• 제목/요약/키워드: V-t curve

검색결과 192건 처리시간 0.024초

22 kV 케이블의 누설전류 및 절연저항의 선형적 변화 (A Linear Change of Leakage Current and Insulation Resistance of 22 kV Cables)

  • 엄기홍;이관우
    • 한국인터넷방송통신학회논문지
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    • 제15권3호
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    • pp.169-173
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    • 2015
  • 이 논문은 사용한지 13년 지난 운전 중 22 kV 케이블시스템을, 7년 동안 절연저항을 측정하여 그 결과를 연구한 논문이다. 우리는 발전소에서 설치 운전 중인 고전압 케이블이 시간에 따라 성능이 악화되는 현상의 추세를 결정하는 수명지수를 파악하였다. 위한 논문이다. 케이블 시스템은 시간에 따라 절연 저항이 감소한다. 초기 케이블 시스템은 아레니우스 열화 곡선을 따른다. 초기에는 수명 지수 n값이 9로 설계하였고, 이후 n값을 상향하여 16으로 결정하였다. 이유는 고전압에서 케이블이 동작할 경우, n값이 클 때 파괴특성이 높지 않고, n값이 낮은 값에서 파괴특성이 높았기 때문이다. 그러나 전압열화에 의하여 와이블 프롯을 따른 v-t 특성에 의하여 n값은 10~11의 값을 갖는 것을 확인하였다. 과거 케이블 설계 시 정한 n=9의 이론적 근거와 n=16 으로 높아진 원인을 파악함으로써 누설 전류 및 절연 저항의 선형적인 변화를 확인하였다. 단기적으로는 운전 중 케이블 시스템의 진단 평가에 활용되며, 장기적으로는 발전소 부하에서 동작 중인케이블 시스템의 설치 및 운영에 있어서 원가를 절감하기 위한 노력에 기여하고자 한다.

토끼 혈장 중 피록시캄의 HPLC 분석 및 패취제 투여 후 경피흡수 (HPLC Analysis of Piroxicam in the Rabbit Plasma and its Bioavailability after the Transdermal Administration of Patches)

  • 신대환;박승혁;이경복;이종길;정연복
    • Journal of Pharmaceutical Investigation
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    • 제39권3호
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    • pp.177-183
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    • 2009
  • A rapid and sensitive reversed-phase high performance liquid chromatography (HPLC) method was developed for the determination of piroxicam in the rabbit plasma. After a treatment of plasma sample by liquid-liquid extraction, the drug was analyzed on an HPLC system with ultraviolet detection at 330 nm. HPLC was carried out using reversed-phase isocratic elution with a C18 column, a mobile phase of a mixture of acetonitril, doubly deionized water and acetic acid 43.74:56.00:0.26 v/v%) at a flow rate of 1.1 mL/min. The chromatograms showed good resolution and sensitivity and no interference of plasma. The calibration curve for the drug in plasma sample was linear over the concentration range of 0.01-2.0 ${\mu}$g/mL. The intra- and inter-day assay accuracies of this method ranged from 86.82% to 108.33% of normal values and the precision did not exceed 13% of relative standard deviation. The plasma concentration of piroxicam decreased to below the quantifiable limit at 12 hr after the i.v. bolus administration to rabbits following dose of 0.375 mg/kg yielding a apparen t plasma half life of 1.38 hr. The transdermal route prolongs plasma levels of piroxicam. The bioavailability, calculated from the dose-adjusted ratio of the $AUC_{transdermal}$ to the $AUC_{i.v.}$, was 7.44%. The plasma concentration of piroxicam was detected by 48 hr after the transdermal administration of patch at a dose of 32 mg/kg. This method was suitable for cutaneous absorption studies of piroxicam in the rabbit after transdermal administration of different types of dosages of the drug.

