• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.4
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• pp.532-538
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• 1998

Emerald ($3BeO{\cdot}Al_2O_3{\cdot}6SiO_2:Cr^{3+}$) single crystal was grown by temperature gradient reflux method with using Korean natural beryl. The flux of lithium-molibudenium-vanadium oxide system was made by means of mixing the 2 sort of flux which were differently melted $Mo_3-Li_2O$ and $V_2O_5-Li_2O$ each other. The optimum composition of flux was 3 mole ratio of molibudenium. vanadium oxides to lithium oxide ($(MoO_3+V_2O_5)/Li_2O$), flux additives were substituted more less then 0.2 mole% of $K_2O$ or $Na_2O$ to the $Li_2O$ amount. The melting concentration of mixing beryl material was 3~10% content to the flux, that of $Cr_2O_3$ color dopant was 1% to the beryl amount. In the crystal growing apparatus with temperature gradient in the 3 zone furnace which was separated into the block of melt, growth and return, the solution have got to circulate continuously between $1100^{\circ}C$ and $1000^{\circ}C$ in steady state. When thermal fluctuation was treated to during 2 hrs once on a day at 950~$1000^{\circ}C$ in growth zone, the supersaturation solution was maintained, controled and emerald single crystal can be grown large crystal which was prevented from the nucleation of microcrystallite. The preferencial growth direction of hexagonal columnar emerald single crystal was the c(0001) plane of botton side and vertical to the m(1010) plane of post side.

• BMB Reports
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• v.49 no.11
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• pp.612-616
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• 2016

CD44 pre-mRNA includes 20 exons, of which exons 1-5 ($C_1-C_5$) and exons 16-20 ($C_6-C_{10}$) are constant exons, whereas exons 6-15 ($V_1-V_{10}$) are variant exons. $V_6$-exon-containing isoforms have been known to be implicated in tumor cell invasion and metastasis. In the present study, we performed a SR protein screen for CD44 $V_6$ splicing using overexpression and lentivirus-mediated shRNA treatment. Using a CD44 $V_6$ minigene, we demonstrate that increased SRSF3 and SRSF4 expression do not affect $V_6$ splicing, but increased expression of SRSF1, SRSF6 and SRSF9 significantly inhibit $V_6$ splicing. In addition, using a constitutive exon-specific primer set, we could not detect alterations of CD44 splicing after SR protein-targeting shRNA treatment. However, using a $V_6$ specific primer, we identified that reduced SRSF2 expression significantly reduced the $V_6$ isoform, but increased $V_{6-10}$ and $V_{6,8-10}$ isoforms. Our results indicate that SR proteins are important regulatory proteins for CD44 $V_6$ splicing.

• Journal of the Microelectronics and Packaging Society
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• v.18 no.4
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• pp.33-38
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• 2011

The p-type $(Bi_{0.2}Sb_{0.8})_2Te_3$ powers were fabricated by mechanical alloying and hot-pressed at temperatures of $350{\sim}550^{\circ}C$. Themoelectric properties of the hot-pressed $(Bi_{0.2}Sb_{0.8})_2Te_3$ were characterized as a function of the hot-pressing temperature. With increasing the hot-pressing temperature from $350^{\circ}C$ to $550^{\circ}C$, the Seebeck coefficient and the electrical resistivity decreased from 237 ${\mu}V/K$ to 210 ${\mu}V/K$ and 2.25 $m{\Omega}-cm$ to 1.34 $m{\Omega}-cm$, respectively. The power factor of the hot-pressed $(Bi_{0.2}Sb_{0.8})_2Te_3$ became larger from $24.95{\times}10^{-4}W/m-K^2$ to $32.85{\times}10^{-4}W/m-K^2$ with increasing the hot-pressing temperature from $350^{\circ}C$ to $550^{\circ}C$. Among the specimens hot-pressed at $350{\sim}550^{\circ}C$, the $(Bi_{0.2}Sb_{0.8})_2Te_3$ hot-pressed at $500^{\circ}C$ exhibited the maximum dimensionless figure-of-merit of 1.09 at $25^{\circ}C$ and 1.2 at $75^{\circ}C$.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.163-163
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• 2010

