• Title/Summary/Keyword: V2C

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Design and Optimization of 4.5 kV 4H-SiC MOSFET with Current Spreading Layer (Current Spreading Layer를 도입한 4.5 kV 4H-SiC MOSFET의 설계 및 최적화)

  • Young-Hun, Cho;Hyung-Jin, Lee;Hee-Jae, Lee;Geon-Hee, Lee;Sang-Mo, Koo
    • Journal of IKEEE
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    • v.26 no.4
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    • pp.728-735
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    • 2022
  • In this work, we investigated a high-voltage (~4.5 kV) 4H-SiC power DMOSFET with modifications of current spreading layer (CSL), which was introduced below the p-well region for low on-resistance. These include the following: 1) a thickness of CSL (TCSL) from 0 um to 0.9 um; 2) a doping concentration of CSL (NCSL) from 1×1016 cm-3 to 5×1016 cm-3. The design is optimized using TCAD 2D-simulation, and we found that CSL helps to reduce specific on-resistance but also breakdown voltage. The resulting structures exhibit a specific on-resistance (Ron,sp) of 59.61 mΩ·cm2, a breakdown voltage (VB) of 5 kV, and a Baliga's Figure of Merit (BFOM) of 0.43 GW/cm2.

Ferromagnetism of thin films deposited from paramagnetic stainless steel targets by Facing Targets Sputtering

  • Matsushita, N.;Ono, N.;Naoe, M.
    • Proceedings of the Korean Magnestics Society Conference
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    • 1991.05a
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    • pp.73-74
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    • 1991
  • The films with ferromagnetic fine particles dispersed in nonmagnetic matrix, such as $Fe-Al_2O_3$ and Fe-Cu have been studied for use of magnetic recording medium, optically device and sensor. Their magnetic properties depend strongly on structural parameter such as size and volume fraction of ferromagnetic particles. Fe-Cr-Ni alloy sputtered films also have microstructure with ferromagnetic -- b.c.c phase and nonmagnetic f.c.c phase grains. Magnetic properties of these films depend strongly on such a unique structure. These are depend on the ratio in volume of ferromagnetic particles to nonmagnetic ones $V_F/V_N$, the saturation magnetization Ms increased with increase of $V_F/V_N$. The coercivity Hc of the as-deposited films took maximum value of about 200 Oe at adequate $V_F/V_N$ and then Ms and Squareness S were 500 emu/cc and 0.5, respectively.(omitted)

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Purification and Characterization of Collagenase Produced by Staphylococcus aureus JJ-11 Isolated from the Human Skin (피부에서 분리한 Staphylococcus aureus JJ-11이 생산하는 collagenase의 정제 및 특성)

  • Lee Jin-Kyoung;Kim Hae-Nam;Kang Ho-Young;Jun Hong-Ki
    • Journal of Life Science
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    • v.16 no.2 s.75
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    • pp.245-252
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    • 2006
  • A bacterial strain, identified as Staphylococcus aureus JJ-11, producing collagenase was isolated out of 40 persons having skin troubles. S. aureus JJ-11 produced collagenase optimally in the media containing 1.5%(w/v) gelatin, 1%(w/v) yeast extract, 0.4%(w/v) $K_2HPO_4$, 0.005%(w/v) $NiSO_4{\cdot}6H_2O$ at $37^{\circ}C$ for 18 hrs. The collagenase produced by Staphylococcus aureus JJ-11 was purified at 6.66-folds purity through application of chromatography with Amberlite IRA-900 and Sephacryl S-300 HR columns. The molecular weight of the partially purified enzyme was estimated to be 62 kDa by SDS-PAGE. The protein exhibited optimum enzymatic activity at pH 7.0, and showed a stable activity at pH 4-8. The optimum temperature for collagenase was at $37^{\circ}C$, and activity was maintained upto $40^{\circ}C$. The enzyme activity was slightly elevated in the presence of divalents such as, $Fe^{2+},\;Co^{2+}\;and\;Ba^{2+}$ However, the activity was inhibited in the presence of $Sr^{2+}\;or\;Hg^{2+}$. The inhibition of activity by O-phenanthroline and EDTA suggested that the enzyme may contain metal which is required for activity. The enzyme showed the highest activity when insoluble collagen (type I) was, used as a substrate.

The Potential Barrier Heights and the Carrier Densities of ZnO Varistors with Various Compositions

  • Cho, Sung-Gurl;Kwak, Min-Hwan;Lee, Sang-Ki;Kim, Hyung-Sik
    • The Korean Journal of Ceramics
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    • v.4 no.1
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    • pp.37-42
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    • 1998
  • The barrier heights and carrier densities of ZnO varistors with various compositions were estimated using C-V, J-V and $\rho$-T relations. The barrier heights obtained from C-V and J-V plots were 0.73~5.98 eV and 0.25~2.70 eV, respectively. The carrier densities estimated from C-V plots were ~$10^{18}cm^{-3}$. Acceptable values of the barrier heights and the carrier densities were obtained from $\rho$-1/T curves and the capacitances at zero bias; 0.6~0.8 eV for the barrier heights and ~$10^{17}cm^{-3}$ for carrier densities. Addition of cobalt increased the barrier height and the carrier density, while chromium slightly lowered both of them.