LiF(Mg,Cu,Na,Si)형광체의 열자극엑소전자방출 (Thermally Stimulated Exoelectron Emission from LiF(Mg,Cu,Na,Si) Phosphor)

  • 도시홍;정중현;청목정의;서천조웅;옥천양일;기부광효
    • 센서학회지
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    • 제3권2호
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    • pp.11-15
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    • 1994
  • LiF(Mg,Cu,Na,Si)형광체의 ${\gamma}$ 선과 ${\beta}$ 선에 대한 TSEE 특성을 조사하였다. 이 형광체의 TSEE glow 곡선은 $20^{\circ}C$에서 $400^{\circ}C$사이에서 5개의 피크를 나타내었으며 주피크는 $240^{\circ}C$였다. $^{60}Co$ ${\gamma}$ 선에 대한 형광체의 감도는 약 450 counts/mR 이었다. ${\beta}$ 선에 대한 TSEE 에너지의존성은 ${\beta}$ 입자의 평균에너지 0.02MeV에서 0.8MeV 사이에서 ${\pm}10%$이었다. 그리고 이 형광체의 ${\beta}$ 선에 대한 TSEE 효율은 $(2{\sim}15){\times}10^{-3}$ 이었다.

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Hot Wall Epitaxy(HWE)법에 의한 ZnAl2Se4 단결정 박막 성장과 가전자대 갈라짐에 대한 광전류 연구 (Growth and Electrical Properties of ZnAl2Se4 Single Crystal Thin Film by Hot Wall Epitaxy)

  • 박향숙;방진주;이기정;강종욱;홍광준
    • 한국재료학회지
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    • 제23권12호
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    • pp.714-721
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    • 2013
  • A stoichiometric mixture of evaporating materials for $ZnAl_2Se_4$ single-crystal thin films was prepared in a horizontal electric furnace. These $ZnAl_2Se_4$ polycrystals had a defect chalcopyrite structure, and its lattice constants were $a_0=5.5563{\AA}$ and $c_0=10.8897{\AA}$.To obtain a single-crystal thin film, mixed $ZnAl_2Se_4$ crystal was deposited on the thoroughly etched semi-insulating GaAs(100) substrate by a hot wall epitaxy (HWE) system. The source and the substrate temperatures were $620^{\circ}C$ and $400^{\circ}C$, respectively. The crystalline structure of the single-crystal thin film was investigated by using a double crystal X-ray rocking curve and X-ray diffraction ${\omega}-2{\theta}$ scans. The carrier density and mobility of the $ZnAl_2Se_4$ single-crystal thin film were $8.23{\times}10^{16}cm^{-3}$ and $287m^2/vs$ at 293 K, respectively. To identify the band gap energy, the optical absorption spectra of the $ZnAl_2Se_4$ single-crystal thin film was investigated in the temperature region of 10-293 K. The temperature dependence of the direct optical energy gap is well presented by Varshni's relation: $E_g(T)=E_g(0)-({\alpha}T^2/T+{\beta})$. The constants of Varshni's equation had the values of $E_g(0)=3.5269eV$, ${\alpha}=2.03{\times}10^{-3}eV/K$ and ${\beta}=501.9K$ for the $ZnAl_2Se_4$ single-crystal thin film. The crystal field and the spin-orbit splitting energies for the valence band of the $ZnAl_2Se_4$ were estimated to be 109.5 meV and 124.6 meV, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that splitting of the ${\Delta}so$ definitely exists in the ${\Gamma}_5$ states of the valence band of the $ZnAl_2Se_4/GaAs$ epilayer. The three photocurrent peaks observed at 10 K are ascribed to the $A_1$-, $B_1$-exciton for n = 1 and $C_{21}$-exciton peaks for n = 21.

HEMM Al-SiO2-X 복합 분말을 Al-Mg 용탕에서 자발 치환반응으로 제조된 Al-Si-X/Al2O3 복합재료의 조직 및 마멸 특성 (Microstructure Evaluation and Wear Resistance Property of Al-Si-X/Al2O3 Composite by the Displacement Reaction in Al-Mg Alloy Melt using High Energy Mechanical Milled Al-SiO2-X Composite Powder)

