• Research in Plant Disease
• /
• v.12 no.2
• /
• pp.91-98
• /
• 2006

A filtrate powder, designated as KNF2022, produced from culture broth of Acinetobacter sp. KTB3 was tested for their inhibitory effects on Pepper mild mottle virus (PMMoV) infection to Nicotiana glutinosa or N. tabacum cv. Xanthi nc. When 1/100 dilution with distilled water was treated to the plants and PMMoV was inoculated, the inhibition was estimated to be 94.3 and 95.6%, respectively. The same concentrations of KNF2022 inhibited infections of Pepper mottle virus (PepMoV) and Cucumber mosaic virus (CMV) on Chenopodium amaranticolor by 97.1 and 92.5%, respectively. Duration of inhibitory activity of the filtrate powder from Acinetobacter sp. culture broth against PMMoV infection on N. glutinosa was maintained for 2 days at 80% inhibition level, however, the inhibitory effect was diminished from 4 days after treatment to 50% levels. To evaluate inhibitory effects on systemic host plants of the antiviral agent, symptom developments of PMMoV, PepMoV and CMV on KNF2022-treated pepper plants were investigated. Delayed symptom developments until 10 days after inoculation (DAI) were observed for all the three viruses when the viruses were inoculated individually, and these delayed symptom development effects were maintained until 30 DAI in case of PepMoV. Moreover, PepMoV was not detected by RT-PCR and ELISA until 30 DAI. These delayed symptom development effects were diminished in all combinations of three virus co-inoculations due to synergism of three viruses on symptom developments. Inhibitory effect of KNF2022 was verified under electron microscopic examinations using purified virus preparations. Particles of PMMoV and PepMoV were observed on specimens from 5 min after KNF2022 treatment, and the particle sizes were reached in the range of 200-250 nm and 400-600 nm, respectively. Furthermore, the viral particles were destructed and particle sizes were reached in the range of 100-150 nm and 300-500 nm, respectively, on 60 min after treatments. Reduction of local lesion numbers on N. tabacum cv. Xanthi nc and C. amaranticolor were accompanied with reduction of virus particle sizes. In the case of CMV destructed particle numbers were also increased according to incubation period after KNF2022 treatment and local lesions on C. amaranticolor were reduced.

• Journal of the Korean Home Economics Association
• /
• v.24 no.2
• /
• pp.51-62
• /
• 1986

This study was designed to observe the effects of nutritional supplementation of general Korean diet on protein metabolism in growing rats. Seventy weanling Sprague-Dawely male rats weighing 76.8$\pm$1.45g were blocked into ten groups and fed ten different experimental diets for eight weeks. The rats in cereal-vegetable group were fed ad libitum for all the experimental period and those in other experimental groups were pairfed following the feed intake of rats in C-V gp. Control group was given 72% cornstarch-29% casein diet : C-V gp was fed cerealvegetable diet composed of rice, barley, soybean and Chinese cabbage : the other eight groups were fed C-V diets supplemented with casein, vitamin B\sub 2\ calcium, vitamin A, vitamin B\sub 2\ and vitamin A, vitamin A and calcium, vitamin B\sub 2\ and calcium, vitamin A and vitamin B\sub 2\ and calcium, respectively, on the basis of each nutrients content of standard diet.

• Journal of the Korea Safety Management & Science
• /
• v.4 no.2
• /
• pp.199-207
• /
• 2002

The polycrystalline CdS of large scale were grown by chemical pyrolysis deposition for $Cu_2$S/CdS heterojunction solar cells. For high quality CdS polycrystalline thin films, the chemical solution was deposited on indium tin oxide(ITO) glasses at the temperature of 50$0^{\circ}C$ for 15 second and annealed at 35$0^{\circ}C$ for 20 minute or 50$0^{\circ}C$ for 30 second. To fabricate high efficiency solar cells, optical and electrical properties, morphology by SEM and x-ray diffraction on polycrystalline CdS thin films were investigated. From the I-V characteristics of $Cu_2$S/CdS heterojunction, the open circuit voltage, $V_{oc}$ was 0.7 V and the short circuit current, $I_{sc}$ was 4.2 mA. We found that the fill factor(FF) was 0.5 and the efficiency was 2.5%.

