• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.95-95
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• 2008

본 연구에서는 SiGe p-MOSFET을 제작하여 I-V 특성과 게이트 길이, $V_D$, $V_G$의 변화에 따른 저주파 노이즈특성을 측정하였다. Si 기판위에 성장한 $Si_{0.88}Ge_{0.12}$으로 제작된 SiGe p-MOSFET의 채널은 게이트 산화막과 20nm 정도의 Si Spacer 층으로 분리되어 있다. 게이트 산화막은 열산화에 의해 70$\AA$으로 성장되었고, 게이트 폭은 $25{\mu}m$, 게이트와 소스/드레인 사이의 거리는 2.5때로 제작되었다. 제작된 SiGe p-MOSFET은 빠른 동작 특성, 선형성, 저주파 노이즈 특성이 우수하였다. 제작된 SiGe p-MOSFET의 ESD 에 대한 소자의 신뢰성과 내성을 연구하기 위하여 SiGe P-MOSFET에 ESD를 lkV에서 8kV까지 lkV 간격으로 가한 후, SiGe P-MOSFET의 I-V 특성과 게이트 길이, $V_D$, $V_G$의 변화에 따른 저주파 노이즈특성 변화를 분석 비교하였다.

• Speech Sciences
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• v.1
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• pp.55-81
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• 1997

In the present paper, V-to-V coarticulation in Korean VCV sequences is discussed, focusing on links between consonantal production and degree of V-to-V coarticulation. Temporal and spatial differences between three types of Korean alveolar stops (lax /t/. aspirated /$t^h$/ and thense /t'/) are examined from VCV sequences involving all possible combinations of three Korean unrounded vowels /a, i,/ based on spectrographic and electrographic data(two male speakers and one female speaker and one female speaker respectively). Closure duration and voice onset time (VOT) were measured from acoustic data. 'Total duration', which is defined as the sum of the closure duration and the VOT, was also calculated in order to see the temporal distance between two vowels in a VCV sequence. Differences in lingual-palatal contact pattern at the maximum contact (MC) point between the three types of stop were observed from EPG data. V-to-V coarticulation was investigated by measuring the offset or onset of the second formant (F2) of the target vowels from spectrograms. Two different dimensions of articulation, temporal and spatial, seem to playa role in determining the degree of V-to-V coarticulation. The degree of V-to-V anticipatory coarticulation is influenced by the spatial characteristics of the intervening consonant while the degree of carryover coarticulation is influenced by the temporal characteristics of the consonant.

• The Transactions of the Korean Institute of Power Electronics
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• v.10 no.6
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• pp.560-568
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• 2005

The proposed Multi-level PDP sustain Driver is composed of the semiconductor devices with low voltage rating compared to those used in the prior circuit proposed by L. Wether, and it has two resonant periods during the charging (rising period) and discharging (falling period) the PDP in the sustaining voltage waveforms. In accordance with the change of timing phase$(T_{r1},\;T_{i1},\;T_{r2})$, the performance characteristics of a commercial PDP module has been carried out and compared the characteristic with the 42V6, made of LG Electronics co., Experimental results show that the performance characteristics of PDP module are greatly influenced by the variation of $T_{i1}\;and\;T_{r2}$. The variation of $T_{r1}$ do not influence much on the performances of PDP. With the conditions that $T_{r1}=60ns,\;T_{i1}=120ns,\;and\;T_{r2}=350ns$, we could get the performances listed as the luminance is increased $14.6\%$, the power consumptions is decreased $5.9\%$, the panel efficiency is increased $24.2\%$, module efficiency is increased $21.2\%$, compared to those shown in the commercial PDP module (42V6). Therefore, the proposed multi-level PDP sustain driver expected to be suitable to actual PDP module application.

• Journal of IKEEE
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• v.25 no.2
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• pp.350-355
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• 2021

IGBT is a power semiconductor device that contains both MOSFET and BJT structures, and it has fast switching speed of MOSFET, high breakdown voltage and high current of BJT characteristics. IGBT is a device that targets the requirements of an ideal power semiconductor device with high breakdown voltage, low V_CE-SAT, fast switching speed and high reliability. In this paper, we analyzed Gate oxide thickness, Trench Gate Width, and P+Emitter width, which are the top process parameters of 1,200V Trench Gate Field Stop IGBT, and suggested the optimized top process parameters. Using the Synopsys T-CAD Simulator, we designed IGBT devices with electrical characteristics that has breakdown voltage of 1,470 V, V_CE-SAT 2.17 V, Eon 0.361 mJ and Eoff 1.152 mJ.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.439-442
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• 2002

