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Development of a Controller for Variable-rate Application of Granular Fertilizer (입제 비료의 변량 살포를 위한 제어기 개발)

  • Yu J.H.;Kim Y.J.;Ryu K.H.
    • Journal of Biosystems Engineering
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    • v.31 no.2 s.115
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    • pp.108-114
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    • 2006
  • This study was conducted to design and fabricate a controller for variable-rate application of granular fertilizer based on physical and chemical information, to analyze the performance of the controller and characteristics of a discharger. The result of the study are summarized as follows: 1. The charge ratios of discharger by accumulation heights of fertilizer in hopper were examined, and the variations in charge ratio were $72.58{\sim}93.33%$ and $63.14{\sim}94.42%$ for the fertilizers Super 21 and Sinsedae, respectively. The charge ratio also decreased as the rotational speed of discharger increased. 2. The coefficient of variation of discharge amount by rotational speed and discharge time of discharger were in the range of $2.94{\sim}11.23%$ and $2.82{\sim}10.80%$ for the fertilizer of Super 21 and Sinsedae. Except the rotational speed of 12 rpm, the coefficient of variation for discharge amount were relatively small with 4% more or less 3. In order to evaluate the rotational speed of discharger, the control signal in the range of $0{\sim}5V$ was subdivided into the 50 steps by 0.1V. The regression equation for the rotational speed of discharger was Y=55.984X-79.174(X: input voltage, V, Y: discharger speed, RPM) and the $R^2$ was 0.99. 4. In order to evaluate the performance of the controller for variable-rate application of granular fertilizer, settling time to unit step input was examined. The settling time varied from 0.8sec to 1.4 sec.

PL Property of Al-N Codoped p-type ZnO Thin Films Fabricated by DC Magnetron Sputtering

  • Liu, Yan-Yan;Jin, Hu-Jie;Park, Choon-Bae;Hoang, Geun-C.
    • Transactions on Electrical and Electronic Materials
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    • v.10 no.3
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    • pp.89-92
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    • 2009
  • High-quality Al-N doped p-type ZnO thin films were deposited on Si and buffer layer/Si by DC magnetron sputtering in a mixture of $N_2$ and $O_2$ gas. The target was ceramic ZnO mixed with $Al_2O_3$ (2 wt%). The p-type ZnO thin films showed a carrier concentration in the range of $1.5{\times}10^{15}{\sim}2.93{\times}10^{17}\;cm^{-3}$, resistivity in the range of 131.2${\sim}$2.864 ${\Omega}cm$, mobility in the range of 3.99${\sim}$31.6 $cm^2V^{-1}s^{-l}$, respectively. It was easier to dope p-type ZnO films on Si substrates than on buffer layer/Si. The film grown on Si showed the highest quality of photoluminescence (PL) characteristics. The Al donor energy level depth $(E_d)$ of Al-N codoped ZnO films was reduced to about 50 meV, and the N acceptor energy level depth $(E_a)$ was reduced to 63 meV.

Micro power of piezo cantilever With PZT thick films (PZT 후박을 적용한 piezo-cantilever 마이크로 발전 특성)

  • Kim, I.S.;Jeong, S.J.;Kim, M.S.;Song, J.S.;Lee, D.S.;Jeon, S.H.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.11a
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    • pp.296-297
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    • 2007
  • PMN-PZT 단층 및 다층 후막을 알루미나 기판위에 켄티레버 형태로 제작하여, 외부의 미소 진동에 의한 마이크로 발전 특성을 고찰하였다. 미소 변위에 의한 마이크로 발전 특성은 켄티레버의 무게(load), 진동수, 켄티레버의 길이 등에 밀접한 영향을 미치므로 이에 준한 요소를 고려하여 여러 가지 변수로 실험하였다. 연구 결과 서로 다른 소재의 기판과 발전체의 계면 분리 현상, 전극과 발전체의 분리 현상, 소결 온도 등이 소재 측면의 문제점으로 크게 대두되었으며, $5{\times}20mm$ 기판위에 형성된 발전체의 특성은 $1.1k{\Omega}{\sim}1M{\Omega}$의 부하에 따른 전압변동이 0.01V에서 3.6V로 큰 차이가 났다. 켄티레버의 로드의 변화에 대한 피크 전압은 $1.9{\sim}{\pm}2.8V$로 조사되었으며, 출력은 $0.45{\sim}4{\mu}W$로 측정되었다. 그러나 이런 외부 조건 보다 압전체의 공진 특성과 진동수는 가장 중요한 요인으로 나타났으며, 몇몇 문제가 해결될 경우 마이크로 발전소자로의 활용 가능성이 있는 것으로 조사되었다.