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The Effect of Neutron Radiation on the Electrical Characteristics of SiC Schottky Diodes (중성자 조사에 따른 SiC Schottky Diode의 전기적 특성 변화)

  • Kim, Sung-Su;Kang, Min-Seok;Cho, Man-Soon;Koo, Sang-Mo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.27 no.4
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    • pp.199-202
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    • 2014
  • The effect of neutron irradiation on the properties of SiC Schottky Diode has been investigated. SiC Schottky diodes were irradiated under neutron fluences and compared to the reference samples to study the radiation-induced changes in device properties. The condition of neutron irradiation was $3.1{\times}10^{10}$ $n/cm^2$. The current density after irradiation decreased from 12.7 to 0.75 $A/cm^2$. Also, a slight positive shift (${\Delta}V_{th}$= 0.15 V) in threshold voltage from 0.53 to 0.68 V and a positive change (${\Delta}{\Phi}_B$= 0.16 eV) of barrier height from 0.89 to 1.05 eV have been observed by the neutron irradiation, which is attributed to charge damage in the interface between the metal and the SiC layer.

A Study on the Water Absorption Velocity of Sized Fabrics (푸새직물의 흡수속도에 관한 일연구)

  • 오화자
    • Journal of the Korean Home Economics Association
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    • v.25 no.2
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    • pp.31-38
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    • 1987
  • This paper aims to examine the velocity of water absorption of cotton, hemp, and T/C fabrics sized by rice, wheat, potato, corn flour and pp.V.A.. Experimental variables such as the concentration of sizing agents, the moisture regain of unsized fabrics and the ironing temperature showed the following results. 1. When the fabrics were sized, the velocity of water absorption increased according to the order of corn, rice, potato, wheat flour and pp.V.A. for cotton fabrics, of corn, potato, rice, wheat flour and pp.V.A. for hemp fabrics, and of corn, wheat, rice, potato flour and pp.V.A. for T/C fabrics; corn flour showed the highest velocity of water absorption and pp.V.A. did the lowest among all the others mentioned above. 2. The higher fabric density, the higher velocity of water absorption. The finer the count of fabric yarn, the higher velocity of water absorption. 3. The material of sized fabrics most affected the velocity of water absorption than other factors of those. 4. To a certain extent, the higher the concentration of sizing agent, the higher the velocity of water absorption. 5. The fabrics with moisture regain of 20% before sizing showed the highest velocity of water absorption. 6. The ironing temperature after sizing fabrics mentioned below showed the highest velocity of water absorption; 180$^{\circ}C$ for cotton, 200$^{\circ}C$ for hemp, and 160$^{\circ}C$ for T/C fabrics.

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Dielectric and electric properties of sol-gel derived PZT thin Films (솔-젤법으로 제조한 PZT박막의 유전 및 전기적 특성)

  • Hong, Kwon;Kim, Byong-Ho
    • Electrical & Electronic Materials
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    • v.9 no.3
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    • pp.251-258
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    • 1996
  • Sol-Gel derived ferroelectric Pb(Z $r_{0.52}$ $Ti_{0.48}$) $O_{3}$ thin films have been fabricated on Pt/Ti/ $SiO_{2}$/Si substrate. Two kinds of fast annealing methods, F-I (six times of intermediate and final annealing) and F-II(one final annealing after six times of intermediate annealing) were used for preparation of multi-coated PZT thin films. As the annealing temperature was increased, high capacitance could be obtained, for instance, 2700.angs.-thick PZT thin film annealed at 680.deg. C had a capacitance value of approximately 20nF at 1kHz. In addition, it is found that the dielectric constant is a function of the perovskite phase fraction. In case of F-I method, PZT thin film had a remanent polarization(Pr) of 8-15.mu.C/c $m^{2}$ and a coercive field( $E_{c}$) of 35-44kV/cm according to annealing temperature, whereas PZT film fabricated by F-II method had as high as 24-25.mu.C/c $m^{2}$ and 48-59kV/cm, respectively. As a result of measuring Curie temperature, PZT thin film had a range of 460-480.deg. C by F-I method and more or less higher range of 525-530.deg. C by F-II method, which implied that different microstructures could cause the different Curie temperature. Through I-V measurement, leakage current of PZT thin film fabricated by F-I and F-II methods was 64nA/c $m^{2}$ and 2.2.mu.A/c $m^{2}$ in the electric field of 100kV/cm, respectively.y.y.y.

