• 제목/요약/키워드: V-t curve

검색결과 192건 처리시간 0.025초

PLASMA POLYMERIZED THIN FILMS GROWN BY PECVD METHOD AND COMPARISON OF THEIR ELECTROCHEMICAL PROPERTIES

  • I.S. Bae;S.H. Cho;Park, Z. T.;Kim, J.G.;B. Y. Hong;J.H. Boo
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2003년도 추계학술발표회초록집
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    • pp.119-119
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    • 2003
  • Plasma polymerized organic thin films were deposited on Si(100) glass and Copper substrates at 25 ∼ 100 $^{\circ}C$ using cyclohexane and ethylcyclohexane precursors by PECVD method. In order to compare physical and electrochemical properties of the as-grown thin films, the effects of the RF plasma power in the range of 20∼50 W and deposition temperature on both corrosion protection efficiency and physical properties were studied. We found that the corrosion protection efficiency (P$\_$k/), which is one of the important factors for corrosion protection in the interlayer dielectrics of microelectronic devices application, was increased with increasing RF power. The highest P$\_$k/ value of plasma polymerized ethylcyclohexane film (92.1% at 50 W) was higher than that of the plasma polymerized cyclohexane film (85.26% at 50 W), indicating inhibition of oxygen reduction. Impedance analyzer was utilized for the determination of I-V curve for leakage current density and C-V for dielectric constants. To obtain C-V curve, we used a MIM structure of metal(Al)-insulator(plasma polymerized thin film)-metal(Pt) structure. Al as the electrode was evaporated on the ethylcyclohexane films that grew on Pt coated silicon substrates, and the dielectric constants of the as-grown films were then calculated from C-V data measured at 1㎒. From the electrical property measurements such as I-V ana C-V characteristics, the minimum dielectric constant and the best leakage current of ethylcyclohexane thin films were obtained to be about 3.11 and 5 ${\times}$ 10$\^$-12/ A/$\textrm{cm}^2$ and cyclohexane thin films were obtained to be about 2.3 and 8 ${\times}$ 10$\^$-12/ A/$\textrm{cm}^2$.

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혈청(血淸)$T_3$의 방사면역측정시(放射免疫測定時) 정도관리(精度管理)에 관(關)한 검토(檢討) (A Study on the Quality Control of the Radioimmunoassay Serum $T_3$(triiodothyronine))

  • 경광현;최영숙
    • 대한방사선기술학회지:방사선기술과학
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    • 제5권1호
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    • pp.55-62
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    • 1982
  • Measurement of triiodothyronine($T_3$) concentration is useful for the diagnosic and treatment of thyroid gland diseases. Fundermental studies of measurement of $T_3$ concentration by radioimmunoassay were performed and values determined by commercially available kit, Coat-A-Count, Diagnostic Products Corporation. The optimal utilization of the radioimmunoassay in measuring $T_3$ concentrations is dependant not only on high quality performance of the assay, but also on their appropriate application to the clinical situation. These are several aspects that must be considered in every individual case. These include factors such as accurate pippeting in reagent preparation in the assay and through decanting to remove all visible moisture after incubation steps and so forth. In attempt to assess quality control of the radioimmunoassay of serum $T_3$, serum pools with high, medium, low $T_3$ concentrations were assayed for each of 5 samples. The results obtained with this study were as follow: 1. The coefficient of variation(C. V.) for the standard curve ranged between $0.2{\sim}3.5%$. 2. It was necessary that both incubation time and temperature should correctly be maintained all the in the assay performance. 3. The precison with the $T_3$ RIA procedure was good. 4. The measured values of serially diluted serum $T_3$ concentration with Ong/dl standard solution was proportional to the predicted values. However dilution curve of distilled water was not strait. 5. Calculated $T_3$ values of patient serum in normal group was $107.8{\pm}25.90ng/dl$ in male patient and $127.29{\pm}24.08ng/dl$ in female patient.