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CMOS Voltage down converter using the self temperature-compensation techniques (자동 온도 보상 기법을 이용한 CMOS 내부 전원 전압 발생기)

  • Son, Jong-Pil;Kim, Soo-Won
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.43 no.12 s.354
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    • pp.1-7
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    • 2006
  • An on chip voltage down converter (VDC) using the self temperature-compensation techniques is proposed. At a different gate bias voltage, PMOSFET shows different source to drain current characteristic according to the temperature variation. The proposed VDC can reduce its temperature dependency by the source to drain current ratio of two PMOSFET with different gate bias respectively. Proposed circuit is fabricated in Dongbu-anam $0.18{\mu}m$ CMOS process and experimental results show its temperature dependency of $-0.49mV/^{\circ}C$ and external supply dependency of 6mV/V. Total current consumption is only $1.1{\mu}A@2.5V$.

Inhibitory effects of the extract from Quercus dentata gallnut against plant virus infection

  • Kwon, S.B.;Shin, J.E.;Ahn, S.Y.;Yoon, C.S.;Kim, B.S.
    • Korean Journal of Organic Agriculture
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    • v.19 no.spc
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    • pp.271-274
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    • 2011
  • Pepper mild mosaic virus (PMMoV) and cucumber mosaic virus (CMV) are important pathogens in various vegetable crops worldwide. We have found that methanol extracts of Quercus dentate (Oaimyo Oak) gal/nut strongly inhibit PMMoV and CMV infection. Based on this result, the inhibitor named as "KN0912" formulated from the extract of Q. dentate gallnut was tested for its inhibitory effects on PMMoV or CMV infection to each local lesion host plant (Nicotiana glutinosa; PMMoV, Chenopodium amaranticolor; CMV). Pre-treatment effect of KN0912 against infections of each virus to local host plant was measured to be $75.1{\pm}0.5{\sim}97.5{\pm}1.5%$ to PMMoV and $70.6{\pm}2.2{\sim}99.0{\pm}1.0%$ to CMV in 1~10mg/ml conc. and the absorption effect of the antiviral composition of KN0912 to the inside of tobacco leaves tissue, was inhibited by 55.7% to PMMoV and 63.8% to CMV. The persistence of KN0912 treatment was maintained until after the 3 days high inhibitory effect by 98% to PMMoV and by 95.1% to CMV. Inhibitory effects on systemic host plants of KN0912 were measured to be 80~90% to PMMoV and 60~75% to CMV. From the change of morphological characteristics of PMMoV particles under EM, we are tentatively suggested that one mode of action of KN0912 is inactivation due to the destruction of virus particles.

Determination of Quality Correction Factors for a Plane-Parallel Chamber in High Energy Electron Beams using Monte Carlo Calculation (몬테칼로 계산을 이용한 평판형 전리함의 고에너지 전자선에 대한 선질보정인자 결정)

  • Jeong, Dong-Hyeok;Lee, Jeong-Ok
    • Journal of radiological science and technology
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    • v.31 no.1
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    • pp.89-95
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    • 2008
  • The quality correction factor for used beam and qualities is strongly required for clinical dosimetry by TRS-398 protocol of IAEA. In this study the quality correction factors for a commercial plane-parallel ionization chamber in high energy electron beams were calculated by Monte Carlo code(DOSRZnrc/EGSnrc). In comparison of quality correction factor, the difference between this study and TRS-398 were within 1% in 5-20 MeV. In case of 4MeV the difference was 1.9%. As an independent method of determination of quality correction factor this study can be applied to evaluate values in the protocol or calculate the factor for a new chamber.

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Study on Economical M&V Methoodology for the Lighting Control System (조명제어시스템 경제적인 실적확인 기법 연구)

  • Choi, Kyung-Shik;Han, Seung-Ho
    • Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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    • 2009.10a
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    • pp.163-167
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    • 2009
  • Although the domestic electric power consumption of lighting have shared 20${\sim}$30 % of the national electric power consumption, the spread of lighting control system which can reduce the electric power consumption have been insignificant. The government have set the demonstration project and given the incentive to promote the spread of lighting control system since 2008. The M&V (Measurement and Verification) methodology for lighting control system have not been set yet in our country, but the direct measurement was suggested in US. The direct measurement methodology can increase the accuracy of measurement, but it cost much money to burden a customer. This study have suggested a new M&V methodology which cost low and is simple relatively. I had measured the amount of electric consumption through both the direct measurement and the new M&V program computation, and have analyzed the deviation. The amount of electric consumption measured by the new M&V program computation have agreed with one by the direct measurement within the error range of the instrumentation in case of lab scale test, and the 4${\sim}$8 % deviation have existed in case of field evaluation.

