• Title/Summary/Keyword: V-t characteristics

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V-t Characteristics and 50% Flash-over Voltage of $SF_{6}-N_{2}$ Mixtures for Lightening Impulse Voltage ($SF_{6}-N_{2}$ 혼합가스에서 뇌충격전압에 의한 50[50%] Flash over 전압 및 V-t 특성)

  • 김정달;송원표;김동의
    • The Proceedings of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.7 no.1
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    • pp.21-29
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    • 1993
  • In this paper, we studied the 50% flashover voltage of lightening impulse which affect the most serious damages on the insulation of the electric power network system. Also its V -t characteristics and corona process phenomena of pure $SF_6, N_2, SF_6-N_2$mixtures under the circumstances of nonuniform field gap are researched. Comparing the characteristics of pure $SF_6$ with that of $SF_6, N_2$mixtures, we discussed that breakdown processes and $SF_6, N_2$ mixture's application to economics.As a results, 50% flashover voltage of $SF_6$ 50% - $N_2$ 50% for impulse voltage is higher then that of 80% of pure SF6, measured data and calculated data by equal area law are almost equal from the points of view of V-t characteristics. Therefore, it has been known that $SF_6$ 50% - $N_2$ 50% mixtures can be used as an economic constitution gas of pure $SF_6$, it is verified that corona processes from Lichtenberg figure.

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A Study on the Fabrication of CsI(T1) Radiation Sensor and its Spectroscopic Characteristics (CsI(T1) 방사선센서의 제작 및 분광특성 연구)

  • 권수일;신동호
    • Progress in Medical Physics
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    • v.13 no.1
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    • pp.44-50
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    • 2002
  • CsI(T1) single crystal was grown in a Bridgman growing apparatus, which has the diameter of 11 mm and the mole ratio of 0.001 mol%. Radiation sensors were made with CsITl)crystal and two photodiodes, and measured spectroscopic characteristics and linearity for gamma-ray and X-ray. The energy resolution of CsI(T1) radiation sensor has been measured with $^{22}$ Na, $^{137}$ Cs and $^{60}$ Co gamma standard sources. Also output linearity of CsITl) sensor was measured for diagnostic radiation region. The energy resolutions of CsI(T1) radiation sensor for 0.511MeV gamma-ray from Na-22 source, 0.662MeV from Cs-137 source, and 1.17MeV and 1.332MeV from Co-60 source were 13.2%, 8.3%, 6.7%, and 5.1% respectively. Also the output linearity up to 80mAs current for 60kVp, 80kvp, 100kVp, 120kVp tube voltages has been studied.

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Consonantal Production and V-to-V Coarticulation in Korean VCV Sequences (모음-자음-모음 연결에서 자음의 조음특성과 모음-모음 동시조음)

  • Shin, Ji-Young
    • Speech Sciences
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    • v.1
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    • pp.55-81
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    • 1997
  • In the present paper, V-to-V coarticulation in Korean VCV sequences is discussed, focusing on links between consonantal production and degree of V-to-V coarticulation. Temporal and spatial differences between three types of Korean alveolar stops (lax /t/. aspirated /$t^h$/ and thense /t'/) are examined from VCV sequences involving all possible combinations of three Korean unrounded vowels /a, i,/ based on spectrographic and electrographic data(two male speakers and one female speaker and one female speaker respectively). Closure duration and voice onset time (VOT) were measured from acoustic data. 'Total duration', which is defined as the sum of the closure duration and the VOT, was also calculated in order to see the temporal distance between two vowels in a VCV sequence. Differences in lingual-palatal contact pattern at the maximum contact (MC) point between the three types of stop were observed from EPG data. V-to-V coarticulation was investigated by measuring the offset or onset of the second formant (F2) of the target vowels from spectrograms. Two different dimensions of articulation, temporal and spatial, seem to playa role in determining the degree of V-to-V coarticulation. The degree of V-to-V anticipatory coarticulation is influenced by the spatial characteristics of the intervening consonant while the degree of carryover coarticulation is influenced by the temporal characteristics of the consonant.

