• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.7
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• pp.607-611
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• 2000

The characteristics on the interface between Epoxy and EPDM which are materials of the underground insulation systems of power delivery have studied. The breakdown strength of specimens are observed by applying high AC voltage at the room temperature. The breakdown times under the constant voltage below the breakdown voltage were gained. As constant voltage is applied the breakdown time is proportion to the breakdown strength. The life exponent n is gained by inverse power law and the long breakdown life time can be evaluated. AC breakdown strength and life time is improved by oiling to the interface. When the low viscosity oil is spread interface has the highest life time.

• Journal of IKEEE
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• v.25 no.2
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• pp.350-355
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• 2021

IGBT is a power semiconductor device that contains both MOSFET and BJT structures, and it has fast switching speed of MOSFET, high breakdown voltage and high current of BJT characteristics. IGBT is a device that targets the requirements of an ideal power semiconductor device with high breakdown voltage, low V_CE-SAT, fast switching speed and high reliability. In this paper, we analyzed Gate oxide thickness, Trench Gate Width, and P+Emitter width, which are the top process parameters of 1,200V Trench Gate Field Stop IGBT, and suggested the optimized top process parameters. Using the Synopsys T-CAD Simulator, we designed IGBT devices with electrical characteristics that has breakdown voltage of 1,470 V, V_CE-SAT 2.17 V, Eon 0.361 mJ and Eoff 1.152 mJ.

• KOREAN JOURNAL OF CROP SCIENCE
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• v.22 no.1
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• pp.41-44
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• 1977

Production of haploids in vitro anther culture of Nicotiana tabacum L. was oriented in a large number on a chemically defined culture medium. The haploids were screened for T.M.V. resistance and the segregating ratio in F$_1$ were in good agreement with the expected ratio.

• Journal of the Korean Institute of Telematics and Electronics T
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• v.36T no.3
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• pp.1-6
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• 1999

The preparation and electrical or optical characteristics of blue-green emitting powder type electroluminescent device(P-ELD) are described. In V-I and Y-L characteristics, current and luminance are increased with increasing frequency and voltage. Luminance was shown 840 cd/$\textrm{m}^2$ at operating condition of 20 kHz, 150 V It can be explained by eqivalent circuit of P-ELD.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.63-63
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• 2009

In this work, we demonstrate 800V 4H-SiC power DMOSFETs with several structural alterations to observe static DC characteristics, such as a threshold voltage ($V_{TH}$) and a figure of merit ($V_B^2/R_{SP,ON}$). To optimize the static DC characteristics, we consider four design parameters; (a) the doping concentration ($N_{CSL}$) of current spreading layer (CSL) beneath the p-base region, (b) the thickness of p-base ($t_{BASE}$), (c) the doping concentration ($N_J$) and width ($W_J$) of a JFET region, (d) the doping concentration ($N_{EPI}$) and thickness ($t_{EPI}$) of epi-layer. Design parameters are optimized using 2D numerical simulations and the 4H-SiC DMOSFET structure results in high figure of merit ($V_B^2/R_{SP,ON}$>~$340MW/cm^2$) for a power MOSFET in $V_B{\sim}1200V$ range.

• Journal of the Korean Society for Heat Treatment
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• v.31 no.2
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• pp.49-55
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• 2018

A T-shape structure was manufactured by the superplastic forming and diffusion bonding process using two Ti-3Al-2.5V alloy tubes. A Ti-3Al-2.5V tube was prepared for the hydroforming in the superplastic condition until it reaches a surface area such as a roof welded in the hole of another Ti-3Al-2.5V tube. Afterward, the superplastic forming process and the diffusion bonding process were carried out simultaneously until the appropriate bonding along the interface area of two Ti-3Al-2.5V tubes was obtained. The bonding qualities were different at each location of the entire interface according to the applied process conditions such as strain, pressure, temperature, holding time, geometries, etc. The microstructures of bonding interface have been observed to understand the characteristics of the applied processes in this study.

