• Explosives and Blasting
• /
• v.8 no.3
• /
• pp.3-13
• /
• 1990

First ot of all, under given condition such as bit gage of 36mm Drill bit with right class of jack-leg-experimental test carried out from two face of Bench, firing of each hole brought 90 degree Angle face and them measured length of Burden and charged ammount of powder as following. $ca=\frac{A}{SW}$ A=Activated Area A=nd i=m S=Peripheral length of charged, room Ca=Rock Coeffiecency d: di=Hole diameter When constructed subway of Seoul in 1980 the blasting works increased complaint of ground vibration, in order to prevent the damage to structures. Some empirical equations were made as follows on condition with Jackleg Drill (Bit Gage 36mm) and within 30 meter distance between blasting site and structures. $V=K(D/W)^{-n}$ N=1.60 - 1.78 K= 48 - 138 Project is one of contineous works to above a determination of empirical equation on the cautious blasting vibration with Crawler Drill (70-75mm) in long distance. $V=41(D/\sqrt[3]{W})^{-1.41}$ $30m\le{D}\le{100m}$ $V=124(D/\sqrt[3]{W})^{-1.66}$ $100m\le{D}\le{285m}$.

• ETRI Journal
• /
• v.28 no.3
• /
• pp.386-388
• /
• 2006

Monolithic SiGe heterojunction bipolar transistor (HBT) variable gain amplifiers (VGAs) with a feedforward configuration have been newly developed for 5 GHz applications. Two types of the feedforward VGAs have been made: one using a coupled-emitter resistor and the other using an HBT-based current source. At 5.2 GHz, both of the VGAs achieve a dynamic gain-control range of 23 dB with a control-voltage range from 0.4 to 2.6 V. The gain-tuning sensitivity is 90 mV/dB. At $V_{CTRL}$= 2.4 V, the 1 dB compression output power, $P_{1-dB}$, and dc bias current are 0 dBm and 59 mA in a VGA with an emitter resistor and -1.8 dBm and 71mA in a VGA with a constant current source, respectively.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2022.10a
• /
• pp.115-117
• /
• 2022

The electrical characteristics of the monolithic 3-dimensional static random access memory consisting of a feedback field-effect transistor (M3D-SRAM-FBFET) was investigated using technology computer-aided design (TCAD). The N-type FBFET and N-type MOSFET are designed with fully depleted silicon on insulator (FDSOI), and those are located at bottom and top tiers, respectively. For the M3D-SRAM-FBFET, as the supply voltage decreased from 1.9 V to 1.6 V, the reading on-current decreased approximately 10 times.

• Journal of the Korean Society of Food Science and Nutrition
• /
• v.37 no.10
• /
• pp.1278-1286
• /
• 2008

The effect of Tween 20 addition on changes in the stability of methylcellulose (MC) emulsions (1 wt% MC, 10 wt% n-tetradecane, 20 mM bis-tris buffer, pH 7) was investigated by creaming stability and orthokinetic stability measurements. In the case of MC emulsions containing varying amounts of oil (1$\sim$30 wt%) and no Tween 20 added, creaming stability, judged by mean migration velocity of fat globules ($V_m$), was found to depend on droplet size: the larger the droplet size, the worse the stability [$V_m$: 0.326 $\mu$m $min^{-1}$ ($d_{32}$: 0.32 $\mu$m) ${\rightarrow}V_m$: 0.551 $\mu$m $min^{-1}$ ($d_{32}$: 0.53 $\mu$m)]. With Tween 20, creaming stability was found to be worse than the one without Tween 20, except for MC emulsion containing 0.2 wt% Tween 20. In addition, cream stability was the lowest with the lowest concentration of Tween 20 and a tendency to recover with increasing Tween 20 concentration [$V_m$: 0.598 $\mu$m $min^{-1}$ (0.01 wt%)${\rightarrow}V_m$: 0.389 $\mu$m $min^{-1}$ (0.2 wt%)] was found. From viscosity measurement for aqueous bulk phase of MC emulsions, such a change in the creaming stability was found to coincide well with the results of viscosity measurement. Therefore, it was reasonable to say that creaming stability of MC emulsions containing Tween 20 depended on MC concentration in aqueous bulk phase, which was in turn varied by competitive adsorption between MC and Tween 20 at the oil droplet surface. In case of orthokinetic stability, judged by destabilization time ($t_d$), it was found that the addition of Tween 20 resulted in lowered stability with more pronounce tendency at higher concentrations [$t_d$: 160 min (0.03 wt%)${\rightarrow}t_d$: 100 min (0.2 wt%)]. Moreover, combined with previous results, the orthokinetic stability of MC emulsions containing Tween 20 was found to be exponentially proportional to MC load. In conclusion, competitive adsorption between MC and Tween 20 may affect the stability properties of MC emulsion to varying extents, depending on the concentration of Tween 20.

• The Journal of Korean Institute of Communications and Information Sciences
• /
• v.29 no.10A
• /
• pp.1223-1229
• /
• 2004

A variable-gain low-voltage low noise amplifier MMIC operating at 5GHz frequency band is designed and implemented using the ETRI 0.5$\mu\textrm{m}$ GaAs MESFET library process. This low noise amplifier is designed to have the variable gain for adaptive antenna array combined in HIPERLAN/2. The feedback circuit of a resistor and channel resistance controlled by the gate voltage of enhancement MESFET is proposed for the variable-gain low noise amplifier consisted of cascaded two stages. The fabricated variable gain amplifier exhibits 5.5GHz center frequency, 14.7dB small signal gain, 10.6dB input return loss, 10.7dB output return loss, 14.4dB variable gain, and 2.98dB noise figure at V$\_$DD/=1.5V, V$\_$GGl/=0.4V, and V$\_$GG2/=0.5V. This low noise amplifier also shows-19.7dBm input PldB, -10dBm IIP3, 52.6dB SFDR, and 9.5mW power consumption.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.41 no.11
• /
• pp.21-27
• /
• 2004