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A Study on Dynamic Characteristics of a Refrigeration System by Controlling the Evaporator Superheat (증발기 과열도제어에 따른 냉동장치의 동특성에 관한 연구)

  • 김재돌;오후규;윤정인
    • Transactions of the Korean Society of Mechanical Engineers
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    • v.19 no.8
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    • pp.2012-2021
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    • 1995
  • An experimental study was performed for the analysis of dynamic characteristics of refrigeration system by controlling the evaporator superheat. Experimental data have been taken utilizing two different devices, thermostatic expansion valve(T.E.V.) and electronic expansion valve(E.E.V.), for the control of the evaporator superheat. The ranges of parameters, such as superheat, mass flow rate of refrigerant and inlet temperature of evaporator were 5-30.deg. C 90-170 kg/h and 10-25.deg. C, respectively. The data taken from the T.E.v.and E.E.v.were discussed with the control of the superheat, pressure drop, refrigerating capacity, compression work, evaporating temperature, condensing temperature and COP affecting performance characteristics of refrigeration system. In case of the refrigerant flow control with T.E..V., the superheat and pressure drop of the evaporator varied periodically, but the control with E.E.V., the parameters were very stable. In E.E.v.control, refrigerating capacity, compression work and evaporating temperature were decreased with increasing superheat, and the highest COP was obtained in the range of superheat from 5.deg. C to 15.deg. C.

V-t characteristics of turn insulator of HTS transformer (초전도변압기 턴간 절연재료의 V-t 특성)

  • 정종만;류엔반둥;백승명;이창화;김상현
    • Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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    • 2003.10a
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    • pp.218-221
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    • 2003
  • In the response to increasing the demands for electrical energy, much effort aimed to develop and commercialize HTS power equipments have been made around the world. Among them HTS transformer is one of very Promising one. For the development, the cryogenic insulation technology should be established. In this paper V-t characteristics of turn insulator, Kpaton, among insulation components of HTS transformer was discussed with Weibull distribution and n-value. V-t tests of Kapton were conducted using Cu tape electrodes shaped HTS tape depending on wrapping number. The n-values of 2 and 3 times wrapped tape are 27.54 and 30.58. Although breakdown strength of the 3 times one is higher than the 2 times the 3 times one have more weak points with overlapping so it have higher probability of incidental accidents.

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Study on Discharge Characteristics Using $V_t$ Close-Curve Analysis in ac PDPs

  • Cho, Byung-Gwon;Tae, Heung-Sik
    • 한국정보디스플레이학회:학술대회논문집
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    • 2007.08b
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    • pp.1185-1188
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    • 2007
  • The address discharge characteristics by the various scan-low and common-bias voltages are investigated based on measured address discharge time lags and $V_t$ close-curve analysis. The scan-low voltages are changed under the same voltage difference between the X and Y electrodes during an address period. As the voltage difference between the scan and address electrodes is increased during an address period, the address discharge time lag is shortened but the background luminance is increased. It is found that the improved address discharge characteristics is caused by the effect of the higher external applied voltage during an address period than the accumulated wall charges during a reset period and the high background luminance can be prevented by applying an address-bias voltage during a rising-ramp period and low reset voltage.

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Analysis of a Parasitic-Diode-Triggered Electrostatic Discharge Protection Circuit for 12 V Applications

  • Song, Bo Bae;Lee, Byung Seok;Yang, Yil Suk;Koo, Yong-Seo
    • ETRI Journal
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    • v.39 no.5
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    • pp.746-755
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    • 2017
  • In this paper, an electrostatic discharge (ESD) protection circuit is designed for use as a 12 V power clamp by using a parasitic-diode-triggered silicon controlled rectifier. The breakdown voltage and trigger voltage ($V_t$) of the proposed ESD protection circuit are improved by varying the length between the n-well and the p-well, and by adding $n^+/p^+$ floating regions. Moreover, the holding voltage ($V_h$) is improved by using segmented technology. The proposed circuit was fabricated using a $0.18-{\mu}m$ bipolar-CMOS-DMOS process with a width of $100{\mu}m$. The electrical characteristics and robustness of the proposed ESD circuit were analyzed using transmission line pulse measurements and an ESD pulse generator. The electrical characteristics of the proposed circuit were also analyzed at high temperature (300 K to 500 K) to verify thermal performance. After optimization, the $V_t$ of the proposed circuit increased from 14 V to 27.8 V, and $V_h$ increased from 5.3 V to 13.6 V. The proposed circuit exhibited good robustness characteristics, enduring human-body-model surges at 7.4 kV and machine-model surges at 450 V.