• Asian-Australasian Journal of Animal Sciences
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• v.32 no.10
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• pp.1603-1610
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• 2019

Objective: The purpose of this study was to investigate the effect of fermented spinach derived nitrite and sodium nitrite on cured pork loin. Methods: The following treatments were prepared using brine (8% [w/v] salt): Control (-), no nitrite added; Control (+), 0.08% (w/v) sodium nitrite brine; T1, 0.04% (w/v) nitrite fermented spinach juice in 0.04% (w/v) sodium nitrite brine; T2, spinach juice in 0.04% (w/v) sodium nitrite brine; T3, 0.04% (w/v) nitrite fermented spinach juice used as sodium nitrite free brine; and T4, spinach juice used as sodium nitrite free brine. T2 and T4 were incubated to allow to reduce nitrate to nitrite. Results: Spinach juice did not affect cooking loss and pH but negatively influenced flavor and overall acceptability (p<0.05). T1 samples containing synthetic and natural nitrites showed the highest redness values. Spinach juice negatively affected volatile basic nitrogen; however, thiobarbituric acid reactive substance values of T1 and T3 were similar to those of controls (+) (p>0.05). Residual nitrite content decreased with decreasing synthetic nitrite levels. T1 and control samples showed no significant differences in overall acceptability (p>0.05). Conclusion: Thus, combined synthetic and natural nitrites improved the quality of cured pork loin.

• Journal of the Korean Society of Marine Environment & Safety
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• v.21 no.6
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• pp.778-783
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• 2015

We studied about the strength characteristics of the FRP bonding method due to reduce accident on the oceans and protect life for my people. We test tension and bending strength of butt joint, lap joint, V-scarf joint, X-scarf joint. The result of test, it's pattern is similar both tension and bending strength. Tension strength and bending strength was excellent in order to X-scarf-butt joint-V-scarf-lap joint. The tension strength is the best properties X-scarf showed a 57% strength rate of the basic material, and bending strength showed a 77% strength rate of the basic material. Overall, the X-scarf 12t joint has most excellent properties of tension and bending strength. The lap joint has worst properties of tension and bending strength. We have to test having different over-lay of V-scarf and X-scarf joint each 12t, 16t, 20t. V-scarf of 20t over-lay has excellent character of tension and bending strength. But X-scarf of 12t over-lay has excellent character of tension and bending strength. The results are shown to the contrary. The ship is received a lot of stress. it's hard to compare a direction both actual and test. But we can acknowledge material basic characteristic of strength through tension and bending test. We give the four repair method; butt joint, lap joint, V-scarf joint, X-scarf joint and the reduced ratio in comparison with basic material; In addition give the separated data for V-scarf and X-scarf characteristic of 12t, 16t, 20t overlay length. For our study repair man can select good repair method in his work station.

• Electrical & Electronic Materials
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• v.4 no.3
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• pp.259-266
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• 1991

1.5.mu.m의 찬넬길이를 갖는 short channel 비휘발성 SNOSFET 기억소자를 기존의 CMOS 1 Mbit 공정기술을 이용하여 제작하고 I$_{d}$-V$_{d}$ 및 I$_{d}$- V$_{g}$특성과 스윗칭 및 기억유지특성을 조사하였다. 그 결과 제작한 소자는 논리회로 설계에 적절한 전도특성을 가졌으며 스윗칭시간은 인가전압의 크기에 의존함을 보였다. 그리고 3V의 memory window 크기를 얻기 위해서 V$_{w}$ =+34V, t$_{w}$ =50.mu.sec 및 V$_{e}$=-34V, t$_{e}$=500.mu.sec의 펄스전압으로 각각 write-in과 erase할 수 있었다. 또한 기억상태는 10년이상 유지할 수 있음을 알 수 있었다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.126-130
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• 1995

$CdS_{1-x}Te_{1-x}$ polycrystalline thin films were fabricated from CdS and CdTe powder by co-evaporation method at $10^{-6}$ Torr. The Optimum evaporation condition was substrate temperature $T_{s}$=$150^{\circ}C$, evaporation time t=30 min. XRD spectrums indicated that the crystal structure chanced from zinc blonde (x$\leq$0.22) to wurtzite (x$\geq$0.96) through mixed structure (0.22$\leq$0.74) as composition value x increase to CdS. Conductive type was n-type by hot point probe method. van der Pauw method was not applicable for x<0,5 due to high hall voltages, Electrical resistivity and Hall carrier mobility were decreased as x increase, while Hall carrier concentration was increased. The optical bandgap of $CdS_{1-x}Te_{1-x}$ polycrystalline thin films measure d at R.T. had quardratic form and the bowing parameter was fitted as 1.98eV for theoretical value of 2.0eV. I-V characteristics of In/CdTe/$CdS_{x}Te_{1-x}$Au Schottky diodes showed that CdS-rich one had better forward characteristics than CdTe-rich one.