• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04b
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• pp.56-59
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• 2004

The stochiometric composition of $AgGaS_2$ polycrystal source materials for the $AgGaS_2/GaAs$ epilayer was prepared from horizontal furnace. From the extrapolation method of X-ray diffraction patterns it was found that the polycrystal $AgGaS_2$ has tetragonal structure of which lattice constant $a_0$ and $c_0$ were 5.756 ${\AA}$ and 10.305 ${\AA}$, respectively. $AgGaS_2/GaAs$ epilayer was deposited on throughly etched GaAs (100) substrate from mixed crystal $AgGaS_2$ by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $590^{\circ}C$ and $440^{\circ}C$ respectively. The crystallinity of the grown $AgGaS_2/GaAs$ epilayer was investigated by the DCRC (double crystal X-ray diffraction rocking curve). The optical energy gaps were found to be 2.61 eV for $AgGaS_2/GaAs$ epilayer at room temperature. The temperature dependence of the photocurrent peak energy is well explained by the Varshni equation, then the constants in the Varshni equation are given by ${\alpha}=8.695{\times}10^{-4}eV/K$, and $\beta$=332 K. From the photocurrent spectra by illumination of polarized light of the $AgGaS_2/GaAs$ epilayer, we have found that crystal field splitting $\Delta$ Cr was 0.28 eV at 20 K. From the PL spectra at 20 K, the peaks corresponding to free and bound excitons and a broad emission band due to D-A pairs are identified. The binding energy of the free excitons are determined to be 0.2676 eV and 0.2430 eV and the dissociation energy of the bound excitons to be 0.4695 eV.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.6
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• pp.24-33
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• 2000

Switching behaviour of the ferroelectric thin film and device characteristics of the MFSFET(Metal-Ferroelectric-Semiconductor FET) are simulated with taking into account the accumulation of oxygen vacancies near interface between the ferroelectric thin film and the bottom electrode caused by the progress of fatigue. In our switching model, relative switched charge is 0.74 nC before fatigue, but after the progress of fatigue it reduces to 0.15 nC with the generation of oxygen vacancies. It indicates that the generation of oxygen vacancies strongly suppresses polarization reversal. $C-V_G\;and\;I_D-V_G$ curves in our MFSFET device model exhibit the memory window of 2 V and show the accumulation, the depletion and the inversion regions in capacitance characteristic clearly. The difference of saturation drain current of the device before fatigue in shown by the dual threshold voltages in $I_D-V_G$ curve as 6nA/$cm^2$ and decreases as much as 50% after fatigue. Decrease of the difference of saturation drain currents by fatigue implies that the accumulation of oxygen vacancies with the fatigue should be avoided in the device application. Our simulation model is expected to play an important role in estimation of the behavior of MFSFET device with various ferroelectric thin films.

• Journal of the Korean Institute of Telematics and Electronics C
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• v.35C no.11
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• pp.57-62
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• 1998

In this paper, tunable transconductor shows good linearity over a wide input voltage range are proposed. The proposed transconductor employ operating in the nonsaturation(ie., linear) region to improve circuit simplicity and tunability and 6.8V$\_$p-p/ wide input range. Also the circuit employ source-coupled differential pair to provide true differential input and can achieve both positive and negative transconductance values. The proposed circuits are implemented using a 1.2 $\mu\textrm{m}$ single poly double metal n-well CMOS technology. The THD characteristic of proposed circuit is less than 1% for a differential input voltage of up to 6V$\^$p-p/ when supply bias condition is V$\_$DD/=-V$\_$ss/=5V, I$\_$B/=20, 40${\mu}$A, and frequency of input signal is 1KHz.

• BMB Reports
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• v.38 no.3
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• pp.350-353
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• 2005

Alanine at residue 73 (Ala-73) and aspartate at residue 9 (Asp-9) are characteristic to both Cw6 and Cw7 alleles of HLA-C gene and have been suggested as possible markers for psoriasis vulgaris (PsV). However, the results from various ethnic groups/populations are contradictory and inconclusive. In this study, an attempt has been made to examine the association between HLA-C (Ala-73 and Asp-9) and susceptibility to PsV among Saudi patients. Genomic DNA was extracted from 25 Saudi PsV patients and 75 control subjects. Polymerase chain reaction (PCR) was performed to amplify HLA-C sequences using earlier reported primers, C133P and C243PR. Sequence-specific primers were used to specifically detect nucleotide coding for Ala-73 and Asp-9 in all the subjects. The results showed significantly higher frequency of Asp-9 (84.0% versus 61.3%) in PsV patients as compared to controls (p < 0.05, 2-tailed Fisher's exact test). The frequencies of Ala-73 among PsV patients (92%) and controls (88%) did not differ significantly.

• Korean Journal of Fisheries and Aquatic Sciences
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• v.15 no.3
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• pp.211-218
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• 1982

The specific heat capacity and density of soybean oil and soy protein composing of the soybean curd were measured between $30^{\circ}C\;and\;-40^{\circ}C$. The thermal conductivity of soybean oil was measured to be 0.160 and 0.140, $W/m{\cdot}K$ at unfrozen and frozen states, respectively. The effective thermal conductivity of the soybean curd depended not only on its water content but also on its fat and protein contents.