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Perfonnance Analysis of the Combined AMC-MIMO Systems with MCS Level Selection Method (MCS 레벨 선택 방식에 따른 AMC-MIMO 결합 시스템의 성능 비교)

  • Hwang In-Tae;Kang Min-Goo
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.31 no.7C
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    • pp.665-671
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    • 2006
  • In this paper, we propose and observe a system that adopts Independent-MCS (Modulation and Coding Scheme) level for each layer in the combined AMC-V-BLAST (Adaptive Modulation and Coding-Vertical-Bell-lab Layered Space-Time) system. Also, comparing with the combined system using Common-MCS level, we observe throughput performance improvement. As a result of simulation, Independent-MCS level case adapts modulation and coding scheme for maximum throughput to each channel condition in separate layer, resulting in improved throughput compared to Common-MCS level case. Especially, the results show that the combined AMC-V-BLAST system with Independent-MCS level achieves a gain of 700kbps in $7dB{\sim}9dB$ SNR (Signal-to-Noise Ratio) range.

OLED 소자의 효율 개선을 위한 소재 및 구조의 변화에 따른 특성 평가

  • Bae, Il-Ji;Hong, Yeong-Gyu;Yun, Dang-Mo;Sin, Jin-Guk
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.227-227
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    • 2014
  • OLED 소자에 사용되는 유기물들은 대부분 전자에 비해 정공의 이동속도가 매우 빨라 소자 효율의 손실이 일어난다. 본 연구에서는 이러한 전하 이동도의 불균형에 의한 OLED 소자 성능의 감소를 개선하기 위해 HBL (hole blocking layer) 물질로 BCP (HOMO : 6.5 eV, LUMO : 2.83 eV)를 도입하였다. 그러나 BCP의 LUMO 값이 약 3 eV를 가지기 때문에 전자의 이동에 영향을 미치는 것으로 예상되어 더 높은 효율을 가지는 소자를 제작하기 위해 host 물질을 상용물질(PGH02)로 교체하였다. PGH02의 HOMO 값은 약 5.86 eV로 소자에 사용된 HTL (hole transport layer)의 HOMO 값(5.54 eV)에 비해 높은 값을 가지기 때문에 HBL의 역할 역시 가능하여 소자의 성능이 상당히 개선되는 것을 확인할 수 있었다. 또한 전하 이동도의 균형을 맞추기 위해 ETL 물질로는 기존에 많이 사용되고 있는 Alq3 (${\mu}{\sim}10-5cm2/Vs$)에 비해 이동도가 10배 이상 빠른 Bebq2 (${\mu}{\sim}10-4cm2/Vs$)를 사용하였다. HTL (hole transport layer) 물질로는 상용물질(LHT 259)를 사용하였고, LHT 259의 전하 이동도는 FET (field effect transistor)를 제작하여 측정하였다. 이를 기반으로 하여 ETL과 HTL의 두께를 조절하여 전하 이동도가 균형을 이루는 OLED 소자를 제작하기 위해 실험을 진행하였다.

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A Study on the Retention Characteristics with the Charge Injection Conditions in the Nonvolatile MNOS Memories (전하주입조건에 따른 비휘발성 MNOS 기억소자의 기억유지특성에 관한 연구)

  • Lee, Kyoung-Leun;Yi, Sang-Bae;Lee, Sang-Eun;Seo, Kwang-Yell
    • Proceedings of the KIEE Conference
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    • 1993.07b
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    • pp.1265-1267
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    • 1993
  • The switching and the retention characteristics with the injection conditions(pulse height and pulse width) were investigated in the nonvolatile MNOS memories with thin oxide layer of $23{\AA}$ thick. The shift of flatband voltage was measured using the fast ramp C-V method and experimental results were analized using the previously developed models. It was shown that the experimental results were described quit well by the trap-assisted and modified Fowler-Nordheim tunneling models for the voltage pulse of $15V{\sim}19V,\;24V{\sim}25V$, respectively. However, the direct tunneling model was agreement with experimental values in all range of pulse height. As increasing the initial shift of the flatband voltage, the decay rate was increased. But for the same initial shift of the flatband voltage, the decay rate was smaller for low and long pulse than for high and short one.

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