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NaAlSiO4-KAlSiO4-SiO2-H2O 4성분계(成分系)의 불변점부근(不變點附近)의 P-T 곡선(曲線)의 변이(變移) (THE SEQUENCE OF P-T CURVES AROUND A QUATERNARY INVARIANT POINT IN THE SYSTEM NaAlSiO4-KAlSiO4-SiO2-H2O)

  • 김기태
    • 자원환경지질
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    • 제5권2호
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    • pp.77-86
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    • 1972
  • Bowen의 "Petrogeny's Residua System"으로 알려져 있는 NaAlSiO_4-KAlSiO_4-SiO_2-H_2O계(系)는 대륙지각(大陸地殼)에 있어 화성암(火成岩)과 변성암(變成岩) 간(間)의 상(相)의 관계(關係)를 이해(理解)하는데 대단히 중요(重要)한 것이다. 그럼에도 불구하고 이 계내(系內)의 상(相)의 관계(關係)는 아직 Mohorovicic 불연속면(不連續面) 이상(以上)의 위치(位置)의 P-T 범위(範圍)의 것 조차 완전(完全)히 알려져 있지 않다. 그러므로 이 상(相)들 간(間)의 관계(關係)를 알 필요(必要)가 있다. 본(本) 연구(硏究)는 Schreinemaker 법칙(法則)을 적용한 계내(系內)에 있는 불변점(不變點)(~5kb/${\sim}635^{\circ}C$) 부근(附近)에 있는 순서를 추이(推理)하였는데 이는 주(主)로 Morse (1969a&6) 실험자료에 근거하였다. 결론(結論)으로 불변점(不變點)(~5kb/${\sim}635^{\circ}C$) 부근(附近)에서의 P-T 곡선(曲線)의 순서(順序)는 각각(各各) P-T 투영(投影)에서는 (L), (Anl), (Or), (V), (Ne), 및 (Ab)의 순(順)이고 P-T 곡선(曲線) (L)은 P-T 구역(區域) 하부(下部)로 연장되며 (Anl) 곡선(曲線)은 불변점(不變點)보다 높은 온도(溫度)와 낮은 압력(壓力)의 구역(區域)으로 연장(延長)된다는 것을 알았다.

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A Study on Electro-optical Characteristics of the UV Aligned FFS Cell on the Organic Layer

  • Han, Jeong-Min;Ok, Chul-Ho;Hwang, Jeoung-Yeon;Kim, Byoung-Yong;Kang, Dong-Hun;Kim, Jong-Hwan;Kim, Young-Hwan;Han, Jin-Woo;Lee, Sang-Keuk;Seo, Dae-Shik
    • Transactions on Electrical and Electronic Materials
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    • 제8권3호
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    • pp.135-138
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    • 2007
  • In this study, we investigated the electro-optical (EO) characteristic of fringe-field switching (FFS) mode cell by the two kinds of ultraviolet (UV) alignment method on the organic thin film (polyimide: PI). The suitable organic layers for FFS cell and the aligning capabilities of nematic liquid crystal (NLC) using the in-situ photoalignment method were studied; Disclination is observed after conventional photoalignment method for 1h, and in-situ photoalignment method for 1h. Monodomain alignment of the NLC can be observed via insitu photo alignment method for 2 h and 3 h. It is considered that NLC alignment is due to photo-depolymerization of the polymer with oblique non-polarized UV irradiation on PI surface. An unstable V-T curve of UV-aligned FFS-LCD with conventional photoalignment method can be achieved. However, a stable V-T curve of UV-aligned FFS-LCD with in-situ photoalignment method (1 h), and V-T curve of UV-aligned FFS-LCD with in-situ photo alignment method was much stable comparing with that of other UV-aligned FFSLCD's. As a result, more stable EO performance of UV-aligned FFS-LCD with in-situ photoalignment method for 3h is obtained than that of the other UV-aligned FFS-LCD's.

선망어업의 생산성 향상에 관한 연구-II - 파워불록과 트리플랙스용 선망 모형의 유속에 따른 침강거동 - (Studies on the improvement of the productivity of purse seine fishery-II - The sinking movements with the flow velocity on the model purse seine of the subjective power block and triplex)

