional ceramics process without cold-isostatic pressing. Effect of $Bi_2O_3$ addition on NKNLTS ceramics was investigated. Piezoelectric properties of the ceramic were varied with the amount of $Bi_2O_3$ addition and showed the maximum Kp value at 0.4wt% $Bi_2O_3$ addition. The results show that the optimum poling condition for NKNLTS ceramics of 3.5kV/mm, poling temperature of $120^{\circ}C$ and poling time of 30min. At the sintering temperature of $1100^{\circ}C$ and the calcination temperature $800^{\circ}C$, the optimal values of density=$4.7g/cm^2$, Kp=0.44, $\varepsilon_r$=1309 were obtained. Consequently, lead free piezoelectric ceramics with the excellent piezoelectric could be fabricated using a conventional mixed oxide process and the optimal manuacturing condition of those was obtained.

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STudies on the Cellulolytic Enzymes of Stachybotrys atra (Stachybotrys atra에서 추출한 섬유소분해효소에 관한 연구 II)

  • 김영민;김은수
    • Korean Journal of Microbiology
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    • v.14 no.3
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    • pp.117-127
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    • 1976
  • A cellulase fraction (F IV-1) purified to about 8-folds was obtained from crude cellulase prepared from the wheat bran culture of S.atra. The partial purification of the enzyme was made by DEAE Sephadex and Sephdex cloumn chromatography in conjuction with ammonium sulfate precipitation. After stading at various pH's for 22 hours at $20^{\circ}C$, F IV-1 was most stable at pH 5.0 but when the enzyme fraction was stood for 74 hours, the point of pH stability was raised to around pH 6.0-7.0. After heating at various temperatures for 1 hour, F IV-1 was most stable at $20^{\circ}C$. The optimal enzyme activities of F IV-1 were seen at pH 6.0 and $50^{\circ}C$. The optimal concentrations of $Zn^{++}\;and\;Ca^{++}$ for the activities of crude cellulase were 6 and 4 mM respectively, but $Ca^{++}$ inhibited the enzyme activity at concentrations below 2 mM and above 6mM. Both $Cu^{++}\;and\;Mn^{++}$ ions inhibited cellulase activities and a ocmplete inactivation of crude cellulase was achieved at concentratioins of 5 and 2 mM of ions respectively. When Na-CMC was used as substrate, the Km values of crude cellulase and F IV-1 were calculated to be $5{\times}10^{-4}\;and\;2{\times}10^{-5}mM$, and V values 32 and 1.35 mmoles/hour, respectively. The Ki values of $Mn^{++}$ for crude cellulase and F IV-1 were found to be $8{\times}10^{-2}\;and\;3{\times}10^{-2}\;mM\;while\;those\;of\;Cu^{++}\;were\;at\;2{\times}10^{-1}\;and\;1{\times}10^{-1}\;mM\;respectively.\;Both\;Mn^{++}\;and\;Cu^{++}$ showed competitive inhibition with substrate.

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Effect of Seed-layer on the Crystallization and Electric Properties of SBN60 Thin Films (SBN60 박막의 결정화 및 전기적 특성에 관한 씨앗층의 영향)

  • Jang, Jae-Hoon;Lee, Dong-Gun;Lee, Hee-Young;Jo, Sang-Hee
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07b
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    • pp.723-727
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    • 2003
  • [ $Sr_xBa_{1-x}Nb_2O_6$ ] (SBN, $0.25{\leq}x{\leq}0.75$) ceramic is a ferroelectric material with tetragonal tungsten bronze (TTB) type structure, which has a high pyroelectric coefficient and a nonlinear electro-optic coefficient value. In spite of its advantages, SBN has not been investigated well compared to other ferroelectric materials with perovskite structure. In this study, SBN thin film was manufactured by ion beam sputtering technique using the prepared SBN target in $Ar/O_2$ atmosphere. SBN30 thin film of $1000{\AA}$ was pre-deposited as a seed layer on $Pt(100)/TiO_2/SiO_2/Si$ substrate followed by SBN60 deposition up to $3000{\AA}$ in thickness. As-deposited SBN60/SBN30 layer was heat-treated at different temperatures of 650, 700, 750, and $800^{\circ}C$ in air, respectively The crystallinity and orientation behavior as well as electric properties of SBN60/SBN30 multi-layer were examined. The deposited layer was uniform and the orientation was shown primarily along (001) plane from XRD pattern. There was no difference in the crystal structure with heat-treatment temperature, but the electric properties depended on the heating temperature and was the best at $750^{\circ}C$. In electric properties of Pt/SBN60/SBN30/Pt thin film capacitor prepared, the remnant polarization (2Pr) value was $15{\mu}C/cm^2$, the coercive field (Ec) 75 kV/cm, and the dielectric constant 1075, respectively.

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[ $NO_2$ ] Gas Sensing Characteristics of Carbon Nanotubes (탄소 나노튜브를 이용한 이산화질소 감지 센서의 특성)

  • Lee R. Y.
    • Journal of the Microelectronics and Packaging Society
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    • v.12 no.3 s.36
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    • pp.227-233
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    • 2005
  • Carbon nanotubes (CNT) which were grown, on the alumina substrate with a pair of comb-type Au electrodes, by plasma enhanced chemical vapor deposition have been investigated for $NO_2$ gas sensor. The electrical resistance of CNT film decreased with temperature, indicating a semiconductor type of CNT, and also the resistance of CNT sensor decreased with increasing $NO_2$ concentration. Upon exposure to $NO_2$ gas, the electrical resistance of CNT film sensor rapidly decreased within 3 minutes, and then showed a constant value after $20\~30$ minutes. It is found that the sensitivity of CNT sensor has been improved by air oxidation. The CNT sensor oxidized at $450^{\circ}C$ for 30 minutes showed higher sensitivity value than that without oxidation by $27\%$, even for a low 250 ppb $NO_2$ concentration at operating temperature of $200^{\circ}C$. But it needs a recovery time more than 20 minutes for reuse after detection of $NO_2$ gas.