  • 우기도;김동건;이현범;문민석;기웅;권의표
    • 한국재료학회지
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    • 제18권6호
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    • pp.339-346
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    • 2008
  • Single-crystal $ZnIn_2S_4$ layers were grown on a thoroughly etched semi-insulating GaAs (100) substrate at $450^{\circ}C$ with a hot wall epitaxy (HWE) system by evaporating a $ZnIn_2S_4$ source at $610^{\circ}C$. The crystalline structures of the single-crystal thin films were investigated via the photoluminescence (PL) and Double-crystal X-ray rocking curve (DCRC). The temperature dependence of the energy band gap of the $ZnIn_2S_4$ obtained from the absorption spectra was well described by Varshni's relationship, $E_g(T)=2.9514\;eV-(7.24{\times}10^{-4}\;eV/K)T2/(T+489K)$. After the as-grown $ZnIn_2S_4$ single-crystal thin films was annealed in Zn-, S-, and In-atmospheres, the origin-of-point defects of the $ZnIn_2S_4$ single-crystal thin films were investigated via the photoluminescence (PL) at 10 K. The native defects of $V_{Zn}$, $V_S$, $Zn_{int}$, and $S_{int}$ obtained from the PL measurements were classified as donor or acceptor types. Additionally, it was concluded that a heat treatment in an S-atmosphere converted $ZnIn_2S_4$ single crystal thin films into optical p-type films. Moreover, it was confirmed that In in $ZnIn_2S_4$/GaAs did not form a native defects, as In in $ZnIn_2S_4$ single-crystal thin films existed in the form of stable bonds.

Age Studies on the Butter Fish Population from Southwestern Waters of Korea

  • Han, Pyung Chin
    • 한국해양학회지
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    • 제8권2호
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    • pp.68-74
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    • 1973
  • The present paper concerns the age determination and growth of butter fish, Pampus argenteus from the southwestern waters of Korea by otolith reading. 743 specimens taken by stow-net in the southern part of the Yellow Sea and northeastern part of the East China Sea during the period from October 1972 to September 1973 were examined. Results of the study are summarized as follows: 1. Sex ratio of females to males was found to be 2:1. 2. Ring marks on the otolith were found to be formed twice a year, once during the period of January-May and the other time in September. 3. The Lee's phenomenon was observed on the otolith sample. 4. The relationship between the radius of otolith(R) and fork length(L) was found to be as follows: R=0.3069+0.0133L 5. Calculated fork length at the time of otolith ring formation are found to be as follows:I-ring,71.67mm; II-ring, 125.05mm; III-ring, 168.65mm; IV-ring, 201.74mm; V-ring, 225.80mm; VI-ring, 240.84mm. 6. Maximum fork length calculated according to the diagram of Walford's growth transformation was found to be 281.5mm. 7. Growth curve, when related to the von Bertalanffy's equation, was laid out as $L_{t}=281.5[1-e$^{-0.674(t-0.128)}]$

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2.5 Gbps 신호의 98km 무중계 광섬유 전송 (Repeaterless Transmission of 2.5Gbps Signal Over 98Km Optical Fibers)

  • 윤태열;한정희;이창희;심창섭
    • 전자공학회논문지A
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    • 제31A권2호
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    • pp.26-38
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    • 1994
  • We demonstrate a repeatless transmission of 2.5 Gbps digital signal over 98 km opticla filbers using optical transmitter and optcial receiver which are designed and implemented using commercially available devices. The optical transmitter is realized by using a distributed feedback(DFB) laser. Temperature of the laser is thermoelectrically stabilized and the output optical power is also stabilized by using negative feedback. The output power of the transmitter is 0 dBm. The optical receiver consists of an InGaAs avalanche photodiode, a preamplifier. an automatic gain control amplifier, and a clock/data regenerator. We find an optimum decision threshold that gives the best receiver sensitivity form the measured V curve. The best sensitivity is -35.5dBm( BER-1*10S010T, PRBS=2S023T -1 ) and the overload power is -9 dBm. Finally, we achieve error free optical transmission with 98 km optical fibers. The exinction ration penalty of 2 dB. the chromatic dispersion penalty of 1 dB, and the total power penalty of 3.0 dB are measured. These results satisfy CCITT recommendation.