  • 김석종
    • 수산해양기술연구
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    • 제43권1호
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    • pp.1-11
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    • 2007
  • It is the basic studies for productivity improvement and laborsaving of purse seine fishery. Because the seine shape is apt to be transformed in seine shooting process due to the effect of tide, this study is intended to establish 4 steps, whose flow velocity are 0, 2, 4 and 6cm/sec, in flume tank and perform the experiment to review the character. We used two model seines designed on the scale of 1 to 180 based on the power block seine, which is the mackerel purse seine generally used in the near sea of Jeju Island and triplex seine, which is the mackerel purse seine of one boat system fishing expected in the future, for the experiment, analyzed of the sinking movements on the two seines and its results are as follows. In the setting over the flow velocity 6cm/sec, experiment was impossible because of flying and transformation of seine were severe. The sinking movements of P seine and T seine generally showed linear phenomenon and the sinking speed showed gentle curve shape. Sinking tendency was distinguished by existence of flow velocity. When there is flow velocity, it showed the phenomenon that it sinking by similar type. Although sinking depth and sinking speed did not show distinguished classification, P seine shows bigger than T seine. When there was in flow velocity, the elapsed time(Et) and sinking depth (PDp, TDp) of P seine and T seine can be shown such experimental equations as PDp=(0.21V+4.96)Et-(0.62V-0.10) and TDp=(0.19V+4.95)Et-(0.72V+0.34). When there was in flow velocity, the elapsed time and siking speed (PSp, TSp) of P seine and T seine can be shown such experimental equations as $PSp=-0.11Et^2+1.42Et+1.75\;and\;TSp=-0.11Et^2+1.41Et+1.37$.

Bi계 고온초전도 선재의 전류 - 전압 특성 (V-I characteristics of Bi based HTSC wire)

  • 장현만;오상수;하동우;류강식;김상현
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1996년도 추계학술대회 논문집
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    • pp.295-299
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    • 1996
  • In order to investigate the relation between the microstructure and the V-I characteristics of HTSC wire, single and 19 filamentary silver-sheathed Bi2223 tapes were fabricated using the powder-in-tube method. Higher J$\_$c/ at 77.3 K(0 T) and 4.2 K(in magnetic field) can be achieved for the 19 filamentary Bi tape, comparing the single filamentary tape. However, the I$\_$c/ distribution of 19 filamentary Bi2223 tape was found to be wider by analyzing the curve obtained from 2nd differential of V-I data. This was considered to be resulted from worse uniformity of oxide filament due to severe cold working.

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펄스 전류 하에서 AZ31 마그네슘 합금의 플라즈마전해산화 피막의 형성 거동 (PEO Film Formation Behavior of AZ31 Mg Alloy under Pulse Current)

  • 문성모
    • 한국표면공학회지
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    • 제55권5호
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    • pp.292-298
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    • 2022
  • In this study, PEO (plasma electrolytic oxidation) film formation behavior of AZ31 Mg alloy under application of 300 Hz pulse current was studied by the analyses of V-t curve, arc generation behavior, PEO film thickness and morphology of PEO films with treatment time in 0.05 M NaOH + 0.05 M Na2SiO3 + 0.1 M NaF solution. PEO films was observed to grow after 10 s of application of pulse current together with generation of micro-arcs. PEO film grew linearly with treatment time at a growth rate of about 5.58 ㎛/min at 200 mA/cm2 of pulse current but increasing rate of film formation voltage became lowered largely with increasing treatment time after passing about 250 V, suggesting that resistivity of PEO films during micro-arc generation decreases with increasing film formation voltage at more than 250 V.

Hot Wall Epitaxy (HWE)법에 의한 ZnIn2Se4 단결정 후막 성장과 열처리 효과 (Growth and effect of thermal annealing for ZnIn2Se4 single crystalline thick film by hot wall epitaxy)

  • 홍명석;홍광준
    • 센서학회지
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    • 제17권6호
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    • pp.437-446
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    • 2008
  • Single crystalline ${ZnIn_2}{Se_4}$ layers were grown on thoroughly etched semi-insulating GaAs (100) substrate at $400^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating ${ZnIn_2}{Se_4}$ source at $630^{\circ}C$. The crystalline structure of the single crystalline thick films was investigated by the photoluminescence (PL) and Double crystalline X-ray rocking curve (DCRC). The carrier density and mobility of ${ZnIn_2}{Se_4}$ single crystalline thick films measured from Hall effect by van der Pauw method are $9.41{\times}10^{16}cm^{-3}$ and $292cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the ${ZnIn_2}{Se_4}$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)$=1.8622 eV-$(5.23{\times}10^{-4}eV/K)T^2$/(T+775.5 K). After the as-grown ${ZnIn_2}{Se_4}$ single crystalline thick films was annealed in Zn-, Se-, and In-atmospheres, the origin of point defects of ${ZnIn_2}{Se_4}$ single crystalline thick films has been investigated by the photoluminescence (PL) at 10 K. The native defects of $V_{Zn}$, $V_{Se}$, $Zn_{int}$, and $Se_{int}$ obtained by PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the Se-atmosphere converted ${ZnIn_2}{Se_4}$ single crystalline thick films to an optical p-type. Also, we confirmed that In in ${ZnIn_2}{Se_4}$/GaAs did not form the native defects because In in ${ZnIn_2}{Se_4}$ single crystalline thick films existed in the form of stable bonds.