중적외선 영역 ($3{\sim}5\;{\mu}m$)은 공기 중에 존재하는 이산화탄소나 수증기에 의해 흡수가 일어나지 않기 때문에 군사적으로 중요한 파장 영역이며, 야간에 적을 탐지하는데 응용되고 있다. InSb는 77 K에서 중적외선 파장 흡수에 적합한 밴드갭 에너지 (0.228 eV)를 갖고 있으며, 다른 화합물 반도체와 달리 전하 수송자 이동도 (전자: $10^6\;cm^2/Vs$, 정공: $10^4\;cm^2/Vs$)가 매우 빠르기 때문에 적외선 화상 감지기 재료로 매우 적합하다. 또한 현재 중적외선 영역대에서 널리 사용되는 HgCdTe (MCT)와 대등한 소자 성능을 나타냄과 동시에 낮은 기판 가격, 소자의 제작 용이성 때문에 MCT를 대체할 물질로 주목 받고 있다. 하지만, 기판과 절연막의 계면에 존재하는 결함 때문에 에너지 밴드갭 내에 에너지 준위를 형성하여 높은 누설 전류 특성을 보인다. 따라서 InSb 적외선 소자의 구현을 위하여 고품질의 절연막의 연구가 필수적이라고 할 수 있겠다. 절연막의 특성을 알아보기 위해, n형 InSb 기판에 플라즈마 화학 기상 증착법 (PECVD)을 이용하여 $SiO_2$, $Si_3N_4$를 증착하였으며, 증착 온도를 $120^{\circ}C$에서 $240^{\circ}C$까지 $40^{\circ}C$ 간격으로 변화하여 증착온도가 미치는 영향에 대하여 알아보았다. 절연막과 기판의 계면 특성을 분석하기 위하여 77 K에서 커패시턴스-전압 (C-V) 분석을 하였으며, 계면 트랩 밀도는 Terman method를 이용하여 계산하였다 [1]. $Si_3N_4$를 증착하였을 경우, $120{\sim}240^{\circ}C$의 증착 온도에서 $2.4{\sim}4.9{\times}10^{12}\;cm^{-2}eV^{-1}$의 계면 트랩 밀도를 가졌으며, 증착 온도가 증가할수록 계면 트랩 밀도가 증가하는 경향을 보였다. 또한 모든 증착 온도에서 flat band voltage가 음의 전압으로 이동하였다. $SiO_2$의 경우 $120{\sim}200^{\circ}C$의 증착온도에서 $7.1{\sim}7.3{\times}10^{11}\;cm^{-2}eV^{-1}$의 계면 트랩 밀도 값을 보였으나, $240^{\circ}C$ 이상에서 계면 트랩밀도가 $12{\times}10^{11}\;cm^{-2}eV^{-1}$로 크게 증가하였다. $SiO_2$ 절연막을 사용함으로써, $Si_3N_4$ 대비 약 25% 정도 낮은 계면 트랩 밀도를 얻을 수 있었으며, 모든 증착 온도에서 양의 전압으로 flat band voltage가 이동하였다. 두 절연막에 대한 계면 트랩의 원인을 분석하기 위하여 XPS 측정을 진행하였으며, 깊이에 따른 조성 분석을 하였다. 본 실험에서 최적화된 $SiO_2$ 절연막을 이용하여 InSb 소자의 pn 접합 연구를 진행하였다. Be+ 이온 주입을 진행하고, 급속열처리(RTA) 공정을 통하여 p층을 형성하였다. -0.1 V에서 16 nA의 누설 전류 값을 보였으며, $2.6{\times}10^3\;{\Omega}\;cm^2$의 RoA (zero bias resistance area)를 얻을 수 있었다.

• Journal of applied mathematics & informatics
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• v.19 no.1_2
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• pp.127-133
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• 2005

An f-coloring of a graph G = (V, E) is a coloring of edge set E such that each color appears at each vertex v $\in$ V at most f(v) times. The minimum number of colors needed to f-color G is called the f-chromatic index $\chi'_f(G)$ of G. Any graph G has f-chromatic index equal to ${\Delta}_f(G)\;or\;{\Delta}_f(G)+1,\;where\;{\Delta}_f(G)\;=\;max\{{\lceil}\frac{d(v)}{f(v)}{\rceil}\}$. If $\chi'_f(G)$= ${\Delta}$f(G), then G is of $C_f$ 1 ; otherwise G is of $C_f$ 2. In this paper, the classification problem of complete graphs on f-coloring is solved completely.