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In Situ X-ray Photoemission Spectroscopy Study of Atomic Layer Deposition of $TiO_2$ on Silicon Substrate

  • Lee, Seung-Youb;Jeon, Cheol-ho;Kim, Yoo-Seok;Kim, Seok-Hwan;An, Ki-Seok;Park, Chong-Yun
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.08a
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    • pp.222-222
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    • 2011
  • Titanium dioxide (TiO2) has a number of applications in optics and electronics due to its superior properties, such as physical and chemical stability, high refractive index, good transmission in vis and NIR regions, and high dielectric constant. Atomic layer deposition (ALD), also called atomic layer epitaxy, can be regarded as a special modification of the chemical vapor deposition method. ALD is a pulsed method in which the reactant vapors are alternately supplied onto the substrate. During each pulse, the precursors chemisorb or react with the surface groups. When the process conditions are suitably chosen, the film growth proceeds by alternate saturative surface reactions and is thus self-limiting. This makes it possible to cover even complex shaped objects with a uniform film. It is also possible to control the film thickness accurately simply by controlling the number of pulsing cycles repeated. We have investigated the ALD of TiO2 at 100$^{\circ}C$ using precursors titanium tetra-isopropoxide (TTIP) and H2O on -O, -OH terminated Si surface by in situ X-ray photoemission spectroscopy. ALD reactions with TTIP were performed on the H2O-dosed Si substrate at 100$^{\circ}C$, where one cycle was completed. The number of ALD cycles was increased by repeated deposition of H2O and TTIP at 100$^{\circ}C$. After precursor exposure, the samples were transferred under vacuum from the reaction chamber to the UHV chamber at room temperature for in situ XPS analysis. The XPS instrument included a hemispherical analyzer (ALPHA 110) and a monochromatic X-ray source generated by exciting Al K${\alpha}$ radiation (h${\nu}$=1486.6 eV).

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Gas sensing properties of CuO nanowalls synthesized via oxidation of Cu foil in aqueous NH4OH (NH4OH 수용액 하에서 Cu 호일의 산화를 통해 합성한 CuO 나노벽의 가스센싱 특성)

  • ;;;Lee, Si-Hong;Lee, Sang-Uk;Lee, Jun-Hyeong;Kim, Jeong-Ju;Heo, Yeong-U
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2018.06a
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    • pp.141-141
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    • 2018
  • Copper is one of the most abundant metals on earth. Its oxide (CuO) is an intrinsically p-type metal-oxide semiconductor with a bandgap ($E_g$) of 1.2-2.0 eV 1. Copper oxide nanomaterials are considered as promising materials for a wide range of applications e.g., lithium ion batteries, dye-sensitized solar cells, photocatalytic hydrogen production, photodetectors, and biogas sensors 2-7. Recently, high-density and uniform CuO nanostructures have been grown on Cu foils in alkaline solutions 3. In 2011, T. Soejima et al. proposed a facile process for the oxidation synthesis of CuO nanobelt arrays using $NH_3-H_2O_2$ aqueous solution 8. In 2017, G. Kaur et al. synthesized CuO nanostructures by treating Cu foils in $NH_4OH$ at room temperature for different treatment times 9. The surface treatment of Cu in alkaline aqueous solutions is a potential method for the mass fabrication of CuO nanostructures with high uniformity and density. It is interesting to compare the gas sensing properties among CuO nanomaterials synthesized by this approach and by others. Nevertheless, none of above studies investigated the gas sensing properties of as-synthesized CuO nanomaterials. In this study, CuO nanowalls versus nanoparticles were synthesized via the oxidation process of Cu foil in NH4OH solution at $50-70^{\circ}C$. The gas sensing properties of the as-prepared CuO nanoplates were examined with $C_2H_5OH$, $CH_3COCH_3$, and $NH_3$ at $200-360^{\circ}C$.

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Preparation and Electrical properties of the PLT(28) Thin Film (PLT(28) 박막의 제작과 전기적 특성에 관한 연구)

  • 강성준;정양희
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2002.11a
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    • pp.784-787
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    • 2002
  • We prepared the PLT(28) thin film by using sol-gel method and investigated the structure and electrical properties of the film. With the XRD and AFM analyses, it is found that PLT(28) thin film annealed at 6sot has a complete perovskite structure and its surface roughness is about 22$\AA$. We prepared PLT(28) thin film on the Pt/TiO$_{x}$SiO$_2$/Si substrate, in which the specimen has a planar capacitor structure, and analyzed the electrical properties of PLT(28) thin film. In result, PLT(28) thin film has a paraelectric phase and its dielectric constant and loss tangent at 10kHz are 761 and 0.024, respectively. Also, the storage charge density and leakage current density of PLT(28) thin film at W are 134fC/$\mu$m2 and 1.01 $\mu$A/cm2, respectively. As a result of this, we concluded that the PLT(28) thin film is a promising material to be used as a capacitor dielectrics for next generation DRAM.M.

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