The Potential Barrier Heights and the Carrier Densities of ZnO Varistors with Various Compositions

  • Cho, Sung-Gurl (Department of Electronic Materials Engineering and Advanced Materials Research Institute, Gyeongsang National University) ;
  • Kwak, Min-Hwan (Department of Electronic Materials Engineering and Advanced Materials Research Institute, Gyeongsang National University) ;
  • Lee, Sang-Ki (Department of Electronic Materials Engineering and Advanced Materials Research Institute, Gyeongsang National University) ;
  • Kim, Hyung-Sik (Korea Electrotechnology Research Institute, Changwon)
  • Published : 1998.03.01

Abstract

The barrier heights and carrier densities of ZnO varistors with various compositions were estimated using C-V, J-V and $\rho$-T relations. The barrier heights obtained from C-V and J-V plots were 0.73~5.98 eV and 0.25~2.70 eV, respectively. The carrier densities estimated from C-V plots were ~$10^{18}cm^{-3}$. Acceptable values of the barrier heights and the carrier densities were obtained from $\rho$-1/T curves and the capacitances at zero bias; 0.6~0.8 eV for the barrier heights and ~$10^{17}cm^{-3}$ for carrier densities. Addition of cobalt increased the barrier height and the carrier density, while chromium slightly lowered both of them.

Keywords

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