• Macromolecular Research
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• v.10 no.5
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• pp.286-290
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• 2002

The FT-Raman spectra of trans-polyacetylene films doped lightly with iodine were obtained with the 1320-nm laser line. The observed Raman bands are attributed to positively charged domains created by acceptor doping. The observed Raman wavenumbers of the V$_2$, (CC stretch), V$_3$, and V$_4$ bands (mixed of CC stretch and CH in-plan bending) of iodine-doped form are slightly higher than those of the corresponding bands of pristine trans-polyacetylene, whereas the contrary is the case for V$_1$, and (C=C stretch) of iodine-doped form. In particular, these upshifts of the V$_2$ and V$_3$ bands are distinguished from the downshifts of these bands in donor doping. The origin of doping induced Raman bands is discussed in terms of solitons and polarons.

• Bulletin of the Korean Mathematical Society
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• v.50 no.5
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• pp.1693-1710
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• 2013

In this paper, we consider the biharmonic elliptic systems of the form $$\{{\Delta}^2u=F_u(u,v)+{\lambda}{\mid}u{\mid}^{q-2}u,\;x{\in}{\Omega},\\{\Delta}^2v=F_v(u,v)+{\delta}{\mid}v{\mid}^{q-2}v,\;x{\in}{\Omega},\\u=\frac{{\partial}u}{{\partial}n}=0,\; v=\frac{{\partial}v}{{\partial}n}=0,\;x{\in}{\partial}{\Omega},$$, where ${\Omega}{\subset}\mathbb{R}^N$ is a bounded domain with smooth boundary ${\partial}{\Omega}$, ${\Delta}^2$ is the biharmonic operator, $N{\geq}5$, $2{\leq}q$ < $2^*$, $2^*=\frac{2N}{N-4}$ denotes the critical Sobolev exponent, $F{\in}C^1(\mathbb{R}^2,\mathbb{R}^+)$ is homogeneous function of degree $2^*$. By using the variational methods and the Ljusternik-Schnirelmann theory, we obtain multiplicity result of nontrivial solutions under certain hypotheses on ${\lambda}$ and ${\delta}$.

• Korean Journal of Food Science and Technology
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• v.2 no.2
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• pp.61-67
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• 1970

The growth characteristics of Candida tropicalis KIST 359, isolated from soil samples collected at an oil depot in Korea, have been studied by cultivating batches under varying conditions. The conclusions of the study were: 1. The yeast easily assimilates hydrocarbons in a range of $C_{14}-C_{17}$, and the optimum cultivation temperature and pH are $30^{\circ}C$ and 5.5, respectively. 2. Using this strain of micro-organism, gas oil gives a higher cell yield than kerosine and with gas oil except urea all other nitrogen sources $(NH_4NO_3,\;NH_4Cl,\;(NH_4)_2SO_4\;and\;(NH_4)_2HPO_4)$ similarly support a satisfactory growth of the yeast. 3. The highest yield is obtained with a gas oil level of 10%(v/v), and concentrations of nitrogen source and $MgSO_4{\cdot}7H_2O$ of 0.5 and 0.05%(w/v), respectively. 4. The protein content of dried yeast cells is 59.8%. Its amino acid composition can be compared well with that of FAO provisional patterns, but with a low methionine and a high lysine content.

• Proceedings of the KIEE Conference
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• 2009.07a
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• pp.1322_1323
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• 2009

The $V_{1.85}W_{0.15}O_5$ thin films deposited on Pt/Ti/$SiO_2$/Si substrates by RF sputtering method exhibited fairly good TCR and dielectric properties. It was found that film crystallinity, dielectric properties, and TCR properties were strongly dependent upon the annealing temperature. The dielectric constants of the $V_{1.85}W_{0.15}O_5$ thin films annealed at $400^{\circ}C$ were 38.11, with a dielectric loss of 1%, respectively. Also, the TCR values of the $V_{1.85}W_{0.15}O_5$ thin films annealed at $400^{\circ}C$ were about -3.45%/K.

• Proceedings of the KIEE Conference
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• 2008.10a
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• pp.117-118
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• 2008

The $V_{1.85}W_{0.15}O_5$ thin films deposited on Pt/Ti/$SiO_2$/Si substrates by RF sputtering method exhibited fairly good TCR and dielectric properties. It was found that film crystallinity, dielectric properties, and TCR properties were strongly dependent upon the annealing temperature. The dielectric constants of the $V_{1.85}W_{0.15}O_5$ thin films annealed at $400^{\circ}C$ were 38.11, with a dielectric loss of 1%, respectively. Also, the TCR values of the $V_{1.85}W_{0.15}O_5$ thin films annealed at $400^{\circ}C$ were about -3.45%/K.