설계 일관성 평가 모형의 고찰과 개선방안 연구 (Review and Improvement of Highway Design Consistency Evaluation Models)

  • 김상엽;최재성;양지은;김문겸
    • 한국도로학회논문집
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    • 제8권4호
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    • pp.63-74
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    • 2006
  • 합리적인 도로 설계를 통해 운전자들의 기대를 만족시켜, 운전자들이 도로의 조건을 충분히 인지하여 주행하도록 하는 것은 매우 중요하다. 이러한 도로의 경우 우리는 흔히 선형의 일관성이 확보되어 운전자들이 안전하고 편안한 차량 주행을 할 수 있는 것이라고 말한다. 위에서 언급한 설계 일관성의 확보 유무를 평가하기 위해 국내 외에서 많은 연구가 이루어지고 있다. 본 연구에서는 기존의 국내 외 설계 일관성 평가 방법을 유형별로 구분하여 정리해 보고, 국내현실에 가장 적합하다고 판단되는 방법론을 응용하여, 일반국도의 과거 조사 자료를 바탕으로 현실적인 설계 일관성기법을 개발하고자 한다. 본 연구에서 개발한 모형은 곡선구간 상류부 100m지점의 속도($V_t$)를 변수로 포함하는 예측식으로 양방향 2차로는 $R{\leq}200m$인 경우와 R>200m인 경우로 나누어 예측식을 개발하였다. $R{\leq}200m$인 경우에는 곡선반경(R)과 $V_t$의 영향이 있고, R>200m인 구간에서는 기하구조의 영향보다는 곡선 상류부 100m지점의 속도($V_t$)가 영향이 있는 것으로 판단된다. 양방향 4차로의 경우도 R값을 400m라는 값에서 두 구간으로 구분하여 예측하였지만 양방향 2차로와는 달리 두 구간에서 모두 기하구조의 영향보다는 $V_t$의 영향이 더 큰 것으로 판단되었다. 향후 보다신뢰도가 높은 예측모형식 개발을 위해서는 더욱 정확하고 다양한 기하구조의 자료의 수집이 필요하다. 그리고 곡선 상류부 직선구간의 여러 지점의 속도를 수집하면 보다 신뢰도가 높은 예측 모형식 개발이 가능할 것이다.

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NASICON 고체전해질의 이온전도도 계산 (I) Mid-Na의 영향을 고려하지 않은 경우 (Computation of Ionic Conductivity in NASICON Solid Electrolytes (I) Conduction Paths with no Mid-Na Sites)

  • 최진삼;서양곤;강은태
    • 한국세라믹학회지
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    • 제32권8호
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    • pp.957-965
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    • 1995
  • The ionic conductivityof NASICON solid electrolytes was simulated by using Monte Carlo Method (MCM) based on a hopping model as functions of temoperature and composition. Two conduction paths were used : jumping from Na1 to Na2 and jumping from Na1 to Na2 and jumping from Na2 to Na2. Vacancy availability factor, V was affected by composition, temperature and the conduction paths. For β"-Alumina, it was known that the minimum of charge correlation factor, fc appears at the composition, p=0.5, but there was not shown the minimum of fc for NASICON. When the NASICON composition, x, approaches 2.5, the curve of In σT vs. 1/T* was shown Arrhenius behavior and also In (VWfc) was a linear function of 1/T*. The results of simulations on the considered conduction paths didn't agree with the experimental results. Thus it will be necessary to include the another Na sites as mid-Na site on the conduction path to obtain the better results.

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