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Analysis of Output Constancy Checks Using Process Control Techniques in Linear Accelerators (선형가속기의 출력 특성에 대한 공정능력과 공정가능성을 이용한 통계적 분석)

  • Oh, Se An;Yea, Ji Woon;Kim, Sang Won;Lee, Rena;Kim, Sung Kyu
    • Progress in Medical Physics
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    • v.25 no.3
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    • pp.185-192
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    • 2014
  • The purpose of this study is to evaluate the results for the quality assurance through a statistical analysis on the output characteristics of linear accelerators belonging to Yeungnam University Medical Center by using the Shewhart-type chart, Exponentially weighted moving average chart (EWMA) chart, and process capability indices $C_p$ and $C_{pk}$. To achieve this, we used the output values measured using respective treatment devices (21EX, 21EX-S, and Novalis Tx) by medical physicists every month from September, 2012 to April, 2014. The output characteristics of treatment devices followed the IAEA TRS-398 guidelines, and the measurements included photon beams of 6 MV, 10 MV, and 15 MV and electron beams of 4 MeV, 6 MeV, 9 MeV, 12 MeV, 16MeV, and 20 MeV. The statistical analysis was done for the output characteristics measured, and was corrected every month. The width of control limit of weighting factors and measurement values were calculated as ${\lambda}=0.10$ and L=2.703, respectively; and the process capability indices $C_p$ and $C_{pk}$ were greater than or equal to 1 for all energies of the linear accelerators (21EX, 21EX-S, and Novalis Tx). Measured values of output doses with drastic and minor changes were found through the Shewhart-type chart and EWMA chart, respectively. The process capability indices $C_p$ and $C_{pk}$ of the treatment devices in our institution were, respectively, 2.384 and 2.136 for 21EX, 1.917 and 1.682 for 21EX-S, and 2.895 and 2.473 for Novalis Tx, proving that Novalis Tx has the most stable and accurate output characteristics.

A Study on the Time Delay Characteristics of Traffic Signal Phase and Timing Information Providing System (신호현시 정보 제공 시스템의 시간 지연특성 연구)

  • Bae, Jeong Kyu;Seo, Kyung Duk;Seo, Woo Chang;Seo, Dae Wha
    • Journal of Auto-vehicle Safety Association
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    • v.14 no.3
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    • pp.48-59
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    • 2022
  • A V2X system can be a candidate as a means to increase the stability of autonomous vehicles. In particular, in order to implement a Level 4 or higher autonomous driving system, the application of the V2X system is essential. Wireless communication technologies applicable to the V2X system include WAVE and C-V2X. Currently, the V2X service most used by autonomous driving systems is a service that provides signal phase and timing information and since real-time characteristic is a very important, verification of this service must be done. In this paper, we measured the time delay characteristics for providing signal phase and timing information using WAVE and LTE communication, and proposed a TOD-based signal phase and timing information generation method without using V2X communication system. To analyze the time delay characteristics, RTT (Round Trip Time) was measured as a result of the measurement. Average RTT using WAVE communication was 5.84ms and was 104.15ms with LTE communication. As a result of measuring the error between the signal phase and timing information generated based on TOD and the actual traffic light state, it was measured to be -0.284~3.784sec.

Synthesis and Molecular Structures of $2-SC_4H_3CH=NN(H)C_6H_5 and (GaMe_2)_2(2-SC_4H_3CH=NNC_6H_5)_2$ ($2-SC_4H_3CH=NN(H)C_6H_5$$(GaMe_2)_2(2-SSC_4H_3CH=NNC_6H_5)_2$의 합성과 분자 구조)

  • 박권일;김용기;조성일
    • Korean Journal of Crystallography
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    • v.11 no.1
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    • pp.46-51
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    • 2000
  • The molecular structures of 2-SC₄H₃CH=NN(H)C/sub 6/H/sub 5/(C/sub 11/H/sub 10/N₂S) and (GaMe₂)₂(2-SC₄H₃CH=NNC/sub 6/H/sub 5/)₂(C/sub 26/H/sub 30/Ga₂N₄S₂) have been determined by X-ray diffraction. Crystallographic data for 2-SC₄H₃CH=NN(H)C/sub 6/H/sub 5/:orthorhombic space group P2₁2₁2₁, a=6.108(1)Å, b=7.593(1)Å, c=22.356(2)Å, V=1037.1(3)ų, Z=4, R=0.0613. Crystallographic data for (GaMe₂)₂(2-SC₄H₃CH=NNC/sub 6/H/sub 5/)₂:monoclinic space group P2₁/n, a=15.996(2) Å, c=9.879(3)Å, β=100.07.(2)°, V=2764.599)ų, Z=4, R=0.0503.

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