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Analysis of Soil Ionization Behaviors under Impulse Currents

  • Lee, Bok-Hee;Park, Geon-Hun;Kim, Hoe-Gu;Lee, Kyu-Sun
    • Journal of Electrical Engineering and Technology
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    • 제4권1호
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    • pp.98-105
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    • 2009
  • This paper presents the characteristics of soil ionization for different water contents, and the parameters associated with the dynamic properties of a simple model grounding system subject to lightning impulse currents. The laboratory experiments for this study were carried out based on factors affecting the soil resistivities. The soil resistivities are adjusted with water contents in the range from 2 to 8% by weight. A test cell with a spherical electrode buried in the middle of the hemispherical container was used. As a result, the electric field intensity $E_c$ initiating ionization is decreased with the reduction of soil resistivities. Also, as the water content increased, the pre-ionization resistance $R_1$ and the post-ionization resistance $R_2$ became lower with increasing current amplitude. The time-lag to ionization $t_1$ and the time-lag to the second current peak $t_2$ at high applied voltages were significantly shorter than those of low applied voltages. It was found that the soil ionization behaviors are highly dependent on the water content and the applied voltage amplitude.

태양전지 가상 구현 모듈의 직$\cdot$병렬 특성 해석 및 제어 (Analysis and Control of Series$\cdot$Shunt Characteristics for Virtual Implementation of Solar Cell Module)

  • 한정만;류태규;유재현;고재석;최규하
    • 전력전자학회:학술대회논문집
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    • 전력전자학회 2001년도 전력전자학술대회 논문집
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    • pp.72-75
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    • 2001
  • The solar energy is purity and infinity. Solar power converter were used to convert the electrical energy from the solar arrays to a stable and reliable power source. So much country research this solar energy system. The photovoltaic system is construct many solar cell array, In this paper, new implementation solar system was showed buck converter that V-I curve produced. This system can be used to study the short-term and long-term performances of solar cell and efficiency. This system is a far more cost effective and reliable replacement for field and outdoor flight testing. Study of buck converter, analysis and control shun t$\cdot$series connection characteristics of solar cell array.

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Hot wall epitaxy법에 의한 MgGa2Se4 단결정 박막 성장과 광학적 특성 (Growth and optical properties for MgGa2Se4 single crystal thin film by hot wall epitaxy)

  • 문종대;홍광준
    • 한국결정성장학회지
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    • 제21권3호
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    • pp.99-104
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    • 2011
  • 단결정 성장을 위한 $MgGa_2Se_4$ 다결정은 수평 전기로에서 합성하였으며, 결정구조는 rhombohedral이고 격자상수 $a_0$는 3.953 ${\AA}$, $c_0$는 38.890 ${\AA}$였다. $MgGa_2Se_4$ 단결정박막은 HWE(Hot Wall Epitaxy) 방법으로 반절연성 GaAs(100)기판에 성장시켰다. 단결정박막의 성장 조건은 증발원의 온도 $610^{\circ}C$, 기판의 온도 $400^{\circ}C$에서 진행되었으며 성장 속도는 0.5 ${\mu}m/h$였다. 단결정박막의 결정성은 이중 결정 x-선 회절곡선의 반폭치와 X-선 회절무늬의 ${\omega}-2{\theta}$로부터 구하여 최적 성장 조건을 알 수 있었다. Hall 효과는 van der Pauw 방법에 의해 측정되었으며, 온도에 의존하는 운반자 농도와 이동도는 293 K에서 각각 $6.21{\times}10^{18}/cm^3$, 248 $cm^2/v{\cdot}s$였다. $MgGa_2Se_4$/SI(Semi-Insulated) GaAs(100) 단결정 박막의 광흡수 스펙트럼을 10 K에서 293 K까지 측정하였다. 광흡수 스펙트럼으로부터 구한 에너지 갭 $E_g(T)$는 varshni 공식 $E_g(T)=E_g(0)=({\alpha}T^2/T+{\beta})$을 잘 만족함을 알 수 있었다. 여기서 $E_g(0)=2.34\;eV$, ${\alpha}=8.81{\times}10^{-4}\;eV/K$, ${\beta}=251\;K$였다.