In this paper, millimeter-wave monolithic integrated circuit(MIMIC) low noise amplifier(LNA) for V-band, which is applicable to 60 GHz wireless local area network(WLAN), was fabricated using the high performance 0.1 ${\mu}{\textrm}{m}$ $\Gamma$-gate pseudomorphic high electron mobility transistor(PHEMT). The DC characteristics of PHEMT are drain saturation current density(Idss) of 450 mA/mm and maximum transconductance(gm, max) of 363.6 mS/mm. The RF characteristics were obtained the current gain cut-off frequency(fT) of 113 GHz and the maximum oscillation frequency(fmax) of 180 GHz. V-band MIMIC LNA was designed using active and passive device library, which is composed of 0.1 ${\mu}{\textrm}{m}$ $\Gamma$-gate PHEMT and coplanar waveguide(CPW) technology. The designed V-band MIMIC LNA was fabricated using integrated unit processes of active and passive device. The measured results of V-band MIMIC LNA are shown S21 gain of 21.3 dB, S11 of -10.6 dB at 60 GHz and S22 of -29.7 dB at 62.5 GHz. The measured result of V-band MIMIC LNA was shown noise figure (NF) of 4.23 dB at 60 GHz.

• Journal of the Optical Society of Korea
• /
• v.18 no.6
• /
• pp.739-745
• /
• 2014

We have demonstrated a $Ti:LiNbO_3$ electro-optic electric-field sensor utilizing a $1{\times}2$ Y-fed balanced-bridge Mach-Zehnder interferometric (YBB-MZI) modulator, which uses a 3-dB directional coupler at the output and has two complementary output waveguides. A dc switching voltage of ~25 V and an extinction ratio of ~12.5 dB are observed at a wavelength of $1.3{\mu}m$. For a 20 dBm rf input power, the minimum detectable electric fields are ~8.21, 7.24, and ~13.3 V/m, corresponding to dynamic ranges of ~10, ~12, and ~7 dB at frequencies of 10, 30, and 50 MHz respectively. The sensors exhibit almost linear response for an applied electric-field intensity from 0.29 V/m to 29.8 V/m.

• Electrical & Electronic Materials
• /
• v.6 no.4
• /
• pp.330-338
• /
• 1993

Channel의 폭과 길이가 15 x 15.mu.m, 15 x 1.5.mu.m, 1.9 x 1.7.mu.m인 비휘발성 SNOSFET EEPROM 기억소자를 CMOS 1 Mbit 설계규칙에 의하여 제작하고 체널크기에 따른 $I_{D}$- $V_{G}$특성 및 스위칭 특성을 조사하여 비교하였다. 게아트에 전압을 인가하여 질화막에 전하를 주입시키거나 소거시킨 후 특성을 측정한 결과, 드레인전류가 적게 흐르는 저전도상태와 전류가 많이 흐르는 고전도상태로 되는 것을 확인하였다. 15 x 15.mu.m의 소자는 전형적인 long channel특성을 나타냈으며 15 x 1.5.mu.m, 1.9 x 1.7.mu.m는 short channel특성을 보였다. $I_{D}$- $V_{G}$ 특성에서 소자들의 임계 문턱전압은 저전도상태에서 $V_{W}$=+34V, $t_{W}$=50sec의 전압에서 나타났으며 메모리 윈도우 폭은 15 x 15.mu.m, 15 x 1.5.mu.m, 1.9 x 1.7.mu.m의 소자에서 각각 6.4V, 7.4V, 3.5V였다. 스위칭 특성조사에서 소자들은 모두 논리스윙에 필요한 3.5V 메모리 윈도우를 얻을 수 있었으며 논리회로설계에 적절한 정논리 전도특성을 가졌다.특성을 가졌다.다.다.

• The Transactions of the Korea Information Processing Society
• /
• v.2 no.1
• /
• pp.66-74
• /
• 1995

A 8-bit 15MHz CMOS subranging Analog-to-Digital converter for high-speed, low-power consumption applications is described. Subranging, 2 step flash, A/D converter used a new resistor string and a simple comparator architecture for the low power consumption and small chip area. Comparator exhibites 80dB loop gain, 50MHz conversion speed, 0.5mV offset and maximum error of voltage divider was 1mV. This Analog-to-Digital converter has been designed and fabricated in 1.2 m N-well CMOS technology. It consumed 150mW power at ＋5/-5V supply and delayed 65ns. The proposed Analog-to-Digital converter seems suitable for high- speed, low-power consumption, small area applications and one-chip mixed Analog- Digital system. Simulations are performed with PSPICE and a fabricated chip is tested.

• ETRI Journal
• /
• v.42 no.5
• /
• pp.790-798
• /
• 2020

Herein, a low-ripple coarse-fine digital low-dropout regulator (D-LDO) without ringing in the transient state is proposed. Conventional D-LDO suffers from a ringing problem when settling the output voltage at a large load transition, which increases the settling time. The proposed D-LDO removes the ringing and reduces the settling time using an auxiliary power stage which adjusts its output current to a load current in the transient state. It also achieves a low output ripple voltage using a comparator with a complete comparison signal. The proposed D-LDO was fabricated using a 65-nm CMOS process with an area of 0.0056 μ㎡. The undershoot and overshoot were 47 mV and 23 mV, respectively, when the load current was changed from 10 mA to 100 mA within an edge time of 20 ns. The settling time decreased from 2.1 ㎲ to 130 ns and the ripple voltage was 3 mV with a quiescent current of 75 ㎂.