The Evaluation and Countermeasures for the 2nd Arc Reduction for the High Speed Reclosing in 765kV Transmission Line (765kV 계통의 고속도 다상 재폐로 관련 2차 아크 검토 및 억제 방안)

  • Ahn, J.S.;Kim, J.Y.;Jin, J.Y.
    • Proceedings of the KIEE Conference
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    • 1995.07b
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    • pp.613-615
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    • 1995
  • KEPCO is now going on upgrading the highest system voltage from 345kV to 765kV since 1992. The main reason of this 765kV project is the bulk power transmission from the power generation sites at the East and West coasts to the Kyeong-in area. The first 765kV transmission lines will be constructed by 1998 and operated as 345kV level until 2001. This system needs a detailed evaluation of the 2nd arc in case of 765kV transmission line outages and the countermeasures for the fast arc reduction for the successful high speed reclosing. So, this paper deals with the simulation results of the 2nd arc characteristics using EMTP and comparison of Sh.R and HSGS for the reduction methods.

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A Study on Electro-Optical Characteristics of the Ion Beam Aligned FFS Cell on the Inorganic Thin Film (무기 박막을 이용한 이온빔 배향 FFS 셀의 전기광학특성에 관한 연구)

  • Hwang, Jeoung-Yeon;Park, Chang-Joon;Jeong, Youn-Hak;Ahn, Han-Jin;Baik, Hong-Koo;Seo, Dae-Shik
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.05a
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    • pp.94-97
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    • 2004
  • In this paper, we investigate fringe-field switching (FFS) mode cell by the ion beam (IB) alignment method on the a-C:H thin film, to analyze electro-optical characteristics in this cell. We studied on the suitable inorganic thin film for fringe-field switching (FFS) cell and the aligning capabilities of nematic liquid crystal (NLC) using the new alignment material of a-C:H thin film An excellent voltage-transmittance (V-T) and response time curve of the IB-aligned FFS-LCD was observed with oblique IB exposure on the DLC thin films. Also, AC V-T hysteresis characteristics of the IB-aligned FFS-LCD with IB exposure on the DLC thin films is almost the same as that of the rubbing-aligned FFS cell on a polyimide (PI) surface.

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Dielectric Characteristics of Gaseous $SF_6$ for Impulse Voltages in Presence of a Metallic Particle in GIS (가스절연개폐장치에 있어서 금속입자 존재시 임펄스전압에 대한 $SF_6$가스의 절연특성)

  • 이복희;이경옥;이창준
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.14 no.1
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    • pp.22-29
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    • 2000
  • This paper deals with the dielectric characteristics of $SF_6$ gas gap stressed by $\pm$1.2/44[$mutextrm{s}$] non-oscillating impulse and $\pm$0.4[$mutextrm{s}$]/1.14[MHz] oscillating impulse voltages in the presence of a needle-shape metallic particle in gas-insulated switchgear(GIS). Breakdown voltage-time (V-t) and breakdown voltage-gas pressure (V-p) characteristics were investigated and discussed. The experiments were carried out under highly inhomogeneous field geometry with a needle protrusion whose length and radius are 10[mm] and 0.5[mm], respectively. The gas pressure ranges from 0.1 to 0.5[㎫]. As a result, it was found that the electrical breakdown for both the positive and negative polarity develops with steplike pulses in leader mechanism, When subjected to the positive oscillating impulse voltage, the minimum breakdown voltages appeared in all the gas pressure ranges and the V-t curves have a pronounced upturning at short times to breakdown and give a little dependence of the gas pressure. On the other hand, in the case of the negative polarity the dependence of the V-t and V-p characteristics on the wave shape of the applied voltages is known to be appreciable.

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