• Journal of the Korean Ceramic Society
• /
• v.56 no.1
• /
• pp.84-90
• /
• 2019

The varistor properties and stability against dc-accelerated stress of $V_2O_5-Mn_3O_4-Co_3O_4-Dy_2O_3-Nb_2O_5-Bi_2O_3$ (VMCDNB)-doped zinc oxide ceramics sintered at $850-925^{\circ}C$ were investigated. Increasing the sintering temperature increased the average grain size from 4.6 to 8.7 mm and decreased the density of the sintered pellet density from 5.54 to $5.42g/cm^3$. The breakdown field decreased from 5919 to 1465 V/cm because of the increase in the average grain size. Zinc oxide ceramics sintered at $875^{\circ}C$ showed the highest nonlinear coefficient (43.6) and the highest potential barrier height (0.96 eV). Zinc oxide ceramics sintered at $850^{\circ}C$ showed the highest stability: the variation rate of the breakdown field was -2.0% and the variation rate of the nonlinear coefficient was -23.3%, after application of the specified stress (applied voltage/temperature/time).

• Proceedings of the Korean Institute of Surface Engineering Conference
• /
• 2003.10a
• /
• pp.119-119
• /
• 2003

Plasma polymerized organic thin films were deposited on Si(100) glass and Copper substrates at 25 ∼ 100 $^{\circ}C$ using cyclohexane and ethylcyclohexane precursors by PECVD method. In order to compare physical and electrochemical properties of the as-grown thin films, the effects of the RF plasma power in the range of 20∼50 W and deposition temperature on both corrosion protection efficiency and physical properties were studied. We found that the corrosion protection efficiency (P$\_$k/), which is one of the important factors for corrosion protection in the interlayer dielectrics of microelectronic devices application, was increased with increasing RF power. The highest P$\_$k/ value of plasma polymerized ethylcyclohexane film (92.1% at 50 W) was higher than that of the plasma polymerized cyclohexane film (85.26% at 50 W), indicating inhibition of oxygen reduction. Impedance analyzer was utilized for the determination of I-V curve for leakage current density and C-V for dielectric constants. To obtain C-V curve, we used a MIM structure of metal(Al)-insulator(plasma polymerized thin film)-metal(Pt) structure. Al as the electrode was evaporated on the ethylcyclohexane films that grew on Pt coated silicon substrates, and the dielectric constants of the as-grown films were then calculated from C-V data measured at 1㎒. From the electrical property measurements such as I-V ana C-V characteristics, the minimum dielectric constant and the best leakage current of ethylcyclohexane thin films were obtained to be about 3.11 and 5 ${\times}$ 10$\^$-12/ A/$\textrm{cm}^2$ and cyclohexane thin films were obtained to be about 2.3 and 8 ${\times}$ 10$\^$-12/ A/$\textrm{cm}^2$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.07b
• /
• pp.561-565
• /
• 2002

The effects of sintering additives such as $Bi_2O_3$ and $V_2O_5$ on the microwave dielectric and sintering properties of (Zn, Mg)$TiO_3$ system were investigated. Highly dense samples were obtained for $(Zn_{0.8}Mg_{0.2})TiO_3$ at the sintering temperature range of $870{\sim}900^{\circ}C$ with $Bi_2O_3$ and $V_2O_5$ additions of <1wt.%, respectively. The microwave dielectric properties of $(Zn_{0.8}Mg_{0.2})TiO_3$ with 0.45 wt.% $Bi_2O_3$ and 0.55 wt.% $V_2O_5$ sintered at $900^{\circ}C$ were as follows: $Q{\times}f_o$=56,800 GHz, ${\varepsilon}_r$=22, and ${\tau}_f=-53ppm/^{\circ}C$. In order to improve temperature coefficient of resonant frequency, $TiO_2$ was added to the above system. The optimum amount of $TiO_2$ was 15 mol.% when sintered at $870^{\circ}C$, at which we could obtain following results: $Q{\times}f_o$ = 32,800 GHz, ${\varepsilon}_r$ = 26, and $\tau_f=0ppm/^{\circ}C$.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.16 no.7
• /
• pp.604-610
• /
• 2003