The interface between two different materials in the insulation systems is the weak-link in the underground power transmission systems, In this paper, Optimum conditions of the interface between Epoxy and EPDM is studied. The variation factor condition of interface is roughness of surface, spreading of oils, interfacial pressure and temperature. The breakdown times under the constant voltage below the breakdown voltage were also gained. The breakdown voltage at the after laying time equivalent to is calculated by the V-t characteristic and the inverse power law. When this is done, the characteristic life exponent n is used and the long time breakdown voltage can be evaluated.

• Proceedings of the Korea Institute of Applied Superconductivity and Cryogenics Conference
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• 2003.10a
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• pp.218-221
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• 2003

In the response to increasing the demands for electrical energy, much effort aimed to develop and commercialize HTS power equipments have been made around the world. Among them HTS transformer is one of very Promising one. For the development, the cryogenic insulation technology should be established. In this paper V-t characteristics of turn insulator, Kpaton, among insulation components of HTS transformer was discussed with Weibull distribution and n-value. V-t tests of Kapton were conducted using Cu tape electrodes shaped HTS tape depending on wrapping number. The n-values of 2 and 3 times wrapped tape are 27.54 and 30.58. Although breakdown strength of the 3 times one is higher than the 2 times the 3 times one have more weak points with overlapping so it have higher probability of incidental accidents.

• KOREAN JOURNAL OF CROP SCIENCE
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• v.22 no.1
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• pp.41-44
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• 1977

Production of haploids in vitro anther culture of Nicotiana tabacum L. was oriented in a large number on a chemically defined culture medium. The haploids were screened for T.M.V. resistance and the segregating ratio in F$_1$ were in good agreement with the expected ratio.

• Journal of The Korean Society of Grassland and Forage Science
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• v.24 no.2
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• pp.155-162
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• 2004

Different adhesives(CF-clear, arabic gum, cethylmethyl cellulose, polyvinyl alcohol, polyvinyl pyrrolidone, hydroxy propyl cellulose, methyl cellulose) and particulate matters(bentonite, kaolin, calcium carbonate, peatmoss, talcum, vermiculite, zeolite, calcium hydroxide, plaster, calcium phosphate, vermiculite + calcium carbonate, vermiculite + kaolin, vermiculite + talcum) were evaluated by coating index method. According to the weight of single coated seeds, CF-clear and polyvinyl alcohol appeared to be the best coating adhesives for red clover and tall fescue seeds. Both vermiculite and vermiculite + talc(l : 1) for red clover, and vermiculite + talc(l : 1) for tall fescue appeared to be the best particulate matter(P < 0.01). Percent friability showed excellent results for the arabic gum, CF-clear, and polyvinyl alcohol when compared to others(p < 0.01). The coating index showed high with vermiculite and vermiculite + talc(l : 1) in coating red clover seed, and talc, vermiculite, and vermiculite + talc showed good coating index in coating tall fescue seed.

• Journal of the Korean Institute of Telematics and Electronics T
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• v.36T no.3
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• pp.1-6
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• 1999

The preparation and electrical or optical characteristics of blue-green emitting powder type electroluminescent device(P-ELD) are described. In V-I and Y-L characteristics, current and luminance are increased with increasing frequency and voltage. Luminance was shown 840 cd/$\textrm{m}^2$ at operating condition of 20 kHz, 150 V It can be explained by eqivalent circuit of P-ELD.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.1 no.3
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• pp.9-16
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• 2008

We centrally study effect of very high voltage 345kV T/L which is set up at residential area (Yangyang~Donghae in Gangwon-do) to broadcasting radio wave and human body. First, to compare predicted result of radio wave disturbance, we set 7 area 13 point and divide broadcasting quality, electric and magnetic fields in T/L process. Result of estimation, we confirm that when receiving broadcasting radio wave, broadcasting quality's difference is generated by topographic property of near receiving point. also through result of electric fields and broadcasting quality and their comparison, we judge that high voltage T/L is barely affect receive of broadcasting radio wave. To judge effect of magnetic fields to human body, we analyze magnetic fields in variable area and condition. as a result, magnetic fields of every area has 1.8mG(WHO international standard amount is 833mG). So It is proved that magnetic fields of 345kV Yangyang~Donghae area has slight, tiny effect to human body.