• Journal of Korean Ophthalmic Optics Society
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• v.5 no.2
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• pp.193-199
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• 2000

The a-C : H films have been grown on the glass substrate by PECVD method, where plasma was generated with a 60 Hz line power source. The growth rate of films is found to be dependent of the partial pressure of $C_2H_2$. This growth rate is a little higher than that in which $CH_4$ instead of $C_2H_2$ is used. The transmittance is also much higher(95%). The optical energy gap of films is in the range of 1.4~1.8eV depending on the partial pressure of $C_2H_2$. However, this energy gap, which is 1.8eV, is found to be independent of the partial pressure of $C_2H_2$ for the thick films above $2000{\AA}$. The carbonization is checked from peak intensities of D ($sp^3$) and G($sp^2$) peaks in Roman spectra. The hydronization and C-H bonding status in films can also be determined from FTIR results. Both the bonding strength of C-H and the ratio of $sp^3$ to $sp^2$ in bonding are found to be slightly dependent of partial pressure of $C_2H_2$. Judging from above results, we can conclude that the best value for partial pressure of $C_2H_2$ in growing process of thick films is about 13.8%.

• KSBB Journal
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• v.17 no.3
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• pp.247-254
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• 2002

Two kinds of crude oil-degrading microorganisms from soil and one kind from sea were isolated and named strain Al32, strain F722 and strain OM1, respectively. These microorganism were identified Acinetobacter sp., Pseudomonas aeruginosa and Acinetobacter calcoaceticus, respectively. The optimum cultivation temperature of Acinetobacter sp. A132 and P. aeruginosa F722 was $35^{\circ}C$ and optimum growth pH was 8 and 9, respectively. The growth was the highest at 2.0% (w/v) substrate concentration when crude oil was only carbon source. The growth of A. calcoaceticus OM1 isolated from sea was the highest at 3.0% (w/v) of crude oil. In inspection of crude oil degradability, strain Al32 showed 5.49 g/L.day with Eleuthera (OMAN), 2.0% (w/v). P. aeruginosa F722 showed 1.19 g/L g/L.day with L-Zakum (AFRICA). In case of kerosene $nC_9\simnC_{20}$ and diesel $nC_9\simnC_{28}$, A. calcoaceticus OM1 was degraded 95% and 75%, respectively, for 7 days culture, and P. aeruginosa F722 was 80% after 10 days.

• Journal of IKEEE
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• v.20 no.2
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• pp.192-195
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• 2016

In this paper, we present a nanopower CMOS bandgap voltage reference working in sub-threshold region without resisters and bipolar junction transistors (BJT). Complimentary to absolute temperature (CTAT) voltage generator was realized by using two n-MOSFET pair with body bias circuit to make a sufficient amount of CTAT voltage. Proportional to absolute temperature (PTAT) voltage was generated from differential amplifier by using different aspect ratio of input MOSFET pair. The proposed circuits eliminate the use of resisters and BJTs for the operation in a sub-1V low supply voltage and for small die area. The circuits are implemented in 0.18um standard CMOS process. The simulation results show that the proposed sub-BGR generates a reference voltage of 290mV, obtaining temperature coefficient of 92 ppm/$^{\circ}C$ in -20 to $120^{\circ}C$ temperature range. The circuits consume 15.7nW at 0.63V supply.

• Bulletin of the Korean Chemical Society
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• v.25 no.11
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• pp.1645-1647
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• 2004

Potential energy surfaces for the reaction Al + $O_2{\to}$AlO + O have been calculated with the multireference configuration interaction (MRCI) method using molecular orbitals derived from the complete active space selfconsistent field (CASSCF) calculations. The end-on geometry is the most favourable for the reaction to take place. The small reaction barrier in the present calculation (0.11 eV) is probably an artefact related to the ionicneutral avoided crossing. The charge analysis implies that the title oxidation reaction occurs through a harpooning mechanism. Along the potential energy surface of the reaction, there are two stable intermediates of $AlO_2(C_{{\infty}v}$ and $C_{2v}$) at least 2.74 eV below the energy of reactants. The calculated enthalpy of the reaction (-0.07 eV) is in excellent agreement with the experimental value (-0.155 eV) in part due to the fortuitous cancellation of errors in AlO and $O_2$ calculations.

• Analytical Science and Technology
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• v.16 no.3
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• pp.206-211
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• 2003

The DC polarograms of some rare earth elements have been investigated in various pH solution and electrolytes. Samarium ion has two well-defined reduction waves at -1.75 V and -1.95 V in 0.1 M NaCl solution and those are a diffusion controlled in nature. Europium and ytterbium ions give also two step reduction waves at -0.75 V and -1.95 V for europium and -1.45 V and -2.00 V for ytterium in $(C_2H_5)_4NCl$ solution. On the other hand, lantanium and neodium ions show a single reduction wave at -1.75 V. The differences of half wave potentials between europium, ytterium and samarium ions make it possible to determine each ions in the mixed solution sponteniously. In case of europium ion, the stability constants for the complexs of $Eu^{3+}$-EDTA and $Eu^{3+}$-DTPA are evaluated.