The effects of sintering additives such as B $i_2$ $O_3$ and $V_2$ $O_{5}$ on the microwave dielectric and sintering properties of (Z $n_1$$_{-xM}$ $g_{x}$)Ti $O_3$ system were investigated. Highly dense samples were obtained for (Z $n_{0.8}$M $g_{0.2}$)Ti $O_3$ at the sintering temperature range of 870~90$0^{\circ}C$ with B $i_2$ $O_3$ and $V_2$ $O_{5}$ additions of 〈1 wt.%, respectively. The microwave dielectric properties of (Z $n_{0.8}$M $g_{0.2}$)Ti $O_3$ with 0.45 wt.%B $i_2$ $O_3$ and 0.55 wt.% $V_2$ $O_{5}$ sintered at 90$0^{\circ}C$ were as follows : Q$\times$ $f_{o}$ = 50,800 GHz, $\varepsilon$$_{r}$ = 22, and $\tau$$_{f}$ = -53 ppm/$^{\circ}C$. In order to improve temperature coefficient of resonant frequency, Ti $O_2$ was added to the above system. The optimum amount of Ti $O_2$ was 15 moi.% when sintered at 87$0^{\circ}C$, at which we could obtain following results: Q$\times$ $f_{o}$ = 32,800 GHz, $\varepsilon$$_{r}$ = 26, and$\tau$$_{f}$ = 0 ppm/$^{\circ}C$.EX>.EX>.EX>.EX>.EX>.EX>.EX>.

• Korean Journal of Materials Research
• /
• v.10 no.6
• /
• pp.409-414
• /
• 2000

Three different white cast irons alloyed with Cr, V, Mo and W were prepared in order to study their transformation behavior of matrix structures in heat-treated conditions. The specimens were produced using a 15kg-capacity high frequency induction furnace. Melts were super-heated to $1600^{\circ}C$, and poured at $1550^{\circ}C$ into Y-block pepset molds. Three combinations of the alloying elements were selected so as to obtain the different types of carbides and matrix structures : 3%C-10%Cr-5%Mo-5%W(alloy No. 1), 3%C-10%V-5%Mo-5%W(alloy No. 2) and 3%C-17%Cr-3%V(alloy No. 3). The heat-treatments were conducted as follows: frist of all, as-cast specimens were homogenized at $950^{\circ}C$ for 5h under the vacuum atmosphere. Then, they were austenitized at $1050^{\circ}C$ for 2h and followed by air-hardening in air. The air-hardened specimens were tempered at $300^{\circ}C$ for 3h. The observation of morphology of the matrix structures was carried out in the states of as-cast(AS), air-hardened(AHF) and tempered(AHFT). The matrix structures of each alloy were almost fully pearlitic in the as-cast state but it was transformed to martensite, tempered martensite and retained austenite by the heat-treatments such as air-hardening and tempering.

• Journal of the Korean Ceramic Society
• /
• v.11 no.3
• /
• pp.19-26
• /
• 1974

Mechanical properties of the system PbO-B2O3-V2O5 low melting glass during crystallization by heat-treatment were investigated. Wettability of the system PbO-B2O3-V2O5 was excellent and appropriate for commercial sealing as a low melting solder glass. Crystals, during heat-treated at 30$0^{\circ}C$ of the system PbO-B2O3-V2O5 were $\beta$-4PbO.B2O3, 5PbO.4B2O3, and Pb2V2O7 mainly. The percent of crystallinity was 82$\pm$5%. Mechanical properties of the system PbO-B2O3-V2O5 were influenced not only by the differences of density and coefficient of thermal expansion and the stress induced from the difference in the density and coefficient of thermal expansion between glass phase and crystals but also crystallization conditions.

• Journal of the Korean Society for Nondestructive Testing
• /
• v.25 no.2
• /
• pp.117-126
• /
• 2005

A stoichiometric mixture of evaporating materials for $AgGaS_2$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $AgGaS_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $590^{\circ}C\;and\;440^{\circ}C$, respectively The temperature dependence of the energy band gap of the $AgGaS_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=2.7284 eV-(8.695{\times}10^{-4}eV/K)T^2/T(T+332K)$. After the as-grown $AgGaS_2$, single crystal thin films was annealed in Ag-, S-, and Ga-atmospheres, the origin of point defects of $AgGaS_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10K. The native defects of $V_{Ag},\;V_s,\;Ag_{int},\;and\;S_{int}$, obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Ag-atmosphere converted $AgGaS_2$ single crystal thin films to an optical n-type. Also, we confirmed that Ga in $AgGaS_2$ crystal thin films did not form the native defects because Ga in $AgGaS_2$ single crystal thin films existed in the form of stable bonds.